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Toshiba Semiconductor and Storage TCK423G,L3F
- Part No.:
- TCK423G,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Gate Drivers
- Package:
- 6-XFBGA, WLCSP
- Datasheet:
-
TCK423G,L3F.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 6WCSPG
- Quantity:
- Payment:
- Shipping:
Inventory:9,941
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Product details
Overview
TCK423G,L3F from Toshiba Electronic Devices & Storage Corporation is an over-voltage protection MOSFET gate driver IC designed to control external N-channel MOSFETs in load-switch applications. It operates across 2.7 V to 28 V input, features 14.29 V typical over-voltage lockout (OVLO), delivers 5.6 V gate-source drive, and draws ≤0.9 µA standby current - enabling ultra-low-power mobile and wearable power management systems.
For engineers reviewing the TCK423G,L3F datasheet, TCK423G,L3F pinout, TCK423G,L3F application, or TCK423G,L3F equivalent, this page provides verified technical context, validated pin functions, confirmed operating parameters, and real-world design implications for high-reliability load-switch implementations with N-channel MOSFETs.
Technical Context
The TCK423G,L3F integrates a charge pump to generate a regulated 5.6 V gate drive relative to VIN or VOUT, supporting both common-drain dual-MOSFET and single high-side configurations. Its OVLO threshold is fixed at 14.29 V (typ), with 0.12 V hysteresis, and UVLO activates below 2.0 V (typ).
Control logic responds to VCT: high enables gate drive (tON = 2.9 ms typ), low disables it (tOFF = 16.4 µs typ at 12 V). The device includes gate-source protection circuits and monitors VIN directly - no external sensing required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| OVLO Threshold | 14.29 V (typ); triggers shutdown before external MOSFET exceeds safe VGS or VDS limits under overvoltage transients. |
| VGS Output | 5.6 V (typ); sufficient to fully enhance low-RDS(on) N-channel MOSFETs (e.g., TPN1R603PL) without requiring external bias. |
| Input Voltage Range | 2.7 V to 28 V; supports Li-ion battery packs (3.0–4.2 V), USB PD (5–20 V), and industrial 24 V rails. |
| Standby Current | 0.52 µA max at 12 V; enables multi-year battery life in always-on wearable sensors and IoT endpoints. |
| tOFF | 16.4 µs (typ at 12 V); ensures rapid fault isolation during overvoltage events to protect downstream circuitry. |
| UVLO Threshold | 2.0 V (typ); prevents erratic operation during brownout or cold-start conditions in portable devices. |
| Max Input Voltage | 40 V (absolute); provides margin against voltage spikes up to automotive load-dump levels. |
Pinout & Package
Package: WCSP6G (1.2 mm × 0.8 mm, 0.35 mm max height), wafer-level chip-scale package optimized for space-constrained mobile PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | VGATE1 | Gate drive output for VIN-side MOSFET in common-drain configuration; open-circuit in single-MOSFET mode. |
| B1 | VGATE2 | Primary gate drive output for VOUT-side MOSFET; delivers 5.6 V above VOUT to fully enhance N-channel devices. |
| C1 | VOUT | Output monitoring node; connects to source of VOUT-side MOSFET and serves as reference for VGATE2 drive. |
| A2 | VIN | Main input supply; powers internal circuitry and serves as source reference for VIN-side MOSFET in common-drain topology. |
| B2 | GND | System ground reference; must be low-impedance return path for gate drive current and OVLO/UVLO comparators. |
| C2 | VCT | Active-high enable control; logic-high ≥1.2 V turns on MOSFETs, logic-low ≤0.4 V forces fast gate discharge and shutdown. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated charge pump | Generates stable 5.6 V gate drive independent of input voltage - eliminates need for external boost regulator in 2.7–28 V systems. |
| Gate-source protection | Clamps VGATE1–VIN and VGATE2–VOUT to prevent external MOSFET gate oxide damage during transients or startup. |
| Dual-MOSFET support | Configurable for common-drain (dual N-ch) or single high-side topologies - reduces BOM count and layout complexity. |
| Ultra-low IQ(OFF) | 0.52 µA max at 12 V enables >10-year shelf life in battery-backed medical wearables and asset trackers. |
| Fast OVLO response | tOVP = 16 µs (typ) ensures gate turn-off occurs before overvoltage propagates to load - critical for protecting sensitive SoCs. |
Applications
| Smartphone Power Path | Wireless Earbud Charging Case |
|---|---|
Use Scenario: Isolating main battery from USB-C charging circuit during hot-plug events and reverse-current prevention. IC Role / Device Role / Timing Role: Gate driver controlling dual N-channel MOSFETs in common-drain configuration to enforce unidirectional power flow. Use Value: 14.29 V OVLO prevents overvoltage damage to battery protection ICs during 20 V PD negotiation; 5.6 V VGS ensures <1.5 mΩ RDS(on) conduction loss. |
Use Scenario: Enabling/disabling power to earbud charging contacts only when lid is closed and battery voltage is within safe range. IC Role / Device Role / Timing Role: Single high-side load switch with integrated UVLO/OVLO, controlled by microcontroller GPIO via VCT. Use Value: 0.52 µA standby current extends case battery life beyond 18 months; WCSP6G footprint fits sub-10 mm² PCB area constraints. |
| Industrial Sensor Node | Medical Patch Monitor |
Use Scenario: Protecting 3.3 V MCU and analog front-end from 24 V field bus surges in factory automation nodes. IC Role / Device Role / Timing Role: Overvoltage guard IC placed between 24 V input and DC-DC converter input, with fast tOVP = 16 µs response. Use Value: 40 V absolute max rating absorbs 1 kV/µs transients per IEC 61000-4-4; 2.7–28 V operating range covers wide-input industrial supplies. |
