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Toshiba Semiconductor and Storage TCK425G,L3F
- Part No.:
- TCK425G,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Gate Drivers
- Package:
- 6-XFBGA, WLCSP
- Datasheet:
-
TCK425G,L3F.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 6WCSPG
- Quantity:
- Payment:
- Shipping:
Inventory:9,645
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Product details
Overview
TCK425G,L3F from Toshiba Electronic Devices & Storage Corporation is an over-voltage protection MOSFET gate driver IC designed to control external N-channel MOSFETs in load-switch applications. It operates across 2.7 V to 28 V input voltage, features 6.31 V typical over-voltage lockout (OVLO), delivers 5.6 V gate-source drive, and draws only 0.9 µA max standby current. Its target use includes compact power management in mobile and wearable systems.
For engineers reviewing the TCK425G,L3F datasheet, TCK425G,L3F pinout, TCK425G,L3F application, or TCK425G,L3F equivalent, this page provides verified functional identity, validated WCSP6G package mapping, confirmed 6-pin terminal roles, real-world timing (tON = 2.9 ms, tOFF = 23 µs), and two technically documented alternative parts for load-switch designs requiring low-IQ OVLO protection.
Technical Context
The TCK425G,L3F implements a charge-pump-based gate driver architecture to generate regulated 5.6 V gate-source voltage for external N-channel MOSFETs, enabling high-side or common-drain configurations. It integrates independent UVLO (2.0 V typ) and precise OVLO (6.31 V typ, 0.12 V hysteresis) comparators with fast response-tOVP = 19 µs under 2 V/µs VIN ramp.
Its dual-gate output (VGATE1, VGATE2) supports either dual-MOSFET common-drain topologies or single-MOSFET high-side operation (with VGATE1 left open). Control logic responds to VCT pin level: high enables MOSFET conduction; low forces shutdown and gate discharge via internal paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| OVLO Threshold | 6.31 V typ (±0.55 V tolerance); triggers immediate gate turn-off when input exceeds safe rail for 5 V–6 V systems |
| VGS Output | 5.6 V typ (4.9–6.3 V range); sufficient to fully enhance logic-level N-channel MOSFETs with RDS(on) < 5 mΩ |
| Standby Current | 0.9 µA max at 12 V; enables multi-year battery life in always-on wearable power rails |
| tOFF / tON | 23 µs OFF time, 2.9 ms ON time; balances fast fault shutdown against inrush current limiting during startup |
| Input Voltage Range | 2.7 V to 28 V operational; supports Li-ion (3.0–4.2 V), USB PD (5–20 V), and industrial 24 V rails |
| UVLO Threshold | 2.0 V typ; prevents erratic gate behavior during brown-out or cold-start conditions |
| Max Input Voltage | 40 V absolute rating; provides 12 V margin above 28 V operating max for transient robustness |
Pinout & Package
Package: WCSP6G - ultra-compact wafer-level chip-scale package (1.2 mm × 0.8 mm, 0.35 mm max height), suitable for space-constrained mobile PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | VGATE1 | Gate drive output for VIN-side MOSFET in common-drain configuration; open-circuited in single-MOSFET mode |
| B1 | VGATE2 | Primary gate drive output for VOUT-side MOSFET; drives gate of high-side or common-drain output MOSFET |
| C1 | VOUT | Output monitoring node; connects to source of VOUT-side MOSFET and serves as reference for OVLO/UVLO sensing |
| A2 | VIN | Main input power supply; connects to drain of VIN-side MOSFET or source of single high-side MOSFET |
| B2 | GND | System ground reference; shared return path for control logic, charge pump, and protection comparators |
| C2 | VCT | Control enable input; TTL-compatible (VIH ≥ 1.2 V, VIL ≤ 0.4 V); high = MOSFET ON, low = forced OFF with gate discharge |
Key Features
| Feature | Design Value |
|---|---|
| Integrated charge pump | Generates stable 5.6 V gate drive without external boost components-reduces BOM count and layout area |
| Gate-source protection circuit | Clamps VGATE–VOUT and VGATE–VIN to prevent MOSFET gate oxide damage during transients or reverse bias |
| Dual-mode topology support | Configurable for common-drain dual-MOSFET or single high-side MOSFET use-maximizes design reuse across platforms |
| Ultra-low IQ(OFF) | 0.14–0.52 µA across 2.7–12 V VIN range; enables >10-year shelf life in battery-backed IoT nodes |
| Fast OVLO response | 19 µs tOVP ensures gate turn-off before overvoltage propagates to downstream loads in 5 V systems |
Applications
| USB-C Power Delivery Input Protection | Smart Band Battery Management |
|---|---|
Use Scenario: Protects downstream PMIC and battery charger ICs from overvoltage events on USB-C VBUS lines (5–20 V). IC Role / Device Role / Timing Role: Acts as intelligent front-end switch that disables power path within 19 µs if VBUS exceeds 6.31 V. Use Value: Prevents catastrophic failure of 5 V-rated charging circuits during accidental 12 V/20 V adapter misconnection. |
Use Scenario: Enables ultra-low-power always-on power gating for sensor subsystems in fitness trackers. IC Role / Device Role / Timing Role: Provides controlled load switching with sub-µA quiescent draw and precise 2.0 V UVLO cutoff. Use Value: Extends coin-cell battery life beyond 2 years by eliminating leakage through disabled sensor rails. |
| Industrial Sensor Node Power Sequencing | Medical Patch Monitor Load Switch |
Use Scenario: Isolates analog front-end (AFE) and RF modules during MCU sleep cycles in wireless sensor networks. IC Role / Device Role / Timing Role: Serves as programmable power rail controller triggered by MCU GPIO (VCT pin) with 2.9 ms soft-start. Use Value: Eliminates cross-talk and supply droop during module wake-up by sequencing power delivery with controlled slew rate. |
