Vishay General Semiconductor - Diodes Division TA6F51AHM3_A/I
- Part No.:
- TA6F51AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F51AHM3_A/I.pdf
- Description:
- TVS DIODE 43.6VWM 70.1VC DO221AC
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TA6F51AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, rated for 51 V breakdown voltage (VBR = 48.5–53.6 V at IT = 1.0 mA), 600 W peak pulse power (10/1000 μs), and 185 °C maximum junction temperature - designed for automotive-grade ESD and surge protection on signal lines and MOSFET gates.
For engineers reviewing the TA6F51AHM3_A/I datasheet, TA6F51AHM3_A/I pinout, TA6F51AHM3_A/I application, or TA6F51AHM3_A/I equivalent, this device delivers AEC-Q101 qualification, 30 kV IEC 61000-4-2 ESD immunity, MSL Level 1 moisture sensitivity, and halogen-free RoHS-compliant construction - critical for high-reliability automotive sensor interfaces and power electronics.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping under repetitive transients while maintaining low leakage (<1.0 μA at VWM = 43.6 V) and tight VBR tolerance (±5%). Its thermal resistance RθJA is 120–150 °C/W on FR4 PCB with minimum pad layout, enabling operation up to TJ = 185 °C without derating penalties in engine control modules.
The device features unidirectional polarity with cathode band marking, optimized for clamping inductive switching spikes (e.g., solenoid drivers) and lightning-induced surges on CAN/LIN bus lines. Its 0.95 mm profile supports automated placement in space-constrained automotive ECUs where height clearance is limited.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 48.5 / 51.0 / 53.6 V at IT = 1.0 mA - ensures reliable turn-on before downstream IC damage in 48 V automotive systems |
| VWM | 43.6 V - maximum continuous reverse working voltage compatible with 36–48 V nominal rail systems |
| IPPM (10/1000 μs) | 70.1 A - clamps 600 W surge energy without failure, sufficient for ISO 7637-2 Pulse 1/2a/5a compliance |
| VC @ IPPM | 70.1 V - clamping voltage marginally above VBR, minimizing stress on protected circuitry during surge events |
| TJ max | 185 °C - enables use in under-hood environments without thermal derating in engine control units |
| ESD rating | 30 kV contact/air per IEC 61000-4-2 - protects against human-body-model discharges in assembly and field service |
| Package | SlimSMA (DO-221AC) - 0.95 mm height, 3.12 mm length, MSL Level 1, compatible with standard SMT reflow profiles |
Pinout & Package
SlimSMA (DO-221AC) surface-mount package with cathode band marking; two-terminal unidirectional configuration. Matte tin-plated leads meet J-STD-002 solderability and JESD22-B102 solder wettability standards; HM3 suffix indicates halogen-free, RoHS-compliant, AEC-Q101-qualified construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction; connected to system ground or low-side reference | Provides return path for surge current during clamping; must be routed with low-inductance trace to minimize VL overshoot |
| Cathode | Protected line connection; marked by color band | Connected to sensitive node (e.g., MCU I/O, sensor output); clamps positive transients to VC when voltage exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| High-temperature operation | Rated for continuous operation at TJ = 185 °C - eliminates thermal derating in under-hood automotive modules |
| AEC-Q101 qualification | Validated for automotive reliability including HTOL, TC, UHAST, and ESD stress - required for ASIL-B/C system components |
| Low-profile packaging | 0.95 mm typical height - fits beneath connectors and shields in compact ADAS domain controllers |
| Halogen-free & RoHS | HM3 suffix confirms compliance with JEDEC J-STD-020 MSL Level 1 and material restrictions for global automotive supply chains |
| Optimized clamping ratio | VC/VBR ≈ 1.37 - balances low-leakage standby performance with robust transient suppression capability |
Applications
| Automotive Sensor Protection | CAN/LIN Bus Line Protection |
|---|---|
|
Use Scenario: Protecting analog outputs of pressure, temperature, and position sensors in engine management systems exposed to load-dump and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and ECU input to clamp transients before they reach ADC front-end or op-amp buffers. Use Value: Prevents sensor signal corruption and ADC saturation during 12 V/48 V system switching events, maintaining ASIL-A functional safety integrity. |
Use Scenario: Shielding CAN FD and LIN physical layer transceivers from ESD events and coupled noise in body control modules. IC Role / Device Role / Timing Role: TVS mounted directly at connector interface to shunt fast-rising ESD pulses (<1 ns rise time) before reaching transceiver pins. Use Value: Maintains bus communication integrity during 30 kV contact discharge tests without latch-up or bit errors in automotive networking stacks. |
| MOSFET Gate Protection | Power Supply Rail Clamping |
|
Use Scenario: Safeguarding high-side N-channel MOSFET gates driven by isolated gate drivers in 48 V DC-DC converters. IC Role / Device Role / Timing Role: TVS placed between gate and source to clamp Miller-induced voltage spikes during fast switching transitions. Use Value: Eliminates gate oxide breakdown risk during dV/dt > 50 V/ns events, extending MOSFET lifetime in high-efficiency traction inverters. |
Use Scenario: Suppressing load-dump transients on 12 V/48 V battery rails feeding infotainment head units and ADAS cameras. IC Role / Device Role / Timing Role: TVS installed at power entry point to limit rail voltage excursion to ≤70.1 V during ISO 16750-2 Pulse 5a events. Use Value: Prevents brownout resets and overvoltage damage to PMICs and SoCs without requiring bulky external filters or regulators. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ51A | Same VBR range (48.5–53.6 V), but lower PPPM = 400 W and TJ max = 150 °C; DO-214AC package (1.7 mm height) | Limited to under-dash modules without under-hood thermal exposure; not AEC-Q101 qualified | Select SMAJ51A only for cost-sensitive non-automotive industrial applications where 185 °C operation is unnecessary |
| TPSMD51A | Higher PPPM = 1500 W, same VBR, but larger SMB (DO-214AA) package (2.3 mm height); AEC-Q101 qualified | Better suited for high-energy surge zones (e.g., alternator output), but incompatible with SlimSMA board space constraints | Choose TPSMD51A when system-level surge testing requires >600 W margin and board height allows ≥2.3 mm profile |
Compared with SMAJ51A and TPSMD51A, TA6F51AHM3_A/I uniquely combines AEC-Q101 qualification, 185 °C junction rating, and 0.95 mm SlimSMA footprint - making it the only option for space- and temperature-critical automotive signal-line protection where both reliability and miniaturization are mandatory.
