Vishay General Semiconductor - Diodes Division TGL41-33-E3/96
- Part No.:
- TGL41-33-E3/96
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-213AB, MELF
- Datasheet:
-
TGL41-33-E3/96.pdf
- Description:
- TVS DIODE 26.8VWM 47.7VC GL41
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TGL41-33-E3/96 from Vishay General Semiconductor is a unidirectional Transient Voltage Suppressor (TVS) diode in DO-213AB (GL41) plastic MELF package, designed for clamping inductive load switching transients and lightning-induced surges on signal lines. It features 31.4 V to 34.7 V breakdown voltage (VBR), 28.2 V stand-off voltage (VWM), 45.7 V maximum clamping voltage at 8.8 A peak pulse current, and 400 W peak pulse power rating with 10/1000 µs waveform.
For engineers reviewing the TGL41-33-E3/96 datasheet, TGL41-33-E3/96 pinout, TGL41-33-E3/96 application, or TGL41-33-E3/96 equivalent, key selection criteria include unidirectional polarity, glass-passivated junction, MSL Level 1 moisture sensitivity, 0.101 %/°C VBR temperature coefficient, and suitability for consumer, industrial, and telecom sensor line protection where fast response (<1 ns) and low incremental surge resistance are required.
Technical Context
This TVS diode operates as a voltage-clamping protection device in series with sensitive downstream circuitry, conducting only when reverse voltage exceeds its breakdown threshold. Its glass-passivated junction ensures stable leakage performance and long-term reliability under repetitive transient stress.
The DO-213AB (GL41) MELF package enables automated placement and provides robust thermal dissipation for 1.0 W steady-state power handling. With 0.01 % duty cycle capability and 150 °C maximum junction temperature, it supports high-reliability operation in ambient temperatures up to 125 °C after derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/max) | 31.4 V / 34.7 V - defines precise clamping onset range under 1.0 mA test current; critical for matching system overvoltage thresholds |
| VWM | 28.2 V - maximum continuous reverse working voltage before leakage exceeds 5 μA; sets safe operating margin below breakdown |
| VC @ IPPM | 45.7 V at 8.8 A - clamped voltage during 10/1000 µs surge; determines worst-case stress on protected IC or MOSFET gate |
| PPPM | 400 W - peak pulse power handling per 10/1000 µs waveform; validates robustness against IEC 61000-4-5 Level 4 surges |
| IFSM | 40 A - 8.3 ms half-sine surge current rating; supports single-event inrush protection without bond wire fusing |
| TJ max. | 150 °C - maximum junction temperature; enables use in sealed enclosures or high-ambient industrial environments |
| Package | DO-213AB (GL41) - standardized MELF outline with matte tin-plated leads; compatible with J-STD-002 soldering and JESD 22-B102 reliability |
Pinout & Package
DO-213AB (GL41) is a cylindrical plastic MELF package with two solderable end terminals. Polarity is marked by a blue band denoting the cathode (positive terminal under normal TVS operation); anode is the unmarked end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (blue band) | Transient current sink | Connected to protected line; conducts surge current to ground path when VREV > VBR |
| Anode | Reference/ground return | Typically tied to system ground or low-impedance return plane; completes clamping current path |
Key Features
| Feature | Design Value |
|---|---|
| 400 W peak pulse power (10/1000 µs) | Validates compliance with IEC 61000-4-5 surge immunity requirements for industrial equipment |
| Glass-passivated chip junction | Ensures <1 μA leakage at VWM across -55 °C to 125 °C, minimizing standby power loss in battery systems |
| MSL Level 1 (250 °C peak reflow) | Supports standard lead-free SMT assembly without pre-baking; eliminates moisture-related popcorning risk |
| Uni-directional polarity only | Optimized for DC-biased signal or power rails where reverse conduction must be blocked during normal operation |
| 0.101 %/°C VBR tempco | Enables predictable clamping voltage shift over temperature; simplifies margin analysis in automotive (-40 °C to 125 °C) designs |
Applications
| Industrial Sensor Interface Protection | Telecom Line Card Surge Suppression |
|---|---|
Use Scenario: Protecting 4–20 mA current loop transmitters and analog input stages from field wiring transients in factory automation. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground, clamping induced surges before they reach precision op-amps or ADC front-ends. Use Value: Maintains signal integrity with <5 μA leakage at 28.2 V, while limiting transient overshoot to ≤45.7 V at 8.8 A-within absolute maximum ratings of 24-bit SAR ADCs. |
Use Scenario: Shielding RS-485 transceivers and Ethernet PHYs on telecom access equipment from lightning-induced common-mode surges on twisted-pair cabling. IC Role / Device Role / Timing Role: Primary clamping element on differential data lines, coordinated with common-mode chokes to divert energy away from silicon. Use Value: Fast response time (<1 ns) and low dynamic impedance ensure sub-50 V clamping during 10/1000 µs surges-meeting GR-1089-CORE Level 3 requirements. |
| Consumer IoT Device ESD Hardening | Automotive Body Control Module Inputs |
Use Scenario: Safeguarding USB, I²C, and GPIO lines on smart home hubs against human-body-model (HBM) ESD and cable discharge events. IC Role / Device Role / Timing Role: Secondary-level protection downstream of connector-level TVS arrays, providing localized clamping at IC pins. Use Value: Low capacitance (<100 pF at 0 V) prevents signal degradation on 400 kHz I²C buses; RoHS-compliant E3 suffix meets global environmental mandates. |
Use Scenario: Protecting LIN bus inputs and switch sense circuits in body control modules exposed to load dump and jump-start transients. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V supply rails and low-side switch returns, absorbing repetitive 100 V/50 ms load dump pulses. Use Value: 150 °C TJ max and -55 °C to 150 °C operating range support under-hood deployment; 40 A IFSM withstands multiple jump-start events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33A | DO-214AA (SMB) package; 33 V VWM, 53.3 V VC @ 7.5 A; 600 W PPPM | Higher clamping voltage and larger footprint; better suited for PCB space-constrained but thermally robust layouts | Select SMBJ33A when board layout allows larger SMD footprint and higher clamping voltage is acceptable for downstream device margins |
| 1.5SMC33A | DO-214AB (SMC) package; 33 V VWM, 53.3 V VC @ 7.5 A; 1500 W PPPM | Higher power rating and larger thermal mass; requires more PCB area and different reflow profile | Choose 1.5SMC33A for high-energy surge environments (e.g., outdoor telecom cabinets) where 400 W is insufficient |
Compared with TGL41-33-E3/96, SMBJ33A offers higher peak power but less precise clamping due to higher VC, while 1.5SMC33A delivers triple the surge capacity at the cost of footprint and assembly compatibility-making TGL41-33-E3/96 optimal for compact, high-volume consumer and industrial sensor nodes requiring tight voltage margins and MELF placement efficiency.
Availability
TGL41-33-E3/96 is available at Aetrix Electronics and suitable for industrial sensor interface protection, telecom line card surge suppression, and consumer IoT device ESD hardening requiring stable component supply, consistent MELF packaging, and RoHS-compliant manufacturing traceability.
Supply support for TGL41-33-E3/96 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, power efficiency, and application-specific optimization.
The TGL41 series belongs to Vishay's TRANSZorb® TVS family, engineered specifically for high-speed, low-leakage transient suppression in space-constrained and thermally demanding applications across consumer, industrial, and telecom markets.
FAQ
What is the breakdown voltage range for TGL41-33-E3/96?
The TGL41-33-E3/96 has a specified breakdown voltage (VBR) range of 31.4 V to 34.7 V at 1.0 mA test current, measured per ANSI/IEEE C62.35 standards. This range ensures consistent clamping behavior across production lots and supports design margining for 28.2 V stand-off operation. The TGL41-33-E3/96 maintains this specification across -55 °C to 125 °C ambient conditions with a temperature coefficient of 0.101 %/°C.
Is TGL41-33-E3/96 unidirectional or bidirectional?
TGL41-33-E3/96 is unidirectional only, as explicitly stated in the Vishay datasheet. Its blue band marks the cathode, which must be connected toward the protected line, while the anode connects to ground or reference. Bidirectional variants are not offered in the TGL41 series; using TGL41-33-E3/96 on AC-coupled or floating lines requires external biasing or alternative part selection.
What is the maximum clamping voltage of TGL41-33-E3/96 at rated peak pulse current?
The TGL41-33-E3/96 exhibits a maximum clamping voltage (VC) of 45.7 V at its rated peak pulse current (IPPM) of 8.8 A, tested with a 10/1000 µs waveform. This value represents the worst-case voltage seen by downstream components during surge events and is guaranteed across the full operating temperature range. The TGL41-33-E3/96 achieves this with low incremental surge resistance, ensuring minimal voltage overshoot beyond VC.
Does TGL41-33-E3/96 meet RoHS and lead-free assembly requirements?
Yes, TGL41-33-E3/96 carries the E3 suffix, confirming RoHS compliance per Directive 2011/65/EU and qualification for lead-free reflow soldering with a peak temperature of 250 °C. It meets MSL Level 1 per J-STD-020, requires no pre-baking, and features matte tin-plated leads compliant with J-STD-002 and JESD 22-B102. The TGL41-33-E3/96 also passes JESD 201 Class 1A whisker testing.
What is the package type and dimensions of TGL41-33-E3/96?
TGL41-33-E3/96 uses the DO-213AB (GL41) plastic MELF package: cylindrical, 3.0–3.5 mm length, 2.41–2.67 mm diameter, with solderable ends and blue cathode band. Its compact size supports high-density placement, and the package outline matches JEDEC MS-012 standards. The TGL41-33-E3/96 weighs 0.134 g and ships in 7" tape-and-reel (1500 units) with carrier code 96.
TGL41-33-E3/96 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-213AB, MELF
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26.8V
- Voltage - Breakdown (Min):
- 29.7V
- Voltage - Clamping (Max) @ Ipp:
- 47.7V
- Current - Peak Pulse (10/1000µs):
- 8.4A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-213AB (GL41)
TGL41-33-E3/96 FAQ
1.How can I place an order for TGL41-33-E3/96 through Aetrix?
Please submit a Request for Quotation (RFQ) for TGL41-33-E3/96 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TGL41-33-E3/96 reliable?
The price and inventory of TGL41-33-E3/96 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TGL41-33-E3/96 is usually 5 days.
3.What payment methods are accepted for TGL41-33-E3/96?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TGL41-33-E3/96 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TGL41-33-E3/96?
TGL41-33-E3/96 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TGL41-33-E3/96 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TGL41-33-E3/96?
For technical support, including TGL41-33-E3/96 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TGL41-33-E3/96 requirements.
6.How does Aetrix verify that TGL41-33-E3/96 is sourced from the original manufacturer or authorized distributors?
All TGL41-33-E3/96 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TGL41-33-E3/96 meets industry standards.
7.What is the process for return or replacement of TGL41-33-E3/96?
All TGL41-33-E3/96 units undergo pre-shipment inspection (PSI). If there is an issue with TGL41-33-E3/96, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TGL41-33-E3/96 part is unused and in its original packaging.
Return procedure for TGL41-33-E3/96:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TGL41-33-E3/96 Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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