Vishay General Semiconductor - Diodes Division T6N51AHM3/I
- Part No.:
- T6N51AHM3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- 2-VDFN
- Datasheet:
-
T6N51AHM3/I.pdf
- Description:
- LOW-PROFILE VERSION 600 W UNI-DI
- Quantity:
- Payment:

- Shipping:

Inventory:13,930
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Product details
Overview
T6N51AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, with 51 V nominal breakdown voltage (VBR), 43.6 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive-grade reliability. It protects MOSFETs and sensor signal lines against inductive switching transients and lightning surges.
For engineers reviewing the T6N51AHM3/I datasheet, T6N51AHM3/I pinout, T6N51AHM3/I application, or T6N51AHM3/I equivalent, key selection criteria include its 185 °C junction temperature rating, side-wettable flanks for AOI compatibility, unidirectional clamping behavior, and 70.1 V maximum clamping voltage at rated surge current.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology optimized for high-temperature stability and low-leakage performance. Its DFN3820A package features matte tin-plated terminals compliant with J-STD-002 and JESD 22-B102, and meets MSL Level 1 with 260 °C reflow peak.
The device delivers 8.6 A peak pulse current (IPPM) at 10/1000 μs waveform, with thermal resistance junction-to-mount (RθJM) as low as 5 °C/W. Its 0.093 %/°C temperature coefficient of VBR enables predictable voltage drift across -65 °C to +185 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 51.0 V - precise breakdown threshold for reliable overvoltage triggering |
| VWM | 43.6 V - maximum continuous reverse working voltage before leakage rises |
| PPPM (10/1000 μs) | 600 W - surge energy handling capacity for automotive load-dump immunity |
| VC at IPPM | 70.1 V - clamped voltage during full-rated surge, defining protected circuit stress |
| TJ max. | +185 °C - enables operation in under-hood automotive environments without derating |
| Polarity | Unidirectional - provides forward-biased conduction path only for negative transients |
| ESD Immunity | ±30 kV (IEC 61000-4-2 contact/air) - robust electrostatic discharge protection |
Pinout & Package
Package: DFN3820A - leadless, low-profile (0.88 mm typical height), side-wettable flanks for automated optical inspection and high-reliability solder joint formation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Heatsink) | Common cathode reference plane | Thermally conductive mounting pad; must be connected to PCB ground plane for thermal and electrical performance |
| Cathode (K) | Transient current sink | Connected to protected line; conducts surge current to anode when V > VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and ADAS sensor interfaces |
| Side-wettable flanks | Enables automated optical inspection of solder fillets without X-ray, reducing manufacturing defect escape |
| Junction passivation | Minimizes long-term parameter drift and leakage increase under thermal cycling and humidity stress |
| Halogen-free, RoHS-compliant | Meets global environmental compliance requirements without compromising surge performance |
| MSL Level 1 | Allows unlimited floor life and single-reflow processing at 260 °C peak without moisture sensitivity risk |
Applications
| Automotive Engine Control Unit (ECU) | ADAS Camera Sensor Interface |
|---|---|
Use Scenario: Protects microcontroller I/O and CAN transceiver pins from load-dump spikes during alternator regulation failure. IC Role / Device Role / Timing Role: Unidirectional transient suppressor placed between signal line and chassis ground. Use Value: Clamps 70.1 V at 8.6 A surge, limiting stress on 5 V logic inputs while surviving 185 °C under-hood ambient. | Use Scenario: Shields FPD-Link III serial video interface lines from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS on differential data lanes to preserve signal integrity up to 3 Gbps. Use Value: 0.88 mm profile avoids interference with flex-cable routing; side-wettable flanks ensure solder joint reliability in compact camera modules. |
| Electric Power Steering (EPS) Motor Driver | Body Control Module (BCM) LIN Bus |
Use Scenario: Guards gate drivers and current-sense amplifiers against inductive kickback from brushed DC motor commutation. IC Role / Device Role / Timing Role: Fast-response clamp on half-bridge source nodes, referenced to power ground. Use Value: 600 W peak pulse power absorbs repetitive 10/1000 μs transients without degradation; RθJM = 5 °C/W sustains thermal stability during burst-mode operation. | Use Scenario: Suppresses ESD and battery-transient coupling on LIN physical layer transceivers. IC Role / Device Role / Timing Role: Standoff voltage (43.6 V) exceeds 12 V system rail while blocking normal operation leakage. Use Value: 1.0 μA max IR at VWM ensures minimal quiescent current draw in always-on BCM sleep mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A-E3/57T | DO-214AC package; higher RθJA (150 °C/W); 600 W rating but larger footprint and no side-wettable flanks | Less suitable for AOI-dependent SMT lines; not AEC-Q101 qualified | Preferred where legacy through-hole or larger board area is acceptable |
