Vishay General Semiconductor - Diodes Division TA6F33AHM3_A/I
- Part No.:
- TA6F33AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F33AHM3_A/I.pdf
- Description:
- TVS DIODE 28.2VWM 45.7VC DO221AC
- Quantity:
- Payment:

- Shipping:

Inventory:9,491
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Product details
Overview
TA6F33AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, featuring 33.0 V breakdown voltage (VBR), 28.2 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification for automotive-grade reliability.
For engineers reviewing the TA6F33AHM3_A/I datasheet, TA6F33AHM3_A/I pinout, TA6F33AHM3_A/I application, or TA6F33AHM3_A/I equivalent, this device serves as a high-temperature-stable clamping protector for automotive sensor signal lines, MOSFET gate drivers, and IC power rails where ESD immunity up to 30 kV (IEC 61000-4-2) and TJ = 185 °C operation are required.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for stable clamping under repetitive transients. Its unidirectional polarity and low-profile SlimSMA package enable automated placement on space-constrained PCBs while maintaining robust thermal performance (RθJA ≤ 150 °C/W).
The device delivers 13.1 V clamping voltage (VC) at 45.7 A peak pulse current (IPPM) under 10/1000 μs waveform, with <1.0 μA reverse leakage at VWM and temperature coefficient of VBR = +0.089 %/°C - enabling predictable voltage threshold behavior across -65 °C to +185 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 31.4 / 33.0 / 34.7 V - ensures reliable triggering above system nominal voltage while accommodating manufacturing tolerance and temperature drift |
| VWM | 28.2 V - maximum continuous reverse working voltage before significant leakage begins; compatible with 24 V automotive supply rails |
| IPPM (10/1000 μs) | 45.7 A - peak surge current capability defining transient energy absorption limit without failure |
| VC @ IPPM | 13.1 V - clamped voltage seen by protected circuit during worst-case surge; limits stress on downstream ICs |
| PPPM | 600 W - peak pulse power rating confirming suitability for ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 4 surges |
| TJ max | +185 °C - enables operation in under-hood automotive environments and high-power industrial enclosures without derating |
| ESD Rating | ±30 kV contact/air (IEC 61000-4-2) - eliminates need for additional discrete ESD protection on sensor interfaces |
Pinout & Package
SlimSMA (DO-221AC) package: ultra-low profile (0.95 mm typical height), halogen-free, RoHS-compliant, MSL Level 1 (260 °C reflow), matte tin-plated terminals, cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during clamping | Connected to protected line (e.g., sensor output); conducts surge current toward ground when VBR exceeded |
| Cathode | Current exit terminal during clamping | Connected to ground reference; forms low-impedance path to shunt transient energy away from sensitive nodes |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional clamping architecture | Protects DC-biased lines (e.g., CAN, LIN, sensor analog outputs) without affecting normal forward conduction |
| AEC-Q101 qualification | Validated for automotive applications including engine control units, ADAS sensors, and body electronics |
| Junction passivation optimized design | Ensures long-term stability of VBR and leakage under thermal cycling and humidity exposure |
| 185 °C maximum junction temperature | Supports placement near heat sources (e.g., power converters) without thermal derating penalties |
| MSL Level 1 rating | Enables standard SMT reflow without baking or special handling, reducing manufacturing cost and risk |
Applications
| Automotive Sensor Protection | 24 V Power Rail Clamping |
|---|---|
|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine bay modules exposed to load dump and inductive switching noise. IC Role / Device Role / Timing Role: TVS diode placed between sensor output and ECU input to clamp transients before they reach ADC front-end or op-amp buffers. Use Value: Maintains signal integrity with <1.0 μA leakage at 28.2 V, preventing offset errors while surviving 45.7 A surges per ISO 7637-2 Pulse 5a. |
Use Scenario: Safeguarding 24 V supply inputs to infotainment head units, telematics control units, and lighting drivers against battery disconnection spikes. IC Role / Device Role / Timing Role: Unidirectional TVS connected between 24 V rail and chassis ground to absorb energy from load-dump events (up to 600 W). Use Value: Clamps to 13.1 V during surge, limiting downstream voltage stress below 16 V absolute maximum ratings of most 24 V-rated ICs. |
| MOSFET Gate Driver Protection | Industrial CAN Bus Interface |
|
Use Scenario: Shielding high-side/low-side gate drivers in motor control inverters from Miller-induced voltage spikes during fast switching transitions. IC Role / Device Role / Timing Role: TVS placed across gate-source terminals to clamp dv/dt-induced overshoot and prevent unintended turn-on or oxide damage. Use Value: 0.089 %/°C VBR tempco ensures consistent clamping threshold across -40 °C to +125 °C ambient, critical for gate drive reliability. |
