Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division T6N24AHM3/I

Part No.:
T6N24AHM3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
2-VDFN
Datasheet:
AetrixT6N24AHM3/I.pdf
Description:
LOW-PROFILE VERSION 600 W UNI-DI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

T6N24AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, rated for 24 V nominal breakdown voltage (VBR = 22.8–25.2 V), 600 W peak pulse power (10/1000 μs), and 185 °C maximum junction temperature - designed for automotive-grade ESD and surge protection of sensor signal lines and MOSFET gates.

For engineers reviewing the T6N24AHM3/I datasheet, T6N24AHM3/I pinout, T6N24AHM3/I application, or T6N24AHM3/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance values, clamping performance at IPPM, and side-wettable flank compatibility with AOI inspection - all critical for high-reliability automotive PCB design and production validation.

Technical Context

This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repetitive surge stress. Its unidirectional configuration enables precise reverse-biased transient suppression on DC-biased signal or power rails without forward conduction interference.

Rated for TJ = –65 °C to +185 °C and qualified per AEC-Q101, the T6N24AHM3/I supports automotive under-hood applications where thermal derating above 25 °C must be calculated using its 0.085 %/°C VBR temperature coefficient - validated across the full operating range per JEDEC 51-2A and 51-14 test methods.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/typ/max) 22.8 / 24.0 / 25.2 V - ensures reliable turn-on before downstream IC damage at 24 V nominal rail
VWM 20.5 V - maximum continuous reverse standoff voltage compatible with 24 V systems
IPPM (10/1000 μs) 18.1 A - peak surge current capability enabling IEC 61000-4-5 Level 4 compliance
VC @ IPPM 33.2 V - clamping voltage limits transient overshoot to safe margin below 36 V-rated components
RθJA / RθJM 140–175 / 5–6.5 °C/W - low junction-to-mount thermal resistance enables direct PCB copper pour heatsinking
ESD immunity ±30 kV contact & air discharge (IEC 61000-4-2) - eliminates need for secondary ESD stages in sensor interfaces
MSL level Level 1 (260 °C peak reflow) - supports standard lead-free SMT assembly without moisture sensitivity concerns

Pinout & Package

Package: DFN3820A - 2-terminal, leadless, side-wettable flank package (3.95 mm × 2.18 mm × 0.88 mm), halogen-free, RoHS-compliant, AEC-Q101 qualified. Cathode marked by color band; anode connected to exposed thermal pad.

Pin/Terminal Circuit Role Design Meaning
Anode (thermal pad) Common cathode return path & primary heat dissipation node Must be soldered to ≥100 mm² internal or external copper pour for RθJM ≤6.5 °C/W performance
Cathode (top-side terminal) Transient current sink during overvoltage events Connected to protected line (e.g., CAN_H, LIN, sensor output); polarity-sensitive placement required

Key Features

Feature Design Value
Side-wettable flanks Enables automated optical inspection (AOI) of solder joint quality on both sidewalls - critical for zero-defect automotive manufacturing
Junction passivation Prevents parametric drift and leakage increase after 1000+ surge cycles at 80 % of rated IPPM
TJ = 185 °C rating Supports operation in engine control units (ECUs) and ADAS modules without thermal derating up to +150 °C ambient
Unidirectional clamping Eliminates forward conduction during normal 24 V rail operation while maintaining fast <1 ns response to transients
DFN3820A footprint Direct drop-in replacement for SMP (DO-220AA) packages - no PCB redesign needed when upgrading from legacy TVS

Applications

Automotive Sensor Protection CAN Bus Line Protection

Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine bay modules subject to load dump and ISO 7637-2 pulses.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and microcontroller ADC input to clamp transients before signal conditioning stage.

Use Value: Clamps 33.2 V at 18.1 A surge, preserving 12-bit ADC accuracy and preventing latch-up in 3.3 V or 5 V interface ICs.

Use Scenario: Safeguarding CAN_H and CAN_L differential pair against ESD and coupled surges in body control modules and gateway ECUs.

IC Role / Device Role / Timing Role: One T6N24AHM3/I per line (CAN_H to GND, CAN_L to GND) providing bidirectional protection via two unidirectional devices.

Use Value: 30 kV ESD immunity and 600 W surge rating maintain CAN FD bit timing integrity (<1 ns jitter impact) during transient events.

12 V/24 V Power Rail Clamp MOSFET Gate Protection

Use Scenario: Secondary overvoltage clamp on 24 V supply rails feeding infotainment head units and ADAS camera modules.

IC Role / Device Role / Timing Role: Parallel-mounted TVS across input capacitor to suppress load dump spikes exceeding 40 V without triggering upstream OVP ICs.

Use Value: 20.5 V VWM allows stable operation during cold-crank (6.5 V) and load dump (up to 35 V), with 33.2 V clamping limiting rail excursion.

Use Scenario: Gate-source protection of N-channel high-side switches driving solenoids and relays in transmission control units.

IC Role / Device Role / Timing Role: Connected between gate and source to absorb Miller-induced voltage spikes during fast switching transitions.

