Toshiba Semiconductor and Storage TCK401G,LF

Overview

TCK401G,LF from Toshiba Electronic Devices & Storage Corporation is a 28 V high-input-voltage external N-channel MOSFET driver IC with active-high control logic, slew-rate-controlled gate drive, and reverse-current blocking capability via external back-to-back FETs. It operates from 2.7 V to 28 V input, features auto output discharge, over/under-voltage lockout, and integrates a charge pump for enhanced gate drive voltage (up to VIN + 10 V). It is designed for battery charge path selection in portable power systems.

For engineers reviewing the TCK401G,LF datasheet, TCK401G,LF pinout, TCK401G,LF application, or TCK401G,LF equivalent, key selection criteria include its WCSP6E 0.8 mm × 1.2 mm package, 0.58 ms typical VGATE turn-on time at 5 V, 19.7 µs VGATE turn-off time at 9 V, and active-high VCT control with Schmitt-trigger input tolerance beyond VIN.

Technical Context

The TCK401G,LF implements a charge-pump-based gate driver architecture that generates a boosted VGATE up to VIN + 10 V (min. 6.9 V at VIN ≥ 12 V), enabling robust enhancement-mode N-MOSFET conduction across its full 2.7–28 V input range. Its internal inrush current reduction circuit limits dV/dt during startup, while the DIS pin provides controlled output discharge when the driver is disabled.

It incorporates dual protection logic: UVLO triggers below 2.7 V and OVLO above 28 V, both disabling VGATE output. The VSRC pin interfaces directly with the common source node of external back-to-back MOSFETs to support reverse-current blocking - a critical function in bidirectional battery charging and power-path arbitration circuits.

Key Specifications

Pinout & Package

Package: WCSP6E (0.8 mm × 1.2 mm, 0.55 mm height, 1 mg typical weight), bottom-terminal chip-scale package optimized for space-constrained portable designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar external FET driver applications.

Compared with TCK401G,LF, the TPS22992DNYR lacks external FET control and high-voltage capability, limiting use to sub-6 V loads; the RTQ2132BGQW matches voltage range and reverse-blocking but trades off auto-discharge and 3 µA standby current for added monitoring features - making TCK401G,LF optimal for space- and battery-life-critical 2.7–28 V power-path selectors.

Availability

TCK401G,LF is available at Aetrix Electronics and suitable for battery charge path selection, USB-C power delivery arbitration, and industrial backup power switchover requiring stable component supply, long-lifecycle availability, and RoHS-compliant packaging.

Supply support for TCK401G,LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability analog, power, and logic ICs for automotive, industrial, and consumer applications, with emphasis on energy efficiency and miniaturization.

The TCK401G,LF belongs to Toshiba's External FET Driver IC product line, engineered specifically for compact, high-voltage power-path control in portable and battery-powered systems requiring reverse-current blocking and ultra-low quiescent current.

FAQ

What is the function of the VSRC pin on the TCK401G,LF?

The VSRC pin on the TCK401G,LF serves as the common-source reference terminal for external back-to-back N-MOSFETs. When the driver is disabled, it helps short the gate-to-source path to ensure reliable reverse-current blocking. Connecting VSRC to the shared source node is mandatory for proper bidirectional blocking operation - omitting this connection compromises reverse-current protection functionality in the TCK401G,LF.

Does the TCK401G,LF support 24 V industrial input rails?

Yes, the TCK401G,LF supports 24 V industrial input rails within its specified 2.7 V to 28 V operating range. Its 40 V absolute maximum input rating provides margin against transients, and its UVLO (2.7 V) and OVLO (28 V) thresholds ensure safe operation across typical 24 V system variations. The TCK401G,LF is explicitly rated for −40°C to +85°C operation, meeting standard industrial temperature requirements.

How does the DIS pin function in the TCK401G,LF?

The DIS pin on the TCK401G,LF provides automatic output discharge when the driver is disabled: it activates an internal 21 kΩ pull-down resistor between VOUT and GND, ensuring rapid and controlled discharge of output capacitance. This prevents floating outputs and residual voltage hazards. Leaving DIS open is acceptable if discharge is not required, but connecting it to VOUT is necessary for applications demanding fast, deterministic shutdown behavior in the TCK401G,LF.

What is the difference between TCK401G,LF and TCK402G,LF?

The TCK401G,LF uses active-high logic on the VCT pin (high = ON, low = OFF), whereas the TCK402G,LF uses active-low logic (low = ON, high = OFF). Both share identical electrical specifications, package, pinout, and protection features. The functional difference lies solely in control polarity - TCK401G,LF simplifies interface with microcontrollers or PMICs that assert enable signals high, while TCK402G,LF suits systems with active-low enable outputs. Neither is pin-compatible with the other due to inverted logic.

Can the TCK401G,LF drive both single and dual N-MOSFET configurations?

Yes, the TCK401G,LF supports both single-N-MOSFET high-side switches and dual back-to-back N-MOSFET configurations. For single-FET use, VSRC may be left open if VGS margin is sufficient; for dual-FET reverse-blocking, VSRC must connect to the common source node. The TCK401G,LF's charge pump and slew-rate control adapt automatically - no external configuration is needed to switch between topologies, making it flexible across varied power-path architectures.