Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division T6N51AHM3/I

Part No.:
T6N51AHM3/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
2-VDFN
Datasheet:
AetrixT6N51AHM3/I.pdf
Description:
LOW-PROFILE VERSION 600 W UNI-DI
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:13,930

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

T6N51AHM3/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor in DFN3820A package, with 51 V nominal breakdown voltage (VBR), 43.6 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive-grade reliability. It protects MOSFETs and sensor signal lines against inductive switching transients and lightning surges.

For engineers reviewing the T6N51AHM3/I datasheet, T6N51AHM3/I pinout, T6N51AHM3/I application, or T6N51AHM3/I equivalent, key selection criteria include its 185 °C junction temperature rating, side-wettable flanks for AOI compatibility, unidirectional clamping behavior, and 70.1 V maximum clamping voltage at rated surge current.

Technical Context

This TVS diode employs passivated anisotropic rectifier technology optimized for high-temperature stability and low-leakage performance. Its DFN3820A package features matte tin-plated terminals compliant with J-STD-002 and JESD 22-B102, and meets MSL Level 1 with 260 °C reflow peak.

The device delivers 8.6 A peak pulse current (IPPM) at 10/1000 μs waveform, with thermal resistance junction-to-mount (RθJM) as low as 5 °C/W. Its 0.093 %/°C temperature coefficient of VBR enables predictable voltage drift across -65 °C to +185 °C operating range.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (Nominal)51.0 V - precise breakdown threshold for reliable overvoltage triggering
VWM43.6 V - maximum continuous reverse working voltage before leakage rises
PPPM (10/1000 μs)600 W - surge energy handling capacity for automotive load-dump immunity
VC at IPPM70.1 V - clamped voltage during full-rated surge, defining protected circuit stress
TJ max.+185 °C - enables operation in under-hood automotive environments without derating
PolarityUnidirectional - provides forward-biased conduction path only for negative transients
ESD Immunity±30 kV (IEC 61000-4-2 contact/air) - robust electrostatic discharge protection

Pinout & Package

Package: DFN3820A - leadless, low-profile (0.88 mm typical height), side-wettable flanks for automated optical inspection and high-reliability solder joint formation.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Heatsink)Common cathode reference planeThermally conductive mounting pad; must be connected to PCB ground plane for thermal and electrical performance
Cathode (K)Transient current sinkConnected to protected line; conducts surge current to anode when V > VBR

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control units and ADAS sensor interfaces
Side-wettable flanksEnables automated optical inspection of solder fillets without X-ray, reducing manufacturing defect escape
Junction passivationMinimizes long-term parameter drift and leakage increase under thermal cycling and humidity stress
Halogen-free, RoHS-compliantMeets global environmental compliance requirements without compromising surge performance
MSL Level 1Allows unlimited floor life and single-reflow processing at 260 °C peak without moisture sensitivity risk

Applications

Automotive Engine Control Unit (ECU)ADAS Camera Sensor Interface

Use Scenario: Protects microcontroller I/O and CAN transceiver pins from load-dump spikes during alternator regulation failure.

IC Role / Device Role / Timing Role: Unidirectional transient suppressor placed between signal line and chassis ground.

Use Value: Clamps 70.1 V at 8.6 A surge, limiting stress on 5 V logic inputs while surviving 185 °C under-hood ambient.

Use Scenario: Shields FPD-Link III serial video interface lines from ESD and cable discharge events.

IC Role / Device Role / Timing Role: Low-capacitance TVS on differential data lanes to preserve signal integrity up to 3 Gbps.

Use Value: 0.88 mm profile avoids interference with flex-cable routing; side-wettable flanks ensure solder joint reliability in compact camera modules.

Electric Power Steering (EPS) Motor DriverBody Control Module (BCM) LIN Bus

Use Scenario: Guards gate drivers and current-sense amplifiers against inductive kickback from brushed DC motor commutation.

IC Role / Device Role / Timing Role: Fast-response clamp on half-bridge source nodes, referenced to power ground.

Use Value: 600 W peak pulse power absorbs repetitive 10/1000 μs transients without degradation; RθJM = 5 °C/W sustains thermal stability during burst-mode operation.

Use Scenario: Suppresses ESD and battery-transient coupling on LIN physical layer transceivers.

IC Role / Device Role / Timing Role: Standoff voltage (43.6 V) exceeds 12 V system rail while blocking normal operation leakage.

Use Value: 1.0 μA max IR at VWM ensures minimal quiescent current draw in always-on BCM sleep mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ51A-E3/57TDO-214AC package; higher RθJA (150 °C/W); 600 W rating but larger footprint and no side-wettable flanksLess suitable for AOI-dependent SMT lines; not AEC-Q101 qualifiedPreferred where legacy through-hole or larger board area is acceptable
SMCJ51ADO-214AB package; 1500 W rating; higher clamping voltage (87.1 V); no AEC-Q101 qualificationBetter for industrial surge protection; unsuitable for space-constrained automotive modulesSelect when higher energy absorption is required and thermal constraints allow larger package

Compared with SMAJ51A-E3/57T and SMCJ51A, the T6N51AHM3/I offers superior automotive qualification, smaller DFN3820A footprint, side-wettable flanks for process control, and lower thermal resistance-making it optimal for next-generation compact, high-reliability vehicle electronics.

