My Inquiry
My Account
Vishay General Semiconductor - Diodes Division TA6L9.1AHM3/H
.jpg)
- Part No.:
- TA6L9.1AHM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
TA6L9.1AHM3/H.pdf
- Description:
- 600W,9.1V 5%, SLIMSMAW PAR
- Quantity:
- Payment:
- Shipping:
Inventory:7,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TA6L9.1AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SlimSMAW (DO-221AD) package, designed for automotive-grade overvoltage protection. It features 9.1 V breakdown voltage (VBR), 7.78 V stand-off voltage (VWM), 44.8 V clamping voltage at 13.4 A peak pulse current, 600 W peak pulse power (10/1000 µs), and operates up to 185 °C junction temperature - deployed on signal lines of automotive sensor units and MOSFET gate drivers.
For engineers reviewing the TA6L9.1AHM3/H datasheet, TA6L9.1AHM3/H pinout, TA6L9.1AHM3/H application, or TA6L9.1AHM3/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, MSL level 1 solderability, halogen-free RoHS-compliant construction, and compatibility with high-reliability automotive transients per ISO 7637-2.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for junction stability under thermal stress. Its design supports 185 °C maximum junction temperature and meets JESD22-B102 solderability standards with matte tin-plated leads.
The device delivers precise clamping performance with 0.060 %/°C temperature coefficient of VBR, enabling predictable voltage threshold behavior across automotive operating ranges. It is rated for non-repetitive 10/1000 µs surge waveforms and derates linearly above 25 °C ambient per published thermal curves.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 8.65 / 9.10 / 9.55 V - defines precise reverse breakdown threshold at 1.0 mA test current for reliable overvoltage triggering |
| VWM | 7.78 V - maximum continuous reverse working voltage before leakage exceeds 25 µA, ensuring no false triggering in normal operation |
| VC @ IPPM | 44.8 V - clamping voltage at 13.4 A peak pulse current, limiting downstream IC voltage stress during transients |
| PPPM | 600 W - peak pulse power handling capability for 10/1000 µs waveform, sufficient for ISO 7637-2 Pulse 1 & 2a suppression |
| TJ max | +185 °C - enables use in under-hood automotive environments without thermal derating penalties |
| Package | SlimSMAW (DO-221AD) - low-profile SMD outline with 0.106" width, optimized for space-constrained PCB layouts |
| AEC-Q101 | Qualified - certified for automotive electronic systems per stress test requirements including HTRB, HTGB, and TCT |
Pinout & Package
SlimSMAW (DO-221AD) is a two-terminal surface-mount package with cathode indicated by a color band. The device has no internal circuitry beyond the single PN junction; terminals are anode and cathode only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction; connected to system ground or low-side reference | Provides return path for surge current during clamping; must be routed with low-inductance trace to minimize voltage overshoot |
| Cathode | Current exit point during reverse-biased clamping; marked with color band | Connected to protected line (e.g., sensor output or MOSFET gate); determines polarity-sensitive placement on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Unidirectional clamping | Enables protection of DC-biased signal lines without interfering with normal forward operation or introducing leakage in active circuits |
| Junction passivation | Reduces surface recombination and improves long-term reliability under high-temperature bias stress in automotive applications |
| MSL Level 1 rating | Allows unlimited floor life and reflow at 260 °C peak without baking, simplifying manufacturing for high-volume automotive PCB assembly |
| Halogen-free & RoHS | Meets automotive environmental compliance requirements (ELV, IMDS) and eliminates corrosive halogen emissions during board rework or end-of-life processing |
| 185 °C TJ capability | Supports placement near heat sources (e.g., power converters, engine control modules) without derating or thermal shutdown concerns |
Applications
| Automotive Sensor Protection | MOSFET Gate Protection |
|---|---|
Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine control units exposed to load-dump and inductive switching transients. IC Role / Device Role / Timing Role: TVS diode placed directly at sensor connector or ASIC input pin to clamp fast-rising ESD and ISO 7637-2 pulses before they reach sensitive front-end circuitry. Use Value: Limits voltage excursion to ≤44.8 V during 13.4 A surges, preserving sensor accuracy and preventing latch-up in downstream ADC or op-amp stages. | Use Scenario: Safeguarding N-channel MOSFET gate-source terminals in automotive motor drivers subjected to Miller-induced voltage spikes during high-di/dt switching. IC Role / Device Role / Timing Role: Unidirectional TVS connected between gate and source to absorb positive-going transients while remaining invisible during normal PWM gate drive. Use Value: Prevents gate oxide breakdown by clamping gate-source voltage to 44.8 V, maintaining MOSFET reliability across 100,000+ switching cycles. |
| Infotainment Data Line Protection | Body Control Module Power Rail Clamping |
Use Scenario: Shielding LIN bus or CAN FD signal lines in infotainment head units from coupling noise and battery transients during vehicle start-stop events. IC Role / Device Role / Timing Role: TVS placed inline on bidirectional data lines with minimal capacitance impact (CJ ~100 pF typical at VWM) to preserve signal integrity. Use Value: Maintains <1 ns response time and sub-100 pF junction capacitance to avoid signal distortion on 20 kbps–2 Mbps serial buses. | Use Scenario: Suppressing load-dump spikes (up to 60 V, 400 ms) on 12 V power rails feeding microcontrollers and EEPROM in door modules and lighting controllers. IC Role / Device Role / Timing Role: Parallel-connected TVS absorbing energy from alternator regulation failure events, coordinated with upstream fuses and poly-switches. Use Value: Handles 600 W peak power for defined 10/1000 µs duration, reducing rail voltage overshoot to safe levels for 3.3 V/5 V logic supplies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ9.0A-HF | 9.0 V VBR (min 8.55 V), 600 W PPPM, SMA package (DO-214AC), higher RθJA (150 °C/W) | Larger footprint; lower thermal performance limits sustained surge duty cycle in compact enclosures | Choose when existing SMA layout exists and 0.1 V VBR tolerance is acceptable |
| TPSMA6L9.0A | 9.0 V VBR, same SlimSMAW package, but not AEC-Q101 qualified; 175 °C TJ max | Not certified for automotive use; unsuitable for production ECUs requiring PPAP documentation | Acceptable for industrial prototypes or non-safety-critical consumer designs where qualification is waived |
Compared with SMAJ9.0A-HF and TPSMA6L9.0A, TA6L9.1AHM3/H provides tighter VBR tolerance (±0.45 V), guaranteed AEC-Q101 qualification, and superior thermal resistance (RθJM = 12–15 °C/W), making it optimal for space-constrained, high-reliability automotive modules requiring zero field returns.
Availability
TA6L9.1AHM3/H is available at Aetrix Electronics and suitable for automotive sensor protection, MOSFET gate safeguarding, and body control module power rail clamping requiring stable component supply across multi-year production programs.
Supply support for TA6L9.1AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The TA6Lx.xA series belongs to Vishay's PAR® family of transient voltage suppressors, engineered specifically for AEC-Q101-compliant automotive electronics demanding robustness against ISO 7637-2 and ISO 16750-2 transients.
FAQ
What is the exact breakdown voltage range for TA6L9.1AHM3/H?
The TA6L9.1AHM3/H has a guaranteed breakdown voltage range of 8.65 V (minimum) to 9.55 V (maximum) at 1.0 mA test current, with a nominal value of 9.10 V. This tight ±5% tolerance ensures consistent clamping behavior across production lots and temperature extremes, critical for meeting automotive functional safety thresholds in systems using the TA6L9.1AHM3/H.
Is TA6L9.1AHM3/H qualified for automotive applications?
Yes, TA6L9.1AHM3/H is AEC-Q101 qualified and carries the HM3 suffix indicating compliance with JESD201 Class 2 whisker testing. It is rated for operation up to +185 °C junction temperature and meets MSL Level 1 reflow requirements - all verified per Vishay's qualification report for the TA6Lx.xA family, confirming its suitability for production automotive ECUs where the TA6L9.1AHM3/H is deployed.
What package type does TA6L9.1AHM3/H use, and how is polarity identified?
TA6L9.1AHM3/H uses the SlimSMAW (DO-221AD) surface-mount package, measuring 4.00 mm × 2.70 mm × 1.10 mm. Polarity is indicated by a cathode band printed on the top surface; the banded end is the cathode terminal, and the opposite end is the anode - this marking is essential for correct orientation during PCB layout and automated placement of the TA6L9.1AHM3/H.
What is the clamping voltage of TA6L9.1AHM3/H at its rated peak pulse current?
The TA6L9.1AHM3/H clamps to a maximum of 44.8 V at its rated peak pulse current of 13.4 A (10/1000 µs waveform). This value is measured under standardized surge conditions and defines the upper voltage limit imposed on protected circuitry during transient events - a key parameter used in margin analysis for ICs downstream of the TA6L9.1AHM3/H.
Does TA6L9.1AHM3/H meet RoHS and halogen-free requirements?
Yes, TA6L9.1AHM3/H is halogen-free and RoHS-compliant, as confirmed by Vishay's material declaration (Doc. #99912). The "HM3" suffix explicitly denotes compliance with both requirements, along with AEC-Q101 qualification - making the TA6L9.1AHM3/H suitable for global automotive supply chains requiring full chemical compliance documentation.
TA6L9.1AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-221AC, SMA Flat Leads
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 44.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SlimSMAW (DO-221AD)
TA6L9.1AHM3/H FAQ
1.How can I place an order for TA6L9.1AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for TA6L9.1AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TA6L9.1AHM3/H reliable?
The price and inventory of TA6L9.1AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TA6L9.1AHM3/H is usually 5 days.
3.What payment methods are accepted for TA6L9.1AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TA6L9.1AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TA6L9.1AHM3/H?
TA6L9.1AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TA6L9.1AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TA6L9.1AHM3/H?
For technical support, including TA6L9.1AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TA6L9.1AHM3/H requirements.
6.How does Aetrix verify that TA6L9.1AHM3/H is sourced from the original manufacturer or authorized distributors?
All TA6L9.1AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TA6L9.1AHM3/H meets industry standards.
7.What is the process for return or replacement of TA6L9.1AHM3/H?
All TA6L9.1AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with TA6L9.1AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TA6L9.1AHM3/H part is unused and in its original packaging.
Return procedure for TA6L9.1AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TA6L9.1AHM3/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
