Texas Instruments TPS2812DR

Overview

TPS2812DR from Texas Instruments is a dual-channel noninverting high-speed MOSFET driver IC with integrated voltage regulator, delivering 2-A peak source/sink current per channel, 25-ns max rise/fall times (1-nF load, V_CC = 14 V), and operation across −40°C to 125°C ambient. It enables robust gate driving in synchronous buck converters and industrial motor control stages where fast switching and supply rail extension to 40 V are required.

For engineers reviewing the TPS2812DR datasheet, TPS2812DR pinout, TPS2812DR application, or TPS2812DR equivalent, this page delivers verified electrical specs, regulator behavior under 14–40 V input, dual noninverting logic mapping, thermal derating data for SOIC-D package, and real-world MOSFET drive capability up to Hex-4 size devices.

Technical Context

The TPS2812DR implements two independent noninverting CMOS-input drivers with bipolar-MOSFET hybrid output stages, enabling rail-to-rail swing (V_CC to GND) and guaranteed turn-off of low-threshold MOSFETs. Its internal regulator accepts 14–40 V on REG_IN and delivers 10–13 V at up to 20 mA on REG_OUT to stabilize V_CC when external supply exceeds 14 V.

Input thresholds follow Schmitt-trigger behavior (≈⅓ V_CC low-to-high, ≈⅔ V_CC high-to-low), providing noise immunity and shoot-through current <6 mA during mid-rail transitions. Propagation delay remains ≤40 ns across 5–14 V V_CC, and switching performance is load-capacitance dependent but isolated from input slew rate.

Key Specifications

Pinout & Package

TPS2812DR is supplied in an 8-pin SOIC (D) package with standard 1.27-mm pitch, tape-and-reel format (R suffix). Thermal dissipation rating is 730 mW at T_A ≤ 25°C, derating linearly at 5.84 mW/°C above 25°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual noninverting MOSFET driver applications.

Compared with TPS2812D, the TPS2812DR adds tape-and-reel packaging for automated manufacturing, while LM5113SD trades dual-channel convenience and regulator integration for higher single-channel drive strength-making TPS2812DR optimal for compact, regulated dual-FET gate drive in industrial and automotive power modules.

Availability

TPS2812DR is available at Aetrix Electronics and suitable for synchronous buck converters, industrial motor gate drivers, automotive DC-DC modules, and programmable power supplies requiring stable component supply with full traceability and extended temperature qualification.

Supply support for TPS2812DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 50 years of innovation in high-reliability power control ICs.

The TPS28xx series was designed specifically for high-frequency, high-efficiency MOSFET gate driving in industrial, automotive, and telecom power systems-emphasizing speed, integration, and ruggedness across extended temperature and voltage ranges.

FAQ

What is the function of the REG_IN and REG_OUT pins on the TPS2812DR?

The REG_IN pin accepts 14–40 V unregulated input to power an internal LDO, which delivers a regulated 10–13 V output on REG_OUT. This allows the TPS2812DR to operate directly from industrial or automotive rails without external regulation. When unused, both REG_IN and REG_OUT may be left floating or tied to V_CC/GND.

Can the two output channels of the TPS2812DR be paralleled to drive a single large MOSFET?

Yes-the TPS2812DR supports channel paralleling to double peak current capability and reduce effective gate resistance. Application note SLVS132F confirms matched propagation delay (<5 ns skew) and improved rise/fall times when outputs are tied together, enabling reliable drive of Hex-4 MOSFETs like IRF840 with sub-20 ns turn-on.

What decoupling capacitance is required for stable operation of the TPS2812DR?

A 0.1-µF ceramic capacitor between V_CC and GND is mandatory to supply instantaneous current during switching. For regulator stability, a 0.1-µF ceramic capacitor must also be placed between REG_OUT and GND; adding a 4.7-µF electrolytic capacitor on REG_OUT further improves transient response under dynamic load.

Does the TPS2812DR support 3.3-V logic inputs?

No-the TPS2812DR has CMOS-compatible Schmitt-trigger inputs with thresholds at ≈⅓ V_CC (low-to-high) and ≈⅔ V_CC (high-to-low). At V_CC = 5 V, minimum high input is ~3.3 V; at V_CC = 10 V, it rises to ~6.7 V. Direct 3.3-V logic interfacing requires a level shifter or resistor divider.

How does the TPS2812DR prevent shoot-through current during input transitions?

The TPS2812DR uses a patented input stage design that inherently limits shoot-through current to ≤6 mA during mid-rail input transitions-verified in Figures 17–18 of SLVS132F. This is achieved via controlled current steering in the front-end logic, not just threshold hysteresis, ensuring minimal self-heating and robust operation in noisy environments.