Taiwan Semiconductor Corporation TBS806

Overview

TBS806 from Taiwan Semiconductor is a 600V, 8A standard quad bridge rectifier in TBS package, featuring glass-passivated junctions, UL recognition (E-326854), and J-STD-020 Level 1 moisture sensitivity - deployed in AC/DC conversion stages of switching mode power supplies.

For engineers reviewing the TBS806 datasheet, TBS806 pinout, TBS806 application, or TBS806 equivalent, key selection criteria include repetitive peak reverse voltage (600 V), forward current rating (8 A), surge capability (200 A @ 8.3 ms), thermal resistance (R_θJL = 13 °C/W), and RoHS/halogen-free compliance per IEC 61249-2-21.

Technical Context

The TBS806 integrates four silicon diodes in a single-phase full-wave bridge configuration with common-cathode and common-anode terminals. Its glass-passivated junction ensures stable reverse leakage (<5 µA at 25°C) and high-temperature operation up to 150°C junction temperature.

Thermal performance is characterized by R_θJL = 13 °C/W and R_θJA = 50 °C/W on a 16 mm × 16 mm copper pad PCB. Forward voltage is specified at 0.97 V (max) per diode at 8 A and 25°C, dropping to 0.89 V at 125°C - supporting efficient conduction in compact SMPS designs.

Key Specifications

Pinout & Package

Package: TBS - surface-mount molded plastic case (UL 94V-0), 4-pin single-phase bridge configuration with polarity marked on top surface. Dimensions: 10.2 mm × 9.9 mm × 1.65 mm (D × E × A2), matte tin-plated leads compliant with J-STD-002 solderability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with GBU8K and GBJ806, the TBS806 offers superior thermal performance (R_θJL = 13 °C/W), tighter moisture control (Level 1), and optimized footprint for space-constrained SMPS - making it preferred for high-density, high-reliability AC/DC front-ends.

Availability

TBS806 is available at Aetrix Electronics and suitable for switching mode power supplies, AC-to-DC adapters, and industrial LED drivers requiring stable component supply, long-lifecycle availability, and RoHS-compliant sourcing.

Supply support for TBS806 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global power, industrial, and consumer markets since 1979.

The TBS-series bridge rectifiers are designed specifically for high-efficiency, surface-mount AC/DC conversion in space- and thermal-constrained power supplies - emphasizing reliability, UL safety compliance, and automated assembly readiness.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for the TBS806?

The TBS806 has a maximum repetitive peak reverse voltage (V_RRM) of 600 V. This rating is confirmed in the Absolute Maximum Ratings table and defines the highest instantaneous reverse voltage each diode can block repeatedly without breakdown. It corresponds to a maximum RMS input voltage of 420 V, making the TBS806 suitable for universal AC input (85–264 V_AC) applications where peak line voltage reaches ~375 V.

Does the TBS806 require baking before reflow soldering?

No, the TBS806 does not require baking before reflow soldering. It is rated at J-STD-020 Moisture Sensitivity Level 1, meaning it has unlimited floor life at ≤30°C/85% RH and may be placed directly into reflow without preconditioning. This simplifies SMT line logistics and eliminates risk of popcorning during thermal cycling - a key advantage over Level 2b or Level 3 alternatives.

What is the forward voltage (V_F) of the TBS806 at full rated current?

The forward voltage (V_F) of the TBS806 is 0.97 V (maximum) per diode at 8 A and 25°C, as specified in the Electrical Specifications table. At elevated junction temperature (125°C), V_F drops to 0.89 V (typical), reflecting the negative temperature coefficient of silicon diodes. This value directly determines conduction losses in the bridge: at 8 A, worst-case loss per diode is ~7.8 W total across four diodes in conduction.

Is the TBS806 UL recognized, and what is its file number?

Yes, the TBS806 is UL Recognized under File # E-326854. This certification applies to the entire TBS806–TBS810 family and confirms compliance with UL 60747-4 for semiconductor devices. The recognition covers construction, flammability (UL 94V-0 molding compound), and electrical safety - enabling faster end-product safety approvals for power supplies using the TBS806 in primary-side rectification.

What thermal resistance values are specified for the TBS806, and how are they measured?

The TBS806 specifies R_θJL = 13 °C/W (junction-to-lead), R_θJC = 9.2 °C/W (junction-to-case), and R_θJA = 50 °C/W (junction-to-ambient). These values are measured per JEDEC standards on a standardized 16 mm × 16 mm copper pad PCB. R_θJL is most relevant for board-level thermal design, as it reflects heat transfer through the lead frame to the PCB copper, enabling accurate estimation of junction temperature rise under load.