Vishay General Semiconductor - Diodes Division T4F51AHM3/I
- Part No.:
- T4F51AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-219AB
- Datasheet:
-
T4F51AHM3/I.pdf
- Description:
- LOW PROFILE OF 400W PAR TVS PROD
- Quantity:
- Payment:

- Shipping:

Inventory:19,634
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Product details
Overview
T4F51AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in the eSMP® Series, designed for automotive-grade overvoltage protection. It features a 51 V breakdown voltage (VBR), 43.6 V stand-off voltage (VWM), 400 W peak pulse power (10/1000 µs), 70.1 V maximum clamping voltage (VC), and AEC-Q101 qualification - deployed to protect sensor signal lines and MOSFET gates in engine control units.
For engineers reviewing the T4F51AHM3/I datasheet, T4F51AHM3/I pinout, T4F51AHM3/I application, or T4F51AHM3/I equivalent, key selection criteria include its 185 °C junction temperature rating, SMF (DO-219AB) package compatibility, unidirectional polarity, low leakage (<1 µA at VWM), and thermal resistance (RthJA = 160 °C/W) under JEDEC 51-2A conditions.
Technical Context
The T4F51AHM3/I employs passivated anisotropic rectifier technology optimized for high-reliability automotive environments. Its unidirectional architecture provides precise reverse-biased clamping with minimal leakage current (≤1 µA at VWM = 43.6 V) and stable VBR temperature coefficient (αT = 0.093 %/°C).
It delivers 400 W peak pulse power per 10/1000 µs waveform while maintaining clamping at 70.1 V under 5.7 A surge current (IPPM). The device operates across –65 °C to +185 °C junction temperature range and meets MSL Level 1 reflow requirements (260 °C peak).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 48.5 / 51.0 / 53.6 V - ensures reliable triggering above system operating voltage with margin against tolerance drift |
| VWM | 43.6 V - maximum continuous reverse voltage before leakage exceeds 1 µA, compatible with 36–42 V automotive supply rails |
| VC @ IPPM | 70.1 V - clamping voltage during 5.7 A 10/1000 µs surge, limiting protected IC stress to safe levels |
| PPPM | 400 W - peak pulse power handling capability validated per IEC 61000-4-5 surge immunity standards |
| TJ max | +185 °C - enables operation in under-hood automotive locations without derating penalties |
| RthJA | 160 °C/W - thermal resistance to ambient on standard FR4 PCB, informs heatsinking and layout decisions |
Pinout & Package
Package: SMF (DO-219AB) - low-profile surface-mount case with matte tin-plated leads, UL 94 V-0 molding compound, and cathode indicated by color band. Compatible with wave and reflow soldering per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; reference node for clamping action | Connected to protected circuit ground or low-side return path during transient suppression |
| Cathode | Current exit terminal in forward bias; clamping output node | Connected to line being protected (e.g., sensor signal or power rail); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, and HAST |
| Junction temperature rating | Rated up to +185 °C - supports placement near high-heat sources like powertrain ECUs without thermal derating |
| Low-profile SOD-123W-compatible footprint | SMF (DO-219AB) package with 2.9 mm × 1.3 mm body - enables compact board layouts in space-constrained modules |
| Halogen-free & RoHS-compliant | HM3 suffix denotes halogen-free molding compound and lead finish meeting EU RoHS Directive 2011/65/EU |
Applications
| Automotive Engine Control Unit (ECU) | Automotive Cabin Sensor Interface |
|---|---|
Use Scenario: Protecting 5 V and 12 V signal lines in engine control modules exposed to load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS diode providing fast-response clamping of negative-going transients on microcontroller I/O and CAN transceiver inputs. Use Value: Limits voltage excursion to ≤70.1 V during 5.7 A surges, preserving integrity of 3.3 V/5 V logic interfaces and preventing latch-up in downstream ASICs. | Use Scenario: Shielding LIN bus and analog sensor outputs (e.g., temperature, pressure) in HVAC and seat control modules. IC Role / Device Role / Timing Role: Standoff protection element placed between sensor output and MCU ADC input, blocking reverse transients while allowing normal DC signal passage. Use Value: Maintains <1 µA leakage at 43.6 V, ensuring minimal offset error in precision analog measurement paths under nominal conditions. |
| Industrial Motor Drive Feedback Circuit | Commercial Vehicle Lighting Control |
Use Scenario: Safeguarding encoder and Hall-effect feedback signals in 24 V motor drives subject to commutation noise and back-EMF spikes. IC Role / Device Role / Timing Role: Transient shunt placed at signal entry point to suppress sub-microsecond EFT bursts and repetitive switching noise. Use Value: Delivers 400 W pulse power handling with 0.093 %/°C VBR stability, enabling consistent clamping performance across wide ambient temperature swings. | Use Scenario: Overvoltage protection for LED driver control lines in 24 V commercial truck lighting systems experiencing battery reversal and jump-start surges. IC Role / Device Role / Timing Role: Primary front-end clamp on PWM dimming and enable lines interfacing with vehicle body control module (BCM). Use Value: Withstands 10/1000 µs surges up to 5.7 A while maintaining 185 °C operational capability - critical for under-bumper mounting locations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A-E3/5A (Vishay) | Same VBR (48.5–53.6 V), but SMA package (DO-214AC); RthJA = 110 °C/W; lower PPPM = 400 W (same rating but different thermal profile) | Higher thermal mass; less suitable for ultra-thin PCBs or tight spacing constraints | Select when board-level thermal management allows larger footprint and higher junction-to-ambient resistance is acceptable |
| 1.5SMC51A (ON Semiconductor) | Same VBR range and PPPM, but SMC (DO-214AB) package; 1.5 kW peak pulse rating (10/1000 µs) - not applicable here; actual rating is 400 W per datasheet | Larger body (7.11 mm × 6.22 mm); incompatible with DO-219AB land pattern | Choose only if redesign permits larger pad layout and mechanical clearance; not drop-in compatible with T4F51AHM3/I |
Compared with SMAJ51A-E3/5A and 1.5SMC51A, the T4F51AHM3/I offers superior space efficiency via its 2.9 mm × 1.3 mm SMF package, tighter thermal resistance control for high-density automotive modules, and guaranteed AEC-Q101 qualification with whisker-tested terminations - making it optimal for next-generation compact ECU designs.
