Vishay T6N13AHM3/H
- Part No.:
- T6N13AHM3/H
- Manufacturer:
- Vishay
- Category:
- TVS Diodes
- Package:
- 2-VDFN
- Datasheet:
-
T6N13AHM3/H.pdf
- Description:
- 600W,13V 5%, DFN3820A PAR
- Quantity:
- Payment:

- Shipping:

Inventory:8,475
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
T6N13AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, featuring 13.0 V nominal breakdown voltage (VBR), 11.1 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive-grade reliability. It protects MOSFETs and sensor signal lines against inductive switching transients and lightning surges in engine control units and ADAS modules.
For engineers reviewing the T6N13AHM3/H datasheet, T6N13AHM3/H pinout, T6N13AHM3/H application, or T6N13AHM3/H equivalent, key selection criteria include clamping voltage (18.2 V at IPPM), junction temperature rating up to +185 °C, unidirectional polarity, low-profile DFN3820A footprint with side-wettable flanks, and compatibility with automated optical inspection (AOI) and high-reliability automotive PCB assembly.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology optimized for high-temperature stability and robust transient suppression. Its unidirectional configuration enables precise clamping on positive-going transients while maintaining low leakage (<2.0 μA at VWM) across operating temperatures.
The DFN3820A package delivers thermal resistance of RθJM = 5 °C/W (typ.) to the PCB mount, supporting sustained operation under automotive thermal cycling. It meets IEC 61000-4-2 ±30 kV contact/air ESD immunity and MSL Level 1 reflow compatibility (260 °C peak).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 13.0 V - Ensures reliable triggering above system operating voltage (e.g., 12 V automotive rails) without false conduction. |
| VWM | 11.1 V - Maximum continuous reverse voltage before leakage exceeds 2.0 μA; compatible with 12 V nominal systems. |
| VC @ IPPM | 18.2 V - Clamping voltage limits downstream IC stress during 33.0 A surge (10/1000 μs), critical for MOSFET gate protection. |
| PPPM | 600 W - Sustains high-energy transients common in automotive load-dump and inductive kick scenarios. |
| TJ max | +185 °C - Enables deployment in under-hood ECUs and powertrain modules where ambient temperatures exceed 125 °C. |
| ESD Rating | ±30 kV (IEC 61000-4-2) - Provides robust electrostatic discharge immunity for sensor interface circuits. |
| Package | DFN3820A - 3.95 mm × 2.18 mm × 0.88 mm low-profile leadless package with side-wettable flanks for AOI-compatible solder joint inspection. |
Pinout & Package
DFN3820A package: 2-terminal, single unidirectional TVS configuration. Cathode marked by color band; anode connected to exposed thermal pad (heatsink). Dimensions: 3.95 mm × 2.18 mm × 0.88 mm (L × W × H); side-wettable flanks support automated optical inspection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Pad) | Common cathode return path / thermal interface | Exposed copper pad serves as primary heat sink and electrical connection to ground plane; requires full-solder coverage for thermal and current handling. |
| Cathode (Top-side terminal) | Transient voltage clamp output | Connected to protected line (e.g., sensor signal or MOSFET gate); conducts surge current to anode when VIN > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile DFN3820A | 0.88 mm height enables use in space-constrained automotive modules where Z-height is limited by connector or housing clearance. |
| AEC-Q101 qualification | Validated for automotive applications including engine management, transmission control, and ADAS sensor interfaces per stress test requirements. |
| Side-wettable flanks | Enables automated optical inspection (AOI) of solder fillet integrity without X-ray, reducing post-reflow defect escape in high-volume production. |
| Junction passivation | Optimized anisotropic rectifier design ensures stable VBR drift <0.072 %/°C and low leakage over lifetime under thermal cycling. |
| Halogen-free & RoHS | HM3 suffix confirms compliance with automotive environmental standards and end-of-life material restrictions (per Vishay doc. 99912). |
Applications
| Engine Control Unit (ECU) Power Input Protection | ADAS Camera Sensor Signal Line Protection |
|---|---|
Use Scenario: Protects 12 V supply rail in engine control units against ISO 7637-2 load dump transients (up to 60 V, 100 ms) and alternator ripple. IC Role / Device Role: Unidirectional TVS placed between battery input and DC/DC converter input stage. Use Value: Clamps surge to ≤18.2 V, preventing overvoltage damage to downstream PMICs and microcontrollers while maintaining <2.0 μA leakage at 11.1 V. | Use Scenario: Shields LVDS or analog video signal lines from ESD events and cable-induced transients in forward-facing camera modules. IC Role / Device Role: Point-of-entry TVS on differential pair traces before serializer IC input. Use Value: 30 kV IEC 61000-4-2 ESD immunity and 18.2 V clamping preserve signal integrity and prevent latch-up in image sensor interface circuitry. |
| Electric Power Steering (EPS) Motor Driver Gate Protection | Body Control Module (BCM) LIN Bus Line Protection |
Use Scenario: Guards high-side/low-side MOSFET gates in EPS motor drivers against inductive kickback during PWM switching. IC Role / Device Role: TVS placed between gate driver output and MOSFET gate, referenced to source. Use Value: Fast response and 18.2 V clamping limit gate oxide stress below 20 V, extending MOSFET lifetime under repeated transient exposure. | Use Scenario: Protects LIN bus transceiver pins from battery disconnect spikes and ESD in door module and lighting control nodes. IC Role / Device Role: Unidirectional TVS on LIN data line (dominant/recessive side), grounded via low-inductance path. Use Value: 11.1 V VWM ensures no interference with LIN's 12 V nominal signaling; 18.2 V clamping prevents transceiver latch-up during 24 V battery transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ13A-HF | DO-214AC (SMA) package; higher RθJA (190 °C/W); VC = 21.5 V at same IPPM | Less suitable for high-density automotive PCBs due to larger footprint and no side-wettable flanks. | Prefer T6N13AHM3/H for space-constrained, AOI-driven automotive designs requiring lower clamping and better thermal coupling. |
| SMF13A | SOD-123FL package; VBR = 13.3–14.7 V; PPPM = 200 W; not AEC-Q101 qualified. | Limited to consumer or industrial applications; insufficient for automotive under-hood thermal or reliability requirements. | Select T6N13AHM3/H when AEC-Q101 qualification, +185 °C operation, or 600 W surge capability is mandatory. |
Compared with SMAJ13A-HF and SMF13A, the T6N13AHM3/H provides superior thermal performance (RθJM = 5 °C/W), tighter VBR tolerance (±5 %), and automotive-grade process validation-enabling smaller PCB area, higher reliability in thermal cycling, and guaranteed conformance to vehicle OEM stress-test protocols.
