Vishay General Semiconductor - Diodes Division T6N30AHM3/I
- Part No.:
- T6N30AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- 2-VDFN
- Datasheet:
-
T6N30AHM3/I.pdf
- Description:
- LOW-PROFILE VERSION 600 W UNI-DI
- Quantity:
- Payment:

- Shipping:

Inventory:14,000
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Product details
Overview
T6N30AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, rated for 30 V nominal breakdown voltage (VBR), 25.6 V stand-off voltage (VWM), and 600 W peak pulse power (10/1000 μs). It delivers 14.5 A peak pulse current and clamps to 41.4 V at IPPM, with AEC-Q101 qualification and 185 °C junction temperature capability for automotive sensor line protection.
For engineers reviewing the T6N30AHM3/I datasheet, T6N30AHM3/I pinout, T6N30AHM3/I application, or T6N30AHM3/I equivalent, this device is selected for high-reliability transient suppression in space-constrained automotive ECUs where low-profile side-wettable flanks enable AOI-compatible assembly and TJ = 185 °C operation ensures robustness under under-hood thermal stress.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology optimized for low-leakage, stable clamping across temperature. Its unidirectional configuration supports DC-biased signal and power rail protection, with VBR temperature coefficient of +0.088 %/°C enabling predictable voltage shift over -65 °C to +185 °C operating range.
The DFN3820A package provides low thermal resistance (RθJM = 5 °C/W typical) and meets MSL Level 1 (260 °C peak reflow), while its side-wettable flanks support automated optical inspection-critical for zero-defect automotive manufacturing flow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 30.0 V - Stable breakdown threshold at 1 mA test current; defines minimum clamping onset voltage under transient stress. |
| VWM | 25.6 V - Maximum continuous reverse working voltage; ensures no conduction during normal system operation. |
| PPPM (10/1000 μs) | 600 W - Sustains high-energy transients (e.g., ISO 7637-2 Pulse 1/2a) without failure in automotive load-dump scenarios. |
| IPPM | 14.5 A - Peak surge current handling capacity; determines survivability against lightning-induced or inductive-switching spikes. |
| VC at IPPM | 41.4 V - Clamped voltage during max surge; limits downstream IC/MOSFET stress below safe operating thresholds. |
| TJ max | +185 °C - Enables placement near heat sources (e.g., power stages) in engine control modules without derating. |
| ESD immunity | ±30 kV (contact/air) per IEC 61000-4-2 - Protects sensor interfaces from human-body-model ESD events in assembly and field use. |
Pinout & Package
Package: DFN3820A - 2-terminal, leadless, halogen-free, RoHS-compliant surface-mount package with side-wettable flanks (0.88 mm height, 3.95 mm × 2.18 mm footprint); anode connected to exposed thermal pad, cathode marked by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (thermal pad) | Common reference and heat sink node | Electrically tied to PCB ground plane; primary thermal path to board; must be soldered to ≥20 mm² copper pour for RθJM ≤ 6.5 °C/W. |
| Cathode (marked side) | Transient current return path | Connected to protected line (e.g., CAN_H, LIN, sensor supply); conducts surge current to ground when V > VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including HTOL, TC, HAST, and ESD stress-enables direct use in ASIL-B systems without additional qualification. |
| Side-wettable flanks | Enables 100 % automated optical inspection of solder joint integrity on both terminals-eliminates X-ray requirement in Tier-1 production lines. |
| Junction passivation | Reduces IR leakage to ≤1.0 μA at VWM and ≤6.0 μA at TJ = 150 °C-preserves signal integrity on low-power sensor analog inputs. |
| Low-profile height (0.88 mm) | Permits integration beneath connectors or in stacked PCB assemblies where Z-height is constrained to <1.0 mm. |
Applications
| Automotive Sensor Protection | CAN Bus Line Protection |
|---|---|
Use Scenario: Protecting analog output sensors (e.g., pressure, temperature) in engine control units from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor VDD and chassis ground to clamp overvoltage before it reaches ASIC input pins. Use Value: Maintains VWM = 25.6 V margin above 12 V nominal supply while clamping to 41.4 V-prevents latch-up or gate oxide damage in 3.3 V/5 V sensor interface ICs. | Use Scenario: Safeguarding high-speed CAN FD transceivers (e.g., TJA1044) against ESD and coupled surges on differential bus lines. IC Role / Device Role / Timing Role: Paired unidirectional TVS devices (one per line) referenced to common ground, absorbing common-mode transients without distorting signal edges. Use Value: 41.4 V clamping voltage stays well below CAN transceiver absolute maximum ratings (typically ±40 V common-mode), preserving signal integrity up to 5 Mbps. |
| Power Rail Surge Suppression | Infotainment Display Interface Protection |
Use Scenario: Shielding 5 V/3.3 V power rails feeding ADAS camera modules from ISO 7637-2 Pulse 5a (load dump) events. IC Role / Device Role / Timing Role: TVS placed at power entry point upstream of LDO regulators to absorb energy before it propagates into sensitive imaging SoCs. Use Value: 600 W peak pulse rating handles 12 V system load dump surges (up to 60 V, 100 ms) with minimal voltage overshoot due to fast response (<1 ns). | Use Scenario: Guarding MIPI DSI/CSI data lanes in digital instrument clusters against ESD during connector mating/unmating. IC Role / Device Role / Timing Role: Low-capacitance TVS (CJ ≈ 100 pF at 0 V) placed inline on each differential pair to shunt ESD without degrading 1.5 Gbps eye diagram. Use Value: Junction capacitance remains stable across bias (measured at 1 MHz), minimizing signal attenuation and jitter on high-speed serial links. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A | DO-214AC package (SMA), higher RθJA (≈200 °C/W), VBR = 33.3–36.8 V, IPPM = 13.9 A, VC = 48.4 V | Larger footprint (4.5 × 2.7 mm vs. 3.95 × 2.18 mm), no side-wettable flanks, not AEC-Q101 qualified | Select when cost sensitivity outweighs AOI requirements and board space permits larger package. |