Use Value: Low 0.88 mm profile fits tight gate-drive layout; 185 °C rating matches MOSFET junction temperature limits during sustained PWM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS protection applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ24A-E3/57T DO-214AC package; 24 V VBR; 400 W PPPM; RθJA = 50 °C/W higher; not AEC-Q101 qualified Larger footprint (4.5 × 2.7 mm); unsuitable for AOI; limited to industrial-grade automotive interiors Select when cost priority outweighs space constraints and AEC-Q101 compliance is not required
SMCJ24AHE3/57T DO-214AB package; same 24 V VBR; 1500 W PPPM; 2.4 mm height; MSL level 1 but no side-wettable flanks Higher surge capacity but incompatible with AOI; requires manual solder joint inspection Choose only if system-level surge testing exceeds 600 W and board area permits larger package

Compared with SMAJ24A-E3/57T and SMCJ24AHE3/57T, the T6N24AHM3/I delivers superior manufacturability (AOI-compatible), tighter thermal management (RθJM ≤6.5 °C/W), and certified automotive qualification - making it the preferred choice for safety-critical under-hood electronics where reliability and process control are non-negotiable.

Availability

T6N24AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, CAN bus line safeguarding, and 24 V power rail clamping requiring stable component supply, AEC-Q101 traceability, and consistent DFN3820A packaging across production lots.

Supply support for T6N24AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and TVS devices for automotive, industrial, and computing markets.

The T6N24AHM3/I belongs to Vishay's PAR® TVS family - engineered specifically for AEC-Q101-compliant transient suppression in harsh-temperature automotive environments, with emphasis on AOI-ready packaging and junction stability up to 185 °C.

FAQ

What is the exact breakdown voltage tolerance for T6N24AHM3/I?

The T6N24AHM3/I has a ±5 % breakdown voltage tolerance, confirmed by its "A" suffix in the part number. At 25 °C, its VBR is specified as 22.8 V (min), 24.0 V (nom), and 25.2 V (max) at 1.0 mA test current - ensuring predictable turn-on behavior across production lots and temperature ranges.

Is T6N24AHM3/I qualified for automotive use per AEC-Q101?

Yes, the T6N24AHM3/I is fully AEC-Q101 qualified, as indicated by the "H" in its ordering code and explicitly stated in Vishay document 98432. It meets stress test requirements including HTGB, AC/DC life test, and temperature cycling - with qualification data traceable to Vishay's certified automotive test labs.

Does T6N24AHM3/I support automatic optical inspection (AOI)?

Yes, the T6N24AHM3/I uses a DFN3820A package with side-wettable flanks, enabling full-spectrum AOI of solder fillets on both lateral edges. This feature is documented in Vishay's mechanical drawings and verified per J-STD-020 MSL level 1 reflow compatibility - essential for zero-defect automotive SMT lines.

What is the maximum clamping voltage of T6N24AHM3/I at rated surge current?

The T6N24AHM3/I clamps to 33.2 V at its rated peak pulse current of 18.1 A (10/1000 μs waveform), as specified in the Electrical Characteristics table of Vishay document 98432. This value is measured at TA = 25 °C and remains stable up to TJ = 150 °C per derating curves in Figure 2.

Can T6N24AHM3/I replace DO-220AA (SMP) package TVS diodes without PCB changes?

Yes, the T6N24AHM3/I is mechanically compatible with the SMP (DO-220AA) outline per Vishay's documentation, sharing identical pad layout dimensions and thermal pad geometry. Its DFN3820A footprint allows direct substitution in existing designs - provided solder paste volume and reflow profile are adjusted for leadless package requirements.

T6N24AHM3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
2-VDFN
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
20.5V
Voltage - Breakdown (Min):
22.8V
Voltage - Clamping (Max) @ Ipp:
33.2V
Current - Peak Pulse (10/1000µs):
18.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
DFN3820A

T6N24AHM3/I FAQ

1.How can I place an order for T6N24AHM3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for T6N24AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T6N24AHM3/I reliable?

The price and inventory of T6N24AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N24AHM3/I is usually 5 days.

3.What payment methods are accepted for T6N24AHM3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N24AHM3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for T6N24AHM3/I?

T6N24AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T6N24AHM3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T6N24AHM3/I?

For technical support, including T6N24AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N24AHM3/I requirements.

6.How does Aetrix verify that T6N24AHM3/I is sourced from the original manufacturer or authorized distributors?

All T6N24AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N24AHM3/I meets industry standards.

7.What is the process for return or replacement of T6N24AHM3/I?

All T6N24AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T6N24AHM3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T6N24AHM3/I part is unused and in its original packaging.

Return procedure for T6N24AHM3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

T6N24AHM3/I Tags

  • T6N24AHM3/I
  • T6N24AHM3/I PDF
  • T6N24AHM3/I Datasheet
  • T6N24AHM3/I Specifications
  • T6N24AHM3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division T6N24AHM3/I
  • Buy T6N24AHM3/I
  • T6N24AHM3/I Price
  • T6N24AHM3/I Distributor
  • T6N24AHM3/I Supplier
  • T6N24AHM3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER