NXP Semiconductors TEA2209T/1Y

Overview

TEA2209T/1Y from NXP Semiconductors is an active bridge rectifier controller IC designed to replace conventional diode bridges in AC-DC power supplies. It drives four external high-voltage MOSFETs, eliminates forward conduction losses of passive diodes, achieves up to 1.4 % efficiency gain at 90 V_AC, and integrates X-capacitor discharge (2 mA) and self-supply functionality for boost-type PFC front-end stages.

For engineers reviewing the TEA2209T/1Y datasheet, TEA2209T/1Y pinout, TEA2209T/1Y application, or TEA2209T/1Y equivalent, this page delivers verified technical context, SO16 package mapping, gate driver specifications (200 mA source/sink), undervoltage lockout thresholds (4.2 V typ), and real-world use cases in desktop PC, TV, and server power supplies.

Technical Context

The TEA2209T/1Y implements full-wave synchronous rectification using dual high-side/low-side gate drivers per bridge leg, with integrated level shifters enabling direct drive of all four external MOSFETs. Its control logic senses mains polarity via pins L and R with ±250 mV zero-crossing comparator thresholds and supports disable via COMP pin with 1.3 V threshold and 350 mV hysteresis.

It operates in three states-start-up, charge, and discharge-with internal bias currents managing VCC supply (2.2 µF typical capacitor) and initiating X-capacitor discharge at 2 mA when VCC drops below 1.5 V. Protection includes drain-source overvoltage shutdown (VVCC − 2 V for low-side; VVCCHL/VVCCHR − 3.5 V for high-side) and gate pull-down during UVLO.

Key Specifications

Pinout & Package

TEA2209T/1Y is housed in a plastic small outline package (SO16) per SOT109-1 standard: 16-pin, 3.9 mm body width, 1.27 mm pitch, and 1.75 mm max height. The package supports surface-mount assembly and thermal dissipation via junction-to-case resistance of 46 K/W (free air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar active bridge rectifier controller applications.

Compared with STNRG011TR and ICE5QSBG, the TEA2209T/1Y offers superior efficiency (2 mW vs. 1.5 W IC loss), certified X-cap discharge (2 mA), and full external MOSFET control flexibility-making it optimal for high-efficiency, high-reliability 100–500 W industrial and computing PSUs.

Availability

TEA2209T/1Y is available at Aetrix Electronics and suitable for desktop PC power supplies, television power supplies, and server front-end converters requiring stable component supply, long-term lifecycle support, and compliance with IEC 62368-1 safety standards.

Supply support for TEA2209T/1Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.

The TEA2209T/1Y belongs to NXP's high-efficiency power management IC portfolio, engineered specifically for active bridge rectification in universal-input AC-DC converters with boost-type PFC front-ends.

FAQ

What is the primary function of the TEA2209T/1Y in a power supply?

The TEA2209T/1Y serves as an active bridge rectifier controller that replaces traditional diode bridges in AC-DC power supplies. It directly drives four external high-voltage MOSFETs to perform synchronous full-wave rectification, eliminating forward conduction losses and improving system efficiency by up to 1.4 % at 90 V_AC. Its design targets boost-type PFC front-end stages in adapters, desktop PCs, TVs, and servers.

How does the TEA2209T/1Y achieve self-supply operation?

The TEA2209T/1Y generates its internal VCC supply from the rectified mains voltage applied to pin VR. An internal 2 mA current source charges the external 2.2 µF supply capacitor during the charge state, regulating VCC to 10.7 V. This eliminates the need for auxiliary windings or separate bias supplies, simplifying transformer design and reducing component count in the TEA2209T/1Y-based power supply.

What protection features are built into the TEA2209T/1Y?

The TEA2209T/1Y integrates multiple hardware-level protections: undervoltage lockout (UVLO) on VCC (3.6–4.9 V range), drain-source overvoltage shutdown for all external MOSFETs (VVCC − 2 V for low-side; VVCCHL/VVCCHR − 3.5 V for high-side), and gate pull-down circuits that discharge MOSFET gates to <2 V during UVLO. These ensure safe start-up, fault recovery, and reliability under transient and overload conditions.

Can the TEA2209T/1Y be disabled to reduce no-load power consumption?

Yes, the TEA2209T/1Y supports active disable via its COMP pin. With COMP_POL grounded, a low signal (<1.3 V) on COMP disables all gate drivers, reducing system power draw during light/no-load conditions. This feature enables compliance with stringent no-load standards like DOE Level VI and EU CoC Tier 2 when implemented with a PFC gate signal or microcontroller interface.

What package type and pin count does the TEA2209T/1Y use?

The TEA2209T/1Y is packaged in a plastic small outline package (SO16) per SOT109-1 standard: 16 leads, 3.9 mm body width, 1.27 mm pitch, and 1.75 mm maximum height. This surface-mount package supports automated assembly and provides adequate thermal performance with a junction-to-case thermal resistance of 46 K/W in free air.