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Texas Instruments TPS51604DSGR

Part No.:
TPS51604DSGR
Manufacturer:
Texas Instruments
Category:
Gate Drivers
Package:
8-WFDFN Exposed Pad
Datasheet:
AetrixTPS51604DSGR.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8WSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,068

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Product details

Overview

TPS51604DSGR from Texas Instruments is a synchronous buck FET driver optimized for high-frequency CPU VCORE power delivery. It drives both high-side and low-side N-channel MOSFETs, features adaptive dead-time control (0–35 ns rising, 0–25 ns falling), integrated bootstrap switch (12–24 Ω RDS(on)), and supports FCCM/DCM mode selection via SKIP pin. Used in ultrabook and tablet CPU core power stages with 4.5–28 V input and 5-V gate drive.

For engineers reviewing the TPS51604DSGR datasheet, TPS51604DSGR pinout, TPS51604DSGR application, or TPS51604DSGR equivalent, this page delivers verified electrical characteristics, thermal metrics (RθJA = 63.1°C/W), tri-state timing (tTSKR = 1 µs), zero-crossing offset (±2.25 mV), and WSON-8 package layout guidance - all critical for high-efficiency, high-frequency buck converter design.

Technical Context

The TPS51604DSGR implements adaptive dead-time control to minimize shoot-through risk while reducing body diode conduction losses; its DRVH rise/fall propagation delays are 40 ns and 25 ns respectively with 3.3 nF load. The integrated BST switch replaces external diodes, enabling efficient bootstrap capacitor charging using DRVL signal gating.

It supports three functional modes: FCCM (SKIP = HI), DCM (SKIP = LO with auto zero-crossing detection on SW pin), and very-low-power state (both PWM and SKIP tri-stated, ICC = 8 µA). UVLO thresholds are 4.15 V (rising) and 3.7 V (falling) with 0.2 V hysteresis, ensuring robust startup under varying VDD conditions.

Key Specifications

Parameter Value and Actual Design Meaning
VIN Range 4.5 V to 28 V input voltage range supports adapter, battery, and NVDC power sources in portable CPU systems.
Gate Drive Voltage 5-V optimized drive (VDD = 4.5–5.5 V) ensures full enhancement of common 5-V logic-level FETs like CSD87381.
Dead-Time Control Adaptive dead-time (0–35 ns rising, 0–25 ns falling) prevents shoot-through while minimizing low-side body diode conduction time.
Quiescent Current 8 µA in very-low-power mode (PWM & SKIP tri-stated) enables rapid wake-up (<50 µs) for dynamic power management.
Bootstrap Switch RDS(on) 12–24 Ω on-resistance reduces conduction loss and improves bootstrap capacitor recharge efficiency vs. discrete diode solutions.
Zero-Crossing Offset ±2.25 mV offset at SW pin enables accurate inductor current valley detection for reliable DCM transition.
Thermal Resistance RθJA = 63.1°C/W (WSON-8 package) supports operation up to 105°C junction temperature in compact layouts.

Pinout & Package

TPS51604DSGR is housed in a thermally enhanced 2.00 mm × 2.00 mm, 8-pin WSON (DSG) package with exposed thermal pad tied to GND. The package supports –40°C to 105°C operation and is RoHS-compliant with NiPdAu lead finish and MSL Level-1 rating.

Pin/Terminal Circuit Role Design Meaning
BST (Pin 1) Bootstrap supply input Provides gate drive voltage for high-side N-FET; connects to BST–SW capacitor; internal FET replaces external diode.
PWM (Pin 2) Digital control input Tri-state–enabled input; forces DRVH/DRVL low when floating; accepts 3.3 V or 5 V logic levels with VIH = 2.65 V, VIL = 0.6 V.
SKIP (Pin 3) Mode selection input Selects FCCM (HI), DCM (LO), or very-low-power (tri-state); zero-crossing comparator enabled only when LOW.
VDD (Pin 4) Driver power supply 5-V nominal supply; requires ≥1 µF ceramic decoupling to GND; UVLO active at 4.15 V (rising) / 3.7 V (falling).
DRVL (Pin 5) Low-side gate driver output Drives low-side N-FET gate; 15 ns rise time, 10 ns fall time (3.3 nF load); sink/source resistance 0.4–3 Ω.
GND (Pin 6) Reference ground Return path for DRVL and device reference; must connect thermal pad to system GND plane via multiple vias.
SW (Pin 7) Switch node interface High-side driver return and zero-crossing sense input; monitors inductor current valley for DCM entry/exit.
DRVH (Pin 8) High-side gate driver output Drives high-side N-FET gate; 30 ns rise time, 8 ns fall time (3.3 nF load); source/sink resistance 0.5–8 Ω.

