My Inquiry
My Account
Vishay General Semiconductor - Diodes Division TPSMA13HE3_A/I
- Part No.:
- TPSMA13HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
TPSMA13HE3_A/I.pdf
- Description:
- TVS DIODE 10.5VWM 19VC DO214AC
- Quantity:
- Payment:
- Shipping:
Inventory:6,060
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMA13HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SMA (DO-214AC) package, designed for clamping inductive switching and lightning-induced transients on power/signal lines. It features 13.0 V nominal breakdown voltage (VBR), 11.1 V stand-off voltage (VWM), 22.0 A peak pulse current (IPPM), 18.2 V clamping voltage (VC) at IPPM, and 185 °C maximum junction temperature - deployed in automotive sensor signal protection and industrial power rail conditioning.
For engineers reviewing the TPSMA13HE3_A/I datasheet, TPSMA13HE3_A/I pinout, TPSMA13HE3_A/I application, or TPSMA13HE3_A/I equivalent, key selection criteria include unidirectional polarity, 400 W 10/1000 μs peak pulse power rating, AEC-Q101 qualification status, TJ = 185 °C capability, and SMA package thermal performance under high-reliability PCB layouts.
Technical Context
This TVS diode operates as a voltage-clamping device in parallel with protected circuitry, triggering when reverse voltage exceeds its 13.0 V nominal breakdown threshold. Its passivated anisotropic rectifier structure ensures stable leakage (<1.0 μA at VWM) and low incremental surge resistance, enabling precise overvoltage limiting during fast transients.
The device is rated for 400 W peak pulse power (10/1000 μs waveform, 0.01% duty cycle), with clamping voltage held to 18.2 V at 22.0 A, and exhibits +0.072 %/°C temperature coefficient of VBR. It meets MSL Level 1 per J-STD-020 and supports reflow up to 260 °C peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (Nominal) | 13.0 V - precise breakdown threshold for reliable transient detection and clamping initiation |
| VWM | 11.1 V - maximum continuous reverse operating voltage before leakage rises significantly |
| VC @ IPPM | 18.2 V - clamped voltage seen by downstream ICs during 22.0 A surge, limiting stress on protected components |
| IPPM | 22.0 A - peak surge current it safely diverts without failure under standard 10/1000 μs test waveform |
| PPPM | 400 W - transient energy-handling capacity compatible with automotive load-dump and ESD immunity requirements |
| TJ max. | 185 °C - enables operation in under-hood automotive environments and high-power industrial enclosures |
| αT | +0.072 %/°C - predictable VBR drift over temperature, critical for design margining in wide-temperature systems |
Pinout & Package
Package: SMA (DO-214AC), surface-mount, cathode indicated by color band. Dimensions: 4.93 mm × 3.99 mm × 2.29 mm (L × W × H), with 5.0 mm × 5.0 mm copper pad layout recommended for thermal derating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts surge current to ground when VREV > VBR |
| Anode | Reference / ground return | Typically tied to system ground plane; completes clamping path during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per JEDEC standards |
| 185 °C junction rating | Supports sustained operation in high-ambient environments such as engine control units and motor drives |
| 400 W peak pulse power | Handles repetitive 10/1000 μs transients without degradation, meeting ISO 7637-2 Pulse 1/2/5a requirements |
| Low clamping ratio (VC/VBR ≈ 1.4) | Minimizes overvoltage overshoot during clamping, reducing risk of latch-up or gate oxide damage in MOSFETs/ICs |
| MSL Level 1, 260 °C reflow | Enables standard SMT assembly without moisture sensitivity concerns or baking requirements |
Applications
| Automotive Sensor Protection | Industrial Power Rail Clamping |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load dump and ESD in vehicle ECUs. IC Role / Device Role / Timing Role: Parallel-connected transient shunt that activates within nanoseconds to clamp voltage spikes above 13.0 V. Use Value: Prevents false triggering and permanent damage to 3.3 V/5 V signal chain components while maintaining signal integrity under ISO 16750-2 conditions. | Use Scenario: Safeguarding 12 V/24 V DC input rails of PLC modules and motor controllers against inductive kickback from solenoids and relays. IC Role / Device Role / Timing Role: Standby overvoltage protector that remains non-conductive below 11.1 V and clamps to ≤18.2 V during 22 A surges. Use Value: Eliminates need for bulkier MOVs or multi-stage protection, reducing BOM count and PCB area while sustaining 185 °C ambient operation. |
| Consumer Device USB Port Protection | Telecom Line Interface Protection |
Use Scenario: Shielding USB 2.0 data lines and VBUS in smart home hubs and set-top boxes from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS placed directly at connector entry point to divert ±8 kV contact ESD per IEC 61000-4-2. Use Value: Maintains signal fidelity with minimal parasitic capacitance while delivering sub-100 ns response and <1.0 μA leakage at 11.1 V. | Use Scenario: Protecting Ethernet PHY interfaces and DSL line drivers from lightning-induced surges on outdoor-facing telecom equipment. IC Role / Device Role / Timing Role: Primary-level surge suppressor mounted at board edge to absorb up to 400 W of induced energy before secondary protection stages. Use Value: Enables compliance with ITU-T K.20/K.21 and GR-1089-CORE standards using a single discrete component with proven field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ13A | Same VBR (13.0 V), but SMB package (DO-214AA); 600 W PPPM, higher IPPM (33.0 A), larger footprint | Better suited for higher-energy transients where board space allows; not drop-in due to different pad layout and thermal mass | Select when surge energy exceeds 400 W or when legacy SMB layout exists; verify thermal relief on 5.0 mm × 5.0 mm pads |
| 1.5KE13A | Through-hole DO-201 package; same VBR and PPPM; lower thermal performance (TJ max = 175 °C), no AEC-Q101 qualification | Targeted at cost-sensitive industrial power supplies where reflow compatibility and automotive qualification are not required | Choose only for non-automotive, non-SMT designs; avoid where high-reliability solder joints or under-hood operation is needed |
Compared with SMBJ13A and 1.5KE13A, the TPSMA13HE3_A/I offers optimal balance of AEC-Q101 qualification, 185 °C operation, and compact SMA footprint - making it preferred for space-constrained, high-temperature automotive and industrial PCBs requiring validated long-term reliability.
