Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division T4F51AHM3/I

Part No.:
T4F51AHM3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-219AB
Datasheet:
AetrixT4F51AHM3/I.pdf
Description:
LOW PROFILE OF 400W PAR TVS PROD
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:19,634

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

T4F51AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in the eSMP® Series, designed for automotive-grade overvoltage protection. It features a 51 V breakdown voltage (VBR), 43.6 V stand-off voltage (VWM), 400 W peak pulse power (10/1000 µs), 70.1 V maximum clamping voltage (VC), and AEC-Q101 qualification - deployed to protect sensor signal lines and MOSFET gates in engine control units.

For engineers reviewing the T4F51AHM3/I datasheet, T4F51AHM3/I pinout, T4F51AHM3/I application, or T4F51AHM3/I equivalent, key selection criteria include its 185 °C junction temperature rating, SMF (DO-219AB) package compatibility, unidirectional polarity, low leakage (<1 µA at VWM), and thermal resistance (RthJA = 160 °C/W) under JEDEC 51-2A conditions.

Technical Context

The T4F51AHM3/I employs passivated anisotropic rectifier technology optimized for high-reliability automotive environments. Its unidirectional architecture provides precise reverse-biased clamping with minimal leakage current (≤1 µA at VWM = 43.6 V) and stable VBR temperature coefficient (αT = 0.093 %/°C).

It delivers 400 W peak pulse power per 10/1000 µs waveform while maintaining clamping at 70.1 V under 5.7 A surge current (IPPM). The device operates across –65 °C to +185 °C junction temperature range and meets MSL Level 1 reflow requirements (260 °C peak).

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/typ/max)48.5 / 51.0 / 53.6 V - ensures reliable triggering above system operating voltage with margin against tolerance drift
VWM43.6 V - maximum continuous reverse voltage before leakage exceeds 1 µA, compatible with 36–42 V automotive supply rails
VC @ IPPM70.1 V - clamping voltage during 5.7 A 10/1000 µs surge, limiting protected IC stress to safe levels
PPPM400 W - peak pulse power handling capability validated per IEC 61000-4-5 surge immunity standards
TJ max+185 °C - enables operation in under-hood automotive locations without derating penalties
RthJA160 °C/W - thermal resistance to ambient on standard FR4 PCB, informs heatsinking and layout decisions

Pinout & Package

Package: SMF (DO-219AB) - low-profile surface-mount case with matte tin-plated leads, UL 94 V-0 molding compound, and cathode indicated by color band. Compatible with wave and reflow soldering per J-STD-002 and JESD 22-B102.

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry terminal in forward bias; reference node for clamping actionConnected to protected circuit ground or low-side return path during transient suppression
CathodeCurrent exit terminal in forward bias; clamping output nodeConnected to line being protected (e.g., sensor signal or power rail); color band identifies this terminal

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive electronics per stress test requirements including HTOL, TC, and HAST
Junction temperature ratingRated up to +185 °C - supports placement near high-heat sources like powertrain ECUs without thermal derating
Low-profile SOD-123W-compatible footprintSMF (DO-219AB) package with 2.9 mm × 1.3 mm body - enables compact board layouts in space-constrained modules
Halogen-free & RoHS-compliantHM3 suffix denotes halogen-free molding compound and lead finish meeting EU RoHS Directive 2011/65/EU

Applications

Automotive Engine Control Unit (ECU)Automotive Cabin Sensor Interface

Use Scenario: Protecting 5 V and 12 V signal lines in engine control modules exposed to load dump and inductive switching transients.

IC Role / Device Role / Timing Role: Unidirectional TVS diode providing fast-response clamping of negative-going transients on microcontroller I/O and CAN transceiver inputs.

Use Value: Limits voltage excursion to ≤70.1 V during 5.7 A surges, preserving integrity of 3.3 V/5 V logic interfaces and preventing latch-up in downstream ASICs.

Use Scenario: Shielding LIN bus and analog sensor outputs (e.g., temperature, pressure) in HVAC and seat control modules.

IC Role / Device Role / Timing Role: Standoff protection element placed between sensor output and MCU ADC input, blocking reverse transients while allowing normal DC signal passage.

Use Value: Maintains <1 µA leakage at 43.6 V, ensuring minimal offset error in precision analog measurement paths under nominal conditions.

Industrial Motor Drive Feedback CircuitCommercial Vehicle Lighting Control

Use Scenario: Safeguarding encoder and Hall-effect feedback signals in 24 V motor drives subject to commutation noise and back-EMF spikes.

IC Role / Device Role / Timing Role: Transient shunt placed at signal entry point to suppress sub-microsecond EFT bursts and repetitive switching noise.

Use Value: Delivers 400 W pulse power handling with 0.093 %/°C VBR stability, enabling consistent clamping performance across wide ambient temperature swings.

Use Scenario: Overvoltage protection for LED driver control lines in 24 V commercial truck lighting systems experiencing battery reversal and jump-start surges.

IC Role / Device Role / Timing Role: Primary front-end clamp on PWM dimming and enable lines interfacing with vehicle body control module (BCM).

