Toshiba Semiconductor and Storage TCK422G,L3F

Overview

TCK422G,L3F from Toshiba Electronic Devices & Storage Corporation is an over-voltage protection MOSFET gate driver IC designed to control external N-channel MOSFETs in high-reliability load switch applications. It operates across 2.7 V to 28 V input, features 14.29 V typical over-voltage lockout (OVLO), delivers 10 V gate-source drive voltage (V_GS), and consumes ≤0.9 µA standby current. It is used in mobile power rails where compact size and precise voltage clamping are critical.

For engineers reviewing the TCK422G,L3F datasheet, TCK422G,L3F pinout, TCK422G,L3F application, or TCK422G,L3F equivalent, this page provides verified technical context, WCSP6G package mapping, confirmed gate-drive timing (t_ON = 2.9 ms, t_OFF = 44 µs at 12 V), OVLO hysteresis (0.12 V), and real-world MOSFET interface behavior for common-drain and single-high-side topologies.

Technical Context

The TCK422G,L3F integrates a charge pump to generate a regulated 10 V gate drive relative to VIN or VOUT, enabling robust turn-on of low-R_DS(on) N-channel MOSFETs without requiring external boost circuitry. Its dual-gate architecture supports both common-drain (dual-MOSFET) and single high-side configurations, with independent VGATE1 and VGATE2 outputs.

Protection logic includes precise UVLO (2.0 V typ) and OVLO (14.29 V typ, 0.12 V hysteresis) that disable gate drive within microseconds-t_OVP = 41 µs-while maintaining <0.9 µA shutdown current. The internal control logic ensures gate-source voltage remains within safe limits during fault conditions via dedicated G-S protection circuits.

Key Specifications

Pinout & Package

Package: WCSP6G (1.2 mm × 0.8 mm, 0.35 mm max height), ultra-thin wafer-level chip-scale package optimized for mobile and wearable PCBs with strict Z-height constraints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar over-voltage protection gate driver applications.

Compared with TCK422G,L3F, TCK421G,L3F offers higher OVLO headroom for 24 V systems but risks premature shutdown in 12 V applications, while TCK423G,L3F reduces gate drive strength-limiting R_DS(on) optimization-and requires revalidation of MOSFET selection and thermal performance.

Availability

TCK422G,L3F is available at Aetrix Electronics and suitable for mobile power management, wearable battery protection, and IoT load-switching applications requiring stable component supply, long-lifecycle support, and RoHS-compliant WCSP packaging.

Supply support for TCK422G,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs high-reliability analog and power ICs for consumer, industrial, and automotive markets, with emphasis on miniaturization, energy efficiency, and functional safety.

The TCK42xG series targets compact, low-power load-switch applications requiring integrated over-voltage protection and gate drive-specifically for space-constrained mobile, wearable, and IoT end equipment.

FAQ

What is the primary function of the TCK422G,L3F in a power management system?

The TCK422G,L3F functions as an over-voltage protection gate driver IC that controls external N-channel MOSFETs in load-switch configurations. It monitors input voltage and disables gate drive within 41 µs if VIN exceeds 14.29 V (typ), while delivering a regulated 10 V V_GS to ensure full enhancement of low-R_DS(on) MOSFETs. Its role is critical in preventing downstream damage in mobile and wearable power rails.

Does the TCK422G,L3F support both common-drain and single high-side MOSFET topologies?

Yes, the TCK422G,L3F supports both configurations. In common-drain mode, VGATE1 drives the VIN-side MOSFET and VGATE2 drives the VOUT-side MOSFET, with VOUT monitoring the source node. In single high-side mode, VGATE1 is left unconnected and VGATE2 directly drives the MOSFET gate, with VOUT tied to the MOSFET source-enabling flexible implementation without hardware changes.

What is the typical gate drive timing behavior of the TCK422G,L3F at 12 V input?

At VIN = 12 V, the TCK422G,L3F exhibits a typical V_GS turn-on time (t_ON) of 2.9 ms and turn-off time (t_OFF) of 44 µs, measured with 4000 pF gate capacitance. These values reflect controlled slew-rate gate driving that minimizes EMI and inrush current while ensuring rapid fault response-critical for protecting sensitive downstream circuitry during overvoltage events.

How does the TCK422G,L3F achieve ultra-low standby current, and what is its impact?

The TCK422G,L3F achieves ≤0.9 µA maximum standby current (IQ(OFF)) through deep-sleep circuit design and optimized process technology. This enables multi-year operation from small coin cells in wearables and sensor nodes. At 12 V input, it draws less than 11 nW-reducing self-heating and extending battery shelf life far beyond competing solutions with >2 µA shutdown current.

Is the TCK422G,L3F pin-compatible with other members of the TCK42xG family?

Yes, all TCK42xG variants-including TCK422G,L3F-share identical WCSP6G package, pin assignment, and footprint. This allows drop-in substitution across OVLO thresholds (6.31 V to 27.73 V) and V_GS options (5.6 V or 10 V) without PCB redesign, provided system-level validation confirms compatibility with the selected OVLO and drive voltage requirements.