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Toshiba Semiconductor and Storage TCK424G,L3F
- Part No.:
- TCK424G,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Gate Drivers
- Package:
- 6-XFBGA, WLCSP
- Datasheet:
-
TCK424G,L3F.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 6WCSPG
- Quantity:
- Payment:
- Shipping:
Inventory:9,995
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Product details
Overview
TCK424G,L3F from Toshiba Electronic Devices & Storage Corporation is an over-voltage protection MOSFET gate driver IC designed to control external N-channel MOSFETs in load-switch applications. It operates across 2.7 V to 28 V input voltage, features 10.83 V typical over-voltage lockout (OVLO), delivers 5.6 V gate-source drive, and draws ≤0.9 µA standby current at 12 V - enabling ultra-low-power mobile and wearable power management systems.
For engineers reviewing the TCK424G,L3F datasheet, TCK424G,L3F pinout, TCK424G,L3F application, or TCK424G,L3F equivalent, this page provides verified technical context, WCSP6G package mapping, confirmed gate-drive timing (tON = 2.9 ms, tOFF = 23 µs), OVLO/UVLO thresholds, and real-world load-switch design guidance for compact battery-powered systems.
Technical Context
The TCK424G,L3F integrates a charge pump to generate a regulated 5.6 V gate-source voltage for external N-channel MOSFETs, supporting both common-drain dual-MOSFET and single high-side configurations. Its control logic responds to VCT input level to enable/disable gate drive while monitoring VIN for precise over-voltage (10.83 V typ) and under-voltage (2.0 V typ) lockout events.
It implements slew-rate-controlled gate turn-on/off with fixed tON (2.9 ms) and fast tOFF (23 µs at 25°C), and includes dedicated VGATE1/VGATE2 outputs plus VOUT monitoring for source-side feedback. The IC's internal protection circuits actively clamp gate-source voltage during fault conditions to prevent MOSFET damage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| OVLO Threshold | 10.83 V typical - triggers shutdown before input exceeds safe operating range for downstream 12 V-rated MOSFETs |
| VGS Output | 5.6 V typical - sufficient to fully enhance low-RDS(on) N-channel MOSFETs while minimizing gate charge time |
| Standby Current | ≤0.9 µA max at VIN = 12 V - enables multi-year battery life in always-on wearable sensors |
| Input Voltage Range | 2.7 V to 28 V - supports Li-ion, USB PD, and industrial 24 V rail operation without external regulators |
| tOFF | 23 µs typical - ensures rapid fault isolation during over-voltage transients |
| UVLO Threshold | 2.0 V typical - prevents erratic switching during brown-out or battery depletion |
| Max Input Voltage | 40 V absolute - provides margin against voltage spikes in automotive or industrial environments |
Pinout & Package
Package: WCSP6G (1.2 mm × 0.8 mm, 0.35 mm max height) - ultra-compact wafer-level chip-scale package optimized for space-constrained mobile PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | VGATE1 | Gate drive output for VIN-side MOSFET in common-drain configuration; open in single-MOSFET mode |
| B1 | VGATE2 | Primary gate drive output for VOUT-side MOSFET; drives gate of high-side switch in single-MOSFET topology |
| C1 | VOUT | Output voltage monitoring node; connects to source of VOUT-side MOSFET or load return path |
| A2 | VIN | Main input power supply connection; also ties to source of VIN-side MOSFET in common-drain layout |
| B2 | GND | System ground reference for internal logic, charge pump, and protection circuitry |
| C2 | VCT | Active-high enable control; logic-high ≥1.2 V turns on MOSFETs, logic-low ≤0.4 V disables gate drive |
Key Features
| Feature | Design Value |
|---|---|
| Integrated charge pump | Generates stable 5.6 V gate drive independent of input voltage - eliminates need for external boost regulator |
| Gate-source protection | Clamps VGATE–VOUT and VGATE–VIN to prevent MOSFET gate oxide breakdown during transient overvoltage |
| Dual-MOSFET support | Simultaneous VGATE1/VGATE2 outputs enable robust common-drain load switch with reverse-current blocking |
| Ultra-low IQ(OFF) | 0.28 µA typical at 5 V VIN - extends shelf life and runtime in battery-backed IoT endpoints |
| Programmable OVLO | Fixed 10.83 V threshold - matches common 12 V system rails while allowing margin for ripple and surge |
Applications
| Smart Wearable Power Switch | USB-C Power Delivery Load Control |
|---|---|
|
Use Scenario: Managing power to BLE radio, display, and sensor subsystems in fitness trackers with coin-cell or thin-film batteries. IC Role / Device Role / Timing Role: Gate driver enabling/disabling high-efficiency N-channel MOSFETs; provides OVLO protection during accidental 5 V adapter insertion. Use Value: 0.9 µA standby current preserves battery capacity over 6+ months; 10.83 V OVLO prevents damage when users connect unregulated chargers. |
Use Scenario: Controlling power delivery to peripheral devices negotiating USB-C PD contracts up to 20 V. IC Role / Device Role / Timing Role: High-side load switch driver with fast 23 µs turn-off to meet USB PD fault response requirements. Use Value: WCSP6G footprint fits tight Type-C connector layouts; 40 V abs max rating handles 20 V PD transients without derating. |
| Industrial Sensor Node Protection | Medical Patch Monitor Power Path |
|
Use Scenario: Isolating 24 V field bus power from sensitive analog front-end circuitry in condition-monitoring nodes. IC Role / Device Role / Timing Role: Over-voltage guard IC that disables MOSFET gate drive within 18 µs of detecting >10.83 V input surge. Use Value: Dual OVLO/UVLO prevents false triggering during line dips; 2.7–28 V operation covers wide industrial input range. |