Availability
TA6F51AHM3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, CAN/LIN bus hardening, and MOSFET gate clamping requiring stable component supply across production lifecycles.
Supply support for TA6F51AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The TA6F series belongs to Vishay's PAR® family of high-temperature TVS diodes, engineered specifically for AEC-Q101-compliant transient suppression in next-generation 48 V automotive architectures and electrified powertrain systems.
FAQ
What is the maximum clamping voltage of TA6F51AHM3_A/I at its rated peak pulse current?
The TA6F51AHM3_A/I exhibits a maximum clamping voltage (VC) of 70.1 V when subjected to its rated peak pulse current (IPPM) of 70.1 A under a 10/1000 μs waveform. This value is measured per the test conditions specified in Vishay Document 89939 and ensures predictable overvoltage limiting for protected circuits. The TA6F51AHM3_A/I maintains this clamping performance across its full operating temperature range.
Is TA6F51AHM3_A/I qualified for automotive applications?
Yes, TA6F51AHM3_A/I is AEC-Q101 qualified per Vishay's documentation (Document 89939), covering stress tests including high-temperature operating life, temperature cycling, and ESD. It is explicitly intended for automotive use cases such as sensor interfaces, powertrain control, and body electronics. The TA6F51AHM3_A/I meets MSL Level 1 and operates reliably up to 185 °C junction temperature - key requirements for under-hood deployment.
What does the "HM3_A/I" suffix indicate in TA6F51AHM3_A/I?
The "HM3" denotes Vishay's halogen-free, RoHS-compliant, AEC-Q101-qualified SlimSMA package variant; "A" is the revision code; "I" specifies the 13-inch tape-and-reel delivery format with 14,000 units per reel. This distinguishes TA6F51AHM3_A/I from the "H" variant (7-inch reel, 3,500 units). The TA6F51AHM3_A/I suffix confirms compliance with JEDEC J-STD-020 and JESD22-B102 solderability standards.
How does TA6F51AHM3_A/I compare to standard SMAJ-series TVS diodes?
TA6F51AHM3_A/I offers superior thermal capability (TJ max = 185 °C vs. 150 °C for SMAJ), lower profile (0.95 mm vs. 1.7 mm), and tighter VBR tolerance (±5% vs. ±10%) compared to SMAJ51A. It also features enhanced ESD robustness (30 kV vs. 30 kV contact but only 20 kV air for SMAJ) and AEC-Q101 qualification. The TA6F51AHM3_A/I is purpose-built for modern automotive platforms where size, temperature, and qualification rigor exceed legacy SMAJ requirements.
Can TA6F51AHM3_A/I be used in bidirectional configurations?
No, TA6F51AHM3_A/I is strictly unidirectional, as confirmed by its polarity marking (cathode band) and electrical specifications - including asymmetric VBR/VWM ratings and absence of reverse standoff symmetry. For bidirectional protection, Vishay offers complementary devices like the TA6F51CA series. Using TA6F51AHM3_A/I in reverse-biased configurations will not provide clamping and may lead to premature failure.
TA6F51AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 43.6V
- Voltage - Breakdown (Min):
- 48.5V
- Voltage - Clamping (Max) @ Ipp:
- 70.1V
- Current - Peak Pulse (10/1000µs):
- 8.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F51AHM3_A/I FAQ
1.How can I place an order for TA6F51AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F51AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F51AHM3_A/I reliable?
The price and inventory of TA6F51AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F51AHM3_A/I is usually 5 days.
3.What payment methods are accepted for TA6F51AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F51AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F51AHM3_A/I?
TA6F51AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F51AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F51AHM3_A/I?
For technical support, including TA6F51AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F51AHM3_A/I requirements.
6.How does Aetrix verify that TA6F51AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All TA6F51AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F51AHM3_A/I meets industry standards.
7.What is the process for return or replacement of TA6F51AHM3_A/I?
All TA6F51AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TA6F51AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F51AHM3_A/I part is unused and in its original packaging.
Return procedure for TA6F51AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F51AHM3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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