Availability
TPSMA13HE3_A/I is available at Aetrix Electronics and suitable for automotive sensor protection, industrial power rail clamping, and telecom line interface protection requiring stable component supply, full traceability, and lifecycle continuity.
Supply support for TPSMA13HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, thermal performance, and automotive qualification.
The TPSMA series belongs to Vishay's PAR® transient voltage suppressor product line, engineered specifically for high-temperature, high-reliability clamping in automotive, industrial, and telecom infrastructure applications where consistent VBR stability and AEC-Q101 compliance are mandatory.
FAQ
What is the breakdown voltage tolerance for TPSMA13HE3_A/I?
The TPSMA13HE3_A/I has a specified breakdown voltage range of 12.40 V (min) to 13.70 V (max) at 1.0 mA test current, with 13.0 V as the nominal value. This ±5% tolerance is confirmed in the Electrical Characteristics table of Vishay document 88405 and applies across the full operating temperature range when adjusted using the +0.072 %/°C temperature coefficient. The TPSMA13HE3_A/I maintains this specification under JEDEC-standard test conditions.
Is TPSMA13HE3_A/I RoHS-compliant and halogen-free?
Yes, the TPSMA13HE3_A/I carries the HE3 suffix, indicating it is RoHS-compliant and AEC-Q101 qualified. However, it is not halogen-free; halogen-free versions use the HM3 suffix (e.g., TPSMA13AHM3_A/I). The HE3 variant meets JESD201 Class 2 whisker resistance and UL 94 V-0 flammability requirements, with matte tin-plated leads solderable per J-STD-002.
What is the maximum clamping voltage of TPSMA13HE3_A/I at its rated peak pulse current?
The maximum clamping voltage (VC) of TPSMA13HE3_A/I is 18.2 V at 22.0 A peak pulse current (IPPM) under the standard 10/1000 μs waveform. This value is measured per Figure 3 in Vishay document 88405 and represents the worst-case voltage imposed on protected circuitry during a full-rated surge event. The TPSMA13HE3_A/I achieves this with low incremental surge resistance, ensuring predictable protection margins.
Can TPSMA13HE3_A/I be used in bidirectional configurations?
No, TPSMA13HE3_A/I is unidirectional only, as explicitly stated in the Features section of the datasheet. It conducts only in reverse bias above VBR and blocks forward current like a standard diode. For bidirectional protection, Vishay offers separate dual-diode configurations (e.g., TPSMA13CA), but the TPSMA13HE3_A/I itself does not support symmetrical clamping in both polarities.
What is the thermal resistance junction-to-ambient (RθJA) for TPSMA13HE3_A/I in standard mounting?
Vishay does not publish a specific RθJA value for TPSMA13HE3_A/I in document 88405; thermal performance is characterized via derating curves (Figure 2) based on PCB copper pad area. With the recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal, the TPSMA13HE3_A/I sustains full 400 W pulse power at TA = 25 °C and derates linearly above that ambient. Actual RθJA depends on board stack-up and airflow, so system-level thermal validation is required for TJ calculation.
TPSMA13HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10.5V
- Voltage - Breakdown (Min):
- 11.7V
- Voltage - Clamping (Max) @ Ipp:
- 19V
- Current - Peak Pulse (10/1000µs):
- 21.1A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
TPSMA13HE3_A/I FAQ
1.How can I place an order for TPSMA13HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMA13HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMA13HE3_A/I reliable?
The price and inventory of TPSMA13HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMA13HE3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMA13HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMA13HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMA13HE3_A/I?
TPSMA13HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMA13HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMA13HE3_A/I?
For technical support, including TPSMA13HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMA13HE3_A/I requirements.
6.How does Aetrix verify that TPSMA13HE3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMA13HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMA13HE3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMA13HE3_A/I?
All TPSMA13HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMA13HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMA13HE3_A/I part is unused and in its original packaging.
Return procedure for TPSMA13HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMA13HE3_A/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
