STMicroelectronics TD350IDT

Overview

TD350IDT from STMicroelectronics is an advanced high-side/low-side IGBT and power MOSFET gate driver in SO-14 package, featuring 1.5 A source / 2.3 A sink typical gate drive strength, active Miller clamp, two-step turn-off with adjustable delay and level, desaturation detection, and -10 V negative gate drive capability. It enables robust 1200 V three-phase inverter designs for motor control and UPS systems.

For engineers reviewing the TD350IDT datasheet, TD350IDT pinout, TD350IDT application, or TD350IDT equivalent, key selection criteria include its dual-sink/source output architecture, programmable desat blanking via COFF capacitor, ±10 V gate supply range (VH–VL ≤ 26 V), and fault status signaling compatible with optocoupler-based controllers.

Technical Context

The TD350IDT integrates a dedicated desaturation comparator (7.2 V threshold), internal 2.5 V reference for off-level timing, and independent OUTH (source) and OUTL (sink) outputs enabling precise gate charge/discharge control without external diodes. Its active Miller clamp activates at 2.0 V gate voltage (vs. GND) and sustains up to 500 mA clamp current at VL+3.0 V max.

Two-level turn-off uses external COFF capacitor and LVOFF resistor to set delay (Ta) and off-level; same Ta delay applies to turn-on to prevent pulse width distortion. UVLO protection triggers at 10 V (typ.) with 1 V hysteresis, disabling OUTH and pulling OUTL low during undervoltage.

Key Specifications

Pinout & Package

TD350IDT is housed in a 14-pin SOIC (SO-14) package with ECOPACK® compliance, 1.27 mm pitch, and 8.75 mm × 6.2 mm body dimensions. Pin 1 is marked by a beveled corner or dot; pin 4 and 6 are NC (no connect).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT gate driver applications.

Compared with IR2110PbF, TD350IDT delivers superior short-circuit protection and reduced external component count; versus UCC21520DW, it offers IGBT-optimized features like adjustable off-level and integrated VREF-critical for stable timing in high-noise motor drive environments.

Availability

TD350IDT is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and renewable energy inverters requiring stable component supply and long-term obsolescence management.

Supply support for TD350IDT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power ICs, sensors, and analog devices for industrial, automotive, and consumer markets.

TD350IDT belongs to ST's high-voltage gate driver product line, engineered specifically for ruggedized IGBT control in 1200 V three-phase inverter systems demanding integrated protection, Miller immunity, and bootstrap-friendly operation.

FAQ

Can TD350IDT drive SiC MOSFETs?

TD350IDT is optimized for IGBTs and silicon MOSFETs, not SiC devices. Its 1.5 A source drive and 7.2 V desat threshold lack the speed and precision required for SiC's low gate charge and fast switching. SiC gate drivers require < 50 ns propagation delay and 10–20 V gate drive swing - specifications outside TD350IDT's design envelope per ST Doc ID 9525 Rev 6.

What is the maximum recommended COFF capacitor value?

The datasheet specifies COFF capacitor range as "not specified" but implies practical limit via timing equations: Twinmin = Ta + 2×Rdel×Coff, where Rdel = 500 Ω. To avoid excessive pulse distortion, COFF should be ≤ 10 nF for Ta ≤ 500 ns. ST application note AN2912 recommends 1–4.7 nF for 1–5 µs delay range in 1200 V inverters.

Does TD350IDT support bootstrap high-side configuration?

Yes - TD350IDT's active Miller clamp and negative gate drive capability (VL pin) allow reliable bootstrap operation without external negative bias. The clamp activates below 2.0 V gate voltage, suppressing Miller-induced turn-on during high dV/dt, making it suitable for high-side IGBTs in 3-phase bridge configurations per Figure 14 in ST Doc ID 9525 Rev 6.

Is TD350IDT pin-compatible with newer ST gate drivers like STL210?

No - TD350IDT (SO-14) has no pin compatibility with STL210 (SO-8) or other modern ST drivers. Pin functions differ significantly: STL210 lacks CLAMP, LVOFF, COFF, and VREF pins, and integrates desat blanking internally. Migration requires PCB redesign and firmware adaptation per ST Application Note AN5017.