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Texas Instruments TPS28225TDRQ1
- Part No.:
- TPS28225TDRQ1
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
TPS28225TDRQ1.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:16,273
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Product details
Overview
TPS28225TDRQ1 from Texas Instruments is an automotive-qualified, high-frequency synchronous MOSFET driver optimized for N-channel half-bridge power stages in multi-phase DC-DC converters. It delivers 4-A sink / 2-A source gate drive, 14-ns adaptive dead time, and 14-ns propagation delay, enabling switching frequencies up to 2 MHz in wireless charging transmitters and point-of-load regulators.
For engineers reviewing the TPS28225TDRQ1 datasheet, TPS28225TDRQ1 pinout, TPS28225TDRQ1 application, or TPS28225TDRQ1 equivalent, key selection criteria include its 0.4-Ω low-side sink resistance (preventing dV/dt-induced shoot-through), integrated bootstrap diode, three-state PWM input for controlled shutdown, and dual SOIC-8/VSON-8 packaging supporting thermal management in automotive under-hood environments.
Technical Context
The TPS28225TDRQ1 implements adaptive dead-time control using internal timing logic that dynamically adjusts UGATE/LGATE turn-on delays based on phase node transitions, eliminating external dead-time programming components. Its dual-output architecture features independent high-side (UGATE) and low-side (LGATE) drivers with matched 10-ns rise/fall times and separate bootstrap supply (BOOT) and phase return (PHASE) terminals.
It integrates undervoltage lockout (UVLO) with 3.5-V rising/3.0-V falling thresholds, thermal shutdown at 160°C (rising), and a bidirectional EN/PG pin that functions as both enable input and power-good indicator - pulling low during UVLO or overtemperature events to signal system controller readiness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Gate Drive Current | 4-A sink / 2-A source capability ensures fast turn-on/off of high-Qg MOSFETs (e.g., ≥40-A per-phase current handling) |
| Propagation Delay | 14 ns (UGATE & LGATE) enables precise timing control at >1-MHz switching frequencies without skew-induced shoot-through |
| Adaptive Dead Time | 14 ns minimum enforced dead time prevents simultaneous conduction in half-bridge configurations under varying load conditions |
| Low-Side Sink RDS(on) | 0.4 Ω holds low-side MOSFET gate below threshold during high dV/dt phase node transitions, eliminating shoot-through risk |
| Input Voltage Range | 3 V to 27 V VIN supports wide-input automotive battery systems (cold-crank to load-dump); 4.5–8.0 V VDD ensures optimal gate drive efficiency |
| Operating Temp | –40°C to +125°C junction temperature range meets AEC-Q100 Grade 1 requirements for under-hood automotive applications |
| PWM Input Range | 2 V to 13.2 V amplitude accommodates controllers with varied output swing (e.g., analog PWM, digital controllers, 3.3-V/5-V logic) |
Pinout & Package
TPS28225TDRQ1 is available in two thermally optimized packages: SOIC-8 (5.00 mm × 6.20 mm) and VSON-8 (3.00 mm × 3.00 mm with exposed thermal pad). Both packages share identical pin numbering and functionality.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| UGATE (Pin 1) | High-side gate driver output | Drives gate of upper N-MOSFET; sourced/sunk by internal 2-A/2-A driver; referenced to PHASE node |
| BOOT (Pin 2) | Floating bootstrap supply | Connects to bootstrap capacitor between BOOT and PHASE; supplies gate voltage above PHASE for high-side drive |
| PWM (Pin 3) | Three-state PWM control input | Accepts 2–13.2-V pulses; enters 3-state shutdown if held within 1.0–2.0-V window for ≥250 ns |
| GND (Pin 4) | Power ground reference | Common return for all signals and internal bias circuits; thermal pad in VSON must be soldered to GND plane |
| LGATE (Pin 5) | Low-side gate driver output | Sinks 4-A / sources 2-A to drive lower N-MOSFET gate; 0.4-Ω sink impedance prevents shoot-through during dV/dt transients |
| VDD (Pin 6) | Bias supply input | 4.5–8.0 V input powering internal logic and gate drivers; bypass capacitor required between VDD and GND |
| EN/PG (Pin 7) | Enable input / Power-Good output | 1-MΩ impedance input; pulled low internally during UVLO or thermal shutdown to signal fault condition to controller |
| PHASE (Pin 8) | Half-bridge phase node connection | Connects to source of upper MOSFET and drain of lower MOSFET; provides return path for UGATE driver and bootstrap capacitor charging |
Key Features
| Feature | Design Value |
|---|---|
| Adaptive dead-time control | 14-ns minimum enforced dead time eliminates need for external timing resistors and improves reliability across temperature/voltage |
| Integrated bootstrap diode | Enables single-supply operation with N-MOSFET half-bridge; reduces BOM count and layout complexity vs discrete diode solutions |
| Three-state PWM input | 250-ns hold-off timer detects high-impedance states and forces both outputs low - critical for safe shutdown in multi-phase controllers |
| Dual-function EN/PG pin | Provides bidirectional communication: externally pulled high to enable, internally pulled low to indicate UVLO or thermal fault |
| Output active-low protection | Internal pull-downs keep UGATE/LGATE low during power-up/down, preventing accidental MOSFET turn-on before VDD stabilization |
Applications
| Multi-Phase DC-DC Converters | Synchronous Rectification |
|---|---|
|
Use Scenario: High-current CPU/GPU VRMs in ADAS domain controllers requiring >100-A output with tight transient response. IC Role / Device Role: Dual N-MOSFET gate driver controlling parallel high-side/low-side switches in interleaved buck topology. Use Value: 14-ns propagation delay and matched rise/fall times minimize phase skew; adaptive dead time maintains efficiency across load steps. |
Use Scenario: Isolated 48-V-to-12-V point-of-load converter in vehicle infotainment power supply. IC Role / Device Role: Synchronous rectifier driver replacing Schottky diodes in secondary-side LLC resonant converter. Use Value: 4-A sink current rapidly discharges secondary MOSFET gate; 0.4-Ω LGATE RDS(on) suppresses shoot-through during ZVS transitions. |
| Wireless Charging Transmitter | Automotive Pre-Biased Startup |
|
Use Scenario: 15-W Qi-compliant transmitter pad with half-bridge inverter driving series-resonant tank. IC Role / Device Role: High-frequency gate driver operating at 125–205 kHz with optional 2-MHz capability for future protocols. Use Value: 10-ns rise/fall times reduce switching losses; internal bootstrap diode simplifies high-side drive in compact coil-driver layout. |
Use Scenario: Buck regulator powering camera ECU where output capacitor is pre-charged before power-up. IC Role / Device Role: Driver enabling controlled startup via EN/PG-synchronized PWM to avoid reverse current flow. Use Value: EN/PG pin used as secondary enable allows UGATE/LGATE coordination during pre-biased conditions without external logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous MOSFET driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| LM5113-Q1 | Higher 6-A sink current but fixed 100-ns dead time; no adaptive dead-time control or integrated bootstrap diode | Preferred for ultra-high-current (>60-A) applications where dead time can be statically optimized; requires external bootstrap diode | Select LM5113-Q1 when maximum gate current is prioritized over layout simplicity and dynamic dead-time adjustment. |
| UCC27211A-Q1 | 4-A sink/4-A source with 12-ns propagation delay; lacks three-state PWM input and EN/PG bidirectional signaling | Suitable for non-3-state controllers; requires external enable logic and separate power-good monitoring circuitry | Choose UCC27211A-Q1 when symmetric sourcing/sinking is needed and system-level shutdown sequencing is handled externally. |
Compared with LM5113-Q1 and UCC27211A-Q1, the TPS28225TDRQ1 uniquely combines adaptive dead time, integrated bootstrap diode, and three-state PWM support in a single 8-pin package - reducing component count and improving robustness in automotive multi-phase and wireless charging designs.
Availability
TPS28225TDRQ1 is available at Aetrix Electronics and suitable for automotive ADAS power supplies, wireless charging transmitters, and isolated point-of-load converters requiring stable component supply across extended temperature and long product lifecycles.
Supply support for TPS28225TDRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and automotive-grade power management ICs, with decades of AEC-Q100 qualification experience.
