Texas Instruments TPS28225DRBR

Overview

TPS28225DRBR from Texas Instruments is a high-frequency dual N-channel MOSFET gate driver with adaptive dead-time control, 4 A sink/2 A source lower/upper gate drive capability, 14 ns propagation delay, and 10 ns rise/fall time-designed for synchronous buck converters operating up to 2 MHz in multi-phase VRMs for servers and notebooks.

For engineers reviewing the TPS28225DRBR datasheet, TPS28225DRBR pinout, TPS28225DRBR application, or TPS28225DRBR equivalent, key selection criteria include bootstrap diode integration, 0.4 Ω LGATE sink resistance for dV/dt shoot-through immunity, 3-state PWM input support, EN/PG dual-function pin, and thermal performance in the 3 mm × 3 mm VSON-8 package.

Technical Context

The TPS28225DRBR implements adaptive dead-time control that dynamically adjusts timing between UGATE turn-off and LGATE turn-on (and vice versa) to prevent shoot-through across varying MOSFET gate charge and layout parasitics. Its internal bootstrap diode (VF = 1.0 V @ 100 mA) enables self-contained high-side drive without external components in half-bridge configurations.

It features a 3-state PWM input circuit with 250 ns hold-off time and self-adjusting thresholds (1.0 V fixed low, ~75% of input amplitude high), allowing compatibility with controllers delivering 2.0–13.2 V PWM signals. The EN/PG pin provides bidirectional communication: pulled low by internal FET during UVLO (<3.0 V) or thermal shutdown (>150 °C), signaling system readiness.

Key Specifications

Pinout & Package

TPS28225DRBR uses the thermally enhanced 3 mm × 3 mm VSON-8 package (DRB) with exposed thermal pad soldered to GND for improved heat dissipation and EMI suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel gate driver applications.

Compared with LM5113SDX/NOPB and UCC27282DRCR, the TPS28225DRBR uniquely combines integrated bootstrap diode, adaptive dead-time control, and 3-state PWM support in a 3 mm × 3 mm thermally optimized package-making it optimal for space-constrained, multi-phase digital VRMs requiring robust shoot-through immunity and controller interoperability.

Availability

TPS28225DRBR is available at Aetrix Electronics and suitable for server VRMs, notebook CPU regulators, and synchronous rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production programs.

Supply support for TPS28225DRBR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies with broad industrial and computing market reach.

The TPS28225DRBR belongs to TI's high-frequency power driver product line, engineered specifically for digitally controlled, multi-phase DC/DC converters demanding precision timing, shoot-through immunity, and compact thermal packaging in datacenter and portable computing applications.

FAQ

What is the maximum switching frequency supported by the TPS28225DRBR?

TPS28225DRBR supports switching frequencies up to 2 MHz, enabled by its 14 ns propagation delay, 10 ns rise/fall times, and ability to propagate <30 ns input PWM pulses. This capability is validated across –40°C to 125°C junction temperature with 3 nF capacitive load on UGATE/LGATE pins per the datasheet's Figure 5-10 and Figure 5-11.

Does the TPS28225DRBR require an external bootstrap diode?

No, the TPS28225DRBR integrates a bootstrap diode with 1.0 V forward voltage at 100 mA, eliminating the need for an external diode. This simplifies layout, reduces BOM count, and improves reliability in high-frequency synchronous buck designs-confirmed in Section 6.3.5 and Absolute Maximum Ratings Table 5.1.

How does the 3-state PWM input function on the TPS28225DRBR?

The TPS28225DRBR's 3-state PWM input detects high-impedance states lasting ≥250 ns and forces both UGATE and LGATE low. Its self-adjusting thresholds (1.0 V fixed low, amplitude-dependent high) accept 2.0–13.2 V PWM signals-detailed in Section 6.3.4 and Figure 5-19 of the TPS28225DRBR datasheet.

What is the purpose of the EN/PG pin on the TPS28225DRBR?

The EN/PG pin on the TPS28225DRBR serves dual functions: applying >2.1 V enables the driver, while the device pulls it low during UVLO (<3.0 V) or thermal shutdown (>150 °C) to signal fault condition to the controller-enabling coordinated system-level power sequencing per Section 6.3.3.

Can the TPS28225DRBR drive high-side and low-side MOSFETs in a half-bridge configuration?

Yes, the TPS28225DRBR is explicitly designed for half-bridge synchronous buck topologies: UGATE drives the high-side N-MOSFET gate referenced to PHASE, LGATE drives the low-side N-MOSFET gate referenced to GND, and the internal bootstrap diode sustains UGATE drive-verified in the Functional Block Diagram (Figure 6-2) and Pin Functions Table 4-1.