Texas Instruments TPS2813DR

Overview

TPS2813DR from Texas Instruments is a dual complementary-output MOSFET driver IC with integrated 11.5-V regulator, delivering ±2-A peak output current, 25-ns max rise/fall times, and 40-ns max propagation delay into 1-nF load at V_CC = 14 V. It operates across −40°C to 125°C and supports 4–14-V V_CC with regulator extension up to 40-V REG_IN - used in synchronous buck converters and high-frequency half-bridge gate drive.

For engineers reviewing the TPS2813DR datasheet, TPS2813DR pinout, TPS2813DR application, or TPS2813DR equivalent, key selection factors include its complementary logic configuration (one inverting + one noninverting channel), regulator-enabled high-voltage input tolerance, low 5-µA quiescent supply current, and fast switching performance under capacitive gate loads.

Technical Context

The TPS2813DR integrates two independent CMOS-input drivers: Channel 1 is inverting, Channel 2 is noninverting - enabling direct complementary control of high-side/low-side N-channel MOSFETs without external logic inversion. Its internal regulator accepts 14–40 V on REG_IN and delivers a stable 11.5-V output (±1.5 V) at up to 20 mA to power V_CC, decoupled by 0.1-µF ceramic + 4.7-µF electrolytic capacitors.

Each output stage combines bipolar and MOSFET transistors in parallel to achieve rail-to-rail swing (V_CC to GND) with 2-A source/sink capability, ensuring robust turn-on/turn-off of low-threshold MOSFETs. Input thresholds are Schmitt-triggered (≈1/3 V_CC low-to-high, ≈2/3 V_CC high-to-low), providing noise immunity and shoot-through current <6 mA during input transitions.

Key Specifications

Pinout & Package

TPS2813DR is packaged in an 8-pin SOIC (D) package with tape-and-reel delivery (R suffix). The device uses a standard SOIC-8 footprint (5.3 mm × 6.2 mm, 1.27 mm pitch) and features exposed pad thermal enhancement per TI's D package specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual complementary MOSFET driver applications.

Compared with TPS2813D and UCC27324DR, the TPS2813DR uniquely combines complementary logic, integrated HV regulator, and SOIC-8 tape-and-reel packaging - making it optimal for cost-sensitive, high-volume industrial power stages where board space and BOM count are constrained.

Availability

TPS2813DR is available at Aetrix Electronics and suitable for synchronous buck converters, motor drive half-bridges, and industrial PLC output stages requiring stable component supply with guaranteed long-term manufacturability.

Supply support for TPS2813DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with over 90 years of innovation in high-reliability power solutions.

The TPS28xx series was designed specifically for high-efficiency, high-frequency MOSFET gate driving in industrial, automotive, and telecom power systems - emphasizing low shoot-through, rail-to-rail output, and HV input tolerance.

FAQ

What is the function of the REG_IN and REG_OUT pins on the TPS2813DR?

The REG_IN pin accepts 14–40 V input to power the internal regulator, which delivers a stable 11.5-V output at REG_OUT (10–13 V range, up to 20 mA). When active, REG_OUT supplies V_CC - allowing TPS2813DR to operate directly from high-voltage rails without external regulation. If unused, both REG_IN and REG_OUT may be left floating or tied to V_CC/GND.

Can the TPS2813DR drive both high-side and low-side N-channel MOSFETs in a half-bridge?

Yes - the TPS2813DR's complementary logic (inverting 1OUT + noninverting 2OUT) enables direct half-bridge control. When paired with bootstrap or isolated gate drive for the high-side, it eliminates external inverters. Its rail-to-rail output stage ensures full V_CC/GND swing, critical for enhancing low-V_TH MOSFETs reliably in TPS2813DR-based designs.

What is the maximum load capacitance the TPS2813DR can drive while maintaining 25-ns rise time?

The 25-ns max rise time is specified at C_L = 1 nF and V_CC = 14 V. At higher capacitance (e.g., 10 nF), rise time degrades to ~60 ns (per TI Figure 25). For gate loads >2 nF, paralleling both TPS2813DR outputs reduces effective drive impedance and restores edge speed - validated in TI Application Report SLVS132F Figures 28–31.

Does the TPS2813DR require external decoupling capacitors, and if so, what values?

Yes - a 0.1-µF ceramic capacitor between V_CC and GND is mandatory to supply instantaneous current during fast switching. For regulator stability, a 0.1-µF ceramic + 4.7-µF electrolytic capacitor must be placed between REG_OUT and GND. These values are specified in TI's SLVS132F datasheet Section "Application Information" and are essential to prevent oscillation and ensure consistent 2-A peak output.

How does the TPS2813DR prevent shoot-through current during input transitions?

The TPS2813DR uses Schmitt-trigger inputs with ≥1.2 V hysteresis and a proprietary front-end design that inherently limits shoot-through current to <6 mA during mid-rail input transitions (per TI Figures 17–18). This is achieved without external timing components - unlike discrete gate drivers - making TPS2813DR robust in noisy PWM environments where input slew rates vary.