Key Features

Feature Design Value
Reduced dead-time drive circuit Minimizes simultaneous conduction risk while maintaining <35 ns adaptive dead-time, directly improving light-load efficiency.
Automatic zero crossing detection Uses SW pin sensing with ±2.25 mV offset to trigger DCM mode at true inductor current zero-crossing, eliminating forced discontinuous operation.
Multiple low-power modes 130 µA quiescent current (PWM tri-stated), 8 µA (PWM + SKIP tri-stated), enabling sub-100 µA system sleep states.
Integrated BST switch drive strength 12–24 Ω RDS(on) provides faster, lower-loss bootstrap capacitor recharge than discrete diodes-critical for ultrabook FETs.
Optimized signal path delays 40 ns DRVH rise propagation delay and 15 ns DRVL rise delay enable stable >1 MHz switching with tight timing margins.

Applications

Ultrabook CPU Core Power Tablet High-Frequency VCORE

Use Scenario: Dual-phase 1.2-V/12-A CPU core supply in fanless ultrabook platforms with 6–20 V input rails.

IC Role / Device Role / Timing Role: Synchronous buck FET driver controlling high-side/low-side NexFET™ power blocks (e.g., CSD87381) at 1 MHz.

Use Value: Adaptive dead-time and zero-crossing detection maintain >90% efficiency from 1 A to 12 A load, reducing thermal load in thin form factors.

Use Scenario: Single-phase 1.8-V/8-A processor supply in 7–10 inch tablets powered by 5-V or 12-V adapters.

IC Role / Device Role / Timing Role: Gate driver interfacing with TI TPS51632 controller; SKIP pin enables seamless DCM entry below 0.5 A.

Use Value: 8 µA very-low-power mode extends battery life during display-off/idle states without compromising wake-up latency (<50 µs).

Mobile SoC Power Delivery Embedded NVDC Systems

Use Scenario: Power delivery for ARM-based SoCs in industrial handhelds with battery + adapter dual-input architecture.

IC Role / Device Role / Timing Role: FET driver operating across –40°C to 105°C ambient; SW pin senses zero current for adaptive mode transitions.

Use Value: Robust UVLO (4.15 V rising threshold) prevents erratic operation during battery sag, ensuring clean power sequencing.

Use Scenario: Non-synchronous DC-DC conversion in NVDC (Narrow Voltage DC) systems where input varies between 5 V and 12 V rails.

IC Role / Device Role / Timing Role: Driver paired with discrete MOSFETs; VDD regulated to 5 V ensures consistent gate drive strength across input range.

Use Value: 5-V optimized drive capability maintains >95% peak efficiency even with 28 V max VIN, avoiding gate drive droop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck FET driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
TPS51605DSGR Same WSON-8 package and pinout; adds integrated overcurrent protection (OCP) and programmable soft-start not present in TPS51604DSGR. Suitable for designs requiring fault reporting and controlled inrush; not drop-in due to added OCP logic affecting enable sequencing. Select TPS51605DSGR only if OCP functionality is required; otherwise TPS51604DSGR offers lower BOM count and identical timing performance.
ISL6322IRZ 8-pin QFN package (not pin-compatible); higher 12-V gate drive capability; no integrated BST switch - requires external bootstrap diode. Targeted at server VRMs with higher input voltages; lacks tri-state low-power modes (ICC = 2 mA typical vs. 8 µA). Choose ISL6322IRZ for 12-V gate drive needs or legacy board reuse; TPS51604DSGR is preferred for ultrabook/tablet space-constrained, low-IQ designs.