Use Scenario: Adding secondary surge protection on CAN_H/CAN_L lines of industrial PLCs and gateway modules operating in electrically noisy factory environments. IC Role / Device Role / Timing Role: Unidirectional TVS on each CAN line referenced to ground, supplementing integrated transceiver ESD protection. Use Value: Withstands 30 kV ESD per IEC 61000-4-2 and clamps 10/1000 μs surges to <14 V, preserving CAN physical layer compliance (ISO 11898-2). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A | Same VWM/VBR range but lower PPPM (400 W), higher VC (53.3 V), and no AEC-Q101 qualification | Limited to commercial/industrial use; not suitable for automotive under-hood deployment | Select SMAJ33A only if cost sensitivity outweighs automotive qualification and 600 W surge margin requirements |
| SMCJ33A | Higher PPPM (1500 W), larger DO-214AB package (2.5 mm height), same VBR/VC specs, AEC-Q101 qualified | Requires more PCB area and may not fit ultra-thin modules; better for high-energy surge zones like power inputs | Choose SMCJ33A when surge threat level exceeds 600 W or when thermal dissipation via larger pad layout is available |
Compared with SMAJ33A and SMCJ33A, TA6F33AHM3_A/I uniquely balances AEC-Q101 compliance, 600 W surge capacity, and ultra-low 0.95 mm profile - making it optimal for space-constrained automotive signal-line protection where both reliability and board real estate are critical.
Availability
TA6F33AHM3_A/I is available at Aetrix Electronics and suitable for automotive sensor interface protection, 24 V power rail clamping, and industrial CAN bus hardening requiring stable component supply across extended temperature ranges and high-reliability production cycles.
Supply support for TA6F33AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability, automotive-qualified components.
The TA6F series belongs to Vishay's PAR® family of surface-mount TVS diodes, engineered specifically for automotive and industrial applications demanding AEC-Q101 qualification, high-temperature operation, and precise clamping performance in minimal footprint.
FAQ
What is the breakdown voltage tolerance of TA6F33AHM3_A/I?
The TA6F33AHM3_A/I has a specified breakdown voltage (VBR) range of 31.4 V (min) to 34.7 V (max) at 1.0 mA test current, with a typical value of 33.0 V. This ±4.7% tolerance accounts for process variation and ensures reliable triggering above 28.2 V stand-off voltage while maintaining compatibility with 24 V system margins.
Is TA6F33AHM3_A/I suitable for bidirectional transient protection?
No, TA6F33AHM3_A/I is a unidirectional TVS diode and must be used only in DC-biased circuits where reverse polarity is not expected. For bidirectional protection (e.g., AC lines or differential buses), a dedicated bidirectional device such as TA6F33CA is required - TA6F33AHM3_A/I lacks symmetrical clamping capability.
Does TA6F33AHM3_A/I require derating at elevated ambient temperatures?
Yes, TA6F33AHM3_A/I power dissipation must be derated above 25 °C ambient. At TA = 65 °C, its rated power drops to 8 W; full derating follows JEDEC 51-2A curves. The device's 185 °C maximum junction temperature allows operation up to 150 °C ambient when mounted on minimum recommended pads, provided thermal resistance is managed.
What does the "HM3_A/I" suffix indicate in TA6F33AHM3_A/I?
The "HM3" denotes the SlimSMA (DO-221AC) package with halogen-free, RoHS-compliant molding compound; "A" is the revision code; "I" specifies 13-inch tape-and-reel packaging with 14,000 units per reel - distinct from "H" (7-inch reel, 3,500 units). This suffix confirms AEC-Q101 qualification and MSL Level 1 moisture sensitivity.
How does TA6F33AHM3_A/I perform under repeated surge stress?
TA6F33AHM3_A/I is characterized for non-repetitive pulses per Figure 3 of its datasheet (Document 89939), with validated clamping stability over 1,000+ surges at rated IPPM. Its junction passivation and 185 °C TJ rating ensure minimal parameter shift after thermal cycling, supporting long-term reliability in automotive applications with frequent transient exposure.
TA6F33AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 13.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F33AHM3_A/I FAQ
1.How can I place an order for TA6F33AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F33AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F33AHM3_A/I reliable?
The price and inventory of TA6F33AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F33AHM3_A/I is usually 5 days.
3.What payment methods are accepted for TA6F33AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F33AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F33AHM3_A/I?
TA6F33AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F33AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F33AHM3_A/I?
For technical support, including TA6F33AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F33AHM3_A/I requirements.
6.How does Aetrix verify that TA6F33AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All TA6F33AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F33AHM3_A/I meets industry standards.
7.What is the process for return or replacement of TA6F33AHM3_A/I?
All TA6F33AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TA6F33AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F33AHM3_A/I part is unused and in its original packaging.
Return procedure for TA6F33AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F33AHM3_A/I Tags

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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