Vishay General Semiconductor - Diodes Division TA6F8.2AHM3_A/I

Overview

TA6F8.2AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SlimSMA (DO-221AC) package, rated for 8.2 V breakdown voltage (V_BR), 7.02 V stand-off voltage (V_WM), and 600 W peak pulse power (10/1000 μs). It delivers 49.6 V clamping voltage at 12.1 A peak pulse current and supports automotive-grade reliability with AEC-Q101 qualification and 185 °C maximum junction temperature.

For engineers reviewing the TA6F8.2AHM3_A/I datasheet, TA6F8.2AHM3_A/I pinout, TA6F8.2AHM3_A/I application, or TA6F8.2AHM3_A/I equivalent, this device is selected for high-reliability transient protection on low-voltage signal lines-especially where space-constrained layouts, ESD robustness (30 kV IEC 61000-4-2), and thermal stability under automotive ambient conditions are critical.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to achieve stable breakdown behavior across temperature and high surge immunity. Its unidirectional configuration enables precise reverse-biased clamping without forward conduction during normal operation, and its TJ = 185 °C rating ensures functionality in under-hood automotive environments.

The SlimSMA (DO-221AC) package provides ultra-low profile (0.95 mm typical height) and meets MSL Level 1 with 260 °C lead-free reflow compatibility. Thermal resistance junction-to-mount (R_θJM) is 12–15 °C/W, enabling effective heat transfer to PCB copper when using minimum recommended pad layout per JEDEC 51-14.

Key Specifications

Pinout & Package

Package: SlimSMA (DO-221AC), surface-mount, unidirectional configuration with cathode indicated by color band. Dimensions: 4.15–4.35 mm length × 2.50–2.70 mm width × 0.95 mm typical height. RoHS-compliant, halogen-free, matte tin-plated terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with SMAJ8.0A and TPSMD8.2A, the TA6F8.2AHM3_A/I uniquely combines AEC-Q101 qualification, 185 °C junction capability, MSL Level 1 reflow support, and sub-1 mm profile-making it the only option meeting full automotive signal-line protection requirements in space-constrained modules.

Availability

TA6F8.2AHM3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, infotainment interface hardening, and ADAS camera power rail stabilization requiring stable component supply across production lifecycles.

Supply support for TA6F8.2AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and protection devices for automotive, industrial, and computing markets.

The TA6F series belongs to Vishay's PAR® family of surface-mount TVS diodes engineered specifically for AEC-Q101-compliant transient suppression in next-generation automotive electronics with stringent thermal and space constraints.

FAQ

What is the clamping voltage of the TA6F8.2AHM3_A/I at its rated peak pulse current?

The TA6F8.2AHM3_A/I has a maximum clamping voltage (V_C) of 49.6 V at 12.1 A peak pulse current (I_PPM) under the standard 10/1000 μs waveform. This value is measured per the test conditions defined in Vishay document 89939 and ensures protected circuits experience limited overvoltage stress during surge events. The TA6F8.2AHM3_A/I maintains this performance across its specified operating temperature range.

Is the TA6F8.2AHM3_A/I qualified for automotive applications?

Yes, the TA6F8.2AHM3_A/I is AEC-Q101 qualified, having passed all required stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT). Its 185 °C maximum junction temperature and MSL Level 1 reflow rating further validate its suitability for under-hood and body-control module applications. The TA6F8.2AHM3_A/I carries full automotive-grade traceability and process control documentation.

What package type does the TA6F8.2AHM3_A/I use, and what are its key mechanical features?

The TA6F8.2AHM3_A/I uses the SlimSMA (DO-221AC) package: a surface-mount outline measuring 4.15–4.35 mm in length, 2.50–2.70 mm in width, and with a typical height of 0.95 mm. It features matte tin-plated terminals compliant with J-STD-002 and JESD22-B102, meets UL 94 V-0 flammability rating, and passes JESD201 Class 2 whisker testing. The TA6F8.2AHM3_A/I's compact size supports high-density automotive PCB layouts.

How does the TA6F8.2AHM3_A/I perform under high-temperature operating conditions?

The TA6F8.2AHM3_A/I is rated for continuous operation up to 185 °C junction temperature, with V_BR exhibiting a temperature coefficient of +0.056 %/°C. Its power derating curve (Fig. 5 in doc 89939) shows linear reduction from 8 W at 65 °C to ~4.5 W at 125 °C ambient on minimum pad layout. The TA6F8.2AHM3_A/I maintains stable clamping and leakage behavior across this range, validated per AEC-Q101 thermal stress protocols.

What ESD protection level does the TA6F8.2AHM3_A/I provide, and how is it tested?

The TA6F8.2AHM3_A/I provides ±30 kV ESD protection per IEC 61000-4-2, verified using both contact and air discharge methods with C = 150 pF and R = 330 Ω. This rating applies across its full operating temperature range and is intrinsic to its junction passivation design-not dependent on external RC networks. The TA6F8.2AHM3_A/I achieves this without compromising clamping speed or leakage, making it suitable for direct placement on high-speed signal lines like USB or CAN.