Vishay General Semiconductor - Diodes Division TA6F18AHM3_A/I
- Part No.:
- TA6F18AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F18AHM3_A/I.pdf
- Description:
- TVS DIODE 15.3VWM 25.5VC DO221AC
- Quantity:
- Payment:

- Shipping:

Inventory:9,089
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TA6F18AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, featuring 18.0 V nominal breakdown voltage (VBR), 15.3 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the TA6F18AHM3_A/I datasheet, TA6F18AHM3_A/I pinout, TA6F18AHM3_A/I application, or TA6F18AHM3_A/I equivalent, this device serves as a high-temperature-stable clamping protector for automotive sensor signal lines, MOSFET gate drivers, and low-voltage IC interfaces requiring ESD immunity up to 30 kV and junction temperature capability to +185 °C.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repetitive transients. Its unidirectional configuration enables precise reverse-biased protection of DC-powered circuits without forward conduction during normal operation.
The SlimSMA (DO-221AC) package delivers ultra-low profile (0.95 mm typical height), MSL Level 1 rating, and matte tin-plated terminals solderable per J-STD-002 - enabling robust automated placement in space-constrained automotive PCBs while maintaining thermal resistance RθJA ≤ 150 °C/W on standard FR4 layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 17.1 / 18.0 / 18.9 V at 1.0 mA - defines precise clamping onset threshold for overvoltage events |
| VWM | 15.3 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 μA |
| IPPM (10/1000 μs) | 25.5 A - peak surge current handling capacity without degradation |
| VC @ IPPM | 23.5 V - clamped voltage during full-rated surge, limiting stress on downstream components |
| TJ max | +185 °C - enables operation in under-hood automotive environments without derating |
| ESD Rating | ±30 kV contact/air per IEC 61000-4-2 - eliminates need for additional ESD stages in sensor interface paths |
| Power Dissipation (TM = 65 °C) | 8 W - supports sustained transient energy absorption on thermally constrained layouts |
Pinout & Package
SlimSMA (DO-221AC) package: surface-mount, low-profile (0.95 mm height), cathode-indicating color band, matte tin-plated terminals, RoHS-compliant and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Reference node for unidirectional clamping | Connected to circuit ground or low-side return path; establishes reverse-bias polarity for transient suppression |
| Cathode | Protected line connection point | Connected to protected signal or power rail; conducts surge current to ground when VAK > VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTOL, TC, and HAST |
| Junction temperature rating: +185 °C | Enables deployment in engine control units, ADAS sensors, and other high-ambient-temperature zones |
| Peak pulse power: 600 W (10/1000 μs) | Withstands ISO 7637-2 Pulse 1, 2a, 3a/b, and IEC 61000-4-5 surge waveforms without failure |
| Clamping voltage: 23.5 V @ 25.5 A | Provides safe margin below 24 V system overvoltage thresholds while minimizing forward drop impact |
| MSL Level 1, 260 °C reflow compatible | Supports single-pass lead-free assembly without moisture-related popcorning or delamination |
Applications
| Automotive Sensor Protection | 24 V Power Rail Clamping |
|---|---|
Use Scenario: Protecting LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load-dump and inductive switching transients in vehicle body electronics. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp negative-going spikes and positive surges above VWM. Use Value: Maintains signal integrity below 15.3 V standby while clamping to 23.5 V during 25.5 A surges - preventing latch-up or damage to 16 V-rated transceivers. |
Use Scenario: Safeguarding 24 V supply inputs to ECUs, lighting modules, and motor drivers against ISO 16750-2 load-dump events (up to 35 V, 400 ms). IC Role / Device Role / Timing Role: Parallel-connected TVS absorbing transient energy across input capacitor to limit rail excursion during battery disconnect events. Use Value: Withstands 600 W peak pulses and operates continuously up to +185 °C - enabling direct placement near high-power switches without thermal derating. |
| MOSFET Gate Driver Protection | Infotainment Interface ESD Suppression |
Use Scenario: Shielding high-speed gate drive signals (e.g., for SiC MOSFETs in DC-DC converters) from coupling-induced transients and cross-talk. IC Role / Device Role / Timing Role: Low-capacitance (<100 pF) unidirectional TVS placed at driver output to shunt fast-rising edges before reaching gate oxide. Use Value: 30 kV IEC 61000-4-2 ESD immunity ensures no functional interruption during assembly or field handling - critical for production yield and field reliability. |
Use Scenario: Hardening USB, CAN FD, or LVDS interfaces in head units and display modules against human-body-model (HBM) and system-level ESD events. IC Role / Device Role / Timing Role: Point-of-entry TVS on differential or single-ended lines to divert discharge current before reaching PHY or controller pins. Use Value: SlimSMA footprint (2.7 × 5.5 mm) allows placement within tight connector keepouts while delivering 23.5 V clamping - preserving signal eye diagram integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ18A | Same VWM (15.3 V) and VC (23.5 V), but lower PPPM (400 W) and TJ max (+150 °C) | Limited to under-hood ambient ≤ +125 °C; not AEC-Q101 qualified | Select SMAJ18A only for cost-sensitive industrial applications where automotive qualification and +185 °C operation are unnecessary |
| SMCJ18A | Higher PPPM (1500 W), same VWM/VC, but larger DO-214AB package (7.11 × 6.22 mm) | Requires 2.5× more PCB area; unsuitable for dense automotive modules | Choose SMCJ18A only when surge energy exceeds 600 W and board space permits larger footprint |
Compared with SMAJ18A and SMCJ18A, TA6F18AHM3_A/I uniquely combines AEC-Q101 qualification, +185 °C junction rating, and SlimSMA packaging - making it the only option that satisfies simultaneous requirements for automotive under-hood placement, high-energy transient suppression, and miniaturized layout.
Availability
TA6F18AHM3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, 24 V power rail clamping, and MOSFET gate driver safeguarding requiring stable component supply across high-volume OEM programs.
Supply support for TA6F18AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices for automotive, industrial, and computing markets.
The TA6F series belongs to Vishay's PAR® family of high-reliability transient suppressors, engineered specifically for automotive-grade surge and ESD protection in space-constrained, high-temperature environments.
FAQ
What is the clamping voltage of TA6F18AHM3_A/I at its rated peak pulse current?
The TA6F18AHM3_A/I exhibits a maximum clamping voltage (VC) of 23.5 V when subjected to its rated peak pulse current (IPPM) of 25.5 A under the standard 10/1000 μs waveform. This value is measured per the manufacturer's test conditions and ensures downstream components remain within safe operating limits during surge events. The TA6F18AHM3_A/I maintains this performance across its full operational temperature range.
Is TA6F18AHM3_A/I qualified for automotive applications?
Yes, TA6F18AHM3_A/I is AEC-Q101 qualified, having passed all required stress tests including high-temperature operating life (HTOL), temperature cycling (TC), and highly accelerated stress testing (HAST). It is explicitly intended for automotive use cases such as sensor protection and power rail clamping in engine control units and ADAS systems. The TA6F18AHM3_A/I also supports junction temperatures up to +185 °C, exceeding typical automotive under-hood requirements.
What package type does TA6F18AHM3_A/I use, and what are its key mechanical features?
TA6F18AHM3_A/I uses the SlimSMA (DO-221AC) surface-mount package, measuring 2.70 × 5.52 mm with a typical height of 0.95 mm. Key mechanical features include a cathode-indicating color band, matte tin-plated terminals compliant with J-STD-002, MSL Level 1 rating for 260 °C lead-free reflow, and UL 94 V-0 flammability certification. The TA6F18AHM3_A/I package is halogen-free and RoHS-compliant.
How does the thermal performance of TA6F18AHM3_A/I compare to standard SMA packages?
TA6F18AHM3_A/I achieves a typical junction-to-mount thermal resistance (RθJM) of 12 °C/W and maximum RθJA of 150 °C/W on standard FR4 PCBs - significantly better than legacy SMA packages due to optimized die attach and thermal pad design. This enables higher sustained power dissipation (8 W at TM = 65 °C) and reliable operation at +185 °C junction temperature. The TA6F18AHM3_A/I thermal architecture supports compact, high-density automotive layouts without external heatsinking.
What is the ESD withstand capability of TA6F18AHM3_A/I, and how is it tested?
TA6F18AHM3_A/I provides ±30 kV ESD protection per IEC 61000-4-2, verified using both contact and air discharge methods with a 150 pF capacitor and 330 Ω source impedance. This rating applies across its full operating temperature range and ensures robust immunity during handling, assembly, and field operation. The TA6F18AHM3_A/I achieves this performance through junction passivation and optimized anisotropic rectifier structure - eliminating need for supplemental ESD components in sensitive signal paths.
TA6F18AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- *
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15.3V
- Voltage - Breakdown (Min):
- 17.1V
- Voltage - Clamping (Max) @ Ipp:
- 25.5V
- Current - Peak Pulse (10/1000µs):
- 23.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F18AHM3_A/I FAQ
1.How can I place an order for TA6F18AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F18AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F18AHM3_A/I reliable?
The price and inventory of TA6F18AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F18AHM3_A/I is usually 5 days.
3.What payment methods are accepted for TA6F18AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F18AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F18AHM3_A/I?
TA6F18AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F18AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F18AHM3_A/I?
For technical support, including TA6F18AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F18AHM3_A/I requirements.
6.How does Aetrix verify that TA6F18AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All TA6F18AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F18AHM3_A/I meets industry standards.
7.What is the process for return or replacement of TA6F18AHM3_A/I?
All TA6F18AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TA6F18AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F18AHM3_A/I part is unused and in its original packaging.
Return procedure for TA6F18AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F18AHM3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