| SMCJ33A-Q | DO-214AB (SMC) package, AEC-Q101 qualified, VBR = 36.7–40.6 V, IPPM = 12.3 A, VC = 53.3 V, RθJA ≈ 15 °C/W | Higher clamping voltage (53.3 V), larger size (7.1 × 6.2 mm), better thermal dissipation but incompatible with fine-pitch automated placement | Choose for higher-energy surge environments where 53.3 V clamping is acceptable and thermal management prioritizes heatsink mounting. |
Compared with SMAJ30A and SMCJ33A-Q, the T6N30AHM3/I offers superior board-level integration via DFN3820A's compact AOI-ready form factor, tighter VBR tolerance (±5 %), and lower clamping voltage (41.4 V), making it optimal for next-generation automotive electronics where space, reliability, and manufacturability are co-constrained.
Availability
T6N30AHM3/I is available at Aetrix Electronics and suitable for automotive sensor protection, CAN bus line hardening, and power rail surge suppression requiring stable component supply across extended temperature ranges and high-volume production cycles.
Supply support for T6N30AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors-including diodes, MOSFETs, and TVS devices-with emphasis on high-reliability, automotive-qualified components meeting stringent AEC-Q standards.
The T6N30AHM3/I belongs to Vishay's PAR® (Protected Anisotropic Rectifier) TVS family, engineered specifically for automotive-grade transient suppression where high-temperature stability, low-profile packaging, and process-controlled passivation are mandatory for under-hood deployment.
FAQ
What is the breakdown voltage tolerance for T6N30AHM3/I?
The T6N30AHM3/I has a breakdown voltage tolerance of ±5 %, with VBR specified from 28.5 V (min) to 31.5 V (max) at 1 mA test current. This tight tolerance ensures consistent clamping behavior across production lots and simplifies design margining for automotive safety-critical circuits where predictable overvoltage response is required.
Is T6N30AHM3/I compatible with lead-free reflow processes?
Yes, the T6N30AHM3/I is fully compatible with lead-free reflow processes, meeting J-STD-020 MSL Level 1 with a maximum peak temperature of 260 °C. Its matte tin-plated terminals and halogen-free molding compound ensure reliable solder joint formation and long-term intermetallic stability in high-volume SMT assembly lines.
How does the DFN3820A package of T6N30AHM3/I support automated optical inspection?
The DFN3820A package of T6N30AHM3/I features side-wettable flanks-exposed metal on the vertical sidewalls of the terminals-that reflect light uniformly during AOI. This enables high-confidence detection of solder fillet shape, volume, and bridging defects without requiring X-ray, reducing inspection cost and cycle time in automotive-tier production.
What is the maximum junction temperature rating for T6N30AHM3/I?
The T6N30AHM3/I is rated for a maximum junction temperature of +185 °C, validated per AEC-Q101 stress testing. This allows placement in high-temperature zones such as near power converters or within engine control modules, where ambient temperatures exceed 125 °C and thermal derating margins must be preserved.
Does T6N30AHM3/I meet IEC 61000-4-2 ESD immunity requirements?
Yes, the T6N30AHM3/I achieves ±30 kV contact discharge and ±30 kV air discharge per IEC 61000-4-2, verified in characterization. This level of ESD robustness protects downstream circuitry in automotive infotainment and body control modules during handling, assembly, and end-user interaction without requiring supplemental protection.
T6N30AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- 2-VDFN
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25.6V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.4V
- Current - Peak Pulse (10/1000µs):
- 14.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN3820A
T6N30AHM3/I FAQ
1.How can I place an order for T6N30AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T6N30AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T6N30AHM3/I reliable?
The price and inventory of T6N30AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N30AHM3/I is usually 5 days.
3.What payment methods are accepted for T6N30AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N30AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T6N30AHM3/I?
T6N30AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T6N30AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T6N30AHM3/I?
For technical support, including T6N30AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N30AHM3/I requirements.
6.How does Aetrix verify that T6N30AHM3/I is sourced from the original manufacturer or authorized distributors?
All T6N30AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N30AHM3/I meets industry standards.
7.What is the process for return or replacement of T6N30AHM3/I?
All T6N30AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T6N30AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T6N30AHM3/I part is unused and in its original packaging.
Return procedure for T6N30AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T6N30AHM3/I Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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