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Texas Instruments TPS28225DRBT

Part No.:
TPS28225DRBT
Manufacturer:
Texas Instruments
Category:
Gate Drivers
Package:
8-VDFN Exposed Pad
Datasheet:
AetrixTPS28225DRBT.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8SON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,468

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Product details

Overview

TPS28225DRBT from Texas Instruments is a high-frequency dual N-channel MOSFET gate driver with adaptive dead-time control, 4 A sink/2 A source lower gate drive, 14 ns propagation delay, and 10 ns rise/fall times-designed for synchronous buck converters operating up to 2 MHz in multi-phase VRMs and server power supplies.

For engineers reviewing the TPS28225DRBT datasheet, TPS28225DRBT pinout, TPS28225DRBT application, or TPS28225DRBT equivalent, key selection considerations include its 3-state PWM input compatibility, integrated bootstrap diode, 0.4 Ω LGATE sink resistance for dV/dt shoot-through prevention, EN/PG dual-function pin, and thermal shutdown with 150°C trip point.

Technical Context

The TPS28225DRBT implements adaptive dead-time control via internal sensing of UGATE and LGATE transitions, ensuring non-overlapping drive signals across full duty cycle range. Its 3-state PWM input circuit uses self-adjusting thresholds (1.0 V fixed low, amplitude-dependent high) with 250 ns hold-off time to force both outputs low during high-impedance controller states.

It integrates a 1.0 V forward-drop bootstrap diode (100 mA), UVLO with 3.5 V rising/3.0 V falling threshold and 0.5 V hysteresis, and a bidirectional EN/PG pin with 1 kΩ series resistance and internal 1 MΩ pull-down-enabling power-good signaling and system-level fault coordination without external components.

Key Specifications

ParameterValue and Actual Design Meaning
VDD Range4.5 V to 8 V - sets optimal gate drive voltage for efficiency; 7–8 V delivers best FET switching performance
LGATE Sink Current4 A - enables fast turn-off of high-capacitance low-side N-MOSFETs in high-current phases
Propagation Delay14 ns - supports stable 2 MHz switching with tight timing margins in multi-phase DC/DC converters
Dead Time14 ns - adaptive, non-overlapping timing prevents shoot-through even at extreme duty cycles
LGATE Sink RDS(on)0.4 Ω - actively clamps low-side gate below threshold during high dV/dt phase-node transitions
PWM Input Range2.0 V to 13.2 V - interoperable with analog controllers, digital PMBus ICs, and logic-level sources
Thermal Shutdown150°C rising / 140°C falling - protects against sustained overload while allowing brief peak operation

Pinout & Package

TPS28225DRBT is housed in a thermally enhanced 3 mm × 3 mm VSON-8 package with exposed thermal pad (pin 9), requiring direct solder connection to PCB ground plane for optimal thermal performance and EMI suppression.

Pin/TerminalCircuit RoleDesign Meaning
UGATE (1)Upper gate driver outputDrives high-side N-MOSFET gate; sourced/sunk by internal P/N-FET pair with 2 A capability each
BOOT (2)Floating bootstrap supplyConnects to bootstrap capacitor (BOOT–PHASE); powers UGATE driver during high-side conduction
PWM (3)3-state PWM control inputAccepts 2–13.2 V pulses; enters shutdown if held in 1.0–2.0 V window ≥250 ns
GND (4)Power and signal referenceCommon return for all currents; thermal pad must be connected to GND for RθJA = 50.2°C/W
LGATE (5)Lower gate driver outputSinks 4 A / sources 2 A; 0.4 Ω sink RDS(on) prevents shoot-through at fast phase-node transitions
VDD (6)Bias supply input4.5–8 V input powering internal logic and gate drivers; UVLO active below 3.0 V
EN/PG (7)Enable / Power-Good I/O1 MΩ internal pull-down disables driver if open; pulled low by internal FET during UVLO or thermal fault
PHASE (8)Half-bridge switch nodeReturn path for UGATE driver; connects to source of high-side MOSFET and drain of low-side MOSFET

Key Features

FeatureDesign Value
Adaptive dead-time control14 ns minimum enforced gap between UGATE off and LGATE on (and vice versa), eliminating need for external timing resistors
Integrated bootstrap diode1.0 V forward drop at 100 mA enables rapid bootstrap capacitor recharge at 2 MHz, removing external diode requirement
3-state PWM inputSelf-adjusting thresholds (1.0 V low, ~75% of PWM amplitude high) allow reliable shutdown across 2–13.2 V controller outputs
Dual-function EN/PG pinEnables system-level coordination: driver asserts low PG signal during UVLO or thermal fault, and accepts enable from controller
Low-side sink RDS(on)0.4 Ω ensures LGATE remains <1 V during high dV/dt events, preventing unintended high-side turn-on via Miller coupling

Applications

Multi-Phase VRM for Server CPUsDesktop Voltage Regulator Module (VRM)

Use Scenario: High-current, low-voltage CPU core power delivery in dual-socket servers with dynamic load steps >100 A/μs.

IC Role / Device Role / Timing Role: Dual N-MOSFET gate driver providing synchronized, non-overlapping UGATE/LGATE signals with adaptive dead time to prevent shoot-through in 3+ phase buck stages.

Use Value: 14 ns propagation delay and 10 ns edge rates support 2 MHz operation, reducing output inductor size by 50% vs 500 kHz designs while maintaining <1% duty cycle resolution.

Use Scenario: Compact, cost-sensitive 12 V input to 1.0–1.3 V output regulation for desktop GPU and chipset power rails.

IC Role / Device Role / Timing Role: Gate driver enabling high-efficiency synchronous rectification using discrete N-MOSFETs in single- or dual-phase configurations.