Availability
T4F51AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, cabin sensor interfaces, industrial motor drive feedback circuits, and commercial vehicle lighting control requiring stable component supply and long-term lifecycle support.
Supply support for T4F51AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, automotive qualification, and high-temperature operation.
The T4F51AHM3/I belongs to Vishay's eSMP® Series of PAR® TVS diodes - engineered specifically for AEC-Q101-compliant automotive electronics where space, thermal robustness, and transient immunity are critical.
FAQ
What is the breakdown voltage specification for T4F51AHM3/I?
The T4F51AHM3/I has a breakdown voltage (VBR) of 48.5 V (minimum), 51.0 V (typical), and 53.6 V (maximum) at 1.0 mA test current. This range ensures reliable activation above nominal 42 V automotive system voltages while accommodating manufacturing tolerances and temperature drift. The specified VBR is measured per ANSI/IEEE C62.35 and validated under AEC-Q101 stress conditions.
Is T4F51AHM3/I qualified for automotive applications?
Yes, the T4F51AHM3/I is AEC-Q101 qualified and rated for operation from –65 °C to +185 °C junction temperature. It meets MSL Level 1 per J-STD-020 (260 °C peak reflow), passes JESD 201 Class 2 whisker testing, and uses halogen-free, RoHS-compliant materials - all confirmed in Vishay document 87645 revision 14-Feb-2023.
What package type does T4F51AHM3/I use, and what are its key mechanical features?
The T4F51AHM3/I uses the SMF (DO-219AB) package - a low-profile surface-mount case measuring 2.9 mm × 1.3 mm with 0.85 mm height. It features matte tin-plated leads, UL 94 V-0 compliant molding compound, and cathode identification via color band. The package is fully compatible with SOD-123W footprints and supports both wave and reflow soldering.
What is the maximum clamping voltage of T4F51AHM3/I under surge conditions?
The T4F51AHM3/I exhibits a maximum clamping voltage (VC) of 70.1 V at 5.7 A peak pulse current (IPPM) using the standard 10/1000 µs waveform. This value is measured per IEC 61000-4-5 and defines the upper voltage limit imposed on protected circuitry during worst-case transient events, ensuring compatibility with 5 V and 12 V interface ICs.
Does T4F51AHM3/I have unidirectional or bidirectional polarity?
The T4F51AHM3/I is a unidirectional TVS diode, meaning it clamps only reverse-polarity transients (cathode positive relative to anode). Its polarity is marked by a color band denoting the cathode end. This configuration is optimized for DC-powered systems like automotive ECUs where transients occur primarily in one direction - unlike bidirectional variants used in AC or data-line applications.
T4F51AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-219AB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 5.7A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-219AB (SMF)
T4F51AHM3/I FAQ
1.How can I place an order for T4F51AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T4F51AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T4F51AHM3/I reliable?
The price and inventory of T4F51AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T4F51AHM3/I is usually 5 days.
3.What payment methods are accepted for T4F51AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T4F51AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T4F51AHM3/I?
T4F51AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T4F51AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T4F51AHM3/I?
For technical support, including T4F51AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T4F51AHM3/I requirements.
6.How does Aetrix verify that T4F51AHM3/I is sourced from the original manufacturer or authorized distributors?
All T4F51AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T4F51AHM3/I meets industry standards.
7.What is the process for return or replacement of T4F51AHM3/I?
All T4F51AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T4F51AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T4F51AHM3/I part is unused and in its original packaging.
Return procedure for T4F51AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T4F51AHM3/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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