| SMCJ51A | DO-214AB package; 1500 W rating; higher clamping voltage (87.1 V); no AEC-Q101 qualification | Better for industrial surge protection; unsuitable for space-constrained automotive modules | Select when higher energy absorption is required and thermal constraints allow larger package |
Compared with SMAJ51A-E3/57T and SMCJ51A, the T6N51AHM3/I offers superior automotive qualification, smaller DFN3820A footprint, side-wettable flanks for process control, and lower thermal resistance-making it optimal for next-generation compact, high-reliability vehicle electronics.
Availability
T6N51AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera interfaces, and electric power steering systems requiring stable component supply with AEC-Q101 assurance and traceable sourcing.
Supply support for T6N51AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability, high-temperature, and automotive-qualified components.
The T6N51AHM3/I belongs to Vishay's PAR® Transient Voltage Suppressor family, engineered specifically for robust, low-profile protection in automotive powertrain and ADAS subsystems where thermal resilience and automated assembly compatibility are critical.
FAQ
What is the maximum clamping voltage of the T6N51AHM3/I at its rated peak pulse current?
The T6N51AHM3/I has a maximum clamping voltage (VC) of 70.1 V at its rated peak pulse current (IPPM) of 8.6 A under 10/1000 μs waveform conditions. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured per IEC 61000-4-5 test methodology. The T6N51AHM3/I maintains this clamping performance across its full operating temperature range up to +185 °C junction temperature.
Is the T6N51AHM3/I qualified for automotive applications?
Yes, the T6N51AHM3/I is AEC-Q101 qualified and carries the HM3 suffix indicating halogen-free, RoHS-compliant, and lead-free construction meeting automotive reliability standards. It is rated for operation from -65 °C to +185 °C junction temperature and passes JEDEC JESD201 Class 2 whisker testing. The T6N51AHM3/I is explicitly intended for use in automotive ECUs, ADAS sensors, and powertrain modules per Vishay's ordering documentation.
What does the "HM3" suffix mean in T6N51AHM3/I?
The "HM3" suffix in T6N51AHM3/I denotes three key attributes: H indicates AEC-Q101 qualification; M signifies halogen-free material composition; and 3 confirms RoHS compliance and Pb-free terminations. This suffix also implies compliance with JESD201 Class 2 whisker resistance and MSL Level 1 moisture sensitivity rating. The T6N51AHM3/I is therefore certified for high-reliability automotive production environments.
Does the T6N51AHM3/I have side-wettable flanks, and why does that matter?
Yes, the T6N51AHM3/I uses the DFN3820A package with side-wettable flanks, enabling automated optical inspection (AOI) of solder fillets without requiring X-ray. This feature improves manufacturing yield and field reliability by verifying solder joint quality on all four edges. For the T6N51AHM3/I, side-wettable flanks directly support zero-defect assembly goals in automotive electronics production lines where visual solder inspection is mandatory.
What is the thermal resistance from junction to mount (RθJM) for the T6N51AHM3/I?
The T6N51AHM3/I has a typical junction-to-mount thermal resistance (RθJM) of 5 °C/W, measured using JEDEC 51-14 transient dual-interface method. This low value reflects efficient heat transfer from the silicon die to the PCB copper pad via the exposed anode heatsink. In practical design, this allows the T6N51AHM3/I to sustain repeated surge events in thermally constrained automotive modules without exceeding its 185 °C maximum junction temperature.
T6N51AHM3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- 2-VDFN
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 8.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- DFN3820A
T6N51AHM3/I FAQ
1.How can I place an order for T6N51AHM3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for T6N51AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for T6N51AHM3/I reliable?
The price and inventory of T6N51AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N51AHM3/I is usually 5 days.
3.What payment methods are accepted for T6N51AHM3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N51AHM3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for T6N51AHM3/I?
T6N51AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your T6N51AHM3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for T6N51AHM3/I?
For technical support, including T6N51AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N51AHM3/I requirements.
6.How does Aetrix verify that T6N51AHM3/I is sourced from the original manufacturer or authorized distributors?
All T6N51AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N51AHM3/I meets industry standards.
7.What is the process for return or replacement of T6N51AHM3/I?
All T6N51AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T6N51AHM3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The T6N51AHM3/I part is unused and in its original packaging.
Return procedure for T6N51AHM3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
T6N51AHM3/I Tags

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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