The TPS28225TDRQ1 belongs to TI's automotive gate driver portfolio designed specifically for high-efficiency, high-frequency DC-DC conversion in safety-critical vehicle subsystems - emphasizing shoot-through prevention, thermal resilience, and controller interoperability.
FAQ
What is the maximum switching frequency supported by the TPS28225TDRQ1?
The TPS28225TDRQ1 supports switching frequencies up to 2 MHz, enabled by its 14-ns propagation delay, 10-ns rise/fall times, and adaptive dead-time control. This capability is validated under typical conditions (VDD = 7.2 V, CL = 3 nF, TJ = 25°C) and makes the TPS28225TDRQ1 suitable for high-density power supplies in automotive radar and infotainment systems where minimal footprint and high efficiency are critical.
Does the TPS28225TDRQ1 require an external bootstrap diode?
No, the TPS28225TDRQ1 includes an internal bootstrap diode, eliminating the need for an external component. This diode charges the bootstrap capacitor between BOOT and PHASE pins, enabling efficient high-side N-MOSFET drive in half-bridge configurations. The forward voltage is typically 1.0 V at 100 mA, and the diode is rated for continuous operation across the full –40°C to +125°C junction temperature range.
How does the three-state PWM input function in the TPS28225TDRQ1?
The TPS28225TDRQ1's three-state PWM input detects high-impedance states lasting ≥250 ns and forces both UGATE and LGATE low to safely disable the power stage. The 3-state window self-adjusts between 1.0 V and ~75% of the input pulse amplitude, allowing compatibility with 2–13.2-V controllers. This feature is essential for coordinated shutdown in multi-phase systems and prevents negative voltage spikes during pre-biased startup.
What thermal performance differences exist between the SOIC-8 and VSON-8 packages of the TPS28225TDRQ1?
The VSON-8 (DRB) package offers significantly better thermal performance than SOIC-8: RθJA is 50.2°C/W versus 123.2°C/W, and RθJB is 25.9°C/W versus 63.5°C/W. The exposed thermal pad in VSON-8 must be soldered to a PCB GND plane to realize this advantage. For automotive applications with sustained >1-A average gate current or ambient temperatures exceeding 85°C, the VSON-8 variant is strongly recommended to maintain TJ ≤ 125°C.
Can the EN/PG pin of the TPS28225TDRQ1 be used as a standalone enable signal without power-good feedback?
Yes, the EN/PG pin operates as a standard enable input when pulled high via ≥20-kΩ resistor; the driver activates immediately upon reaching the 2.1-V enable threshold. Power-good feedback is optional - the pin only pulls low during UVLO (VDD < 3.0 V) or thermal shutdown (TJ > 160°C). If fault reporting is not required, the system controller may treat EN/PG as a simple enable with no additional circuitry.
TPS28225TDRQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Synchronous
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 8.8V
- Logic Voltage - VIL, VIH:
- 0.8V, 2.1V
- Current - Peak Output (Source, Sink):
- 2A, 2A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 33 V
- Rise / Fall Time (Typ):
- 10ns, 10ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
TPS28225TDRQ1 FAQ
1.How can I place an order for TPS28225TDRQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for TPS28225TDRQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPS28225TDRQ1 reliable?
The price and inventory of TPS28225TDRQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS28225TDRQ1 is usually 5 days.
3.What payment methods are accepted for TPS28225TDRQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS28225TDRQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPS28225TDRQ1?
TPS28225TDRQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPS28225TDRQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPS28225TDRQ1?
For technical support, including TPS28225TDRQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS28225TDRQ1 requirements.
6.How does Aetrix verify that TPS28225TDRQ1 is sourced from the original manufacturer or authorized distributors?
All TPS28225TDRQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS28225TDRQ1 meets industry standards.
7.What is the process for return or replacement of TPS28225TDRQ1?
All TPS28225TDRQ1 units undergo pre-shipment inspection (PSI). If there is an issue with TPS28225TDRQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPS28225TDRQ1 part is unused and in its original packaging.
Return procedure for TPS28225TDRQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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