Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TA6L39AHM3/H

Part No.:
TA6L39AHM3/H
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-221AC, SMA Flat Leads
Datasheet:
AetrixTA6L39AHM3/H.pdf
Description:
600W,39V 5%, SLIMSMAW PAR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,880

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TA6L39AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SlimSMAW (DO-221AD) package, designed for clamping inductive switching transients and ESD events. It features 39.0 V nominal breakdown voltage (VBR), 33.3 V stand-off voltage (VWM), 53.9 V maximum clamping voltage at 11.1 A peak pulse current, 600 W peak pulse power (10/1000 µs), and AEC-Q101 qualification for automotive electronics protection.

For engineers reviewing the TA6L39AHM3/H datasheet, TA6L39AHM3/H pinout, TA6L39AHM3/H application, or TA6L39AHM3/H equivalent, this page delivers verified electrical parameters, thermal derating behavior, junction temperature capability up to +185 °C, SlimSMAW mechanical dimensions, and direct alternatives for automotive-grade circuit protection design.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology with optimized junction passivation for high-reliability operation under thermal stress. Its unidirectional configuration provides low-clamping-voltage protection against positive-going transients while maintaining <1.0 µA reverse leakage at VWM and 150 °C junction temperature.

The device operates across -65 °C to +185 °C junction range and exhibits 0.091 %/°C temperature coefficient of VBR, enabling predictable voltage shift over temperature. Thermal resistance is rated at RθJA = 150 °C/W (JEDEC 51-2A, FR4, 2 oz.) and RθJM = 15 °C/W (JEDEC 51-14 TDIM), supporting high-power transient absorption in compact layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/typ/max) 37.1 / 39.0 / 41.0 V - Ensures reliable turn-on above system operating voltage with margin against tolerance drift
VWM 33.3 V - Maximum continuous reverse voltage before significant leakage; compatible with 3.3 V–24 V supply rails
IPPM 11.1 A (10/1000 µs) - Peak surge current handling capacity for automotive load-dump and ISO 7637-2 pulse 5a events
VC 53.9 V - Clamped voltage during full IPPM; limits downstream IC stress to safe levels per IEC 61000-4-5
PPPM 600 W - Sustains high-energy transients without thermal runaway; validated per Fig. 1 & Fig. 2 derating curves
TJ max +185 °C - Enables placement near hot components (e.g., power MOSFETs, DC-DC converters) in engine control units
AEC-Q101 Qualified - Meets automotive reliability requirements including high-temperature operating life and whisker testing (JESD 201 Class 2)

Pinout & Package

Package: SlimSMAW (DO-221AD), low-profile surface-mount case with matte tin-plated leads, UL 94 V-0 molding compound, and cathode band marking.

Pin/Terminal Circuit Role Design Meaning
Anode Transient current return path Connected to ground or low-impedance reference; carries full surge current during clamping
Cathode Protected line connection Connected to signal/power line being protected; voltage referenced to anode during clamping

Key Features

Feature Design Value
Unidirectional clamping Protects against positive transients only; avoids false triggering on negative signal swings in DC-biased lines
185 °C junction rating Supports under-hood automotive deployment without thermal derating penalties in high-ambient environments
MSL Level 1 (260 °C peak) Enables standard lead-free reflow assembly without moisture sensitivity concerns or baking requirements
Halogen-free & RoHS-compliant Meets global environmental compliance mandates for automotive OEMs and Tier 1 suppliers
Low-profile SlimSMAW footprint Reduces PCB real estate vs. SMA/SMB; enables dense layout in ADAS camera modules and radar ECUs

Applications

Automotive Power Line Protection Engine Control Unit (ECU) Signal Lines

Use Scenario: Protecting 12 V battery-fed microcontroller power rails from load dump pulses (ISO 7637-2 Pulse 5a).

IC Role / Device Role: Primary clamping element placed between battery input and LDO/regulator input.

Use Value: Limits voltage to ≤53.9 V during 11.1 A surge, preventing regulator overvoltage failure and ensuring MCU reset integrity.

Use Scenario: Shielding CAN transceiver data lines from ESD and inductive coupling in engine bay harnesses.

IC Role / Device Role: Point-of-entry TVS on differential pair, grounded via short trace to chassis.

Use Value: Clamps fast transients below 53.9 V while maintaining <1.0 µA leakage at 33.3 V, preserving signal integrity and bus timing.

ADAS Camera Module Power Input Electric Power Steering (EPS) Motor Driver Feedback

Use Scenario: Safeguarding 5 V/3.3 V imaging sensor power supplies against ignition noise and alternator ripple.

IC Role / Device Role: Secondary protection stage after bulk capacitor, placed adjacent to sensor PMIC.

Use Value: Delivers 600 W pulse handling in ultra-low profile SlimSMAW package, minimizing board height in space-constrained camera housings.

Use Scenario: Protecting analog feedback signals (e.g., motor phase current sense) from commutation spikes in EPS H-bridge drivers.

IC Role / Device Role: Unidirectional TVS on low-side shunt amplifier inputs, referenced to power ground.

