Vishay General Semiconductor - Diodes Division TA6F7.5AHM3_A/I
- Part No.:
- TA6F7.5AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6F7.5AHM3_A/I.pdf
- Description:
- TVS DIODE 6.4VWM 11.3VC DO221AC
- Quantity:
- Payment:

- Shipping:

Inventory:9,248
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Product details
Overview
TA6F7.5AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, designed for automotive-grade circuit protection. It features a 7.5 V nominal breakdown voltage (VBR), 600 W peak pulse power (10/1000 μs), and AEC-Q101 qualification - enabling robust clamping of inductive switching transients on sensor signal lines and MOSFET gate drivers.
For engineers reviewing the TA6F7.5AHM3_A/I datasheet, TA6F7.5AHM3_A/I pinout, TA6F7.5AHM3_A/I application, or TA6F7.5AHM3_A/I equivalent, this device delivers verified 11.3 V clamping voltage at 53.1 A peak pulse current, 0.052 %/°C temperature coefficient of VBR, and 185 °C maximum junction temperature - critical for high-reliability automotive electronics under thermal stress.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable breakdown behavior and low leakage (<250 μA at VWM = 6.4 V, TJ = 150 °C). Its unidirectional polarity and cathode band marking align with standard PCB layout conventions for reverse-biased transient suppression.
The SlimSMA package enables automated placement with 0.95 mm typical height and meets MSL Level 1 per J-STD-020 (260 °C peak reflow). Thermal resistance is 120–150 °C/W (junction-to-ambient) on FR4, supporting operation up to 185 °C junction temperature without derating loss in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 7.13 / 7.50 / 7.88 V at 10 mA - defines precise overvoltage triggering threshold for reliable system-level surge response |
| VWM | 6.40 V - maximum continuous working voltage before leakage rises; ensures no false triggering during normal 5 V or 6.4 V rail operation |
| VC @ IPPM | 11.3 V at 53.1 A - clamping voltage under 600 W 10/1000 μs surge; limits downstream IC stress to safe levels |
| PPPM | 600 W (10/1000 μs) - standardized surge energy handling capacity validated per IEC 61000-4-5 |
| TJ max | 185 °C - enables use in under-hood automotive environments without thermal shutdown or parameter drift |
| ESD Rating | 30 kV contact/air per IEC 61000-4-2 - provides system-level ESD immunity without external shielding |
| AEC-Q101 | Qualified - confirms reliability for automotive applications including engine control, ADAS sensors, and body electronics |
Pinout & Package
Package: SlimSMA (DO-221AC), surface-mount, halogen-free, RoHS-compliant, matte tin-plated terminals. Cathode identified by color band. Height: 0.95 mm typical.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-impedance return path; forms clamping loop with cathode during transient events |
| Cathode | High-side connection point | Connected to protected line (e.g., sensor output); conducts surge current to ground when VAK exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Reduces parameter drift over time and temperature; maintains VBR stability across 1000+ hours at 150 °C |
| Very low profile (0.95 mm height) | Enables routing under connectors or in space-constrained modules such as radar front-ends and camera ECUs |
| MSL Level 1 rating | Allows single-pass reflow at 260 °C peak without moisture-induced popcorn failure or delamination |
| 185 °C junction capability | Supports direct mounting near heat sources (e.g., power converters) without thermal derating penalties |
| Halogen-free & RoHS-compliant | Fulfills automotive OEM material compliance requirements (e.g., GMW3172, Ford WSS-M99P9999-A1) |
Applications
| Automotive Sensor Protection | Power MOSFET Gate Clamp |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine control units exposed to load dump and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS placed between sensor output and microcontroller ADC input to clamp transients below absolute maximum ratings. Use Value: Prevents ADC saturation and latch-up during 600 W surges while maintaining <250 μA leakage at 6.4 V to avoid signal offset errors. |
Use Scenario: Clamping gate-source voltage spikes on N-channel power MOSFETs driving solenoids, fuel injectors, or relays in 12 V automotive systems. IC Role / Device Role / Timing Role: TVS connected directly across MOSFET gate and source to limit VGS to ≤11.3 V during fast-switching turn-off events. Use Value: Eliminates risk of gate oxide rupture and ensures MOSFET reliability under repetitive 53.1 A surge conditions without adding RC snubbers. |
| Infotainment Interface Lines | Body Control Module Signal Inputs |
Use Scenario: Shielding LIN bus or CAN FD physical layer inputs in head unit and display modules from ESD and cable discharge events. IC Role / Device Role / Timing Role: TVS placed on each LIN data line (e.g., LIN_TX/RX) with minimal capacitance impact due to DO-221AC geometry. Use Value: Provides 30 kV IEC 61000-4-2 ESD protection while maintaining signal integrity - no measurable rise-time degradation on 20 kbps LIN signals. |
