Vishay General Semiconductor - Diodes Division TA6L36AHM3/H
- Part No.:
- TA6L36AHM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6L36AHM3/H.pdf
- Description:
- 600W,36V 5%, SLIMSMAW PAR
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TA6L36AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SlimSMAW (DO-221AD) package, designed for clamping inductive switching transients and ESD events on automotive sensor signal lines. It features 36 V breakdown voltage (VBR = 34.2–37.8 V at IT = 1.0 mA), 30.8 V stand-off voltage (VWM), 49.9 V maximum clamping voltage (VC) at 12.0 A peak pulse current, and 600 W peak pulse power (10/1000 µs).
For engineers reviewing the TA6L36AHM3/H datasheet, TA6L36AHM3/H pinout, TA6L36AHM3/H application, or TA6L36AHM3/H equivalent, this device is selected for high-reliability automotive electronics requiring AEC-Q101 qualification, 185 °C junction temperature capability, and halogen-free, RoHS-compliant construction in a low-profile SMD package.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver stable clamping performance across -65 °C to +185 °C operating junction temperature. Its unidirectional configuration enables precise reverse-biased protection of DC-powered signal paths without forward conduction interference.
The device is optimized for fast transient suppression with 10/1000 µs waveform compliance, 0.090 %/°C temperature coefficient of VBR, and thermal resistance RθJA ≤ 150 °C/W on FR4 PCB - enabling robust surge handling in space-constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage VBR | 34.2–37.8 V at 1.0 mA test current - defines minimum clamping onset threshold under transient stress |
| Stand-off Voltage VWM | 30.8 V - maximum continuous reverse voltage before leakage exceeds 1.0 µA, ensuring no false triggering |
| Clamping Voltage VC | 49.9 V at 12.0 A IPPM - limits downstream IC voltage during 600 W surge, protecting 3.3 V/5 V logic interfaces |
| Peak Pulse Power | 600 W (10/1000 µs) - sustains high-energy transients common in automotive load-dump and inductive kick scenarios |
| Junction Temperature Range | -65 °C to +185 °C - supports operation in engine bay, transmission control, and ADAS modules without derating |
| Package | SlimSMAW (DO-221AD) - 2.30 × 4.00 × 1.10 mm footprint with cathode band marking and matte tin-plated leads |
| AEC-Q101 Qualified | HM3 suffix confirms qualification per JESD22-A108 and JESD22-A114, including class 2 whisker testing per JESD201 |
Pinout & Package
SlimSMAW (DO-221AD) is a two-terminal surface-mount package with cathode marked by a color band on the top surface. Anode and cathode terminals are located on opposite ends of the molded body; polarity must be observed during PCB layout to ensure correct reverse-bias protection orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side connection point | Connected to ground or low-impedance return path; forms current sink during clamping event |
| Cathode | High-side connection point | Connected to protected line (e.g., sensor output); reverse-biased during normal operation, conducts only during overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| 185 °C Junction Capability | Enables placement in high-temperature zones (e.g., near power stages or under-hood ECUs) without thermal derating penalties |
| MSL Level 1 Moisture Sensitivity | Allows unlimited floor life and reflow up to 260 °C peak, eliminating bake requirements before assembly |
| Halogen-Free & RoHS-Compliant | Meets automotive environmental standards (e.g., ELV, IMDS) and supports sustainable manufacturing compliance |
| Optimized Junction Passivation | Reduces parametric drift and leakage growth under high-temperature bias stress, improving long-term reliability |
| Low Profile (1.10 mm height) | Minimizes board space and profile in compact ADAS camera modules and radar front-ends where Z-height is constrained |
Applications
| Automotive Sensor Protection | Power Line Transient Suppression |
|---|---|
Use Scenario: Protecting analog outputs of pressure, temperature, and position sensors in engine control units exposed to load dump and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between sensor output and ground to clamp negative-going transients and positive ESD events. Use Value: Prevents latch-up or damage to downstream ADC inputs by limiting voltage to ≤49.9 V during 12 A surges, preserving signal integrity. |
Use Scenario: Safeguarding 12 V supply rails feeding infotainment head units and telematics modules against ISO 7637-2 pulse 1/2a/5a transients. IC Role / Device Role / Timing Role: Standoff-rated TVS connected across rail and ground to absorb energy without affecting steady-state regulation. Use Value: Withstands 600 W pulses while maintaining VWM = 30.8 V, allowing compatibility with wide-input buck converters and LDOs. |
| ADAS Camera Interface Protection | Body Control Module Signal Lines |
Use Scenario: Shielding MIPI CSI-2 differential pairs and I²C configuration lines in surround-view camera systems from ESD and cable discharge events. IC Role / Device Role / Timing Role: Discrete TVS placed on each signal line referenced to chassis ground, leveraging low capacitance and fast response. Use Value: Clamps transients within nanoseconds while adding <1 pF parasitic capacitance, avoiding signal integrity degradation at 1.5 Gbps data rates. |
Use Scenario: Securing LIN bus and PWM-controlled actuator signals (e.g., door locks, mirror adjusters) against inductive kickback from relay coils and motors. IC Role / Device Role / Timing Role: Low-leakage (≤1.0 µA at VWM) TVS on bidirectional signal lines to avoid interfering with LIN protocol timing. Use Value: Maintains <2.0 µA leakage at 150 °C, preventing false wake-up or communication errors in hot ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A-H | Same VBR range (34.2–37.8 V), but SMB (DO-214AA) package (4.57 × 3.94 × 2.29 mm) - 110 % larger footprint and 105 % taller than SlimSMAW | Higher thermal resistance (RθJA ≈ 180 °C/W) limits power handling in dense layouts; not AEC-Q101 qualified in standard grade | Select when legacy SMB footprint is fixed and AEC-Q101 is not required; avoid in new automotive designs targeting ASIL-B/C. |
| TPSMF36A | Identical SlimSMAW package and AEC-Q101 qualification, but higher VC = 58.1 V at same IPPM - 16 % less clamping margin than TA6L36AHM3/H | Lower clamping performance increases risk of downstream IC overvoltage during worst-case transients; requires tighter system-level margin analysis | Acceptable for non-safety-critical body electronics where 58.1 V clamping is within IC absolute max ratings; not recommended for ADAS or powertrain. |
Compared with SMBJ36A-H and TPSMF36A, TA6L36AHM3/H delivers superior thermal performance (RθJA ≤ 150 °C/W), tighter clamping (49.9 V), and guaranteed AEC-Q101 qualification in the smallest automotive-grade SMD TVS footprint - making it optimal for next-generation compact, high-temperature automotive modules.
Availability
TA6L36AHM3/H is available at Aetrix Electronics and suitable for automotive sensor protection, ADAS camera interface hardening, and body control module signal line safeguarding requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for TA6L36AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The TA6L series belongs to Vishay's eSMP® family of surface-mount TVS diodes, engineered specifically for AEC-Q101-compliant automotive transient protection with enhanced thermal stability and low-profile packaging.
FAQ
What is the meaning of the 'HM3' suffix in TA6L36AHM3/H?
The HM3 suffix in TA6L36AHM3/H indicates halogen-free, RoHS-compliant construction and full AEC-Q101 qualification, including JESD201 Class 2 whisker testing. This suffix confirms that the TA6L36AHM3/H meets stringent automotive reliability requirements for use in safety-critical and high-temperature environments such as engine control and ADAS systems.
Does TA6L36AHM3/H support bidirectional transient suppression?
No, TA6L36AHM3/H is a unidirectional TVS diode and provides protection only against reverse-polarity transients and ESD events on positively referenced signal lines. It must be installed with cathode toward the protected line and anode to ground. For bidirectional protection, a separate symmetric device or dual-diode configuration is required - TA6L36AHM3/H does not provide symmetrical clamping.
What is the maximum clamping voltage of TA6L36AHM3/H at its rated peak pulse current?
The maximum clamping voltage of TA6L36AHM3/H is 49.9 V at 12.0 A peak pulse current (IPPM), measured under the standard 10/1000 µs waveform. This value ensures that downstream components with 5 V or 3.3 V absolute maximum ratings remain protected during surge events, provided proper PCB layout and grounding practices are followed for the TA6L36AHM3/H installation.
Is TA6L36AHM3/H compatible with lead-free reflow soldering processes?
Yes, TA6L36AHM3/H is fully compatible with lead-free reflow soldering, meeting MSL Level 1 per J-STD-020 and supporting a maximum peak reflow temperature of 260 °C. Its matte tin-plated leads comply with J-STD-002 and JESD22-B102, ensuring reliable wetting and intermetallic formation without voiding or dewetting during standard Pb-free assembly of the TA6L36AHM3/H.
How does the temperature coefficient of VBR affect TA6L36AHM3/H performance at elevated temperatures?
The TA6L36AHM3/H has a typical VBR temperature coefficient of +0.090 %/°C, meaning its breakdown voltage increases linearly with junction temperature. At 150 °C, VBR rises ~11.25 % above its 25 °C value - from 36.0 V to ~40.1 V - which delays clamping onset but maintains safe standoff margin. System designers must verify that this shift remains within the protected circuit's overvoltage tolerance window for the TA6L36AHM3/H to function correctly.
TA6L36AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SlimSMAW (DO-221AD)
TA6L36AHM3/H FAQ
1.How can I place an order for TA6L36AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6L36AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6L36AHM3/H reliable?
The price and inventory of TA6L36AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6L36AHM3/H is usually 5 days.
3.What payment methods are accepted for TA6L36AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6L36AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6L36AHM3/H?
TA6L36AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6L36AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6L36AHM3/H?
For technical support, including TA6L36AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6L36AHM3/H requirements.
6.How does Aetrix verify that TA6L36AHM3/H is sourced from the original manufacturer or authorized distributors?
All TA6L36AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6L36AHM3/H meets industry standards.
7.What is the process for return or replacement of TA6L36AHM3/H?
All TA6L36AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with TA6L36AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6L36AHM3/H part is unused and in its original packaging.
Return procedure for TA6L36AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6L36AHM3/H Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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