Use Value: Withstands 10/1000 µs surges up to 5.7 A while maintaining 185 °C operational capability - critical for under-bumper mounting locations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ51A-E3/5A (Vishay)Same VBR (48.5–53.6 V), but SMA package (DO-214AC); RthJA = 110 °C/W; lower PPPM = 400 W (same rating but different thermal profile)Higher thermal mass; less suitable for ultra-thin PCBs or tight spacing constraintsSelect when board-level thermal management allows larger footprint and higher junction-to-ambient resistance is acceptable
1.5SMC51A (ON Semiconductor)Same VBR range and PPPM, but SMC (DO-214AB) package; 1.5 kW peak pulse rating (10/1000 µs) - not applicable here; actual rating is 400 W per datasheetLarger body (7.11 mm × 6.22 mm); incompatible with DO-219AB land patternChoose only if redesign permits larger pad layout and mechanical clearance; not drop-in compatible with T4F51AHM3/I

Compared with SMAJ51A-E3/5A and 1.5SMC51A, the T4F51AHM3/I offers superior space efficiency via its 2.9 mm × 1.3 mm SMF package, tighter thermal resistance control for high-density automotive modules, and guaranteed AEC-Q101 qualification with whisker-tested terminations - making it optimal for next-generation compact ECU designs.

Availability

T4F51AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, cabin sensor interfaces, industrial motor drive feedback circuits, and commercial vehicle lighting control requiring stable component supply and long-term lifecycle support.

Supply support for T4F51AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, automotive qualification, and high-temperature operation.

The T4F51AHM3/I belongs to Vishay's eSMP® Series of PAR® TVS diodes - engineered specifically for AEC-Q101-compliant automotive electronics where space, thermal robustness, and transient immunity are critical.

FAQ

What is the breakdown voltage specification for T4F51AHM3/I?

The T4F51AHM3/I has a breakdown voltage (VBR) of 48.5 V (minimum), 51.0 V (typical), and 53.6 V (maximum) at 1.0 mA test current. This range ensures reliable activation above nominal 42 V automotive system voltages while accommodating manufacturing tolerances and temperature drift. The specified VBR is measured per ANSI/IEEE C62.35 and validated under AEC-Q101 stress conditions.

Is T4F51AHM3/I qualified for automotive applications?

Yes, the T4F51AHM3/I is AEC-Q101 qualified and rated for operation from –65 °C to +185 °C junction temperature. It meets MSL Level 1 per J-STD-020 (260 °C peak reflow), passes JESD 201 Class 2 whisker testing, and uses halogen-free, RoHS-compliant materials - all confirmed in Vishay document 87645 revision 14-Feb-2023.

What package type does T4F51AHM3/I use, and what are its key mechanical features?

The T4F51AHM3/I uses the SMF (DO-219AB) package - a low-profile surface-mount case measuring 2.9 mm × 1.3 mm with 0.85 mm height. It features matte tin-plated leads, UL 94 V-0 compliant molding compound, and cathode identification via color band. The package is fully compatible with SOD-123W footprints and supports both wave and reflow soldering.

What is the maximum clamping voltage of T4F51AHM3/I under surge conditions?

The T4F51AHM3/I exhibits a maximum clamping voltage (VC) of 70.1 V at 5.7 A peak pulse current (IPPM) using the standard 10/1000 µs waveform. This value is measured per IEC 61000-4-5 and defines the upper voltage limit imposed on protected circuitry during worst-case transient events, ensuring compatibility with 5 V and 12 V interface ICs.

Does T4F51AHM3/I have unidirectional or bidirectional polarity?

The T4F51AHM3/I is a unidirectional TVS diode, meaning it clamps only reverse-polarity transients (cathode positive relative to anode). Its polarity is marked by a color band denoting the cathode end. This configuration is optimized for DC-powered systems like automotive ECUs where transients occur primarily in one direction - unlike bidirectional variants used in AC or data-line applications.

T4F51AHM3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-219AB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
43.6V
Voltage - Breakdown (Min):
48.5V
Voltage - Clamping (Max) @ Ipp:
70.1V
Current - Peak Pulse (10/1000µs):
5.7A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-219AB (SMF)

T4F51AHM3/I FAQ

1.How can I place an order for T4F51AHM3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for T4F51AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T4F51AHM3/I reliable?

The price and inventory of T4F51AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F51AHM3/I is usually 5 days.

3.What payment methods are accepted for T4F51AHM3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F51AHM3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for T4F51AHM3/I?

T4F51AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T4F51AHM3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T4F51AHM3/I?

For technical support, including T4F51AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F51AHM3/I requirements.

6.How does Aetrix verify that T4F51AHM3/I is sourced from the original manufacturer or authorized distributors?

All T4F51AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F51AHM3/I meets industry standards.

7.What is the process for return or replacement of T4F51AHM3/I?

All T4F51AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F51AHM3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T4F51AHM3/I part is unused and in its original packaging.

Return procedure for T4F51AHM3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

T4F51AHM3/I Tags

  • T4F51AHM3/I
  • T4F51AHM3/I PDF
  • T4F51AHM3/I Datasheet
  • T4F51AHM3/I Specifications
  • T4F51AHM3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division T4F51AHM3/I
  • Buy T4F51AHM3/I
  • T4F51AHM3/I Price
  • T4F51AHM3/I Distributor
  • T4F51AHM3/I Supplier
  • T4F51AHM3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER