Diodes Incorporated TB1800L-13-F

Overview

TB1800L-13-F from Diodes Incorporated is a bidirectional surface-mount thyristor surge protective device (TSPD) designed for primary-level transient overvoltage protection in telecom and data line interfaces. It features a 160V maximum repetitive off-state voltage (V_DRM), 30A peak pulse current (I_PP) at 10/1000μs, 220V breakover voltage (V_BO), 3.5V on-state voltage (V_T) at 1A, and 60pF off-state capacitance - enabling robust GR-1089-CORE and IEC 61000-4-5 compliance in DSL, T1/E1, and PoE-powered Ethernet ports.

For engineers reviewing the TB1800L-13-F datasheet, TB1800L-13-F pinout, TB1800L-13-F application, or TB1800L-13-F equivalent, key selection criteria include stand-off voltage margin vs. line operating voltage, peak pulse current rating under IEC 61000-4-5 8/20μs stress, off-state capacitance impact on high-speed signal integrity, and SMB package thermal performance in dense PCB layouts.

Technical Context

This bidirectional TSPD operates as a voltage-triggered crowbar device: it remains in high-impedance off-state until applied voltage exceeds its 220V breakover threshold (V_BO), then latches into low-voltage conduction (<3.5V at 1A) to shunt surge energy. Its oxide-glass passivated junction ensures stable V_BO with only +0.1%/°C temperature coefficient.

Unlike unidirectional TVS diodes, TB1800L-13-F provides symmetrical clamping for AC-coupled lines without polarity concerns. Its 150A I_PP rating at 8/20μs and 30A at 10/1000μs supports multi-standard surge immunity testing including ITU-T K.21, FCC Part 68, and UL497B.

Key Specifications

Pinout & Package

Package: SMB (DO-214AA), surface-mount, bidirectional - no polarity marking required. Case material is UL 94V-0 molded plastic; terminals feature matte tin plating for RoHS-compliant solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional surge protection applications.

Compared with SMBJ160A and P6SMB160A, TB1800L-13-F delivers true bidirectional latching clamping with lower V_C (≈3.5V), enabling simpler circuit topology and superior energy handling for telecom-grade surge standards - at the cost of requiring sufficient load current to maintain conduction.

Availability

TB1800L-13-F is available at Aetrix Electronics and suitable for DSL line interface protection, T1/E1 data line protection, and PoE power sourcing equipment requiring stable component supply and full traceability through J-STD-020 moisture sensitivity Level 1 handling.

Supply support for TB1800L-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability protection, power management, and signal integrity solutions for industrial, telecom, and computing markets.

TB1800L-13-F belongs to the TB-series bidirectional TSPD product line, engineered specifically for primary-level surge immunity in telecom infrastructure and data communications equipment operating up to 160V DC or AC RMS.

FAQ

What is the minimum load current required for TB1800L-13-F to remain latched after triggering?

The holding current (I_H) ranges from 150mA to 800mA depending on junction temperature and manufacturing variation. To ensure reliable reset prevention, the protected circuit must draw ≥800mA through the device during clamping - verified by checking load impedance against V_T = 3.5V and worst-case V_DRM derating.

Can TB1800L-13-F be used in DC-only applications like PoE?

Yes - its bidirectional design works identically on DC lines. With 160V V_DRM, it safely withstands IEEE 802.3at PoE+ voltages (up to 57V) plus transients, while the 220V V_BO provides ample margin before clamping activates during cable discharge or lightning events.

How does TB1800L-13-F compare to standard TVS diodes in surge response time?

TB1800L-13-F has typical breakover delay <100ns - comparable to fast TVS diodes - but differs fundamentally in behavior: once triggered, it latches low-impedance until current falls below I_H, whereas TVS diodes return to high-Z immediately after surge decay. This makes it better suited for sustained overvoltages.

Is the SMB package thermally adequate for repeated 30A surges?

With R_θJA = 120°C/W and short-duration 30A pulses (10/1000μs), junction temperature rise is limited to <15°C per event. For repetitive surges, thermal design must ensure average power dissipation stays within 1.2W (based on R_θJA and ambient limits), supported by PCB copper area per Diodes' recommended pad layout.