Use Value: Withstands repeated 11.1 A surges at 185 °C junction temperature, ensuring long-term reliability in thermally aggressive EPS enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ36A-E3/57T Higher VBR (34.2–37.8 V), lower PPPM (400 W), same DO-214AC package but larger footprint than SlimSMAW Limited to non-automotive industrial use; not AEC-Q101 qualified; lacks 185 °C rating Choose when cost is primary constraint and automotive qualification or high-temperature operation is unnecessary
TPSMF36A Same VWM/VBR range, 600 W rating, AEC-Q101 qualified, but in SOD-128 (DO-221AD) - identical package to TA6L39AHM3/H Direct form-fit replacement with identical mounting and thermal performance; slightly higher VC (56.5 V) Select when needing second-source availability with no PCB or thermal redesign required

Compared with SMAJ36A-E3/57T and TPSMF36A, TA6L39AHM3/H offers superior high-temperature capability (185 °C vs. 150 °C), tighter VBR tolerance (±5% vs. ±10%), and halogen-free compliance - critical for next-generation automotive electronics requiring extended lifetime under thermal stress.

Availability

TA6L39AHM3/H is available at Aetrix Electronics and suitable for automotive power line protection, engine control unit (ECU) signal conditioning, and ADAS camera module designs requiring stable component supply, AEC-Q101 qualification, and high-temperature reliability.

Supply support for TA6L39AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.

The TA6L39AHM3/H belongs to Vishay's PAR® series of transient voltage suppressors, engineered specifically for robust, high-temperature circuit protection in automotive electronics subject to harsh thermal and electrical stress.

FAQ

What is the clamping voltage of TA6L39AHM3/H at its rated peak pulse current?

The TA6L39AHM3/H has a maximum clamping voltage (VC) of 53.9 V at its rated peak pulse current (IPPM) of 11.1 A under the standard 10/1000 µs waveform. This value is measured per Figure 3 in the official Vishay datasheet (Document Number: 87415) and ensures downstream components remain within safe operating voltage limits during surge events.

Is TA6L39AHM3/H qualified for automotive applications?

Yes, TA6L39AHM3/H is AEC-Q101 qualified and meets JESD 201 Class 2 whisker test requirements. Its 185 °C maximum junction temperature, halogen-free construction, and MSL Level 1 reflow compatibility make it suitable for under-hood automotive systems including ECUs, ADAS modules, and electric power steering controllers.

What package type does TA6L39AHM3/H use, and what are its key mechanical advantages?

TA6L39AHM3/H uses the SlimSMAW (DO-221AD) package - a low-profile surface-mount outline with 0.118" (3.00 mm) maximum height. Its advantages include reduced PCB footprint versus SMA/SMB, UL 94 V-0 flammability rating, matte tin-plated leads compliant with J-STD-002, and optimized thermal resistance (RθJM = 15 °C/W) for high-power transient dissipation.

How does the temperature coefficient affect TA6L39AHM3/H's breakdown voltage over temperature?

The TA6L39AHM3/H has a typical temperature coefficient (αT) of 0.091 %/°C for VBR. Using the formula VBR at TJ = VBR at 25 °C × (1 + αT × (TJ − 25)), VBR increases by ~1.4 V at 150 °C ambient, ensuring consistent clamping margin across the full -65 °C to +185 °C operating range.

What is the maximum reverse leakage current of TA6L39AHM3/H at its stand-off voltage?

At its stand-off voltage (VWM) of 33.3 V and ambient temperature of 25 °C, TA6L39AHM3/H exhibits a maximum reverse leakage current (IR) of 1.0 µA. At elevated junction temperature (150 °C), leakage remains ≤5.0 µA - a critical parameter for preserving signal integrity in low-power sensor interfaces and always-on automotive circuits.

TA6L39AHM3/H Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-221AC, SMA Flat Leads
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
33.3V
Voltage - Breakdown (Min):
37.1V
Voltage - Clamping (Max) @ Ipp:
53.9V
Current - Peak Pulse (10/1000µs):
11.1A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SlimSMAW (DO-221AD)

TA6L39AHM3/H FAQ

1.How can I place an order for TA6L39AHM3/H through Aetrix?

Please submit a Request for Quotation (RFQ) for TA6L39AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TA6L39AHM3/H reliable?

The price and inventory of TA6L39AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6L39AHM3/H is usually 5 days.

3.What payment methods are accepted for TA6L39AHM3/H?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6L39AHM3/H transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TA6L39AHM3/H?

TA6L39AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TA6L39AHM3/H order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TA6L39AHM3/H?

For technical support, including TA6L39AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6L39AHM3/H requirements.

6.How does Aetrix verify that TA6L39AHM3/H is sourced from the original manufacturer or authorized distributors?

All TA6L39AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6L39AHM3/H meets industry standards.

7.What is the process for return or replacement of TA6L39AHM3/H?

All TA6L39AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with TA6L39AHM3/H, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TA6L39AHM3/H part is unused and in its original packaging.

Return procedure for TA6L39AHM3/H:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TA6L39AHM3/H Tags

  • TA6L39AHM3/H
  • TA6L39AHM3/H PDF
  • TA6L39AHM3/H Datasheet
  • TA6L39AHM3/H Specifications
  • TA6L39AHM3/H Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TA6L39AHM3/H
  • Buy TA6L39AHM3/H
  • TA6L39AHM3/H Price
  • TA6L39AHM3/H Distributor
  • TA6L39AHM3/H Supplier
  • TA6L39AHM3/H Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER