My Inquiry
My Account
Vishay General Semiconductor - Diodes Division TA6F51AHM3_A/H
- Part No.:
- TA6F51AHM3_A/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F51AHM3_A/H.pdf
- Description:
- TVS DIODE 43.6VWM 70.1VC DO221AC
- Quantity:
- Payment:
- Shipping:
Inventory:4,032
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TA6F51AHM3_A/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, rated for 51 V breakdown voltage (VBR = 48.5–53.6 V at IT = 1.0 mA), 600 W peak pulse power (10/1000 μs), and 185 °C maximum junction temperature - designed for automotive-grade ESD and surge protection on signal lines and MOSFET gates.
For engineers reviewing the TA6F51AHM3_A/H datasheet, TA6F51AHM3_A/H pinout, TA6F51AHM3_A/H application, or TA6F51AHM3_A/H equivalent, this device is selected for high-reliability automotive sensor interfaces, AEC-Q101-compliant board-level transient suppression, and space-constrained layouts requiring <0.95 mm profile and MSL Level 1 reflow compatibility.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver stable clamping under repetitive transients while maintaining low leakage (<1.0 μA at VWM = 43.6 V) and tight VBR tolerance (±5%). Its thermal resistance RθJA is 120–150 °C/W on FR4 PCB with minimum pad layout, enabling operation up to TJ = 185 °C without derating loss in automotive under-hood environments.
The device features unidirectional polarity with cathode band marking, meets IEC 61000-4-2 ±30 kV contact/air discharge, and is qualified per AEC-Q101 - confirming suitability for permanent installation in automotive ECUs, ADAS sensor modules, and infotainment power rails where failure modes must be mitigated without adding series impedance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 48.5 / 51.0 / 53.6 V at IT = 1.0 mA - defines precise clamping onset threshold for overvoltage events |
| VWM | 43.6 V - maximum continuous reverse working voltage before leakage exceeds 1.0 μA |
| VC @ IPPM | 70.1 V at 10.0 A (10/1000 μs) - actual clamped voltage seen by protected IC during surge |
| PPPM | 600 W (10/1000 μs) - energy-handling capacity sufficient for ISO 7637-2 Pulse 1/2a/3a and IEC 61000-4-5 surges |
| TJ max | 185 °C - enables placement near heat sources (e.g., power converters) without thermal shutdown |
| ESD rating | ±30 kV per IEC 61000-4-2 - protects against human-body-model discharges in assembly and field use |
| Package | SlimSMA (DO-221AC), 0.163–0.171 in length, 0.098–0.106 in width, 0.030–0.047 in height - ultra-low-profile SMT fit for dense automotive PCBs |
Pinout & Package
SlimSMA (DO-221AC) package with two terminals: anode and cathode. Cathode identified by color band on body end. Matte tin-plated leads compliant with J-STD-002 and JESD22-B102 solderability standards; passes JESD201 Class 2 whisker test.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to protected line's ground reference | Completes conduction path during reverse transient; ties to system GND or low-impedance return plane |
| Cathode | Current exit terminal in forward bias; marked with color band | Connected to protected signal/power line; clamps voltage to VC when transient exceeds VWM |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile | 0.95 mm typical height - fits beneath low-clearance shields and connectors in ADAS camera modules |
| AEC-Q101 qualification | Validated for automotive temperature cycling, mechanical shock, and humidity testing - supports PPAP documentation |
| Junction passivation | Optimized anisotropic rectifier structure - ensures stable VBR drift <0.093 %/°C across full operating range |
| MSL Level 1 rating | Reflow-compatible up to 260 °C peak - eliminates dry-pack requirements and floor-life constraints |
| Halogen-free & RoHS | HM3 suffix denotes compliance with JEDEC J-STD-609A Class 1 and EU RoHS Directive 2011/65/EU |
Applications
| Automotive Sensor Signal Protection | Infotainment Power Rail Clamping |
|---|---|
|
Use Scenario: Protecting LIN/CAN transceiver I/O pins and analog sensor outputs (e.g., pressure, temperature) from load-dump and inductive switching transients in engine control units. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp fast-rising transients before they reach sensitive input stages. Use Value: Limits voltage excursion to ≤70.1 V during 10 A surge, preserving signal integrity and preventing latch-up in 5 V/3.3 V interface ICs. |
Use Scenario: Suppressing 12 V battery rail transients caused by alternator load dump or relay bounce in head unit power supplies. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main 12 V input, positioned upstream of DC/DC converters and LDOs. Use Value: Absorbs 600 W pulses without degradation, maintaining regulated output stability and avoiding brownout resets. |
| ADAS Camera Module ESD Guard | Electric Power Steering (EPS) Gate Drive Protection |
|
Use Scenario: Shielding high-speed image sensor data lines (e.g., MIPI CSI-2) from ESD events during vehicle assembly and service. IC Role / Device Role / Timing Role: Low-capacitance TVS placed directly at connector entry point to shunt ESD current before reaching serializer IC inputs. Use Value: Withstands ±30 kV contact discharge while adding <1 pF parasitic capacitance - no signal integrity impact on 1.5 Gbps video links. |
Use Scenario: Protecting high-side/low-side MOSFET gate drivers in EPS motor control H-bridges from voltage spikes induced by PWM switching and motor back-EMF. IC Role / Device Role / Timing Role: Clamp diode tied between gate driver output and source, limiting gate-source voltage to safe levels. Use Value: Fast response (<1 ns) and 70.1 V clamping prevent gate oxide breakdown in 60 V-rated MOSFETs during 100 ns transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A | Same VBR range (48.5–53.6 V), but lower PPPM = 400 W; larger SMA package (1.5 mm height); not AEC-Q101 qualified | Limited to industrial or consumer-grade boards lacking automotive qualification requirements | Select SMAJ51A only if cost sensitivity outweighs AEC-Q101 compliance and space constraints allow taller profile. |
| TPSMD51A | Identical PPPM = 600 W and AEC-Q101 rating, but DO-214AB (SMC) package (2.4 mm height); higher RθJA = 180 °C/W | Better thermal dissipation on large copper areas, but incompatible with ultra-thin modules like radar sensors | Choose TPSMD51A when board layout permits greater Z-height and thermal management prioritizes junction-to-ambient conduction over footprint density. |
Compared with SMAJ51A and TPSMD51A, TA6F51AHM3_A/H uniquely combines AEC-Q101 qualification, 0.95 mm height, and 600 W surge capability - making it the only option for space-limited automotive modules requiring both reliability and miniaturization.
Availability
TA6F51AHM3_A/H is available at Aetrix Electronics and suitable for automotive sensor protection, infotainment power rail clamping, and ADAS camera ESD guard applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for TA6F51AHM3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, automotive qualification, and high-temperature performance.
The TA6F series belongs to Vishay's PAR® family of surface-mount TVS diodes engineered specifically for AEC-Q101-compliant automotive electronics - targeting robust transient suppression in engine control, safety systems, and electrified powertrain applications.
FAQ
What is the clamping voltage of TA6F51AHM3_A/H at its rated peak pulse current?
The TA6F51AHM3_A/H has a maximum clamping voltage VC of 70.1 V at IPPM = 10.0 A with a 10/1000 μs waveform. This value is measured under standardized surge conditions and represents the highest voltage the protected circuit will experience during a full-rated transient event. The TA6F51AHM3_A/H maintains this clamping performance across its full operating temperature range due to its low VBR temperature coefficient of 0.093 %/°C.
Is TA6F51AHM3_A/H qualified for automotive applications?
Yes, TA6F51AHM3_A/H is fully AEC-Q101 qualified, having passed stress tests including temperature cycling, mechanical shock, humidity bias, and high-temperature operating life. It is rated for junction temperatures up to 185 °C and meets MSL Level 1 reflow requirements - making it suitable for under-hood and safety-critical automotive systems such as ABS, EPS, and ADAS sensor nodes.
What does the "HM3_A/H" suffix indicate in TA6F51AHM3_A/H?
The "HM3" denotes the SlimSMA (DO-221AC) halogen-free, RoHS-compliant package with matte tin plating and JESD201 Class 2 whisker resistance. "A/H" specifies the packaging format: 7-inch plastic tape-and-reel with 3500 units per reel. This ordering code ensures traceable, factory-standard delivery compatible with high-speed SMT placement equipment used in automotive electronics manufacturing.
How does TA6F51AHM3_A/H compare to standard SMA-package TVS diodes in terms of board space?
TA6F51AHM3_A/H occupies ~30% less vertical space than conventional SMA (DO-214AA) TVS diodes, with a maximum height of 0.047 in (1.20 mm) versus 1.5 mm for SMA. Its SlimSMA (DO-221AC) footprint measures 0.163–0.171 in × 0.098–0.106 in, enabling placement beneath low-profile connectors and shielding cans in compact ADAS modules where Z-height is constrained - a key advantage over alternatives like SMAJ51A or P6SMB51A.
Can TA6F51AHM3_A/H be used in bidirectional configurations?
No, TA6F51AHM3_A/H is strictly unidirectional, as confirmed by its polarity marking (cathode band), electrical specifications (VWM, VBR, and VC defined for reverse-biased operation), and absence of symmetrical breakdown characteristics in the datasheet. For bidirectional protection, Vishay offers separate part numbers such as TA6F51CA; using TA6F51AHM3_A/H in bidirectional circuits would leave positive-going transients unprotected.
TA6F51AHM3_A/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 8.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F51AHM3_A/H FAQ
1.How can I place an order for TA6F51AHM3_A/H through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F51AHM3_A/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F51AHM3_A/H reliable?
The price and inventory of TA6F51AHM3_A/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F51AHM3_A/H is usually 5 days.
3.What payment methods are accepted for TA6F51AHM3_A/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F51AHM3_A/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F51AHM3_A/H?
TA6F51AHM3_A/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F51AHM3_A/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F51AHM3_A/H?
For technical support, including TA6F51AHM3_A/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F51AHM3_A/H requirements.
6.How does Aetrix verify that TA6F51AHM3_A/H is sourced from the original manufacturer or authorized distributors?
All TA6F51AHM3_A/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F51AHM3_A/H meets industry standards.
7.What is the process for return or replacement of TA6F51AHM3_A/H?
All TA6F51AHM3_A/H units undergo pre-shipment inspection (PSI). If there is an issue with TA6F51AHM3_A/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F51AHM3_A/H part is unused and in its original packaging.
Return procedure for TA6F51AHM3_A/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F51AHM3_A/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
