Diodes Incorporated TB3100M-13-F

Overview

TB3100M-13-F from Diodes Incorporated is a bidirectional surface-mount thyristor surge protection device (TSPD) designed for primary-level transient overvoltage clamping in telecom and industrial interface lines. It features a 275V maximum repetitive off-state voltage (V_DRM), 50A peak pulse current (10/1000μs), 350V breakover voltage (V_BO), 3.5V on-state voltage at 1A, and 60pF off-state capacitance - enabling robust GR-1089-CORE and IEC 61000-4-5 compliance in DSL, T1/E1, and PoE-powered equipment.

For engineers reviewing the TB3100M-13-F datasheet, TB3100M-13-F pinout, TB3100M-13-F application, or TB3100M-13-F equivalent, key selection criteria include stand-off voltage margin relative to line operating voltage, hold-current stability across temperature, surge waveform derating (e.g., 250A @ 8/20μs), junction-to-lead thermal resistance (20°C/W), and SMB package compatibility with IPC-7351B layout standards.

Technical Context

This thyristor operates as a voltage-triggered crowbar device: it remains in high-impedance off-state until applied voltage exceeds its 350V breakover threshold, then latches into low-voltage conduction (≤3.5V) while sustaining ≥50A surge current. Its bidirectional symmetry eliminates polarity concerns in AC-coupled interfaces like telephone lines or Ethernet PHYs.

Thermal design relies on its 20°C/W junction-to-lead resistance and SMB package's 0.093g mass, supporting rapid heat dissipation during transient events. The 0.1%/°C positive temperature coefficient of V_BR ensures predictable voltage margin shift over -40°C to +150°C operating range.

Key Specifications

Pinout & Package

Package: SMB (DO-214AA), surface-mount, bidirectional, no polarity marking. Dimensions: 4.3mm × 2.5mm × 2.3mm (L × W × H), UL 94V-0 molded plastic body, matte tin-plated terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional thyristor surge protection applications.

Compared with SMBJ270CA and P6SMB330A, TB3100M-13-F delivers superior energy absorption per unit volume due to thyristor latching, lower clamping voltage under sustained surges, and single-device bidirectional simplicity - making it optimal for telecom line cards where GR-1089-CORE Level 3 compliance and space constraints are primary drivers.

Availability

TB3100M-13-F is available at Aetrix Electronics and suitable for DSL line interface protection, T1/E1 data line protection, and PoE power sourcing equipment requiring stable component supply and full traceability through production lifecycles.

Supply support for TB3100M-13-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability protection, power management, and signal integrity solutions for industrial, telecom, and consumer markets.

TB3100M-13-F belongs to the TB-series bidirectional thyristor surge protection devices, engineered specifically for primary-level transient suppression in telecom infrastructure and industrial communication interfaces where robustness, low capacitance, and standardized SMB packaging are essential.

FAQ

What is the minimum load current required to maintain conduction after TB3100M-13-F triggers?

The device requires ≥150mA load current to sustain conduction (holding current I_H min), per datasheet specification. If load current drops below this threshold within 30ms of triggering, the device recovers to high-impedance state. This value is validated at 25°C and decreases slightly at elevated temperatures.

Can TB3100M-13-F be used in DC power line protection without external biasing?

Yes - its bidirectional symmetry allows direct placement across DC power rails (e.g., 48V PoE pairs) without polarity concern. However, the 275V V_DRM must exceed the maximum steady-state DC voltage plus worst-case ripple; for 48V systems, it provides ample margin against both normal operation and fast transients.

How does junction temperature affect TB3100M-13-F's breakover voltage?

Breakover voltage increases by +0.1% per °C rise in junction temperature (positive temperature coefficient). At 125°C, V_BO rises ~10% above its 25°C value (350V → ~385V), which must be accounted for in designs operating near thermal limits to avoid insufficient trigger margin.

Is TB3100M-13-F compatible with lead-free reflow profiles?

Yes - it is qualified for lead-free soldering per JEDEC J-STD-020, with moisture sensitivity level 1 (MSL-1), allowing unlimited floor life and standard Pb-free reflow profiles up to 260°C peak temperature. Matte tin plating ensures reliable wetting and intermetallic formation.