Vishay General Semiconductor - Diodes Division TA6F30AHM3_A/H
- Part No.:
- TA6F30AHM3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F30AHM3_A/H.pdf
- Description:
- TVS DIODE 25.6VWM 41.4VC DO221AC
- Quantity:
- Payment:

- Shipping:

Inventory:12,680
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Product details
Overview
TA6F30AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, rated for 30 V breakdown voltage (VBR = 28.5–31.5 V at 1 mA), 600 W peak pulse power (10/1000 µs), and 14.5 V clamping voltage (VC) at 41.4 A peak surge current - designed for automotive-grade ESD and load-dump protection of sensor signal lines and MOSFET gates.
For engineers reviewing the TA6F30AHM3_A/H datasheet, TA6F30AHM3_A/H pinout, TA6F30AHM3_A/H application, or TA6F30AHM3_A/H equivalent, this device delivers AEC-Q101 qualification, 30 kV IEC 61000-4-2 contact discharge immunity, TJ = 185 °C operation, MSL Level 1 reflow compatibility, and halogen-free RoHS compliance - critical for high-reliability automotive electronics design and production validation.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repetitive transients. Its unidirectional configuration provides low-leakage reverse blocking (IR ≤ 1.0 µA at VWM = 25.6 V) and precise breakdown threshold control (αT = 0.088 %/°C).
The SlimSMA (DO-221AC) package enables automated placement with 0.95 mm typical height and meets UL 94 V-0 flammability. Thermal performance is characterized by RθJA = 120–150 °C/W (FR4, minimum pad) and RθJM = 12–15 °C/W, supporting sustained 8 W power dissipation at TM = 65 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 28.5 / 30.0 / 31.5 V at IT = 1 mA - defines precise overvoltage triggering threshold for reliable circuit protection |
| VWM | 25.6 V - maximum continuous reverse working voltage before leakage exceeds 1.0 µA |
| VC @ IPPM | 14.5 V at 41.4 A (10/1000 µs) - clamping voltage limiting downstream component stress during surge events |
| PPPM | 600 W (10/1000 µs) - peak transient energy absorption capability without failure |
| TJ max | +185 °C - enables operation in under-hood automotive environments and high-power density PCB layouts |
| ESD Rating | ±30 kV per IEC 61000-4-2 (contact & air) - eliminates need for external ESD staging in sensor interface designs |
| AEC-Q101 | Qualified - fulfills automotive reliability requirements for temperature cycling, HTRB, and mechanical shock |
Pinout & Package
Package: SlimSMA (DO-221AC), surface-mount, unidirectional configuration with cathode band marking. Dimensions: 4.15–4.35 mm length × 2.50–2.70 mm width × 0.95 mm typical height. Matte tin-plated terminals, J-STD-002 solderable, JESD22-B102 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or common return path; establishes forward conduction direction during clamping |
| Cathode | High-side transient input terminal | Connected to protected line (e.g., sensor output); absorbs positive transients via avalanche breakdown |
Key Features
| Feature | Design Value |
|---|---|
| Very low profile (0.95 mm) | Enables placement in space-constrained automotive modules (e.g., radar sensors, camera ECUs) without height interference |
| Junction passivation optimized design | Ensures stable VBR and low leakage over 15+ year automotive service life under thermal cycling and humidity |
| AEC-Q101 qualified | Validates robustness against accelerated stress tests including HTGB, H3TRB, and temperature cycling (−40 °C to +185 °C) |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow without moisture-induced cracking or delamination |
| Halogen-free & RoHS-compliant | Meets global environmental regulations and OEM material declarations (e.g., IMDS, ELV) |
Applications
| Automotive Sensor Protection | Power MOSFET Gate Protection |
|---|---|
|
Use Scenario: Protecting LIN/CAN bus-connected temperature, pressure, and position sensors from inductive switching spikes and ESD in engine control units. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and microcontroller input to clamp transients before they reach analog front-end or digital receiver. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V MCU I/O pins while maintaining signal integrity due to low capacitance (<100 pF) and fast response (<1 ns). |
Use Scenario: Safeguarding gate-source terminals of N-channel power MOSFETs used in automotive DC-DC converters and motor drivers. IC Role / Device Role / Timing Role: TVS connected directly across MOSFET gate and source to suppress Miller-induced voltage overshoot and gate oxide stress during fast switching. Use Value: Extends MOSFET lifetime by limiting VGS to <15 V during 600 W surges, avoiding gate rupture and ensuring consistent RDS(on) stability over temperature. |
| Infotainment System USB Lines | Body Control Module Signal Inputs |
|
Use Scenario: ESD hardening of USB 2.0 D+/D− lines in head unit and telematics control units exposed to user-accessible ports. IC Role / Device Role / Timing Role: Dual-line TVS array (using two TA6F30AHM3_A/H devices) placed at connector entry point to shunt ±30 kV contact discharge. Use Value: Maintains USB signal integrity (≤0.5 pF added capacitance per line) while meeting IEC 61000-4-2 Level 4 without degrading eye diagram or jitter budget. |
Use Scenario: Transient suppression on wake-up inputs, door lock actuator signals, and ambient light sensor feeds in body control modules. IC Role / Device Role / Timing Role: Discrete TVS installed at PCB edge connectors to absorb load-dump pulses (ISO 7637-2 Pulse 5a) and relay coil flyback energy. Use Value: Enables single-device protection for 12 V nominal systems with 25.6 V stand-off and 14.5 V clamping - eliminating need for Zener + series resistor networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ30A | Same VBR range (28.5–31.5 V), but lower PPPM = 400 W; RθJA = 160 °C/W; not AEC-Q101 qualified | Limited to industrial/commercial automotive peripherals where full AEC-Q101 validation is not required | Select SMAJ30A only when cost sensitivity outweighs long-term reliability needs and thermal derating margin is sufficient |
| TPSMF30A | Identical PPPM = 600 W and AEC-Q101 qualification, but SOD-123FL package (higher RθJA = 180 °C/W, no MSL Level 1 rating) | Suitable for non-reflow-critical board areas or manual assembly; less suitable for high-density automated SMT lines | Choose TPSMF30A if SlimSMA footprint is unavailable, but verify thermal margin and reflow profile compatibility |
Compared with SMAJ30A and TPSMF30A, TA6F30AHM3_A/H uniquely combines AEC-Q101 qualification, MSL Level 1 reflow support, 0.95 mm profile, and 120 °C/W thermal resistance - making it the optimal choice for high-volume automotive SMT production requiring zero rework risk and extended field life.
