Vishay General Semiconductor - Diodes Division TA6F12AHM3_A/I
- Part No.:
- TA6F12AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F12AHM3_A/I.pdf
- Description:
- TVS DIODE 10.2VWM 16.7VC DO221AC
- Quantity:
- Payment:

- Shipping:

Inventory:5,818
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Product details
Overview
TA6F12AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, featuring 12.0 V nominal breakdown voltage (VBR), 10.2 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the TA6F12AHM3_A/I datasheet, TA6F12AHM3_A/I pinout, TA6F12AHM3_A/I application, or TA6F12AHM3_A/I equivalent, this device serves as a high-temperature-stable clamping solution for protecting automotive sensor signal lines, MOSFET gate drivers, and microcontroller I/O against inductive switching transients and ESD up to 30 kV.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repeated surge stress. Its unidirectional configuration enables precise reverse-biased protection of DC rails and signal paths without forward conduction interference.
Designed for TJ = 185 °C operation and MSL Level 1 reflow compatibility (260 °C peak), the TA6F12AHM3_A/I supports automated placement on FR4 PCBs using minimum recommended pad layout, delivering 35.9 V maximum clamping voltage at 16.7 A peak pulse current (IPPM) under 10/1000 µs waveform.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 11.4 / 12.0 / 12.6 V - Ensures reliable triggering above system operating voltage while avoiding false clamping during normal operation |
| VWM | 10.2 V - Maximum continuous reverse voltage the device blocks without significant leakage (≤2.0 µA at 25 °C) |
| PPPM (10/1000 µs) | 600 W - Sustains high-energy transients common in automotive load-dump and inductive-switching events |
| IPPM | 16.7 A - Peak surge current capability at clamping voltage of 35.9 V, defining real-world surge handling margin |
| TJ max | 185 °C - Enables operation in under-hood automotive environments and high-power-density PCB layouts |
| ESD rating | 30 kV contact/air per IEC 61000-4-2 - Provides robust immunity against human-body-model electrostatic discharge |
| Thermal resistance RθJA | 120–150 °C/W - Determines temperature rise under steady-state power dissipation (1.1 W at 25 °C ambient) |
Pinout & Package
Package: SlimSMA (DO-221AC), ultra-low-profile surface-mount case with 0.95 mm typical height, matte tin-plated terminals, halogen-free and RoHS-compliant molding compound (UL 94 V-0 rated). Polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during clamping | Connected to protected line (e.g., sensor output); conducts surge current toward ground when VWM exceeded |
| Cathode | Current exit terminal during clamping | Connected to reference plane (e.g., chassis or IC ground); defines unidirectional clamping polarity and voltage threshold |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable VBR drift <0.070 %/°C and long-term reliability under thermal cycling and humidity exposure |
| AEC-Q101 qualification | Validates suitability for automotive applications including engine control units, ADAS sensors, and body electronics |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow without preconditioning or special handling requirements |
| Low-profile SlimSMA package | 0.95 mm height allows integration into space-constrained modules such as camera ECUs and radar front-ends |
| 30 kV IEC 61000-4-2 ESD protection | Eliminates need for additional discrete ESD components on sensitive analog or communication lines |
Applications
| Automotive Sensor Protection | Power Supply Rail Clamping |
|---|---|
|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load-dump and ISO 7637-2 pulses in vehicle ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed between signal line and ground, triggered within nanoseconds of overvoltage onset. Use Value: Limits transient voltage to ≤35.9 V at 16.7 A, preventing latch-up or damage to 5 V or 3.3 V interface ICs while maintaining signal integrity. |
Use Scenario: Safeguarding 12 V automotive power rails feeding microcontrollers and driver ICs against battery reverse connection and alternator load dump. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main supply input, absorbing up to 600 W surges with minimal board footprint. Use Value: Withstands 10/1000 µs pulses up to 16.7 A while maintaining 10.2 V stand-off, enabling direct integration without series resistors or RC filters. |
| MOSFET Gate Protection | Industrial I/O Interface Protection |
|
Use Scenario: Shielding N-channel MOSFET gates in motor drive half-bridges from Miller-induced voltage spikes during fast switching transitions. IC Role / Device Role / Timing Role: Fast-response unidirectional clamp connected between gate and source, suppressing dv/dt-induced overshoot before gate oxide breakdown. Use Value: Clamps gate-source voltage to ≤35.9 V within <1 ns, preserving 20 V-rated gate oxide integrity and preventing unintended turn-on. |
Use Scenario: Hardening RS-485/RS-232 data lines in factory automation controllers exposed to lightning-induced surges on long cable runs. IC Role / Device Role / Timing Role: Line-side TVS on differential pair inputs, shunting common-mode transients to ground before receiver input stage. Use Value: Delivers 30 kV ESD immunity and 600 W surge capacity while adding only 0.032 g mass and no capacitance penalty (>1 MHz bandwidth preserved). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A | Same SlimSMA package, but lower PPPM (400 W), higher VC (20.9 V @ 19.2 A), and no AEC-Q101 qualification | Limited to industrial/commercial use; not validated for automotive temperature cycling or humidity testing | Select SMAJ12A only for cost-sensitive non-automotive designs where 400 W surge margin suffices |
| TPSMA6L12A | Higher PPPM (600 W), same VBR range, but larger SMA package (1.75 mm height) and no MSL Level 1 rating | Requires PCB rework for height clearance; unsuitable for automated placement in high-volume automotive SMT lines | Choose TPSMA6L12A only if existing SMA footprint must be retained and 0.95 mm profile is not required |
Compared with SMAJ12A and TPSMA6L12A, the TA6F12AHM3_A/I uniquely combines AEC-Q101 qualification, MSL Level 1 reflow compatibility, and 0.95 mm profile in a single SlimSMA device-enabling drop-in replacement in next-generation automotive modules without layout or process changes.
