Vishay General Semiconductor - Diodes Division T6N12AHM3/I
- Part No.:
- T6N12AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- 2-VDFN
- Datasheet:
-
T6N12AHM3/I.pdf
- Description:
- LOW-PROFILE VERSION 600 W UNI-DI
- Quantity:
- Payment:

- Shipping:

Inventory:13,950
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Product details
Overview
T6N12AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, featuring 12 V nominal breakdown voltage (VBR = 11.4–12.6 V), 10.2 V stand-off voltage (VWM), and 600 W peak pulse power (10/1000 µs). It delivers clamping voltage of 16.7 V at 35.9 A peak pulse current and operates up to 185 °C junction temperature - designed for automotive-grade ESD and surge protection on sensor signal lines and MOSFET gate drivers.
For engineers reviewing the T6N12AHM3/I datasheet, T6N12AHM3/I pinout, T6N12AHM3/I application, or T6N12AHM3/I equivalent, this page provides verified package dimensions, AEC-Q101 qualification status, thermal resistance (RθJA = 175 °C/W), IEC 61000-4-2 ±30 kV ESD immunity, and side-wettable flank compatibility with automated optical inspection (AOI) and reflow processes.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-reliability automotive environments, with junction passivation enabling stable operation at TJ = 185 °C. Its unidirectional configuration supports DC-biased signal line protection where reverse conduction must be blocked during normal operation.
The DFN3820A package provides low thermal resistance to mount (RθJM = 6.5 °C/W) and integrates a heatsink-anode structure with cathode marked by color band. It meets MSL Level 1 per J-STD-020 and passes JESD201 Class 2 whisker testing - critical for long-term solder joint integrity in under-hood applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 11.4 / 12.0 / 12.6 V - ensures reliable triggering above 10.2 V operating voltage while avoiding false clamping during transients |
| VWM | 10.2 V - maximum continuous reverse voltage before leakage exceeds 2 µA, compatible with 12 V automotive supply rails |
| VC @ IPPM | 16.7 V - clamping voltage at 35.9 A limits protected IC stress to safe levels during ISO 7637-2 pulse 1/2a/5a events |
| PPPM | 600 W (10/1000 µs) - sustains high-energy surges common in load-dump and inductive switching scenarios |
| TJ max | +185 °C - enables placement near heat sources (e.g., powertrain ECUs) without derating or thermal shutdown |
| ESD immunity | ±30 kV contact/air (IEC 61000-4-2) - protects against human-body-model and system-level electrostatic discharge events |
| Package | DFN3820A (3.95 × 2.18 × 0.88 mm) - low-profile, side-wettable flanks support AOI and high-yield SMT assembly |
Pinout & Package
DFN3820A package: 2-terminal, leadless, thermally enhanced layout with anode connected to exposed metal pad (heatsink), cathode marked by color band on top surface. Dimensions: 3.95 mm × 2.18 mm × 0.88 mm (L × W × H), 0.70 mm pitch between terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (exposed pad) | Heatsink connection and current return path | Provides low RθJM (6.5 °C/W) and mechanical anchoring; must be soldered to large copper area for thermal performance |
| Cathode (top-side marked terminal) | Transient current sink and clamping node | Connected to protected signal line; polarity marking prevents reverse installation during automated placement |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, UHAST, and ESD - eliminates qualification overhead for Tier 1 suppliers |
| Side-wettable flanks | Enables 100% automated optical inspection (AOI) of solder fillet quality without X-ray, reducing post-reflow defect escape rate |
| Halogen-free & RoHS-compliant | Meets automotive environmental compliance mandates (e.g., ELV, IMDS) and supports lead-free reflow profiles up to 260 °C peak |
| Junction passivation | Prevents moisture-induced degradation and leakage drift over 15+ year field life in humid under-hood environments |
| MSL Level 1 rating | Zero floor-life limitation - parts can be stored indefinitely at ≤30 °C/60% RH without baking prior to reflow |
Applications
| Automotive Sensor Protection | Powertrain Control Module Input Protection |
|---|---|
Use Scenario: Protecting LIN/CAN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load-dump and jump-start transients in engine bay modules. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground to clamp positive-going surges while blocking reverse leakage during normal operation. Use Value: Limits clamped voltage to 16.7 V at 35.9 A, ensuring downstream ASICs remain within absolute maximum ratings during ISO 7637-2 Pulse 5a (100 V/100 ms). |
Use Scenario: Safeguarding microcontroller GPIOs and ADC inputs in transmission control units exposed to relay coil flyback and alternator ripple. IC Role / Device Role / Timing Role: Fast-response transient suppressor with <1 ns response time, placed directly at connector entry point before filtering networks. Use Value: Withstands 600 W peak pulse energy and operates up to +185 °C ambient, eliminating thermal derating in sealed, high-temp enclosures. |
| ADAS Camera Power Line Protection | Electric Power Steering (EPS) Motor Driver Protection |
Use Scenario: Shielding 12 V camera module power inputs from battery line transients during cold-crank and load-dump events in front-end ADAS systems. IC Role / Device Role / Timing Role: Standoff-rated TVS (VWM = 10.2 V) placed upstream of DC/DC converter input to prevent overvoltage damage during cranking dips and spikes. Use Value: Maintains <2 µA leakage at 10.2 V, minimizing quiescent current impact on always-on camera subsystems. |
Use Scenario: Protecting half-bridge gate drivers and current-sense amplifiers in EPS motor control boards subjected to PWM-induced ringing and inductive kickback. IC Role / Device Role / Timing Role: Low-capacitance (<50 pF) unidirectional suppressor shunting high-frequency spikes (>100 MHz) generated by fast-switching SiC MOSFETs. Use Value: Achieves 16.7 V clamping at 35.9 A with minimal overshoot, preserving gate drive timing margins and preventing false turn-on. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A-E3/57T | DO-214AC (SMA) package, 12.2 V VBR, 19.9 V VC @ 30.1 A, RθJA ≈ 50 °C/W higher, not AEC-Q101 qualified | Higher clamping voltage increases risk of downstream IC damage in tight-margin designs; lacks automotive qualification and side-wettable flanks | Select only for non-automotive industrial use where board space allows SMA footprint and qualification is not required. |
| TPSMF12A | DFN2510-10 (2.5 × 1.0 mm) package, same VBR/VC, but lower PPPM = 400 W and TJ max = 175 °C; AEC-Q101 qualified | Reduced surge handling capability limits suitability for high-energy load-dump scenarios; smaller size may compromise thermal dissipation in high-power zones | Consider when PCB area is constrained and surge energy remains below 400 W; verify thermal margin with actual board layout. |
Compared with SMAJ12A-E3/57T and TPSMF12A, the T6N12AHM3/I offers superior thermal robustness (185 °C), lower clamping voltage (16.7 V), and AOI-compatible packaging - making it the preferred choice for AEC-Q101-compliant automotive signal and power line protection where reliability and manufacturability are critical.
Availability
T6N12AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, powertrain control module input protection, and ADAS camera power line protection requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for T6N12AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and TVS devices for automotive, industrial, and computing markets.
The T6N12AHM3/I belongs to Vishay's PAR® (Precision Avalanche Rectifier) TVS family, engineered specifically for AEC-Q101-compliant transient suppression in harsh automotive environments - emphasizing thermal stability, low clamping, and process-compatible packaging.
FAQ
What is the breakdown voltage tolerance of the T6N12AHM3/I?
The T6N12AHM3/I has a breakdown voltage (VBR) range of 11.4 V (min) to 12.6 V (max) at 1.0 mA test current, corresponding to ±5 % tolerance around the nominal 12.0 V value. This tight tolerance ensures predictable clamping behavior across production lots and temperature extremes, critical for protecting sensitive automotive ASICs without overdesigning downstream filtering.
Is the T6N12AHM3/I suitable for use in under-hood automotive applications?
Yes, the T6N12AHM3/I is explicitly qualified to AEC-Q101 and rated for junction temperatures up to +185 °C, making it suitable for under-hood applications such as engine control units, transmission modules, and ADAS sensors. Its DFN3820A package features halogen-free, RoHS-compliant materials and passes JESD201 Class 2 whisker testing - all validated for long-term reliability in high-temperature, high-humidity environments.
Does the T6N12AHM3/I have side-wettable flanks for AOI compatibility?
Yes, the T6N12AHM3/I uses the DFN3820A package with side-wettable flanks, enabling full automated optical inspection (AOI) of solder fillets without requiring X-ray. This feature supports high-yield SMT assembly in automotive manufacturing lines and reduces post-reflow defect escapes - a key requirement for zero-defect production targets.
What is the peak pulse current rating of the T6N12AHM3/I at 10/1000 µs waveform?
The T6N12AHM3/I supports a peak pulse current (IPPM) of 35.9 A under the standard 10/1000 µs double-exponential waveform. This value is derived from its 600 W peak pulse power rating and 16.7 V clamping voltage (VC), and is validated per Figure 3 in Vishay document 98432 - confirming robustness against ISO 7637-2 Pulse 1 and Pulse 5a transients.
How does the thermal resistance of the T6N12AHM3/I compare between junction-to-ambient and junction-to-mount?
The T6N12AHM3/I has a typical junction-to-mount thermal resistance (RθJM) of 5 °C/W and a maximum junction-to-ambient value (RθJA) of 175 °C/W per JEDEC 51-14 and 51-2A standards. The low RθJM confirms efficient heat transfer to the PCB copper pour, while the higher RθJA reflects dependence on board layout - underscoring the need for adequate thermal pad area to achieve rated 185 °C operation.
T6N12AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- 2-VDFN
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10.2V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.7V
- Current - Peak Pulse (10/1000µs):
- 35.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN3820A
T6N12AHM3/I FAQ
1.How can I place an order for T6N12AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T6N12AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T6N12AHM3/I reliable?
The price and inventory of T6N12AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N12AHM3/I is usually 5 days.
3.What payment methods are accepted for T6N12AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N12AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T6N12AHM3/I?
T6N12AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T6N12AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T6N12AHM3/I?
For technical support, including T6N12AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N12AHM3/I requirements.
6.How does Aetrix verify that T6N12AHM3/I is sourced from the original manufacturer or authorized distributors?
All T6N12AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N12AHM3/I meets industry standards.
7.What is the process for return or replacement of T6N12AHM3/I?
All T6N12AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T6N12AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T6N12AHM3/I part is unused and in its original packaging.
Return procedure for T6N12AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T6N12AHM3/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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