Texas Instruments TPS28226DR

Overview

TPS28226DR from Texas Instruments is a high-frequency dual N-channel MOSFET gate driver IC optimized for synchronous buck and multi-phase DC-DC converters. It delivers 2-A source / 4-A sink drive capability, 14-ns adaptive dead-time control, and integrated bootstrap diode - enabling efficient, shoot-through–free operation up to 2 MHz switching frequency in VRMs, server power supplies, and notebook regulators.

For engineers reviewing the TPS28226DR datasheet, TPS28226DR pinout, TPS28226DR application, or TPS28226DR equivalent, key selection criteria include its 3-state PWM input compatibility, EN/PG dual-function pin, thermal-pad–enabled DFN-8 package (DRB), low-side sink R_DS(on) of 0.4 Ω, and UVLO with 1.35-V hysteresis - all critical for high-density, high-reliability power stage design.

Technical Context

The TPS28226DR implements adaptive dead-time control via internal timing logic that prevents simultaneous conduction of high- and low-side MOSFETs. Its 3-state PWM input circuit self-adjusts upper threshold to 75% of input amplitude (1.0 V to 4.0 V window), enabling robust interoperability with analog/digital controllers across 2.0–13.2-V input signals.

It integrates a 1.0-V forward-drop bootstrap diode and supports bootstrapped high-side drive up to 8.8 V gate voltage. The EN/PG pin provides bidirectional communication: pulled low by internal FET during UVLO or thermal shutdown, signaling system controller readiness - while also serving as auxiliary enable input with 30-ns propagation delay relative to UGATE.

Key Specifications

Pinout & Package

TPS28226DR is packaged in an 8-pin thermally enhanced VSON (DRB) package measuring 3.0 mm × 3.0 mm, with an exposed thermal pad on the bottom side that must be soldered and connected directly to GND for optimal thermal performance and EMI suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel gate driver applications.

Compared with LM5113SD and UCC27201ADR, the TPS28226DR uniquely combines integrated bootstrap diode, adaptive 14-ns dead time, and 3-state PWM compatibility in a thermally enhanced DFN-8 - making it the preferred choice for high-density, high-efficiency multi-phase VRMs requiring precise timing control and minimal BOM count.

Availability

TPS28226DR is available at Aetrix Electronics and suitable for desktop VRMs, server multi-phase converters, and notebook DC-DC regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for TPS28226DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability electronic components.

The TPS28226DR belongs to TI's high-frequency power driver product line, designed specifically for advanced DC-DC converter topologies demanding precise timing, low shoot-through risk, and thermal resilience in space-constrained power stages.

FAQ

What is the required connection for the thermal pad on the TPS28226DR package?

The exposed thermal pad on the bottom side of the TPS28226DR must be soldered and electrically connected directly to the GND net and the GND plane of the PCB using the shortest possible trace. This connection is mandatory for thermal performance, EMI reduction, and functional reliability - failure to do so may cause thermal shutdown or degraded switching behavior in the TPS28226DR.

Does the TPS28226DR support 3-state PWM input, and how does it behave during shutdown?

Yes, the TPS28226DR supports 3-state PWM input with a self-adjusting 1.0–4.0-V window and 250-ns hold-off time. When the PWM signal remains within this window, both UGATE and LGATE are driven low, turning off both external MOSFETs. This feature enables coordinated multi-phase shutdown without requiring external logic - a core behavior confirmed in the TPS28226DR datasheet Section 7.3.4.

What is the maximum switching frequency supported by the TPS28226DR?

The TPS28226DR supports up to 2 MHz switching frequency, enabled by its 14-ns propagation delays, 10-ns rise/fall times (CL = 3 nF), and adaptive dead-time control. This specification is explicitly stated in the "Features" section and verified in Section 6.6 Switching Characteristics of the TPS28226DR datasheet (SLUS791A).

How does the EN/PG pin function in the TPS28226DR, and what happens during UVLO?

The EN/PG pin serves dual roles: as an enable input (≥2.1 V to activate) and as a power-good indicator (pulled low internally during UVLO or thermal shutdown). During UVLO, the TPS28226DR's internal MOSFET pulls EN/PG to GND through a 1-kΩ resistor - signaling system controller readiness. This bidirectional behavior is documented in Section 7.3.3 of the TPS28226DR datasheet.

What is the purpose of the integrated bootstrap diode in the TPS28226DR?

The integrated bootstrap diode in the TPS28226DR charges the external bootstrap capacitor from VDD when the low-side MOSFET is on, enabling high-side N-channel drive in half-bridge configurations. With a forward voltage of 1.0 V at 100 mA, it minimizes conduction loss and supports reliable high-frequency operation - a key differentiator versus drivers requiring external diodes, as specified in Section 7.3.5 of the TPS28226DR datasheet.