Texas Instruments TPS2818DBVT

Overview

TPS2818DBVT from Texas Instruments is an inverting single-channel high-speed MOSFET driver IC designed for gate driving of power MOSFETs in switching converters. It delivers 2-A peak output current, supports 4-V to 14-V driver supply (VCC), incorporates an internal regulator enabling operation up to 40-V VDD input, and achieves 25-ns max rise/fall times with 1-nF load. It operates across –40°C to 125°C and uses a 5-pin SOT-23 (DBV) package.

For engineers reviewing the TPS2818DBVT datasheet, TPS2818DBVT pinout, TPS2818DBVT application, or TPS2818DBVT equivalent, key selection criteria include its inverting logic function, absence of active pullup (distinguishing it from TPS2816/TPS2817), regulator-enabled wide-input-voltage capability, BiCMOS output stage for low shoot-through, and suitability for high-frequency DC-DC converters requiring fast, robust gate drive.

Technical Context

The TPS2818DBVT implements an inverting driver architecture with a dedicated VDD-regulator input that supplies a regulated ~11.5-V output on VCC, allowing stable gate drive even when main supply exceeds 14 V. Its BiCMOS output stage enables 2-A peak sourcing/sinking while minimizing shoot-through via inherent timing control.

Unlike TPS2816/TPS2817, the TPS2818DBVT omits the active pullup circuit on the IN pin-requiring external biasing for open-collector controllers-but retains full regulator functionality and identical switching performance (25-ns max tr/tf, 40-ns max tPHL/tPLH at 1-nF load).

Key Specifications

Pinout & Package

TPS2818DBVT is housed in a 5-pin SOT-23 (DBV) package - surface-mount, tape-and-reel only, 2.9 mm × 1.6 mm footprint, 1.0 mm height - optimized for high-density power converter layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar MOSFET driver applications.

Compared with TPS2816DBVT, TPS2818DBVT removes the active pullup to reduce input leakage and simplify biasing-ideal for CMOS sources-while retaining full regulator capability. Against TPS2828DBVT, it adds regulator support for wide-input industrial buses but increases quiescent current by ~25 µA.

Availability

TPS2818DBVT is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body electronics, and motor drive half-bridge circuits requiring stable component supply, extended temperature operation, and integrated regulator-based gate drive.

Supply support for TPS2818DBVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog, embedded processing, and silicon technologies for industrial, automotive, and communications markets.

The TPS28xx family was engineered specifically for high-efficiency, high-frequency power conversion-delivering fast, robust gate drive with integrated regulation to simplify system-level power design.

FAQ

What is the logic configuration of the TPS2818DBVT?

The TPS2818DBVT is an inverting MOSFET driver: when the IN pin is high, the OUT pin is low, and vice versa. This matches control requirements for synchronous rectifiers, high-side N-MOSFET drivers with bootstrap circuits, and certain PWM controller topologies. Its threshold voltages are approximately 2/3 VCC (positive-going) and 1/3 VCC (negative-going), with 1.3-V hysteresis for noise immunity. The TPS2818DBVT does not include an internal active pullup on the IN pin, distinguishing it from the TPS2816DBVT.

Does the TPS2818DBVT require an external regulator when used with a 24-V input?

No-the TPS2818DBVT integrates a series regulator that accepts VDD inputs from 8 V to 40 V and delivers a regulated ~11.5-V output on the VCC pin. When supplied with 24-V VDD, the internal regulator maintains stable VCC for the driver core and can source up to 20 mA, eliminating the need for an external LDO. The VCC pin must not be externally powered if VDD is active; connecting VDD to VCC is acceptable only if the regulator is unused.

What is the maximum capacitive load the TPS2818DBVT can drive while maintaining specified timing?

The TPS2818DBVT's 25-ns max rise/fall time and 40-ns max propagation delay are characterized with a 1-nF capacitive load at VCC = 10 V. While it can drive larger loads (e.g., 2.2 nF), timing degrades predictably-rise time increases to ~35 ns at 2.2 nF (VCC = 5 V). For loads exceeding 1 nF, layout optimization (short traces, local 0.1-µF ceramic bypass at VCC–GND) and optional gate-series resistance (~10 Ω near MOSFET) are recommended to suppress ringing and maintain stability.

How does the TPS2818DBVT differ from the TPS2816DBVT?

The TPS2818DBVT and TPS2816DBVT share identical pinout, regulator specs, switching performance (25-ns tr/tf, 40-ns tPHL/tPLH), and operating temperature range. The sole functional difference is the omission of the active pullup circuit on the IN pin in the TPS2818DBVT. This reduces input leakage and eliminates the need for external pullup resistors only when the driver interfaces with CMOS logic; TPS2816DBVT remains necessary for open-collector controllers like TL5001.

Can the TPS2818DBVT safely drive a MOSFET gate with 3000-pF input capacitance?

Yes-the TPS2818DBVT is rated for 2-A peak output current, sufficient to charge/discharge MOSFETs with up to ~3000-pF total gate charge (Qg) within nanoseconds. At 10-V VCC, it delivers ~9.1-V high-level output at 100-mA sink, ensuring strong turn-on even under heavy capacitive loading. However, for such high-Ciss devices, PCB layout is critical: place the TPS2818DBVT within 2 inches of the MOSFET gate, use a 10-Ω series resistor adjacent to the gate, and provide local 0.1-µF ceramic decoupling between VCC and GND to sustain transient current delivery.