Vishay General Semiconductor - Diodes Division TA6F22AHM3/6B
- Part No.:
- TA6F22AHM3/6B
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F22AHM3/6B.pdf
- Description:
- TVS DIODE 18.8VWM 30.6VC DO221AC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TA6F22AHM3/6B from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive switching transients and ESD events on signal lines and power rails. It features a breakdown voltage of 20.9–23.1 V at 1 mA, clamps to ≤30.6 V at 19.6 A (10/1000 μs), delivers 600 W peak pulse power, operates up to +185 °C junction temperature, and is AEC-Q101 qualified for automotive electronics protection.
For engineers reviewing the TA6F22AHM3/6B datasheet, TA6F22AHM3/6B pinout, TA6F22AHM3/6B application, or TA6F22AHM3/6B equivalent, key selection criteria include unidirectional clamping behavior, DO-221AC (SlimSMA) package compatibility with automated placement, 185 °C TJ rating for under-hood use, IEC 61000-4-2 Level 4 ESD immunity, and thermal resistance (RθJA = 145 °C/W) on standard FR-4 layouts.
Technical Context
The TA6F22AHM3/6B employs passivated anisotropic rectifier technology optimized for high-temperature stability and low-profile mounting. Its unidirectional architecture provides forward conduction path during overvoltage events while maintaining low leakage (<1 μA at 18.8 V, TJ = 150 °C) and precise stand-off voltage (VWM = 18.8 V).
Designed for transient suppression in automotive and industrial environments, it meets MSL Level 1 per J-STD-020, supports 260 °C lead-free reflow, and uses matte tin-plated terminals compliant with J-STD-002 and JESD22-B102. The device's 0.95 mm typical height enables dense PCB layouts without compromising thermal performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage (VBR) | 20.9–23.1 V at 1 mA - defines minimum clamping threshold and ensures reliable turn-on before downstream IC damage |
| Stand-off Voltage (VWM) | 18.8 V - maximum continuous reverse voltage before significant leakage; matches 18–20 V rail systems |
| Clamping Voltage (VC) | ≤30.6 V at 19.6 A (10/1000 μs) - limits transient voltage seen by protected circuitry |
| Peak Pulse Power (PPPM) | 600 W (10/1000 μs) - handles high-energy surges from inductive loads like solenoids or motors |
| Junction Temperature (TJ max) | +185 °C - enables operation in engine control units, ADAS modules, and other high-ambient zones |
| ESD Rating | IEC 61000-4-2 Level 4: ±15 kV air / ±8 kV contact - protects sensor interfaces against human-body-model discharges |
| Thermal Resistance (RθJA) | 145 °C/W - determines safe power derating on standard FR-4 board with minimum pad layout |
Pinout & Package
Package: DO-221AC (SlimSMA), 2-terminal surface-mount package with cathode band marking; 0.95 mm typical height, 2.70 × 1.20 mm footprint; halogen-free, RoHS-compliant, AEC-Q101 qualified.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point during clamping | Connected to protected line (e.g., CAN_H, LIN, sensor output); forms low-impedance path to ground when V > VBR |
| Cathode | Reverse-biased terminal; marked by color band | Connected to system ground or lower-potential rail; defines unidirectional conduction direction and polarity-sensitive placement |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.95 mm height) | Enables stacking under connectors or in space-constrained automotive modules without mechanical interference |
| AEC-Q101 qualification | Validates reliability for automotive powertrain, body electronics, and ADAS applications per stress-test requirements |
| Junction passivation design | Reduces parameter drift and leakage increase at elevated temperatures up to 185 °C |
| Matte tin plating (JESD201 Class 2 whisker tested) | Ensures long-term solder joint integrity in high-vibration environments and repeated thermal cycling |
| MSL Level 1 (260 °C peak) | Permits single-pass lead-free reflow without moisture-induced popcorning or delamination |
Applications
| Automotive Sensor Protection | Industrial CAN Bus Interface |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, or position sensors in engine control units exposed to load-dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between sensor output and microcontroller ADC input to clamp transients before signal conditioning stage. Use Value: Prevents ADC saturation and latch-up by limiting voltage to ≤30.6 V during 19.6 A surge, preserving measurement accuracy and system uptime. |
Use Scenario: Safeguarding CAN_H/CAN_L differential pair in vehicle infotainment gateways subjected to ESD and bus fault conditions. IC Role / Device Role / Timing Role: Discrete TVS mounted on each CAN line to absorb common-mode transients while maintaining signal integrity below 1 Mbps. Use Value: Maintains CAN communication continuity during ±15 kV air-gap ESD events and suppresses 600 W inductive spikes without degrading rise/fall times. |
| Consumer Appliance Motor Control | Telecom Power Rail Clamping |
Use Scenario: Shielding MCU GPIOs and driver ICs from back-EMF generated by brushed DC motors in washing machines and HVAC blowers. IC Role / Device Role / Timing Role: TVS placed across motor coil terminals and near H-bridge inputs to divert energy away from logic-level components. Use Value: Absorbs repetitive 600 W pulses without degradation, enabling 10-year field life under frequent motor start-stop cycles. |
Use Scenario: Guarding 24 V DC power inputs of VoIP phones and base stations against lightning-induced surges on PoE or wall-adapter lines. IC Role / Device Role / Timing Role: Primary clamping device on input rail upstream of DC/DC converter, sized for 10/1000 μs waveform compliance. Use Value: Limits rail voltage excursion to ≤30.6 V during 19.6 A surge, preventing overvoltage shutdown of downstream PMICs and regulators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ22A-E3/57T (Vishay) | Same DO-214AC package; higher RθJA (195 °C/W); VBR = 24.4–26.9 V; VC = 35.5 V at 17.1 A | Less effective clamping margin for 24 V systems; lower surge current handling | Select SMAJ22A-E3/57T only if legacy board reuse requires DO-214AC footprint and higher VBR is acceptable |
| TPSMD22A (Texas Instruments) | DO-214AB package; VBR = 23.1–25.5 V; VC = 33.2 V at 18.1 A; no AEC-Q101 qualification | Not rated for automotive under-hood use; lacks 185 °C TJ capability and MSL Level 1 reflow support | Prefer TPSMD22A for cost-sensitive industrial controls where AEC-Q101 and high-TJ are not required |
Compared with SMAJ22A-E3/57T and TPSMD22A, the TA6F22AHM3/6B offers superior thermal robustness (185 °C TJ), tighter clamping (30.6 V vs. ≥33.2 V), and verified automotive qualification-making it the preferred choice for next-generation automotive ECUs and high-reliability industrial controllers.