Availability
TA6F12AHM3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, power rail clamping, and industrial I/O interface protection requiring stable component supply across extended temperature ranges and high-reliability production programs.
Supply support for TA6F12AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The TA6F12AHM3_A/I belongs to Vishay's PAR® family of surface-mount TVS diodes, engineered specifically for AEC-Q101-compliant automotive electronics requiring high-temperature stability, low-profile packaging, and repeatable clamping performance.
FAQ
What is the clamping voltage of the TA6F12AHM3_A/I at its rated peak pulse current?
The TA6F12AHM3_A/I exhibits a maximum clamping voltage (VC) of 35.9 V at its specified peak pulse current (IPPM) of 16.7 A under the 10/1000 µs waveform condition. This value is measured per JEDEC standards and ensures predictable voltage limiting during surge events. The TA6F12AHM3_A/I maintains this clamping performance across its full operating temperature range, supporting robust protection in automotive under-hood environments.
Is the TA6F12AHM3_A/I suitable for use in automotive applications?
Yes, the TA6F12AHM3_A/I is AEC-Q101 qualified and rated for junction temperatures up to +185 °C, making it suitable for automotive applications including engine control units, ADAS sensors, and body electronics. Its SlimSMA package meets MSL Level 1 reflow requirements, and its 30 kV ESD rating complies with IEC 61000-4-2. The TA6F12AHM3_A/I is explicitly designed for automotive-grade reliability under thermal cycling and humidity stress.
What does the "HM3_A/I" suffix indicate in TA6F12AHM3_A/I?
The "HM3" denotes Vishay's SlimSMA (DO-221AC) package variant with halogen-free, RoHS-compliant materials and AEC-Q101 qualification. The "A" is the revision code, and "I" specifies the packaging format: 13-inch diameter plastic tape and reel with 14,000 units per reel. This differs from the "H" option (7-inch reel, 3,500 units), enabling high-volume automated assembly for Tier 1 automotive suppliers using TA6F12AHM3_A/I.
How does the TA6F12AHM3_A/I compare to standard SMAJ-series TVS diodes?
The TA6F12AHM3_A/I delivers identical 12 V standoff and clamping performance as SMAJ12A but adds AEC-Q101 qualification, 185 °C junction rating, and MSL Level 1 reflow compatibility. Unlike SMAJ12A, the TA6F12AHM3_A/I uses passivated anisotropic rectifier technology for improved temperature stability (0.070 %/°C VBR coefficient) and long-term reliability. These enhancements make TA6F12AHM3_A/I appropriate for mission-critical automotive systems where SMAJ12A is insufficient.
What is the thermal resistance of the TA6F12AHM3_A/I when mounted on a standard FR4 PCB?
The TA6F12AHM3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 120 °C/W when mounted on an FR4 PCB with the minimum recommended pad layout per JEDEC 51-2A. This value increases to 150 °C/W maximum under worst-case board conditions. Engineers must account for this thermal impedance when calculating junction temperature rise under sustained power dissipation, especially in sealed automotive enclosures where ambient temperature exceeds 85 °C.
TA6F12AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- *
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10.2V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.7V
- Current - Peak Pulse (10/1000µs):
- 35.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F12AHM3_A/I FAQ
1.How can I place an order for TA6F12AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F12AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F12AHM3_A/I reliable?
The price and inventory of TA6F12AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F12AHM3_A/I is usually 5 days.
3.What payment methods are accepted for TA6F12AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F12AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F12AHM3_A/I?
TA6F12AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F12AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F12AHM3_A/I?
For technical support, including TA6F12AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F12AHM3_A/I requirements.
6.How does Aetrix verify that TA6F12AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All TA6F12AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F12AHM3_A/I meets industry standards.
7.What is the process for return or replacement of TA6F12AHM3_A/I?
All TA6F12AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TA6F12AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F12AHM3_A/I part is unused and in its original packaging.
Return procedure for TA6F12AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F12AHM3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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