Compared with TPS51604DSGR, TPS51605DSGR adds protection features at the cost of complexity, while ISL6322IRZ trades integration and ultra-low-power capability for higher-voltage flexibility - making TPS51604DSGR optimal for compact, battery-sensitive CPU core supplies.

Availability

TPS51604DSGR is available at Aetrix Electronics and suitable for ultrabook CPU core power, tablet high-frequency VCORE, and embedded NVDC systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TPS51604DSGR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog and embedded processing technologies, with leadership in power management ICs and high-performance analog solutions.

The TPS51604DSGR belongs to TI's CPU core power driver product line, designed specifically for high-frequency, high-efficiency synchronous buck converters in portable computing platforms requiring minimal footprint and ultra-low quiescent current.

FAQ

What is the recommended input voltage range for the VDD pin of the TPS51604DSGR?

The TPS51604DSGR requires a VDD supply between 4.5 V and 5.5 V, with 5 V being the nominal operating voltage. A ceramic capacitor of at least 1 µF must be placed between VDD and GND for stable operation. Operation outside this range risks UVLO activation or damage, as absolute maximum VDD is 6 V.

How does the SKIP pin affect the operational mode of the TPS51604DSGR?

The SKIP pin selects between FCCM (SKIP = HI), DCM (SKIP = LO), and very-low-power mode (SKIP = tri-state). When LOW, the zero-crossing comparator activates to detect inductor current zero-crossing for DCM entry; when tri-stated, TPS51604DSGR draws only 8 µA and resumes switching within 50 µs upon voltage assertion.

What is the function of the SW pin on the TPS51604DSGR?

The SW pin serves two critical roles in the TPS51604DSGR: it acts as the return path for the high-side gate driver (DRVH), and functions as the zero-crossing sense input for adaptive DCM mode. Its ±2.25 mV offset enables precise detection of inductor current valley, triggering low-side FET turn-off at true zero current.

Can the TPS51604DSGR drive both 3.3-V and 5-V logic-level MOSFETs?

Yes, the TPS51604DSGR is optimized for 5-V gate drive and supports both 3.3-V and 5-V logic-level FETs. Its PWM input thresholds (VIH = 2.65 V, VIL = 0.6 V) accommodate standard logic families, and its DRVH/DRVL outputs deliver full 5-V swing with low source/sink resistance (0.5–8 Ω), ensuring fast, robust FET switching.

What thermal considerations apply to the TPS51604DSGR in high-power applications?

The TPS51604DSGR has RθJA = 63.1°C/W in its WSON-8 package. For high-current applications, the exposed thermal pad must be soldered to a solid GND plane using multiple thermal vias. Layout must minimize SW and GND loop area to reduce EMI and switching losses that elevate junction temperature beyond the 105°C maximum rating.

TPS51604DSGR Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-WFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Synchronous
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
4.5V ~ 5.5V
Logic Voltage - VIL, VIH:
0.6V, 2.65V
Current - Peak Output (Source, Sink):
-
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
34 V
Rise / Fall Time (Typ):
30ns, 8ns
Operating Temperature:
-40°C ~ 105°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WSON (2x2)

TPS51604DSGR FAQ

1.How can I place an order for TPS51604DSGR through Aetrix?

Please submit a Request for Quotation (RFQ) for TPS51604DSGR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPS51604DSGR reliable?

The price and inventory of TPS51604DSGR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPS51604DSGR is usually 5 days.

3.What payment methods are accepted for TPS51604DSGR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPS51604DSGR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPS51604DSGR?

TPS51604DSGR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPS51604DSGR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPS51604DSGR?

For technical support, including TPS51604DSGR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPS51604DSGR requirements.

6.How does Aetrix verify that TPS51604DSGR is sourced from the original manufacturer or authorized distributors?

All TPS51604DSGR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPS51604DSGR meets industry standards.

7.What is the process for return or replacement of TPS51604DSGR?

All TPS51604DSGR units undergo pre-shipment inspection (PSI). If there is an issue with TPS51604DSGR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPS51604DSGR part is unused and in its original packaging.

Return procedure for TPS51604DSGR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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