Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TMPG06-9.1HE3/73

Part No.:
TMPG06-9.1HE3/73
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
MPG06, Axial
Datasheet:
AetrixTMPG06-9.1HE3/73.pdf
Description:
TVS DIODE 7.37VWM 13.8VC MPG06
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,383

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TMPG06-9.1HE3/73 from Vishay General Semiconductor is a unidirectional automotive-grade transient voltage suppressor diode in MPG06 package, featuring 9.1 V breakdown voltage (VBR min/max: 8.19–10.0 V), 400 W peak pulse power (10/1000 µs), 21.7 V clamping voltage at 50 A IPPM, and AEC-Q101 qualification for engine control units and sensor protection.

For engineers reviewing the TMPG06-9.1HE3/73 datasheet, TMPG06-9.1HE3/73 pinout, TMPG06-9.1HE3/73 application, or TMPG06-9.1HE3/73 equivalent, key selection criteria include clamping performance under 10/1000 µs surge, junction temperature derating to +185 °C, RoHS-compliant matte tin leads, and compatibility with J-STD-002 solderability standards.

Technical Context

This TVS diode uses patented PAR® construction for low incremental surge resistance and fast response time (<1 ns), enabling robust suppression of inductive switching transients in automotive power electronics. Its unidirectional polarity and 1.0 VWM standoff voltage support DC-biased signal and power line protection.

The device operates across –65 °C to +185 °C junction temperature range with 0.068 %/°C VBR temperature coefficient, and maintains stable clamping up to 50 A peak pulse current per 10/1000 µs waveform-critical for protecting MOSFETs and microcontrollers in harsh environments.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/max) 8.19 V / 10.0 V - Ensures reliable conduction onset above normal operating voltage while avoiding false triggering.
VC @ IPPM 21.7 V at 50 A - Limits downstream voltage stress during 10/1000 µs surges to safe levels for 3.3 V/5 V ICs.
PPPM 400 W - Sustains high-energy transients common in automotive load-dump and ISO 7637-2 pulse 5a events.
IFSM 40 A - Withstands 8.3 ms half-sine surge without degradation, supporting motor driver and alternator interface designs.
TJ max. +185 °C - Enables placement near heat sources (e.g., power modules) without thermal derating penalties.
VWM 1.0 V - Matches low-voltage logic and sensor supply rails where minimal leakage and tight standoff are essential.
Leakage @ VWM 10 µA at 25 °C - Minimizes standby power loss in battery-critical systems like body control modules.

Pinout & Package

Package: MPG06 molded epoxy case, UL 94 V-0 rated, with matte tin-plated leads compliant with J-STD-002 and JESD22-B102. Cathode denoted by color band.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry point during forward conduction Connected to protected circuit ground or low-side return path; enables unidirectional clamping to ground.
Cathode Current exit point during reverse-biased clamping Connected to protected line (e.g., CAN_H, LIN, sensor VCC); sinks surge current to ground when VLINE exceeds VBR.

Key Features

Feature Design Value
Patented PAR® construction Reduces incremental surge resistance for tighter VC tolerance and lower let-through energy during fast transients.
AEC-Q101 qualified Validated for automotive under-hood applications including powertrain and ADAS sensor interfaces with zero infant mortality.
RoHS-compliant HE3 suffix Meets JESD201 Class 2 whisker resistance, ensuring long-term reliability in vibration-prone automotive harnesses.
185 °C max junction temperature Supports direct mounting on high-temperature PCB zones (e.g., near ignition coils or DC-DC converters) without heatsinking.
400 W peak pulse rating Handles repeated ISO 7637-2 Pulse 1 (inductive switch-off) and Pulse 5a (load dump) without parameter shift.

Applications

Engine Control Unit Protection Automotive Sensor Interface

Use Scenario: Protecting MCU I/O pins and analog front-ends from load-dump transients induced by fuel injector or solenoid coil de-energization.

IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between protected signal line and chassis ground.

Use Value: Clamps 10/1000 µs surges to ≤21.7 V, preventing latch-up or gate oxide damage in 5 V tolerant microcontrollers.

Use Scenario: Safeguarding LIN bus transceivers and analog sensor outputs (e.g., oxygen, pressure) against ESD and switching noise.

IC Role / Device Role / Timing Role: Standoff voltage of 1.0 V ensures no interference with 12 V nominal LIN signaling while suppressing >100 V spikes.

Use Value: 10 µA leakage at VWM avoids signal offset errors in precision ratiometric sensor bridges.

Body Control Module Power Rail Electric Power Steering Motor Driver

Use Scenario: Decoupling 12 V supply lines feeding door lock actuators, window lift motors, and lighting drivers.

IC Role / Device Role / Timing Role: Parallel-connected TVS absorbing repetitive inductive kickback from brushed DC motor commutation.

Use Value: 40 A IFSM rating supports 8.3 ms surge survival during simultaneous actuator activation events.

Use Scenario: Protecting half-bridge MOSFET gates and bootstrap circuits from Miller-induced voltage overshoot during high-speed PWM switching.

IC Role / Device Role / Timing Role: Low-capacitance unidirectional clamp referenced to local ground, minimizing signal distortion on gate drive paths.

Use Value: Fast <1 ns response time prevents gate oxide breakdown before controller overvoltage protection triggers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ9.0A Lower PPPM (400 W same), but VC = 14.4 V @ 28.6 A; smaller SMA package (lower thermal mass). Limited to ambient-temperature industrial use; not AEC-Q101 qualified or rated for TJ = 185 °C. Select when cost and board space outweigh automotive qualification and high-temperature operation.
TPSMA6.8A VBR = 6.8 V (min/max 6.45–7.14 V); VC = 11.5 V @ 34.7 A; same MPG06 package and AEC-Q101 grade. Better suited for 5 V rail protection where lower clamping voltage is critical, but insufficient for 12 V system transients. Choose for 5 V logic or USB-C PD port protection where tighter VC and lower VBR improve margin.

