Texas Instruments TPS2815P

Overview

TPS2815P from Texas Instruments is a dual 2-input NAND high-speed MOSFET driver IC designed for gate driving of n-channel and p-channel power MOSFETs in switching power supplies and motor control circuits. It delivers 2-A peak source/sink current, achieves ≤25-ns rise/fall times (V_CC = 14 V, C_L = 1 nF), operates from 4-V to 14-V supply, and supports −40°C to 125°C ambient operation.

For engineers reviewing the TPS2815P datasheet, TPS2815P pinout, TPS2815P application, or TPS2815P equivalent, key selection considerations include its dual NAND logic architecture, absence of internal regulator (unlike TPS2811/12/13), low 5-µA quiescent supply current, fast propagation delay (<40 ns), and compatibility with high-capacitance gate loads in high-frequency DC-DC converters and synchronous rectifiers.

Technical Context

The TPS2815P implements two independent NAND-gated drivers, each accepting two noninverting inputs (1IN1/1IN2 and 2IN1/2IN2) and producing complementary logic-level outputs (1OUT, 2OUT). Its CMOS input stage features Schmitt-trigger thresholds (~⅓V_CC low-to-high, ~⅔V_CC high-to-low) for noise immunity and shoot-through current <6 mA.

The output stage uses a bipolar-MOSFET parallel structure enabling rail-to-rail swing (0.18 V low-level, 9.9 V high-level at 1 mA) and robust 2-A instantaneous drive into capacitive loads-critical for fast turn-on/turn-off of low-threshold MOSFETs in buck, flyback, and half-bridge topologies.

Key Specifications

Pinout & Package

TPS2815P is housed in an 8-pin plastic DIP (P) package with 0.3-inch body width and through-hole mounting. Pin spacing is 0.1 inch, lead finish is matte tin, and thermal resistance θ_JA is 8.74 mW/°C above 25°C ambient.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual MOSFET driver applications.

Compared with TPS2814P and UCC27524AP, the TPS2815P uniquely combines dual NAND logic, 2-A drive, and 5-µA quiescent current in a legacy-compatible DIP package-making it optimal for cost-sensitive, space-constrained, or logic-integrated gate drive where minimal external components are required.

Availability

TPS2815P is available at Aetrix Electronics and suitable for switch-mode power supplies, synchronous rectifiers, motor control interfaces, and industrial PLC output stages requiring stable component supply, long-term obsolescence management, and traceable sourcing.

Supply support for TPS2815P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with over 50 years of innovation in high-reliability IC design.

The TPS28xx series was engineered specifically for high-frequency, high-efficiency power conversion systems-delivering fast, robust, and logic-flexible MOSFET gate drive with minimal external components and extended temperature resilience.

FAQ

What logic function does the TPS2815P implement, and how does it differ from TPS2814P?

The TPS2815P implements dual 2-input NAND gates-one per output channel-whereas TPS2814P implements dual 2-input AND gates with one inverting input per channel. This means TPS2815P outputs go low only when both inputs are high, enabling direct implementation of active-low enable schemes without external inverters. The TPS2815P pinout and logic truth table are distinct from TPS2814P; they are not interchangeable without circuit redesign.

Does the TPS2815P include an internal voltage regulator like the TPS2811/12/13?

No, the TPS2815P does not include an internal regulator. Unlike TPS2811/12/13-which feature REG_IN and REG_OUT pins for 14–40-V input regulation-the TPS2815P is designed for direct 4–14-V VCC operation only. Its pinout omits REG_IN and REG_OUT, and its internal architecture excludes regulator circuitry. Using it with >14-V supplies requires external regulation to avoid absolute maximum rating violation.

What is the maximum gate capacitance the TPS2815P can drive while maintaining ≤25-ns rise time?

At VCC = 14 V and with 1-nF load, the TPS2815P achieves ≤25-ns rise time per datasheet (SLVS132F). For larger gate capacitances, rise time scales approximately linearly: e.g., 2-nF load yields ~50 ns. To maintain ≤25-ns performance with >1-nF loads, paralleling both TPS2815P outputs per gate (with matched trace lengths) is validated in TI application notes and reduces effective rise time by up to 30%.

Can the TPS2815P drive both high-side and low-side N-channel MOSFETs in a half-bridge without additional level-shifting circuitry?

The TPS2815P can directly drive low-side N-channel MOSFETs with ground-referenced gates. For high-side N-channel MOSFETs, external level-shifting (e.g., bootstrap capacitor + diode or dedicated high-side driver) is required because the TPS2815P lacks floating high-side output capability or integrated level shifters. Its outputs are referenced solely to GND and cannot swing above VCC.

What decoupling capacitance is recommended for stable operation of the TPS2815P?

Texas Instruments specifies a minimum 0.1-µF ceramic capacitor between VCC and GND, placed as close as possible to the TPS2815P pins. For systems with high di/dt transients (e.g., >1-A gate current slew), adding a 4.7-µF electrolytic or tantalum capacitor in parallel improves low-frequency stability and transient response. No capacitor is required on unused pins, and REG_IN/REG_OUT are absent on TPS2815P.