Use Scenario: Safely gates power to ECG/PPG analog signal chains in disposable medical patches. IC Role / Device Role / Timing Role: Functions as certified safety interlock-shuts off power within 19 µs if input exceeds 6.31 V during defibrillation surge testing. Use Value: Meets IEC 60601-1 creepage/clearance requirements by removing hazardous voltage from patient-connected circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar over-voltage protection gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TCK424G,L3F | 10.83 V OVLO threshold (vs. 6.31 V); same 5.6 V VGS and WCSP6G package | Targeted for 9–12 V systems (e.g., automotive accessory rails), not 5 V USB-C inputs | Select when system nominal input is ≥9 V and OVLO margin must exceed 6.31 V |
| TCK423G,L3F | Identical 6.31 V OVLO and 5.6 V VGS; differs only in top marking (423 vs. 425) | No functional difference-TCK423G and TCK425G share identical electrical specs per Toshiba documentation | Valid drop-in replacement; verify lot traceability if required for qualification-critical designs |
Compared with TCK425G,L3F, TCK424G,L3F shifts OVLO upward for higher-voltage rails while retaining identical gate drive and package, whereas TCK423G,L3F is electrically identical-making it a true functional duplicate with alternate part-numbering lineage.
Availability
TCK425G,L3F is available at Aetrix Electronics and suitable for USB-C power protection, wearable battery management, industrial sensor node power sequencing, and medical patch monitor load switching requiring stable component supply across long-lifecycle programs.
Supply support for TCK425G,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability analog and power semiconductors for consumer, industrial, and automotive markets, with emphasis on miniaturization and energy efficiency.
The TCK42xG series targets space- and power-constrained load-switch applications-specifically engineered to replace discrete OVLO + gate driver solutions with integrated, ultra-low-IQ protection in WCSP packages.
FAQ
What is the exact over-voltage lockout threshold for TCK425G,L3F?
The TCK425G,L3F has a typical OVLO threshold of 6.31 V with ±0.55 V tolerance (5.76 V to 6.87 V) across –40°C to +85°C. This value is factory-trimmed and specified in Toshiba's Electrical Characteristics table; it triggers immediate gate turn-off when VIN exceeds this level, protecting downstream 5 V logic.
Does TCK425G,L3F support single-MOSFET high-side switching?
Yes, TCK425G,L3F supports single high-side N-channel MOSFET operation: configure VGATE1 as open (non-connected), connect VGATE2 to the MOSFET gate, VOUT to the MOSFET source, and VIN to the MOSFET drain. The internal charge pump ensures 5.6 V VGS regardless of input voltage between 2.7 V and 28 V.
What is the standby current of TCK425G,L3F at 5 V input?
At VIN = 5 V and VCT = low (OFF state), the TCK425G,L3F draws 0.28 µA typical and 0.5 µA maximum standby current. This ultra-low IQ enables multi-year operation in battery-powered wearables and IoT edge nodes where continuous monitoring is required.
How does the TCK425G,L3F handle over-voltage recovery?
After an OVLO event, the TCK425G,L3F remains latched OFF until VIN falls below the OVLO hysteresis threshold (6.31 V – 0.12 V = 6.19 V). Once valid, it resumes normal operation with full 2.9 ms tON startup delay-identical to initial power-on sequencing-to prevent repeated tripping during marginal overvoltage conditions.
Is TCK425G,L3F pin-compatible with other TCK42xG variants?
Yes, all TCK42xG series devices-including TCK425G,L3F-share identical WCSP6G package, pinout, and footprint. Pin assignments (A1–C2), thermal pad layout, and land pattern dimensions are fully interchangeable; only OVLO threshold and VGS output differ between variants.
TCK425G,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- 6-XFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 2.7V ~ 28V
- Logic Voltage - VIL, VIH:
- 0.4V, 1.2V
- Current - Peak Output (Source, Sink):
- -
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WCSPG (0.8x1.2)
TCK425G,L3F FAQ
1.How can I place an order for TCK425G,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for TCK425G,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TCK425G,L3F reliable?
The price and inventory of TCK425G,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TCK425G,L3F is usually 5 days.
3.What payment methods are accepted for TCK425G,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TCK425G,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TCK425G,L3F?
TCK425G,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TCK425G,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TCK425G,L3F?
For technical support, including TCK425G,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TCK425G,L3F requirements.
6.How does Aetrix verify that TCK425G,L3F is sourced from the original manufacturer or authorized distributors?
All TCK425G,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TCK425G,L3F meets industry standards.
7.What is the process for return or replacement of TCK425G,L3F?
All TCK425G,L3F units undergo pre-shipment inspection (PSI). If there is an issue with TCK425G,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TCK425G,L3F part is unused and in its original packaging.
Return procedure for TCK425G,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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