Compared with SMAJ9.0A and TPSMA6.8A, TMPG06-9.1HE3/73 uniquely combines AEC-Q101 qualification, +185 °C operation, and 9.1 V VBR optimized for 12 V automotive systems-making it the only option validated for under-hood ECU and sensor node deployment.

Availability

TMPG06-9.1HE3/73 is available at Aetrix Electronics and suitable for automotive powertrain control, body electronics, and ADAS sensor protection requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for TMPG06-9.1HE3/73 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs discrete semiconductors for high-reliability power, protection, and sensing applications, with global manufacturing and AEC-Q101 validation infrastructure.

The TMPG06 series was engineered specifically for automotive transient suppression-emphasizing high-temperature stability, low clamping variance, and robustness against repetitive surge stress in engine compartments and chassis modules.

FAQ

What is the clamping voltage of TMPG06-9.1HE3/73 at its rated peak pulse current?

The clamping voltage (VC) of TMPG06-9.1HE3/73 is 21.7 V at 50 A peak pulse current (IPPM) under the standard 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and ensures predictable overvoltage limiting for downstream 5 V and 12 V components. The TMPG06-9.1HE3/73 maintains this clamping performance across its full operating temperature range.

Is TMPG06-9.1HE3/73 qualified for automotive applications?

Yes, TMPG06-9.1HE3/73 is AEC-Q101 qualified and designated as high-reliability/automotive grade (base P/N HE3). It meets stringent requirements for temperature cycling, humidity, mechanical shock, and surge endurance-validated for under-hood use in ECUs, body control modules, and sensor nodes. The TMPG06-9.1HE3/73 datasheet explicitly references AEC-Q101 compliance in its mechanical data section.

What does the HE3 suffix indicate on TMPG06-9.1HE3/73?

The HE3 suffix on TMPG06-9.1HE3/73 denotes RoHS compliance, high-reliability construction, and qualification to JESD201 Class 2 for tin whisker resistance. It confirms matte tin-plated leads that meet J-STD-002 solderability standards and 260 °C solder dip (40 s) capability-critical for automotive reflow and wave soldering processes. The TMPG06-9.1HE3/73 HE3 marking is defined in the official Vishay document 88404.

What is the maximum operating junction temperature for TMPG06-9.1HE3/73?

The maximum operating junction temperature (TJmax) for TMPG06-9.1HE3/73 is +185 °C, as specified in the "Primary Characteristics" table and confirmed in the "Maximum Ratings" section of the Vishay datasheet. This allows direct placement near heat-generating components such as power MOSFETs or DC-DC converters without thermal derating. The TMPG06-9.1HE3/73 sustains full electrical performance up to this limit.

How does TMPG06-9.1HE3/73 differ from the TMPG06-9.1A variant?

TMPG06-9.1HE3/73 has a breakdown voltage range of 8.19–10.0 V and 10 µA leakage at VWM, whereas TMPG06-9.1A specifies 8.65–9.55 V VBR and 10 µA leakage at VWM. The "A" suffix indicates tighter VBR tolerance, but both share identical package, power rating, clamping voltage, and AEC-Q101 qualification. The TMPG06-9.1HE3/73 is the standard-grade version optimized for cost-sensitive automotive volume production.

TMPG06-9.1HE3/73 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
MPG06, Axial
Series:
eSMP®
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
7.37V
Voltage - Breakdown (Min):
8.19V
Voltage - Clamping (Max) @ Ipp:
13.8V
Current - Peak Pulse (10/1000µs):
21.7A
Power - Peak Pulse:
400W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
MPG06

TMPG06-9.1HE3/73 FAQ

1.How can I place an order for TMPG06-9.1HE3/73 through Aetrix?

Please submit a Request for Quotation (RFQ) for TMPG06-9.1HE3/73 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TMPG06-9.1HE3/73 reliable?

The price and inventory of TMPG06-9.1HE3/73 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TMPG06-9.1HE3/73 is usually 5 days.

3.What payment methods are accepted for TMPG06-9.1HE3/73?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TMPG06-9.1HE3/73 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TMPG06-9.1HE3/73?

TMPG06-9.1HE3/73 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TMPG06-9.1HE3/73 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TMPG06-9.1HE3/73?

For technical support, including TMPG06-9.1HE3/73 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TMPG06-9.1HE3/73 requirements.

6.How does Aetrix verify that TMPG06-9.1HE3/73 is sourced from the original manufacturer or authorized distributors?

All TMPG06-9.1HE3/73 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TMPG06-9.1HE3/73 meets industry standards.

7.What is the process for return or replacement of TMPG06-9.1HE3/73?

All TMPG06-9.1HE3/73 units undergo pre-shipment inspection (PSI). If there is an issue with TMPG06-9.1HE3/73, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TMPG06-9.1HE3/73 part is unused and in its original packaging.

Return procedure for TMPG06-9.1HE3/73:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TMPG06-9.1HE3/73 Tags

  • TMPG06-9.1HE3/73
  • TMPG06-9.1HE3/73 PDF
  • TMPG06-9.1HE3/73 Datasheet
  • TMPG06-9.1HE3/73 Specifications
  • TMPG06-9.1HE3/73 Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TMPG06-9.1HE3/73
  • Buy TMPG06-9.1HE3/73
  • TMPG06-9.1HE3/73 Price
  • TMPG06-9.1HE3/73 Distributor
  • TMPG06-9.1HE3/73 Supplier
  • TMPG06-9.1HE3/73 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER