Texas Instruments TPS28226D

Overview

TPS28226D from Texas Instruments is a high-frequency dual N-channel MOSFET gate driver IC optimized for synchronous buck and multi-phase DC-DC converters. It delivers 2-A source / 4-A sink drive capability, 14-ns adaptive dead-time control, and 7-V to 8-V optimal gate drive voltage for peak efficiency. Used in server VRMs and notebook regulators where fast switching (up to 2 MHz), shoot-through prevention, and thermal robustness are critical.

For engineers reviewing the TPS28226D datasheet, TPS28226D pinout, TPS28226D application, or TPS28226D equivalent, key selection considerations include bootstrap-based high-side drive architecture, 3-state PWM input compatibility with multi-phase controllers, EN/PG bidirectional signaling for power-good feedback, and SOIC-8 package thermal pad grounding requirement.

Technical Context

The TPS28226D implements adaptive dead-time control to eliminate shoot-through by ensuring non-overlapping UGATE and LGATE transitions, with fixed 14-ns minimum dead time. Its internal bootstrap diode (VF = 1.0 V @ 100 mA) enables self-biased high-side drive without external charge pumps.

It features a 3-state PWM input circuit with 250-ns hold-off timer and self-adjusting thresholds (1.0 V fixed low, ~75% of input amplitude high), allowing seamless interoperability with controllers supporting tri-state outputs. The EN/PG pin provides bidirectional enable control and fault reporting via internal 1-kΩ series resistor and open-drain FET.

Key Specifications

Pinout & Package

The TPS28226D is housed in an 8-pin SOIC package (4.90 mm × 3.91 mm) with an exposed thermal pad on the bottom side that must be soldered and connected directly to GND for thermal performance and EMI reduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel gate driver applications.

Compared with LM5113SDX and MP8042DS-LF-Z, the TPS28226D uniquely combines 4-A sink capability, integrated bootstrap diode, adaptive 14-ns dead time, and bidirectional EN/PG-making it the only option qualified for high-performance, multi-phase VRMs requiring shoot-through immunity and controller-level fault coordination.

Availability

TPS28226D is available at Aetrix Electronics and suitable for server VRMs, notebook CPU regulators, and multi-phase desktop power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TPS28226D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-efficiency power conversion solutions.

The TPS28226D belongs to TI's high-frequency gate driver product line, engineered specifically for demanding DC-DC applications including VRMs, EVRDs, and synchronous rectifiers where speed, reliability, and thermal performance are critical.

FAQ

What is the required connection for the thermal pad on the TPS28226D SOIC package?

The exposed thermal pad on the bottom side of the TPS28226D SOIC package must be soldered and electrically connected to the GND net on the PCB. This connection is mandatory-not optional-for proper thermal dissipation, EMI suppression, and reliable operation. TI specifies direct connection to the GND plane using the shortest possible trace to minimize thermal resistance and inductance. Failure to ground the pad may result in thermal shutdown or degraded switching performance.

Does the TPS28226D support 3-state PWM inputs, and how does it behave during that mode?

Yes, the TPS28226D supports 3-state PWM inputs. When the PWM pin is held within the 1.0–2.0-V window for ≥250 ns, the driver forces both UGATE and LGATE low, turning off both external MOSFETs. This mode is essential for phase shedding in multi-phase controllers. The upper threshold self-adjusts to ~75% of the PWM signal amplitude, enabling compatibility across 2.0–13.2-V input ranges without external level-shifting.

How does the EN/PG pin function in the TPS28226D, and what happens during a fault condition?

The EN/PG pin on the TPS28226D serves dual roles: applying >2.1 V enables operation, while internal circuitry pulls it low (<0.2 V) during UVLO (VDD < 5.0 V) or thermal shutdown (TJ > 160 °C). This bidirectional behavior allows the system controller to monitor driver readiness. If the controller detects a low EN/PG signal, it knows the TPS28226D is disabled due to fault-not user command-and can delay PWM issuance until recovery.

What is the purpose and specification of the internal bootstrap diode in the TPS28226D?

The internal bootstrap diode in the TPS28226D charges the external BOOT–PHASE capacitor from VDD when the low-side MOSFET is ON. It has a typical forward voltage of 1.0 V at 100 mA, enabling efficient high-side gate drive without external components. This diode eliminates the need for an external Schottky diode, reduces BOM count, and improves layout simplicity-critical in dense VRM designs where board space is constrained.

Can the TPS28226D drive MOSFETs with gate charges exceeding 40 nC per phase, as claimed in its datasheet?

Yes-the TPS28226D datasheet explicitly states it is "capable to drive MOSFETs with ≥40-A current per phase," which correlates to gate charges well above 40 nC when paired with typical high-current N-MOSFETs (e.g., Ciss ≈ 3–5 nC/nA). Its 2-A source / 4-A sink capability, 10-ns rise/fall times (CL = 3 nF), and low 0.4-Ω LGATE sink resistance ensure robust drive strength even for large paralleled FETs used in server VRMs, provided layout minimizes gate loop inductance.