Use Scenario: Enabling/disabling ECG/PPG signal chain in disposable wireless patient monitors powered by button cells. IC Role / Device Role / Timing Role: Low-quiescent-load switch ensuring <1 µA system leakage when device is in sleep mode. Use Value: Confirmed 0.28 µA IQ(OFF) at 5 V enables >3-year shelf life; small WCSP6G size allows integration near electrode connectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar over-voltage protection gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS22992DNYR | Fixed 5.7 V VGS, 12.5 V OVLO, 0.5 µA IQ(OFF), DSBGA6 package (1.0 × 1.0 mm) | Higher OVLO threshold; lacks dual-gate drive for common-drain topology | Prefer for single-MOSFET 5 V systems requiring tighter OVLO margin and smaller footprint |
| RTQ2132B-QT | Adjustable OVLO (via resistor), 5.5 V VGS, 1.2 µA IQ(OFF), WDFN-6L (2.0 × 2.0 mm) | Configurable protection threshold; larger package; higher standby current | Choose when system requires field-programmable OVLO or automotive AEC-Q200 qualification |
Compared with TCK424G,L3F, TPS22992DNYR offers lower standby current but no dual-gate capability, while RTQ2132B-QT adds flexibility at the cost of size and quiescent power - making TCK424G,L3F optimal for space- and battery-limited dual-MOSFET designs needing fixed 10.83 V protection.
Availability
TCK424G,L3F is available at Aetrix Electronics and suitable for mobile power management, wearable health monitoring, and USB-C peripheral load switching requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for TCK424G,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability analog and power semiconductors for consumer, industrial, and automotive markets, with emphasis on miniaturization and energy efficiency.
The TCK42xG series targets ultra-compact, low-power load-switch applications - specifically engineered to replace discrete protection circuits with integrated gate drivers, OVLO/UVLO, and charge pumps in space-constrained portable electronics.
FAQ
What is the exact over-voltage lockout threshold for TCK424G,L3F?
The TCK424G,L3F has a typical over-voltage lockout (OVLO) threshold of 10.83 V, with guaranteed range of 10.35 V to 11.47 V across –40°C to +85°C. This value is factory-trimmed and applies specifically to the TCK424G variant - other TCK42xG parts have different OVLO points (e.g., TCK425G = 6.31 V).
Does TCK424G,L3F support single-MOSFET or only dual-MOSFET configurations?
TCK424G,L3F supports both configurations: in single-MOSFET mode, VGATE1 is left unconnected (open), and VGATE2 drives the gate of a high-side N-channel MOSFET with source tied to VOUT; in common-drain mode, VGATE1 and VGATE2 independently drive two MOSFETs sharing a drain node - confirmed in Toshiba's Application Note section 12.1 and 12.2.
What is the gate drive voltage (VGS) delivered by TCK424G,L3F?
The TCK424G,L3F delivers a typical gate-source voltage (VGS) of 5.6 V, with guaranteed range of 4.9 V to 6.3 V across input voltages from 2.7 V to 12 V and temperature range –40°C to +85°C - sufficient to fully enhance standard logic-level N-channel MOSFETs like TPN1R603PL used in Toshiba reference designs.
How fast does TCK424G,L3F turn off the external MOSFET?
TCK424G,L3F achieves a typical VGS turn-off time (tOFF) of 23 µs at 25°C with VIN = 5 V and 4000 pF gate capacitance - verified in Electrical Characteristics Table 11.2. At 12 V input, tOFF reduces to 16.4 µs (Table 11.3), enabling rapid fault isolation in over-voltage events.
Is the WCSP6G package of TCK424G,L3F compatible with standard reflow profiles?
Yes - the WCSP6G package (1.2 mm × 0.8 mm, 0.35 mm max height) is qualified for standard lead-free reflow per J-STD-020, with peak temperature up to 260°C. Land pattern dimensions and solder mask recommendations are provided in Toshiba's Package Information (Page 22), and thermal performance is validated on FR4 boards per Absolute Maximum Ratings Note 1.
TCK424G,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-XFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 2.7V ~ 28V
- Logic Voltage - VIL, VIH:
- 0.4V, 1.2V
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WCSPG (0.8x1.2)
TCK424G,L3F FAQ
1.How can I place an order for TCK424G,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for TCK424G,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCK424G,L3F reliable?
The price and inventory of TCK424G,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCK424G,L3F is usually 5 days.
3.What payment methods are accepted for TCK424G,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCK424G,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCK424G,L3F?
TCK424G,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCK424G,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCK424G,L3F?
For technical support, including TCK424G,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCK424G,L3F requirements.
6.How does Aetrix verify that TCK424G,L3F is sourced from the original manufacturer or authorized distributors?
All TCK424G,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCK424G,L3F meets industry standards.
7.What is the process for return or replacement of TCK424G,L3F?
All TCK424G,L3F units undergo pre-shipment inspection (PSI). If there is an issue with TCK424G,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCK424G,L3F part is unused and in its original packaging.
Return procedure for TCK424G,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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