Availability
TA6F30AHM3_A/H is available at Aetrix Electronics and suitable for automotive sensor protection, power MOSFET gate safeguarding, and infotainment system ESD hardening requiring stable component supply across Tier 1 production ramps and long-lifecycle programs.
Supply support for TA6F30AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.
The TA6F series belongs to Vishay's PAR® family of high-temperature TVS diodes, engineered specifically for under-hood automotive applications demanding 185 °C junction operation and AEC-Q101 compliance.
FAQ
What is the exact breakdown voltage tolerance for TA6F30AHM3_A/H?
The TA6F30AHM3_A/H has a guaranteed breakdown voltage range of 28.5 V to 31.5 V at test current IT = 1.0 mA, with nominal VBR = 30.0 V. This ±5% tolerance ensures predictable clamping onset across production lots and temperature extremes up to +185 °C junction temperature.
Does TA6F30AHM3_A/H support lead-free reflow soldering?
Yes, TA6F30AHM3_A/H is rated MSL Level 1 per J-STD-020 with a maximum peak reflow temperature of 260 °C, fully compatible with standard lead-free (SnAgCu) soldering profiles. Its matte tin-plated terminals meet J-STD-002 and JESD22-B102 solderability requirements.
How does TA6F30AHM3_A/H compare to bidirectional TVS diodes in automotive use?
TA6F30AHM3_A/H is unidirectional and optimized for DC-biased lines like sensor outputs and MOSFET gates, offering lower leakage (<1.0 µA at 25.6 V) and tighter VBR control than bidirectional equivalents. It is not intended for AC-coupled or floating signal paths where symmetrical clamping is required.
Is TA6F30AHM3_A/H suitable for ISO 7637-2 Pulse 5a load-dump protection?
No - TA6F30AHM3_A/H is rated for 600 W (10/1000 µs), insufficient for ISO 7637-2 Pulse 5a (≥1000 W). It is appropriate for lower-energy transients such as ISO 7637-2 Pulses 1, 2a, 2b, 3a, and 3b, and ESD per IEC 61000-4-2, but not full load-dump suppression.
What is the thermal resistance junction-to-mount (RθJM) for TA6F30AHM3_A/H?
The TA6F30AHM3_A/H has a typical RθJM of 12 °C/W and maximum of 15 °C/W, measured per JEDEC 51-14 using TDIM methodology. This enables efficient heat transfer to copper pads or thermal vias, supporting 8 W continuous power dissipation at TM = 65 °C with proper PCB layout.
TA6F30AHM3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- *
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 25.6V
- Voltage - Breakdown (Min):
- 28.5V
- Voltage - Clamping (Max) @ Ipp:
- 41.4V
- Current - Peak Pulse (10/1000µs):
- 14.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F30AHM3_A/H FAQ
1.How can I place an order for TA6F30AHM3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F30AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F30AHM3_A/H reliable?
The price and inventory of TA6F30AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F30AHM3_A/H is usually 5 days.
3.What payment methods are accepted for TA6F30AHM3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F30AHM3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F30AHM3_A/H?
TA6F30AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F30AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F30AHM3_A/H?
For technical support, including TA6F30AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F30AHM3_A/H requirements.
6.How does Aetrix verify that TA6F30AHM3_A/H is sourced from the original manufacturer or authorized distributors?
All TA6F30AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F30AHM3_A/H meets industry standards.
7.What is the process for return or replacement of TA6F30AHM3_A/H?
All TA6F30AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with TA6F30AHM3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F30AHM3_A/H part is unused and in its original packaging.
Return procedure for TA6F30AHM3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F30AHM3_A/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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