STMicroelectronics TD352ID

Overview

TD352ID from STMicroelectronics is an advanced high-side/low-side IGBT and MOSFET gate driver in SO-8 package, featuring 1.7 A sink / 1.3 A source peak output current, active Miller clamp, desaturation detection, adjustable turn-on delay (programmable via external R/C), and UVLO protection. It enables robust 1200 V three-phase inverter designs with bootstrap high-side supply.

For engineers reviewing the TD352ID datasheet, TD352ID pinout, TD352ID application, or TD352ID equivalent, key selection criteria include Miller clamp threshold (2.0 V), desaturation trip point (VH − 2 V), turn-on delay accuracy (±10% typical), and SO-8 thermal resistance (150 °C/W) for motor control and UPS systems.

Technical Context

The TD352ID integrates a dedicated active Miller clamp circuit that sinks up to 500 mA at VL+4 V max to suppress gate voltage spikes during IGBT off-state, eliminating need for negative gate drive. Its desaturation protection uses an internal 250 µA current source and external capacitor to set blanking time (e.g., ~0.056 µs/pF at VH = 16 V).

Turn-on delay is generated by charging an external capacitor CD through an internal 500 Ω discharge resistor (Rdel), yielding Ta ≈ 0.7 × Rd(kΩ) × Cd(nF); UVLO has 1 V hysteresis (10–11 V trip range) and forces OUT low during undervoltage, while VREF provides a stable 5.0 V ±0.15 V reference for timing and noise rejection.

Key Specifications

Pinout & Package

TD352ID is housed in a standard SO-8 surface-mount package (ECOPACK® compliant), with 1.27 mm pitch, 4.9 mm × 3.9 mm body, and 150 °C/W junction-to-ambient thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT gate driver applications.

Compared with IR2110PbF and UCC27324DR, TD352ID uniquely combines Miller clamping, desat detection, and programmable delay in a single SO-8 IC-reducing BOM count and enabling robust 1200 V inverter designs without auxiliary supplies or discrete protection circuits.

Availability

TD352ID is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and solar inverters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TD352ID includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

The TD352ID belongs to ST's high-voltage gate driver product line, engineered specifically for reliable, high-efficiency IGBT and MOSFET control in 1200 V industrial power conversion systems.

FAQ

What is the purpose of the CLAMP pin on TD352ID?

The CLAMP pin provides an active low-impedance path from the IGBT gate to VL during the off-state, suppressing Miller-induced voltage spikes. It activates when gate voltage falls below 2.0 V relative to VL and sustains ≤ VL + 4 V at up to 500 mA, eliminating need for negative gate drive in most applications.

How is desaturation protection configured and reset?

DESAT protection is configured using an external resistor divider from IGBT collector to VH and to DESAT pin; it trips when voltage exceeds VH − 2 V. The fault state is latched and can only be cleared by cycling power (VH down then up), ensuring persistent shutdown until manual intervention or system reset.

Can TD352ID drive both IGBTs and MOSFETs?

Yes - TD352ID is explicitly designed for both IGBTs and power MOSFETs. Its 1.7 A sink / 1.3 A source output current, Miller clamp, and desaturation detection suit high-dV/dt IGBT switching, while its logic-level input thresholds and fast 100 ns rise/fall times also support high-frequency MOSFET operation.

What is the recommended capacitor value for the CD pin to achieve 1 µs turn-on delay?

To achieve ~1 µs turn-on delay, use Rd = 10 kΩ and Cd = 143 pF, per Ta (µs) ≈ 0.7 × Rd (kΩ) × Cd (nF). For stability and noise immunity, Cd should be a C0G/NP0 ceramic capacitor; values between 100 pF and 1 nF are typical for µs-range delays.