STMicroelectronics TD350ETR

Overview

TD350ETR from STMicroelectronics is an advanced IGBT and power MOSFET gate driver IC with 1.5 A source / 2.3 A sink typical gate drive strength, active Miller clamp, two-level turn-off with adjustable delay (via external R/C), desaturation detection, and fault status output. It operates across –40 °C to +125 °C, supports ±10 V gate drive swing, and targets high-reliability 1200 V three-phase inverter systems.

For engineers reviewing the TD350ETR datasheet, TD350ETR pinout, TD350ETR application, or TD350ETR equivalent, key selection criteria include its dual-sink/source output architecture, programmable two-level turn-off timing, integrated desat protection threshold (7.2 V typ.), and SO-14 package compatibility with bootstrap high-side supply topologies.

Technical Context

The TD350ETR implements a dual-output gate driver with independent OUTH (source) and OUTL (sink) terminals enabling precise control of IGBT/MOSFET gate charge/discharge without external diodes. Its active Miller clamp activates at ~2.0 V gate voltage (relative to GND) and clamps to VL+3.0 V max, eliminating need for negative gate supply in most applications.

Two-level turn-off uses an external COFF–Rdel network to set delay Ta (≈0.7·Roff·Coff μs), applied identically during turn-on to prevent pulse width distortion. Desaturation detection triggers at 7.2 V (typ.) on DESAT pin with internal blanking, and fault status is signaled via open-drain FAULT output compatible with optocoupler interfaces.

Key Specifications

Pinout & Package

TD350ETR is housed in a 14-pin SOIC (SO-14) package with standard 1.27 mm pitch, 8.75 mm × 4.00 mm body, and 1.65 mm max height - suitable for automated SMT assembly and thermal management in motor drive PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT gate driver applications.

Compared with IR2110PbF and UCC21520DW, TD350ETR uniquely balances programmable two-level turn-off, active Miller clamp, and desat protection in a non-isolated SO-14 package-making it optimal for cost-constrained, reliability-critical 1200 V IGBT inverters where fault response granularity matters more than raw speed or isolation.

Availability

TD350ETR is available at Aetrix Electronics and suitable for industrial motor drives, UPS inverter stages, solar string inverters, and electric vehicle onboard chargers requiring stable component supply and long-term production support.

Supply support for TD350ETR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and automotive-grade components since 1987.

The TD350E belongs to ST's high-voltage gate driver product line, engineered specifically for robust, fault-resilient control of 600–1200 V IGBTs and MOSFETs in industrial energy conversion systems.

FAQ

What is the purpose of the CLAMP pin on TD350ETR?

The CLAMP pin provides active Miller current control during high dV/dt transitions. When the gate voltage falls below ~2.0 V relative to GND, CLAMP sinks up to 500 mA to hold the gate near VL+2.5 V, preventing false turn-on without requiring a negative gate supply. It automatically disables upon next IN trigger.

How is the two-level turn-off delay configured?

The two-level turn-off delay (Ta) is set externally using capacitor COFF (pin 5) and the internal discharge resistor Rdel (500 Ω). Ta ≈ 0.7 × Roff (kΩ) × Coff (nF) μs. This same delay applies to turn-on to avoid pulse width distortion, and minimum input pulse width must exceed Ta + 2×Rdel×Coff to prevent partial turn-on.

Can TD350ETR drive both IGBTs and Si MOSFETs?

Yes - TD350ETR is explicitly qualified for both IGBTs and power MOSFETs. Its 1.5 A source / 2.3 A sink drive strength, ±10 V gate swing capability, and desaturation detection (with external RC scaling) support discrete and module-based IGBTs up to 1200 V and high-current Si MOSFETs in hard-switched topologies.

What does the FAULT output signal indicate?

The FAULT output is an open-drain signal that goes low during desaturation events (DESAT >7.2 V), undervoltage lockout (VH <9 V), or internal fault conditions. It remains asserted until the next falling edge of the IN signal, enabling synchronous fault clearing in microcontroller-based control loops.