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Vishay General Semiconductor - Diodes Division T6N33AHM3/I
- Part No.:
- T6N33AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- 2-VDFN
- Datasheet:
-
T6N33AHM3/I.pdf
- Description:
- LOW-PROFILE VERSION 600 W UNI-DI
- Quantity:
- Payment:
- Shipping:
Inventory:13,984
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Product details
Overview
T6N33AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, featuring 33 V nominal breakdown voltage (VBR), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive-grade reliability. It protects sensitive signal lines and MOSFETs against inductive switching transients and lightning surges in engine control units and ADAS sensor interfaces.
For engineers reviewing the T6N33AHM3/I datasheet, T6N33AHM3/I pinout, T6N33AHM3/I application, or T6N33AHM3/I equivalent, this page delivers verified electrical parameters, thermal performance at TJ = 185 °C, DFN3820A mechanical dimensions, and AEC-Q101-compliant supply chain validation - all critical for automotive ECU and high-reliability embedded design.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repetitive surge stress. Its unidirectional configuration enables precise reverse-biased protection of DC-powered signal paths without forward conduction interference.
Designed for high-temperature operation up to TJ = 185 °C, it maintains clamping voltage stability across automotive under-hood environments. The DFN3820A package provides low thermal resistance (RθJM = 5 °C/W typ.) and side-wettable flanks for automated optical inspection and solder-joint reliability verification.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 31.4 / 33.0 / 34.7 V - ensures reliable triggering above system stand-off voltage while accommodating ±5% tolerance and temperature drift |
| VWM | 28.2 V - maximum continuous reverse operating voltage before leakage exceeds 1 μA, compatible with 24 V automotive bus systems |
| VC @ IPPM | 45.7 V - clamping voltage during 13.1 A 10/1000 μs surge, limiting downstream IC stress to safe levels |
| PPPM | 600 W - peak pulse power handling per standard IEC 61000-4-5 waveform, enabling robust transient suppression |
| TJ max | +185 °C - extended junction temperature rating supports placement near high-power components in engine compartments |
| ESD immunity | ±30 kV (contact/air) per IEC 61000-4-2 - protects against human-body-model electrostatic discharge during assembly and service |
Pinout & Package
Package: DFN3820A - leadless, 2-terminal surface-mount package with 3.95 mm × 2.18 mm footprint, 0.88 mm typical height, and side-wettable flanks for AOI compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive reference terminal | Connected to system ground or low-side return path; serves as heatsink per mechanical data |
| Cathode | Transient current sink | Marked by color band; connected to protected line (e.g., CAN_H, LIN, sensor output); conducts surge current to ground |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile DFN3820A | 0.88 mm height enables use in space-constrained automotive modules where height clearance < 1.0 mm is required |
| AEC-Q101 qualification | Validated for automotive applications including powertrain and chassis systems per stress test requirements |
| MSL Level 1 | Unlimited floor life at ≤30 °C/60% RH, eliminating bake requirements prior to reflow |
| Halogen-free & RoHS | M3 suffix confirms compliance with automotive environmental standards and end-of-life recycling mandates |
Applications
| Engine Control Unit (ECU) Power Input Protection | ADAS Camera Sensor Interface Protection |
|---|---|
Use Scenario: Protects 12 V/24 V power rails feeding microcontrollers and analog front-ends in engine management systems exposed to load-dump and jump-start transients. IC Role / Device Role: Unidirectional TVS placed between input rail and ground to clamp positive-going surges above VWM. Use Value: Clamps to 45.7 V at 13.1 A, preventing overvoltage damage to 36 V-rated LDOs and MCU I/Os while maintaining MSL-1 manufacturability. | Use Scenario: Shields LVDS or GMSL serial video links from ESD and cable-induced surges in surround-view camera modules mounted on vehicle exteriors. IC Role / Device Role: Single-line unidirectional suppressor on differential pair shield or common-mode line adjacent to connector. Use Value: 30 kV IEC 61000-4-2 contact discharge rating prevents latch-up in image signal processors; DFN3820A footprint minimizes parasitic inductance for fast response. |
| Body Control Module (BCM) LIN Bus Protection | Electric Power Steering (EPS) Motor Driver Gate Protection |
Use Scenario: Secures LIN transceiver pins against battery disconnect spikes and alternator ripple in door modules and seat controllers. IC Role / Device Role: Standoff voltage (28.2 V) exceeds LIN bus VCC (12 V) with margin, ensuring no leakage during normal operation. Use Value: Sub-1 μA leakage at VWM preserves bus idle-state integrity; 185 °C TJ rating supports under-dash mounting near HVAC ducts. | Use Scenario: Guards high-side and low-side gate drivers in 3-phase EPS inverter stages against Miller-induced voltage spikes during MOSFET switching. IC Role / Device Role: Placed across gate-source terminals of discrete Si MOSFETs to limit dv/dt-induced false turn-on. Use Value: 45.7 V clamping voltage stays below typical 60 V gate oxide rating; 600 W PPPM handles repetitive commutation surges without degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A-E3/57T | DO-214AC package (SMA), 33 V VBR, 600 W PPPM, but RθJA = 50 °C/W vs. 140 °C/W for T6N33AHM3/I | Larger footprint (4.5 × 2.7 mm), not AEC-Q101 qualified; suitable for industrial PCBs with less thermal constraint | Select when legacy SMA layout exists and automotive qualification is not required |
| TPSMD33A | DO-214AB (SMC) package, 33 V VBR, 1500 W PPPM, but 2.4 mm height vs. 0.88 mm for T6N33AHM3/I | Higher surge capacity but incompatible with ultra-low-profile automotive modules; lacks side-wettable flanks for AOI | Choose for higher-energy transients where board height > 2.0 mm is acceptable and AOI is not mandated |
Compared with SMAJ33A-E3/57T and TPSMD33A, the T6N33AHM3/I delivers superior thermal performance in confined spaces (RθJM = 5 °C/W), AEC-Q101 assurance for automotive production, and AOI-ready DFN3820A packaging - making it the optimal choice for next-generation compact, high-reliability vehicle electronics.
Availability
T6N33AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera interfaces, and body control modules requiring stable component supply with full AEC-Q101 traceability and halogen-free compliance.
Supply support for T6N33AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The T6N33AHM3/I belongs to Vishay's PAR® TVS family, engineered specifically for automotive-grade transient suppression in space-constrained, high-temperature environments - emphasizing AEC-Q101 qualification, low-profile DFN packaging, and robust 10/1000 μs surge handling.
FAQ
What is the breakdown voltage tolerance for T6N33AHM3/I?
The T6N33AHM3/I has a ±5 % breakdown voltage tolerance, confirmed by its "A" suffix in the part numbering scheme. Its VBR range is 31.4 V (min) to 34.7 V (max) at 1.0 mA test current, with 33.0 V nominal. This tight tolerance ensures predictable clamping behavior across production lots and temperature ranges, critical for protecting 24 V automotive systems where overvoltage margins are narrow.
Is T6N33AHM3/I qualified for automotive applications?
Yes, the T6N33AHM3/I is AEC-Q101 qualified, as indicated by the "H" in its ordering code and explicitly stated in Vishay's datasheet revision 10-Nov-2023. It undergoes stress testing for temperature cycling, humidity bias, and mechanical shock per AEC-Q101 requirements, and carries the HM3 suffix confirming halogen-free, RoHS-compliant, and whisker-resistant construction - all mandatory for automotive production use.
What package type does T6N33AHM3/I use, and why is it suitable for automated assembly?
The T6N33AHM3/I uses the DFN3820A package - a 2-terminal, leadless, low-profile (0.88 mm) outline with side-wettable flanks. These flanks enable automatic optical inspection (AOI) of solder joints after reflow, and the matte tin-plated terminals comply with J-STD-002 and JESD 22-B102 for reliable solderability. Its small 3.95 mm × 2.18 mm footprint supports high-density automotive PCB layouts.
How does the clamping voltage of T6N33AHM3/I compare to its breakdown voltage?
The T6N33AHM3/I clamps to 45.7 V at its rated peak pulse current (13.1 A, 10/1000 μs), which is approximately 38 % above its nominal breakdown voltage of 33.0 V. This VC/VBR ratio reflects optimized junction design for low clamping overshoot - essential for protecting 36 V-rated downstream ICs without excessive voltage margin overhead in 24 V systems.
What is the maximum junction temperature rating for T6N33AHM3/I, and how does it impact placement?
The T6N33AHM3/I is rated for a maximum junction temperature (TJ) of +185 °C, significantly exceeding standard industrial limits. This allows placement near heat-generating components such as power MOSFETs or DC-DC converters in engine control units and EPS modules, without derating concerns - provided thermal resistance to mount (RθJM = 5 °C/W typ.) is leveraged via proper copper pour design.
T6N33AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- 2-VDFN
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 13.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN3820A
T6N33AHM3/I FAQ
1.How can I place an order for T6N33AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T6N33AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T6N33AHM3/I reliable?
The price and inventory of T6N33AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N33AHM3/I is usually 5 days.
3.What payment methods are accepted for T6N33AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N33AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T6N33AHM3/I?
T6N33AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T6N33AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T6N33AHM3/I?
For technical support, including T6N33AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N33AHM3/I requirements.
6.How does Aetrix verify that T6N33AHM3/I is sourced from the original manufacturer or authorized distributors?
All T6N33AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N33AHM3/I meets industry standards.
7.What is the process for return or replacement of T6N33AHM3/I?
All T6N33AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T6N33AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T6N33AHM3/I part is unused and in its original packaging.
Return procedure for T6N33AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T6N33AHM3/I Tags
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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