Use Value: Integrated bootstrap diode and 0.4 Ω LGATE sink eliminate two external components per phase, reducing BOM count and layout area by 15%.

Notebook Synchronous Buck ConverterIsolated Secondary-Side Synchronous Rectifier

Use Scenario: Battery-powered notebook CPU/GPU core voltage regulation requiring light-load efficiency and pre-biased startup capability.

IC Role / Device Role / Timing Role: Driver supporting 3-state PWM input to coordinate with digital controllers during deep-sleep modes and enabling EN/PG-based soft-start sequencing.

Use Value: 3-state shutdown reduces quiescent current to <350 μA, extending battery life; EN/PG pin allows controller to delay PWM until VDD stabilizes and thermal margin is confirmed.

Use Scenario: High-efficiency secondary-side rectification in isolated AC/DC adapters and telecom PSUs where transformer leakage inductance causes voltage spikes.

IC Role / Device Role / Timing Role: Gate driver controlling low-side N-MOSFET in synchronous rectifier topology, leveraging PHASE pin sensing for accurate timing relative to transformer waveform.

Use Value: Wide 2–13.2 V PWM input range accommodates variable-amplitude gate drive signals from optocoupler or digital isolator outputs without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel gate driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
LM5113SDX/NOPBHigher 1.5 A UGATE/LGATE source, no integrated bootstrap diode, 12 V max VDD, 20 ns propagation delayRequires external bootstrap diode; better suited for industrial 12 V bias systems with less aggressive timing demandsSelect when higher source current is needed and board space allows external diode; not drop-in due to missing bootstrap diode and slower timing
UCC27211DRCR4 A sink/4 A source, no 3-state input, no EN/PG pin, 16 ns propagation delay, 5–16 V VDD rangeLacks 3-state shutdown and power-good signaling; requires separate enable logic and fault monitoringChoose for high-source-current applications where 3-state control is handled externally; not compatible for systems relying on TPS28225DRBT's integrated EN/PG coordination

Compared with LM5113SDX/NOPB and UCC27211DRCR, the TPS28225DRBT uniquely combines 3-state PWM compatibility, integrated bootstrap diode, and bidirectional EN/PG functionality-reducing component count and enabling coordinated fault response in compact, high-frequency VRMs without external timing or protection circuitry.

Availability

TPS28225DRBT is available at Aetrix Electronics and suitable for multi-phase VRMs, server voltage regulator modules (VRMs), and notebook synchronous buck converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for TPS28225DRBT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader delivering analog, embedded processing, and connectivity solutions for industrial, automotive, and computing markets.

The TPS28225DRBT belongs to TI's high-speed power management driver portfolio, engineered specifically for high-efficiency, high-frequency synchronous buck converters in data center, enterprise computing, and portable power applications.

FAQ

What is the maximum switching frequency supported by the TPS28225DRBT?

The TPS28225DRBT supports up to 2 MHz operation, enabled by its 14 ns propagation delay, 10 ns rise/fall times, and adaptive 14 ns dead-time control-ensuring reliable non-overlapping drive signals and minimal switching losses at high frequencies in multi-phase DC/DC converters.

Does the TPS28225DRBT require an external bootstrap diode?

No, the TPS28225DRBT integrates a low-forward-voltage (1.0 V at 100 mA) bootstrap diode, eliminating the need for an external diode and simplifying layout in half-bridge configurations-particularly beneficial in space-constrained VRM and notebook power designs.

How does the 3-state PWM input function on the TPS28225DRBT?

The TPS28225DRBT's 3-state PWM input detects high-impedance controller states: if the PWM pin voltage remains within the self-adjusting 1.0–2.0 V window for ≥250 ns, both UGATE and LGATE are forced low, disabling the power stage-critical for safe shutdown in digital multi-phase controllers with 3-state outputs.

What is the purpose of the EN/PG pin on the TPS28225DRBT?

The EN/PG pin on the TPS28225DRBT serves dual roles: applying >2.1 V enables the driver, while the device pulls the pin low during UVLO or thermal shutdown to signal fault condition to the system controller-enabling coordinated power sequencing and fault recovery without additional monitoring circuitry.

What thermal management is required for the TPS28225DRBT in the DRB package?

The TPS28225DRBT in the VSON-8 (DRB) package requires the exposed thermal pad (pin 9) to be soldered directly to a solid PCB ground plane with multiple thermal vias-achieving RθJA = 50.2°C/W and enabling continuous 4 A sink operation at 125°C junction temperature without derating.

TPS28225DRBT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-VDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
4.5V ~ 8.8V
Logic Voltage - VIL, VIH:
0.8V, 2.1V
Current - Peak Output (Source, Sink):
2A, 2A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
33 V
Rise / Fall Time (Typ):
10ns, 10ns
Operating Temperature:
-40°C ~ 125°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SON (3x3)

TPS28225DRBT FAQ

1.How can I place an order for TPS28225DRBT through Aetrix?

Please submit a Request for Quotation (RFQ) for TPS28225DRBT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPS28225DRBT reliable?

The price and inventory of TPS28225DRBT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS28225DRBT is usually 5 days.

3.What payment methods are accepted for TPS28225DRBT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS28225DRBT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPS28225DRBT?

TPS28225DRBT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPS28225DRBT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPS28225DRBT?

For technical support, including TPS28225DRBT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS28225DRBT requirements.

6.How does Aetrix verify that TPS28225DRBT is sourced from the original manufacturer or authorized distributors?

All TPS28225DRBT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS28225DRBT meets industry standards.

7.What is the process for return or replacement of TPS28225DRBT?

All TPS28225DRBT units undergo pre-shipment inspection (PSI). If there is an issue with TPS28225DRBT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPS28225DRBT part is unused and in its original packaging.

Return procedure for TPS28225DRBT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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