STMicroelectronics TD350E

Overview

TD350E from STMicroelectronics is an advanced IGBT and power MOSFET gate driver IC with integrated desaturation detection, active Miller clamp, two-level turn-off, fault status output, and ±10 V dual supply capability. It delivers 1.5 A source / 2.3 A sink gate drive (typ.), supports bootstrap high-side operation, and targets high-reliability 1200 V three-phase inverter systems.

For engineers reviewing the TD350E datasheet, TD350E pinout, TD350E application, or TD350E equivalent, key selection criteria include desaturation threshold accuracy (7.2 V typ.), programmable two-level turn-off delay (via COFF/LVOFF), Miller clamp activation at 2.0 V, UVLO hysteresis (1 V), and SO-14 package thermal resistance (125 °C/W).

Technical Context

The TD350E implements a dual-output gate driver architecture with independent OUTH (source) and OUTL (sink) terminals, enabling precise control of IGBT/MOSFET gate charge/discharge without external diodes. Its active Miller clamp activates when gate voltage falls below 2.0 V (relative to GND), clamping at VL + 3.0 V max for up to 500 mA Miller current.

Two-level turn-off uses an external COFF capacitor and LVOFF resistor to set delay (Ta ≈ 0.7 × Roff × Coff μs) and threshold level, simultaneously protecting against overvoltage during short-circuit events and preventing input pulse width distortion by applying the same delay at turn-on. Desaturation detection triggers at 7.2 V (typ.) on DESAT pin with internal blanking via external capacitor.

Key Specifications

Pinout & Package

TD350E is housed in a standard SO-14 surface-mount package (8.55–8.75 mm × 3.80–4.00 mm, 1.27 mm pitch), rated for –40 °C to +125 °C operation and featuring 125 °C/W junction-to-ambient thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT gate driver applications.

Compared with IR2110S and UCC21520DW, TD350E uniquely integrates desaturation protection, active Miller clamp, and two-level turn-off in a single SO-14 package-reducing component count, PCB area, and validation effort for non-isolated 1200 V inverter designs.

Availability

TD350E is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), three-phase inverters, and industrial welding equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TD350E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade components.

The TD350E belongs to ST's high-voltage gate driver product line, engineered specifically for robust, integrated protection in non-isolated IGBT-based motor control and power conversion systems operating up to 1200 V.

FAQ

What is the purpose of the CLAMP pin on the TD350E?

The CLAMP pin (Pin 9) provides an active Miller clamp output that activates when the IGBT gate voltage drops below 2.0 V relative to GND. It drives an external N-channel MOSFET to short the gate to VL during high dV/dt turn-off events, suppressing false turn-on without requiring a negative gate supply-enabling simpler bootstrap-based high-side driver designs.

How does the two-level turn-off function protect the IGBT during short-circuit conditions?

During overcurrent, the two-level turn-off reduces gate voltage to a programmable intermediate level (set via LVOFF) after a user-defined delay (set via COFF). This throttles IGBT current gradually instead of hard turn-off, limiting peak collector-emitter voltage and preventing RBSOA violation. The same delay is applied at turn-on to avoid pulse width distortion in PWM signals.

Can the TD350E be used with a single positive supply (no negative VL rail)?

Yes - the active Miller clamp eliminates the need for a negative VL supply in most applications. With VH = +15 V and VL tied to GND (0 V), the clamp still functions at VL + 2.5 V = +2.5 V threshold, and the driver maintains full 1.5 A/2.3 A drive capability. However, negative VL (e.g., –5 V to –10 V) improves noise immunity and turn-off speed in high-noise environments.

What external components are required for basic desaturation protection?

A single RC network is required: a 10 kΩ resistor from IGBT collector to DESAT pin, and a 100 nF capacitor from DESAT to GND. This sets ~1 μs blanking time and scales the collector voltage to match the 7.2 V internal threshold. No external comparator, reference, or latch is needed-the TD350E handles detection, timing, and FAULT assertion internally.