Availability
T6N13AHM3/H is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera modules, electric power steering systems, and body control modules requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for T6N13AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.
The T6N13AHM3/H belongs to Vishay's PAR® (Precision Avalanche Rectifier) TVS family, engineered specifically for high-temperature, high-surge automotive environments where compact size, AEC-Q101 compliance, and consistent clamping performance are critical.
FAQ
What is the breakdown voltage tolerance for T6N13AHM3/H?
The T6N13AHM3/H has a breakdown voltage tolerance of ±5 %, with a nominal VBR of 13.0 V (min 12.4 V, max 13.7 V at 1.0 mA test current). This tight tolerance ensures predictable clamping behavior in automotive 12 V systems where overvoltage margin must be precisely controlled to protect sensitive downstream ICs without premature conduction.
Is T6N13AHM3/H suitable for under-hood automotive applications?
Yes, the T6N13AHM3/H is explicitly qualified to AEC-Q101 and rated for junction temperatures up to +185 °C, making it suitable for under-hood applications such as engine control units and transmission control modules. Its DFN3820A package provides low thermal resistance (RθJM = 5 °C/W typ.), and its passivated anisotropic rectifier structure ensures stable performance across extended thermal cycling profiles defined in automotive qualification standards.
Does T6N13AHM3/H support automated optical inspection (AOI)?
Yes, the T6N13AHM3/H uses a DFN3820A package with side-wettable flanks, enabling reliable solder joint inspection using standard AOI systems without requiring X-ray. This feature is confirmed in the Vishay datasheet (doc. 98432, revision 10-Nov-2023) and supports high-yield, zero-defect manufacturing for automotive electronics production lines.
What is the maximum clamping voltage of T6N13AHM3/H at rated surge current?
The maximum clamping voltage (VC) of T6N13AHM3/H is 18.2 V at its rated peak pulse current (IPPM) of 33.0 A under a 10/1000 μs waveform. This value is measured per Figure 1 in the official Vishay datasheet and defines the upper voltage limit imposed on protected circuitry during worst-case surge events, directly impacting MOSFET gate oxide safety and IC input stage survivability.
How does the HM3 suffix affect the T6N13AHM3/H specification?
The HM3 suffix on T6N13AHM3/H indicates halogen-free, RoHS-compliant construction with matte tin-plated terminals that meet JESD 201 Class 2 whisker resistance and J-STD-002/JESD 22-B102 solderability requirements. It also confirms AEC-Q101 qualification-distinguishing it from non-HM3 variants and ensuring compliance with automotive environmental and reliability mandates.
T6N13AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay
- Package/Case:
- 2-VDFN
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11.1V
- Voltage - Breakdown (Min):
- 12.4V
- Voltage - Clamping (Max) @ Ipp:
- 18.2V
- Current - Peak Pulse (10/1000µs):
- 33A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN3820A
T6N13AHM3/H FAQ
1.How can I place an order for T6N13AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for T6N13AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T6N13AHM3/H reliable?
The price and inventory of T6N13AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N13AHM3/H is usually 5 days.
3.What payment methods are accepted for T6N13AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N13AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T6N13AHM3/H?
T6N13AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T6N13AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T6N13AHM3/H?
For technical support, including T6N13AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N13AHM3/H requirements.
6.How does Aetrix verify that T6N13AHM3/H is sourced from the original manufacturer or authorized distributors?
All T6N13AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N13AHM3/H meets industry standards.
7.What is the process for return or replacement of T6N13AHM3/H?
All T6N13AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with T6N13AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T6N13AHM3/H part is unused and in its original packaging.
Return procedure for T6N13AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T6N13AHM3/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

