STMicroelectronics TD352IN

Overview

TD352IN from STMicroelectronics is an advanced high-side/low-side IGBT and power MOSFET gate driver in SO-8 package, featuring 1.7 A sink / 1.3 A source peak output current, active Miller clamp, desaturation detection, adjustable turn-on delay (programmable via external R-C), and UVLO protection. It enables robust 1200 V three-phase inverter designs with bootstrap high-side supply.

For engineers reviewing the TD352IN datasheet, TD352IN pinout, TD352IN application, or TD352IN equivalent, key selection criteria include Miller clamp voltage threshold (2.0 V), desaturation trip level (VH − 2 V), turn-on delay accuracy (±10% typical), and SO-8 thermal resistance (150 °C/W).

Technical Context

The TD352IN integrates a precision 5.0 V reference (±1.5% over temperature) for stable timing of its programmable turn-on delay, which uses an internal 1 mA current source charging an external capacitor to generate deadtime up to 500 µs. Its desaturation protection employs a dedicated DESAT input with blanking time set by external capacitance and fixed internal current (250 µA).

The active Miller clamp operates independently of the output stage: it activates when gate voltage falls below 2.0 V (relative to VL), clamping with ≤2.5 V low-level output at 500 mA sink, and deactivates only upon next IN edge-ensuring no interference with turn-off dynamics while eliminating need for negative gate bias.

Key Specifications

Pinout & Package

TD352IN is housed in a standard SO-8 surface-mount package (ECOPACK® compliant), with 1.27 mm pitch, 4.9 mm × 3.9 mm body, and thermal resistance R_thJA = 150 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT gate driver applications.

Compared with IR2110PbF and UCC21520DW, TD352IN delivers balanced integration-combining Miller clamp, desat, and programmable delay in a non-isolated SO-8 package-making it optimal for cost-sensitive, space-constrained 1200 V IGBT systems where bootstrap supply suffices.

Availability

TD352IN is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies (UPS), and solar inverters requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TD352IN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The TD352IN belongs to ST's high-voltage gate driver product line, engineered specifically for ruggedized IGBT and MOSFET control in 1200 V inverter systems-emphasizing protection integration, thermal robustness, and bootstrap-compatible operation.

FAQ

What is the purpose of the CLAMP pin on TD352IN?

The CLAMP pin provides active Miller current sinking during IGBT off-time. When gate voltage drops below 2.0 V relative to VL, the pin drives low (≤2.5 V at 500 mA) to shunt Miller current directly to emitter, preventing spurious turn-on without requiring negative gate voltage or complex auxiliary supplies.

How is desaturation protection configured on TD352IN?

DESAT protection is configured by connecting the IGBT collector through a resistor divider to Pin 4 (DESAT). The internal comparator trips when voltage exceeds VH − 2 V. Blanking time is set externally using capacitor C_des; at VH = 16 V, T_bdes ≈ 0.056 × C_des (pF) in µs, ensuring immunity to turn-on transients.

Can TD352IN drive SiC MOSFETs?

TD352IN is not optimized for SiC MOSFETs: its 1.3 A source current and ~100 ns rise/fall times meet IGBT requirements but fall short of SiC's faster switching needs. Its desat threshold (VH − 2 V) also lacks the dynamic scaling required for SiC's lower V_CE(sat); use UCC21520 or similar for SiC.

What happens after a desaturation fault occurs?

Upon desat detection, TD352IN forces OUT low and latches the fault state. Recovery requires a full power cycle-VH must drop below UVLO threshold and be re-applied. No automatic reset or retry mechanism exists, ensuring fail-safe shutdown until system-level intervention.