Availability

T6N51AHM3/I is available at Aetrix Electronics and suitable for automotive engine control units, ADAS camera interfaces, and electric power steering systems requiring stable component supply with AEC-Q101 assurance and traceable sourcing.

Supply support for T6N51AHM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability, high-temperature, and automotive-qualified components.

The T6N51AHM3/I belongs to Vishay's PAR® Transient Voltage Suppressor family, engineered specifically for robust, low-profile protection in automotive powertrain and ADAS subsystems where thermal resilience and automated assembly compatibility are critical.

FAQ

What is the maximum clamping voltage of the T6N51AHM3/I at its rated peak pulse current?

The T6N51AHM3/I has a maximum clamping voltage (VC) of 70.1 V at its rated peak pulse current (IPPM) of 8.6 A under 10/1000 μs waveform conditions. This value defines the upper voltage limit imposed on protected circuitry during surge events and is measured per IEC 61000-4-5 test methodology. The T6N51AHM3/I maintains this clamping performance across its full operating temperature range up to +185 °C junction temperature.

Is the T6N51AHM3/I qualified for automotive applications?

Yes, the T6N51AHM3/I is AEC-Q101 qualified and carries the HM3 suffix indicating halogen-free, RoHS-compliant, and lead-free construction meeting automotive reliability standards. It is rated for operation from -65 °C to +185 °C junction temperature and passes JEDEC JESD201 Class 2 whisker testing. The T6N51AHM3/I is explicitly intended for use in automotive ECUs, ADAS sensors, and powertrain modules per Vishay's ordering documentation.

What does the "HM3" suffix mean in T6N51AHM3/I?

The "HM3" suffix in T6N51AHM3/I denotes three key attributes: H indicates AEC-Q101 qualification; M signifies halogen-free material composition; and 3 confirms RoHS compliance and Pb-free terminations. This suffix also implies compliance with JESD201 Class 2 whisker resistance and MSL Level 1 moisture sensitivity rating. The T6N51AHM3/I is therefore certified for high-reliability automotive production environments.

Does the T6N51AHM3/I have side-wettable flanks, and why does that matter?

Yes, the T6N51AHM3/I uses the DFN3820A package with side-wettable flanks, enabling automated optical inspection (AOI) of solder fillets without requiring X-ray. This feature improves manufacturing yield and field reliability by verifying solder joint quality on all four edges. For the T6N51AHM3/I, side-wettable flanks directly support zero-defect assembly goals in automotive electronics production lines where visual solder inspection is mandatory.

What is the thermal resistance from junction to mount (RθJM) for the T6N51AHM3/I?

The T6N51AHM3/I has a typical junction-to-mount thermal resistance (RθJM) of 5 °C/W, measured using JEDEC 51-14 transient dual-interface method. This low value reflects efficient heat transfer from the silicon die to the PCB copper pad via the exposed anode heatsink. In practical design, this allows the T6N51AHM3/I to sustain repeated surge events in thermally constrained automotive modules without exceeding its 185 °C maximum junction temperature.

T6N51AHM3/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
2-VDFN
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
43.6V
Voltage - Breakdown (Min):
48.5V
Voltage - Clamping (Max) @ Ipp:
70.1V
Current - Peak Pulse (10/1000µs):
8.6A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount, Wettable Flank
Supplier Device Package:
DFN3820A

T6N51AHM3/I FAQ

1.How can I place an order for T6N51AHM3/I through Aetrix?

Please submit a Request for Quotation (RFQ) for T6N51AHM3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for T6N51AHM3/I reliable?

The price and inventory of T6N51AHM3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for T6N51AHM3/I is usually 5 days.

3.What payment methods are accepted for T6N51AHM3/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for T6N51AHM3/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for T6N51AHM3/I?

T6N51AHM3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your T6N51AHM3/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for T6N51AHM3/I?

For technical support, including T6N51AHM3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your T6N51AHM3/I requirements.

6.How does Aetrix verify that T6N51AHM3/I is sourced from the original manufacturer or authorized distributors?

All T6N51AHM3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that T6N51AHM3/I meets industry standards.

7.What is the process for return or replacement of T6N51AHM3/I?

All T6N51AHM3/I units undergo pre-shipment inspection (PSI). If there is an issue with T6N51AHM3/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The T6N51AHM3/I part is unused and in its original packaging.

Return procedure for T6N51AHM3/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

T6N51AHM3/I Tags

  • T6N51AHM3/I
  • T6N51AHM3/I PDF
  • T6N51AHM3/I Datasheet
  • T6N51AHM3/I Specifications
  • T6N51AHM3/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division T6N51AHM3/I
  • Buy T6N51AHM3/I
  • T6N51AHM3/I Price
  • T6N51AHM3/I Distributor
  • T6N51AHM3/I Supplier
  • T6N51AHM3/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER