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Toshiba Semiconductor and Storage TBAT54,LM

Part No.:
TBAT54,LM
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single Diodes
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixTBAT54,LM.pdf
Description:
DIODE SCHOTTKY 30V 140MA SOT23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,901

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Product details

Overview

TBAT54 from Toshiba Electronic Devices & Storage Corporation is a single silicon epitaxial Schottky barrier diode in SOT-23 package, rated for 35 V peak reverse voltage, 200 mA average rectified current, and 300 A non-repetitive peak forward surge current, optimized for ultra-high-speed switching in low-voltage DC-DC converter freewheeling paths.

For engineers reviewing the TBAT54 datasheet, TBAT54 pinout, TBAT54 application, or TBAT54 equivalent, key selection criteria include its 0.45 V typical forward voltage at 100 mA, 2 ns reverse recovery time, 391 °C/W junction-to-ambient thermal resistance on FR4, and TL4 marking code indicating single-diode configuration.

Technical Context

The TBAT54 employs a planar silicon epitaxial Schottky structure to achieve fast switching with minimal forward conduction loss. Its 2 ns trr and low VF (0.45 V typ. @ 100 mA) enable high-frequency operation in synchronous rectification and flyback snubber circuits.

Thermal design must account for its 391 °C/W Rth(j-a) on standard FR4 and 150 °C max junction temperature. Reverse leakage is specified at 2 µA max @ 25 V, consistent with Schottky barrier behavior under moderate reverse bias.

Key Specifications

ParameterValue and Actual Design Meaning
Peak Reverse Voltage35 V - supports input rails up to 24 V nominal with margin against transients
Average Rectified Current200 mA - suitable for low-power signal path or auxiliary supply rectification
Reverse Recovery Time2 ns - enables stable operation above 10 MHz switching frequencies
Forward Voltage0.45 V typ. @ 100 mA - reduces conduction loss vs. standard PN diodes by ~300 mV
Junction-to-Ambient Rθ391 °C/W - requires thermal pad or airflow for >100 mA continuous operation
PackageSOT-23 - 3-pin surface-mount footprint compatible with automated assembly

Pinout & Package

SOT-23 package, 3-terminal plastic surface-mount device weighing 9 mg (typ.), JEDEC-compliant outline with standard lead pitch and coplanarity.

Pin/TerminalCircuit RoleDesign Meaning
1AnodeForward current entry point; connects to switched node in buck/flyback topologies
2CathodeForward current exit; ties to ground or output rail in freewheeling paths
3Not ConnectedNo internal connection; left floating or grounded per layout best practice

Key Features

FeatureDesign Value
Ultra-High-Speed Switching2 ns trr enables use in >10 MHz DC-DC converters without tail current penalty
Low Forward Voltage0.45 V typical at 100 mA reduces power loss by ~0.045 W vs. 0.7 V Si diode
SOT-23 FootprintStandardized 3-pin package allows drop-in replacement in space-constrained PCBs
TL4 Marking CodeUnambiguous visual identification of single-diode variant on assembled boards

Applications

DC-DC Converter FreewheelingUSB Power Path Protection

Use Scenario: Low-loss freewheeling path in 3.3 V/5 V buck converters powering microcontrollers.

IC Role / Device Role / Timing Role: Schottky rectifier conducting during low-side switch off-time; critical for efficiency at light loads.

Use Value: 0.45 V VF minimizes conduction loss, improving full-load efficiency by ~1.2% over standard Si diodes.

Use Scenario: Reverse-polarity and backfeed protection in USB Type-A host ports.

IC Role / Device Role / Timing Role: Unidirectional blocking element preventing VBUS-to-VDD backfeed during peripheral disconnect.

Use Value: 35 V VRM withstands USB transient surges; 2 ns trr avoids latch-up during hot-plug events.

Signal-Level ClampingLow-Power Sensor Interface

Use Scenario: Input clamping network for 3.3 V logic inputs exposed to ±12 V analog sensor signals.

IC Role / Device Role / Timing Role: Fast-turn-on Schottky clamp limiting voltage excursions before ESD protection triggers.

Use Value: 2 ns response ensures clamping occurs within first 5 ns of overvoltage edge, protecting downstream CMOS gates.

Use Scenario: Biasing and level-shifting in battery-powered environmental sensor nodes.

IC Role / Device Role / Timing Role: Isolation diode separating coin-cell backup rail from main LDO output.

Use Value: 200 mA IO rating supports peak sensor burst currents; 9 mg weight suits ultra-lightweight IoT modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
RB520S-30T2R30 V VR, 200 mA IO, 0.35 V VF @ 100 mA, same SOT-23 packageLower VR margin; better VF but tighter voltage headroomSelect when input rail ≤15 V and lowest conduction loss is prioritized
BAT54HT1G30 V VR, 200 mA IO, 0.45 V VF @ 100 mA, SOT-23, ON Semiconductor marking "B5"Identical electrical specs; different marking and manufacturer qualificationChoose for dual-sourcing where Toshiba and ON Semi approvals are both required

Compared with RB520S-30T2R and BAT54HT1G, TBAT54 provides higher 35 V peak reverse voltage for 24 V system compatibility while maintaining identical 200 mA current rating and 0.45 V forward voltage - making it preferred for industrial 24 V DC-DC designs requiring transient margin.

Availability

TBAT54 is available at Aetrix Electronics and suitable for DC-DC converter freewheeling, USB power path protection, and low-power sensor interface applications requiring stable component supply across automotive infotainment, industrial control, and portable medical devices.

Supply support for TBAT54 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability and industrial-grade performance.

The TBAT54 belongs to Toshiba's Schottky barrier diode product line, engineered specifically for ultra-high-speed switching in compact, thermally constrained power conversion and signal conditioning circuits.

FAQ

What is the maximum junction temperature rating for TBAT54?

The TBAT54 has a maximum junction temperature (Tj) rating of 150 °C, as specified in Toshiba's absolute maximum ratings table. This limit applies under continuous operation with proper thermal management. Exceeding this temperature may accelerate degradation and reduce long-term reliability. Engineers must verify board-level thermal performance using the 391 °C/W Rth(j-a) value and ensure TBAT54 operates within this boundary across all ambient conditions and load profiles.

Does TBAT54 have a built-in thermal shutdown feature?

No, TBAT54 does not include thermal shutdown circuitry. As a passive Schottky barrier diode, it lacks integrated sensing or protection logic. Thermal safety relies entirely on external design - including PCB copper area, airflow, and derating per Toshiba's Reliability Handbook. The datasheet explicitly warns that sustained high-temperature operation can significantly reduce reliability even within absolute maximum ratings, so TBAT54 must be used with appropriate thermal margins and no reliance on self-protection.

What marking code identifies the TBAT54 on the SOT-23 package?

The TBAT54 is marked with "TL4" on the top surface of its SOT-23 package. This marking distinguishes it from related variants: TBAT54A (TV3), TBAT54C (TW1), and TBAT54S (TV4). The TL4 code confirms the single-diode configuration and is laser-etched or printed per JEDEC standards. Visual inspection of TL4 under magnification is the field-verified method to confirm genuine TBAT54 units during incoming inspection or rework.

Can TBAT54 replace a standard 1N4148 in high-speed signal clamping?

TBAT54 is not a direct replacement for 1N4148 in general-purpose signal clamping due to higher reverse leakage (2 µA max @ 25 V vs. <25 nA for 1N4148) and lower reverse breakdown (35 V vs. 100 V). However, TBAT54 is superior for low-voltage, high-speed clamping where fast trr (2 ns) and low VF matter - e.g., 3.3 V logic protection. For TBAT54 to function safely in such roles, the clamped signal must stay below 25 V and ambient temperature must remain moderate to avoid thermal runaway from leakage current.

Is TBAT54 RoHS compliant and halogen-free?

Yes, TBAT54 meets RoHS Directive 2011/65/EU requirements and is halogen-free, as confirmed by Toshiba's environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and bromine/chlorine content is below 900 ppm each. Full material declarations and test reports are available upon request from Toshiba or authorized distributors for TBAT54 procurement into regulated markets.

TBAT54,LM Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
140mA
Voltage - Forward (Vf) (Max) @ If:
580 mV @ 100 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
1.5 ns
Current - Reverse Leakage @ Vr:
2 µA @ 25 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Operating Temperature - Junction:
150°C (Max)

TBAT54,LM FAQ

1.How can I place an order for TBAT54,LM through Aetrix?

Please submit a Request for Quotation (RFQ) for TBAT54,LM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TBAT54,LM reliable?

The price and inventory of TBAT54,LM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TBAT54,LM is usually 5 days.

3.What payment methods are accepted for TBAT54,LM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TBAT54,LM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TBAT54,LM?

TBAT54,LM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TBAT54,LM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TBAT54,LM?

For technical support, including TBAT54,LM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TBAT54,LM requirements.

6.How does Aetrix verify that TBAT54,LM is sourced from the original manufacturer or authorized distributors?

All TBAT54,LM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TBAT54,LM meets industry standards.

7.What is the process for return or replacement of TBAT54,LM?

All TBAT54,LM units undergo pre-shipment inspection (PSI). If there is an issue with TBAT54,LM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TBAT54,LM part is unused and in its original packaging.

Return procedure for TBAT54,LM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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