Use Scenario: Protecting digital inputs (e.g., door lock switch, window lift feedback) in BCMs against battery reversal and jump-start transients. IC Role / Device Role / Timing Role: Unidirectional TVS installed on each input line referenced to chassis ground to absorb negative-going pulses during reverse polarity events. Use Value: Withstands -65 °C to +185 °C operating range and maintains clamping performance after 1000 thermal cycles (−40/+125 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ7.5A | Same VBR (7.13–7.88 V), but lower PPPM = 400 W; RθJA = 175 °C/W vs. 120–150 °C/W | Limited to lower-energy transients; not qualified to AEC-Q101 | Select SMAJ7.5A only for non-automotive industrial applications where 400 W surge margin suffices and thermal budget allows higher junction rise. |
| TPSMF7.5A | Same SlimSMA package and AEC-Q101 qualification; VC = 12.5 V @ 48.2 A (vs. 11.3 V @ 53.1 A) | Higher clamping voltage reduces protection margin for 5 V logic interfaces | Choose TPSMF7.5A if supply chain prioritizes TI's long-term availability over tighter clamping; verify 12.5 V VC compatibility with downstream IC abs max ratings. |
Compared with SMAJ7.5A and TPSMF7.5A, the TA6F7.5AHM3_A/I offers superior 600 W surge handling, lower clamping voltage, and better thermal resistance - making it optimal for high-reliability automotive signal-line protection where both energy absorption and voltage limiting are critical.
Availability
TA6F7.5AHM3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, power MOSFET gate clamping, and infotainment interface line protection requiring stable component supply across production lifecycles.
Supply support for TA6F7.5AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for automotive, industrial, and computing markets.
The TA6F7.5AHM3_A/I belongs to Vishay's PAR® TVS family, engineered specifically for AEC-Q101-compliant transient suppression in harsh automotive environments - emphasizing thermal stability, low-profile packaging, and repeatable clamping performance.
FAQ
What is the clamping voltage of the TA6F7.5AHM3_A/I at its rated peak pulse current?
The TA6F7.5AHM3_A/I has a maximum clamping voltage (VC) of 11.3 V at 53.1 A peak pulse current (IPPM) under a 10/1000 μs waveform. This value is measured and guaranteed per the Vishay datasheet revision dated 16-Jan-2025, ensuring predictable overvoltage limiting for protected circuits downstream of the TA6F7.5AHM3_A/I.
Is the TA6F7.5AHM3_A/I qualified for automotive applications?
Yes, the TA6F7.5AHM3_A/I is AEC-Q101 qualified, confirming its suitability for automotive electronic systems. This qualification covers stress testing for temperature cycling, humidity bias, mechanical shock, and high-temperature operating life - all validated per the Vishay qualification report referenced in document 89939.
What package type does the TA6F7.5AHM3_A/I use, and what are its key mechanical attributes?
The TA6F7.5AHM3_A/I uses the SlimSMA (DO-221AC) package: surface-mount, 0.95 mm typical height, cathode marked by a visible band, and matte tin-plated terminals compliant with J-STD-002 solderability standards. Its footprint matches JEDEC DO-221AC outlines with defined pad dimensions for optimal thermal and mechanical reliability.
How does the TA6F7.5AHM3_A/I perform under elevated temperature conditions?
The TA6F7.5AHM3_A/I supports continuous operation up to 185 °C junction temperature and exhibits a VBR temperature coefficient of +0.052 %/°C. Its thermal resistance (RθJA) remains within 120–150 °C/W on FR4, enabling stable clamping performance even in under-hood environments without additional heatsinking.
What is the ESD withstand capability of the TA6F7.5AHM3_A/I?
The TA6F7.5AHM3_A/I withstands 30 kV electrostatic discharge per IEC 61000-4-2, tested using both contact and air discharge methods with C = 150 pF and R = 330 Ω. This rating is confirmed in the Vishay datasheet section "Immunity to Static Electrical Discharge" and applies across the full operating temperature range.
TA6F7.5AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6.4V
- Voltage - Breakdown (Min):
- 7.13V
- Voltage - Clamping (Max) @ Ipp:
- 11.3V
- Current - Peak Pulse (10/1000µs):
- 53.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-221AC (SlimSMA)
TA6F7.5AHM3_A/I FAQ
1.How can I place an order for TA6F7.5AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6F7.5AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6F7.5AHM3_A/I reliable?
The price and inventory of TA6F7.5AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6F7.5AHM3_A/I is usually 5 days.
3.What payment methods are accepted for TA6F7.5AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6F7.5AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6F7.5AHM3_A/I?
TA6F7.5AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6F7.5AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6F7.5AHM3_A/I?
For technical support, including TA6F7.5AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6F7.5AHM3_A/I requirements.
6.How does Aetrix verify that TA6F7.5AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All TA6F7.5AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6F7.5AHM3_A/I meets industry standards.
7.What is the process for return or replacement of TA6F7.5AHM3_A/I?
All TA6F7.5AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TA6F7.5AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6F7.5AHM3_A/I part is unused and in its original packaging.
Return procedure for TA6F7.5AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6F7.5AHM3_A/I Tags

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DESD3V3E1BL-7B
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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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