Availability
TA6F22AHM3/6B is available at Aetrix Electronics and suitable for automotive sensor protection, industrial CAN bus interface, and telecom power rail clamping requiring stable component supply, long-lifecycle assurance, and AEC-Q101 traceability.
Supply support for TA6F22AHM3/6B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and TVS devices with emphasis on reliability, high-temperature operation, and automotive-grade qualification.
The TA6F22AHM3/6B belongs to Vishay's PAR® (Protection Array Rectifier) family, engineered specifically for high-energy transient suppression in harsh environments-including under-hood automotive, industrial automation, and infrastructure equipment.
FAQ
What is the exact breakdown voltage range for TA6F22AHM3/6B?
The TA6F22AHM3/6B has a guaranteed breakdown voltage (VBR) range of 20.9 V to 23.1 V at 1 mA test current, measured per the Vishay datasheet (Document Number: 89939). This specification ensures consistent clamping behavior across production lots and validates its suitability for 18–24 V system protection where precise turn-on voltage is critical. The TA6F22AHM3/6B maintains this tolerance under standard test conditions at TA = 25 °C.
Is TA6F22AHM3/6B compatible with lead-free reflow processes?
Yes, the TA6F22AHM3/6B is fully compatible with lead-free reflow, meeting J-STD-020 MSL Level 1 with a maximum peak temperature of 260 °C. Its matte tin-plated terminals comply with JESD22-B102 for solderability and JESD201 Class 2 for whisker resistance. The TA6F22AHM3/6B has been validated for single-pass reflow profiles used in automotive and industrial manufacturing, with no moisture sensitivity concerns.
Does TA6F22AHM3/6B support bidirectional transient suppression?
No, the TA6F22AHM3/6B is strictly unidirectional, as confirmed in the Vishay datasheet under FEATURES ("Uni-directional only") and ELECTRICAL CHARACTERISTICS tables. It conducts only when the cathode is more positive than the anode beyond VBR. For bidirectional protection, a separate device such as the TA6F22CA or dual-diode array would be required. The TA6F22AHM3/6B must be oriented correctly on PCB with cathode band aligned to ground reference.
What is the maximum clamping voltage of TA6F22AHM3/6B under standard test conditions?
The TA6F22AHM3/6B clamps to a maximum of 30.6 V at 19.6 A peak pulse current using the industry-standard 10/1000 μs waveform. This value is specified in the ELECTRICAL CHARACTERISTICS table and represents worst-case voltage seen by protected circuitry during surge events. The TA6F22AHM3/6B achieves this performance while maintaining low leakage (<1 μA at 18.8 V, TJ = 150 °C) and stable operation up to +185 °C junction temperature.
How does the DO-221AC (SlimSMA) package of TA6F22AHM3/6B compare to standard SMA?
The DO-221AC (SlimSMA) package of TA6F22AHM3/6B measures 2.70 × 1.20 mm with 0.95 mm typical height-significantly lower than standard SMA (DO-214AC), which is ~2.3 mm tall. This reduced profile allows denser routing and eliminates interference with adjacent components or shields. The TA6F22AHM3/6B retains full electrical ratings despite the smaller form factor and is optimized for automated pick-and-place with tight coplanarity control.
TA6F22AHM3/6B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 18.8V
- Voltage - Breakdown (Min):
- 20.9V
- Voltage - Clamping (Max) @ Ipp:
- 30.6V
- Current - Peak Pulse (10/1000µs):
- 19.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F22AHM3/6B FAQ
1.How can I place an order for TA6F22AHM3/6B through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F22AHM3/6B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F22AHM3/6B reliable?
The price and inventory of TA6F22AHM3/6B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F22AHM3/6B is usually 5 days.
3.What payment methods are accepted for TA6F22AHM3/6B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F22AHM3/6B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F22AHM3/6B?
TA6F22AHM3/6B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F22AHM3/6B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F22AHM3/6B?
For technical support, including TA6F22AHM3/6B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F22AHM3/6B requirements.
6.How does Aetrix verify that TA6F22AHM3/6B is sourced from the original manufacturer or authorized distributors?
All TA6F22AHM3/6B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F22AHM3/6B meets industry standards.
7.What is the process for return or replacement of TA6F22AHM3/6B?
All TA6F22AHM3/6B units undergo pre-shipment inspection (PSI). If there is an issue with TA6F22AHM3/6B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F22AHM3/6B part is unused and in its original packaging.
Return procedure for TA6F22AHM3/6B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F22AHM3/6B Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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