Texas Instruments TPS65560RGTT

Overview

TPS65560RGTT from Texas Instruments is an integrated photo flash charger and IGBT driver IC for xenon flash systems, featuring a 50-V integrated power switch, programmable peak current (0.9–1.8 A), 1.6–12 V input battery voltage range, and 16-pin QFN (RGT) package. It enables fast, high-efficiency flash capacitor charging and controlled IGBT-triggered discharge in compact digital camera modules.

For engineers reviewing the TPS65560RGTT datasheet, TPS65560RGTT pinout, TPS65560RGTT application, or TPS65560RGTT equivalent, key selection criteria include primary-side output voltage feedback, thermal shutdown at 160°C, MAX ON/OFF time control (50–160 µs / 25–80 µs), and open-drain XFULL charge-complete indicator functionality.

Technical Context

The TPS65560RGTT implements a primary-side-controlled flyback topology with internal 50-V/2-A power switch and analog peak-current regulation via the I_PEAK pin. Its control loop uses zero-current detection (V(ZERO) = 1–60 mV) and full-charge detection (V(FULL) = 28.6–29.4 V) to terminate charging without secondary-side sensing.

It integrates dual protection logic: OVDS overvoltage shutdown triggered by SW pin voltage exceeding 0.95–1.45 V during ON-time, and thermal disable at 150–170°C. The IGBT driver provides asymmetric gate drive (R(IGBT1) = 8–19.4 Ω pull-up; R(IGBT2) = 36–70 Ω pull-down) synchronized to CHG and F_ON inputs.

Key Specifications

Pinout & Package

TPS65560RGTT is housed in a 16-pin VQFN package (RGT) with 3.0 mm × 3.0 mm body, 1 mm max height, and exposed thermal pad requiring soldering to PCB ground plane for thermal and mechanical integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar photo flash charger and IGBT driver applications.

Compared with TPS65560RGTT, TPS65561RGTT offers tighter peak-current control for low-energy flashes but sacrifices maximum output capability, while MAX77650EWL+ trades dedicated IGBT drive for broader system integration - neither is pin-compatible, and both require PCB layout changes.

Availability

TPS65560RGTT is available at Aetrix Electronics and suitable for digital still cameras, mobile phone flash modules, optical film cameras, and PDA imaging systems requiring stable component supply across extended product lifecycles.

Supply support for TPS65560RGTT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, delivering analog and embedded processing solutions for industrial, automotive, and consumer markets.

The TPS65560RGTT belongs to TI's photo flash power management product line, designed specifically to replace discrete boost converters and IGBT drivers in xenon flash applications with a single-chip, thermally robust solution.

FAQ

What is the recommended input capacitor configuration for TPS65560RGTT?

The TPS65560RGTT requires dual-input capacitance on VBAT: a 10-µF ceramic capacitor placed near the battery connector and a 1-µF ceramic capacitor located adjacent to the IC. This decoupling strategy suppresses low- and high-frequency noise, ensuring stable switching under transient load conditions. The VCC pin additionally needs a 1-µF ceramic capacitor directly at the pin. All capacitors must be X5R/X7R dielectric with 10 V rating minimum.

How does the TPS65560RGTT detect full charge without secondary-side sensing?

The TPS65560RGTT detects full charge using primary-side kickback voltage monitoring. When the transformer's stored energy discharges into the flash capacitor, the reflected voltage at the SW pin rises. Once (V(SW) − VBAT) exceeds V(FULL) = 28.6–29.4 V, the internal comparator asserts XFULL low. This eliminates optocouplers or secondary-side voltage dividers, reducing cost and improving reliability in TPS65560RGTT-based designs.

Can TPS65560RGTT drive multiple IGBTs in parallel?

The TPS65560RGTT's G_IGBT output is rated for driving a single standard IGBT gate (typical Qg ≈ 20 nC). Driving multiple IGBTs in parallel exceeds its 8–19.4 Ω pull-up and 36–70 Ω pull-down capability, risking slow turn-on/turn-off and shoot-through. For multi-IGBT configurations, TI recommends using TPS65560RGTT to drive a dedicated high-current gate driver buffer stage rather than connecting directly to multiple gates.

What happens if the TPS65560RGTT encounters an OVDS fault condition?

When the TPS65560RGTT detects SW pin voltage exceeding 0.95–1.45 V during switch ON-time, it immediately latches off all switching activity and holds XFULL high (high-impedance). The device remains disabled until CHG is cycled low-then-high. This OVDS response protects against primary-side shorts and transformer saturation faults. No automatic retry occurs - host MCU must implement fault recovery logic to reinitiate charging after verifying circuit integrity.

Is the TPS65560RGTT RoHS compliant and what is its MSL rating?

Yes, the TPS65560RGTT is RoHS compliant (lead-free, NIPDAU finish) and carries an MSL Level-2 rating (260°C peak reflow, 1-year floor life). Its VQFN (RGT) package requires storage in dry pack with desiccant and humidity indicator per JEDEC J-STD-033. Post-opening, the device must be assembled within 1 year or baked per standard guidelines before reflow to prevent popcorning.