Use Scenario: Managing power delivery to ECG electrodes and Bluetooth radio in disposable wearable patches. IC Role / Device Role / Timing Role: Low-quiescent-load switch enabling zero-power sleep mode while maintaining safe electrode biasing. Use Value: Sub-1 µA OFF-state current preserves CR2032 battery capacity for >90 days continuous monitoring; WCSP6G enables conformal coating compatibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar over-voltage protection gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TCK422G,L3F | Same 14.29 V OVLO but delivers 10 V VGS; higher IQ(ON) (140 µA vs. 140 µA at 12 V) and no IQ(OFF) reduction benefit. | Required where external MOSFETs need >6 V VGS for lowest RDS(on), e.g., high-current motor drivers. | Select TCK422G,L3F only if 10 V gate drive is mandatory; otherwise TCK423G,L3F saves power and cost. |
| TCK424G,L3F | Lower 10.83 V OVLO threshold; identical 5.6 V VGS and standby current specs; same WCSP6G package. | Suitable for 9–12 V systems (e.g., automotive accessory rails) where tighter OVLO margin is needed. | Choose TCK424G,L3F for 12 V nominal inputs with strict transient suppression; TCK423G,L3F better matches 12–24 V industrial rails. |
Compared with TCK422G,L3F and TCK424G,L3F, the TCK423G,L3F uniquely balances 14.29 V OVLO headroom for 24 V systems with 5.6 V gate drive efficiency and sub-1 µA standby - making it optimal for battery-powered 12 V load switches where power budget and surge margin are both critical.
Availability
TCK423G,L3F is available at Aetrix Electronics and suitable for smartphone power path management, wireless earbud charging cases, industrial sensor nodes, medical patch monitors, and other compact, battery-sensitive applications requiring stable component supply and long-term lifecycle assurance.
Supply support for TCK423G,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability semiconductor solutions for consumer, industrial, and automotive markets, with deep expertise in power management and analog ICs.
The TCK42xG series targets ultra-compact, low-power overvoltage protection in space- and energy-constrained systems - specifically engineered for mobile, wearable, and IoT load-switch applications demanding minimal footprint and leakage.
FAQ
What is the exact over-voltage lockout threshold for TCK423G,L3F?
The TCK423G,L3F has a typical over-voltage lockout (OVLO) threshold of 14.29 V, with a guaranteed range of 13.61 V to 14.91 V across –40°C to +85°C. This value is factory-trimmed and applies to the VIN pin; the device shuts down VGATE2 output when VIN exceeds this threshold to protect downstream components.
Does TCK423G,L3F support single N-channel MOSFET configurations?
Yes, the TCK423G,L3F supports single high-side N-channel MOSFET operation: configure VGATE1 as open (non-connected), connect VGATE2 to the MOSFET gate, VOUT to the MOSFET source, and VIN to the drain. The internal charge pump still delivers 5.6 V VGS referenced to VOUT, ensuring reliable enhancement.
What is the maximum gate capacitance the TCK423G,L3F can drive reliably?
The TCK423G,L3F is characterized with 4000 pF total gate capacitance (CGATE1 + CGATE2) and achieves tON = 2.9 ms and tOFF = 16.4 µs at 12 V input. While not explicitly rated beyond this, successful operation has been verified with Toshiba's TPN1R603PL (Ciss ≈ 3200 pF), confirming suitability for most low-to-mid RDS(on) discrete N-channel MOSFETs.
How does the VCT pin function in TCK423G,L3F?
The VCT pin is an active-high digital control input: applying ≥1.2 V (VIH min) enables gate drive (VGATE2 rises to 5.6 V above VOUT), while ≤0.4 V (VIL max) forces immediate gate discharge and disables output. Internal 550 kΩ pull-down ensures safe default-OFF behavior if left unconnected.
Is the WCSP6G package of TCK423G,L3F compatible with standard reflow profiles?
Yes, the WCSP6G package (1.2 mm × 0.8 mm, 0.35 mm max height) is qualified for lead-free reflow per J-STD-020, including peak temperatures up to 260°C. Land pattern dimensions (0.4 mm pitch, Φ0.23 mm solder balls) are provided in Toshiba's package documentation and support standard Type III stencil printing and AOI inspection.
TCK423G,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-XFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 2.7V ~ 28V
- Logic Voltage - VIL, VIH:
- 0.4V, 1.2V
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WCSPG (0.8x1.2)
TCK423G,L3F FAQ
1.How can I place an order for TCK423G,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for TCK423G,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCK423G,L3F reliable?
The price and inventory of TCK423G,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCK423G,L3F is usually 5 days.
3.What payment methods are accepted for TCK423G,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCK423G,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCK423G,L3F?
TCK423G,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCK423G,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCK423G,L3F?
For technical support, including TCK423G,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCK423G,L3F requirements.
6.How does Aetrix verify that TCK423G,L3F is sourced from the original manufacturer or authorized distributors?
All TCK423G,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCK423G,L3F meets industry standards.
7.What is the process for return or replacement of TCK423G,L3F?
All TCK423G,L3F units undergo pre-shipment inspection (PSI). If there is an issue with TCK423G,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCK423G,L3F part is unused and in its original packaging.
Return procedure for TCK423G,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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