Vishay General Semiconductor - Diodes Division TPSMA36AHE3_B/I
- Part No.:
- TPSMA36AHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AC, SMA
- Datasheet:
-
TPSMA36AHE3_B/I.pdf
- Description:
- TVS DIODE 30.8VWM 49.9VC DO214AC
- Quantity:
- Payment:

- Shipping:

Inventory:4,550
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMA36AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) diode in SMA (DO-214AC) package, designed for clamping voltage transients on power and signal lines. It features 36.0 V nominal breakdown voltage (VBR), 30.8 V stand-off voltage (VWM), 400 W peak pulse power (10/1000 µs), 8.0 A peak pulse current (IPPM), and 49.9 V maximum clamping voltage (VC) - used to protect automotive-grade MOSFETs and sensor interfaces against lightning-induced surges and inductive switching spikes.
For engineers reviewing the TPSMA36AHE3_B/I datasheet, TPSMA36AHE3_B/I pinout, TPSMA36AHE3_B/I application, or TPSMA36AHE3_B/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 185 °C junction temperature rating, low clamping ratio (VC/VBR = 1.39), and RoHS-compliant matte tin-plated terminals suitable for J-STD-002 soldering.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology with optimized junction passivation for stable performance under high-temperature stress. Its unidirectional architecture provides forward conduction only during overvoltage events, enabling precise clamping without reverse leakage degradation at VWM.
Rated for 400 W peak pulse power per 10/1000 µs waveform and 40 A non-repetitive surge current (8.3 ms half-sine), it operates across -65 °C to +185 °C junction temperature range and meets MSL Level 1 (260 °C reflow peak), supporting automotive and industrial PCB assembly requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 34.2 V / 36.0 V / 37.8 V - defines precise voltage threshold at which avalanche conduction begins under 1 mA test current |
| VWM | 30.8 V - maximum continuous reverse operating voltage before leakage exceeds 1 μA, ensuring no false triggering in normal operation |
| VC @ IPPM | 49.9 V - clamped voltage seen by protected circuit during full 8.0 A transient, limiting stress on downstream ICs |
| PPPM | 400 W - peak transient energy absorption capability using standard 10/1000 µs waveform, validated per ANSI/IEEE C62.35 |
| TJ max. | +185 °C - enables reliable operation in under-hood automotive environments and high-power industrial enclosures |
| Polarity | Unidirectional - blocks reverse current until VBR exceeded, then clamps positive transients to cathode side |
| Package | SMA (DO-214AC) - industry-standard surface-mount outline with 0.208" x 0.157" footprint and 0.078" lead spacing |
Pinout & Package
SMA (DO-214AC) package with axial leads: cathode indicated by color band; anode and cathode terminals are coplanar, matte tin plated, and compliant with J-STD-002 solderability standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient voltage reference node | Connected to protected line; conducts avalanche current when line voltage exceeds VBR, shunting surge to ground |
| Anode | Reference return path | Typically tied to system ground or low-impedance return plane; completes clamping loop during overvoltage event |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements including HTGB, HTRB, and temperature cycling |
| Junction passivation | Reduces surface leakage and improves long-term reliability under humidity and thermal cycling conditions |
| Low clamping ratio (VC/VBR) | 1.39 - minimizes overvoltage margin between clamp and protected device's absolute maximum rating |
| MSL Level 1 | Supports unlimited floor life and single-reflow at 260 °C peak, eliminating bake requirements prior to SMT assembly |
| 185 °C TJ rating | Enables use in engine control units, DC-DC converters, and motor drivers where ambient temperatures exceed 125 °C |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator ripple transients. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power rail and chassis ground to clamp surges up to ISO 7637-2 Pulse 5a. Use Value: Withstands 400 W pulses and maintains VC ≤ 49.9 V, preventing damage to 36 V-rated power management ICs. |
Use Scenario: Shielding analog output lines of pressure sensors in factory automation systems. IC Role / Device Role / Timing Role: Low-capacitance TVS mounted directly at connector entry point to suppress ESD and cable discharge events. Use Value: 1.0 μA leakage at 30.8 V ensures minimal signal offset drift in precision 4–20 mA loops. |
| Telecom DC Power Input Protection | Consumer USB-C Port Surge Suppression |
|
Use Scenario: Safeguarding PoE-powered switches against induced surges on 48 V DC input rails. IC Role / Device Role / Timing Role: Primary clamping device on secondary-side DC bus, coordinated with upstream MOVs and fuses. Use Value: 8.0 A IPPM and 49.9 V VC ensure compliance with IEC 61000-4-5 Level 3 (1 kV/2 Ω) testing. |
Use Scenario: Adding robustness to USB-C receptacles exposed to accidental hot-plug and static discharge. IC Role / Device Role / Timing Role: Unidirectional TVS placed on VBUS line to absorb ±15 kV contact ESD per IEC 61000-4-2. Use Value: AEC-Q101 qualification and 185 °C rating support extended lifetime in thermally constrained portable enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A | Same VBR (36.0 V) and PPPM (400 W), but SMB (DO-214AA) package - 20 % larger footprint and 0.15 mm higher profile | Less suitable for ultra-dense layouts; requires revised pad stack and stencil aperture | Select when board space allows larger package and legacy SMB footprint compatibility is required |
| SMCJ36A | Higher PPPM (1500 W), same VBR, but SMC (DO-214AB) package - 3× larger size and 2.5× higher thermal mass | Used where multi-pulse immunity or sustained surge handling is critical, e.g., AC mains inputs | Choose only if 400 W is insufficient; otherwise, TPSMA36AHE3_B/I offers better layout efficiency and cost-per-protection |
Compared with SMBJ36A and SMCJ36A, the TPSMA36AHE3_B/I delivers identical electrical protection in the smallest standardized surface-mount TVS outline (SMA), enabling higher board density and lower assembly cost while maintaining AEC-Q101 qualification and 185 °C operation.
Availability
TPSMA36AHE3_B/I is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface design, and telecom DC input protection requiring stable component supply and long-term lifecycle assurance.
Supply support for TPSMA36AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.
The TPSMA36AHE3_B/I belongs to Vishay's PAR® family of transient voltage suppressors, engineered specifically for high-temperature stability, AEC-Q101 compliance, and repeatable clamping performance in harsh electromagnetic environments.
FAQ
What is the maximum clamping voltage of the TPSMA36AHE3_B/I under rated surge conditions?
The TPSMA36AHE3_B/I has a maximum clamping voltage (VC) of 49.9 V when subjected to its rated 8.0 A peak pulse current (IPPM) using the standard 10/1000 µs waveform. This value is measured at TA = 25 °C on PCBs with 0.2" × 0.2" copper pads per terminal, and represents the upper limit of voltage imposed on the protected circuit during transient suppression. The TPSMA36AHE3_B/I maintains this clamping performance across its full operating temperature range.
Is the TPSMA36AHE3_B/I qualified for automotive applications?
Yes, the TPSMA36AHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's documentation for base part numbers ending in HE3 or HM3. It undergoes rigorous stress testing including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling to validate reliability in automotive environments. The "HE3" suffix in TPSMA36AHE3_B/I explicitly denotes RoHS-compliant and AEC-Q101 qualified construction.
What is the difference between TPSMA36AHE3_B/I and TPSMA36AHM3_B/I?
The TPSMA36AHE3_B/I uses matte tin-plated leads and meets JESD 201 Class 2 whisker resistance, while the TPSMA36AHM3_B/I adds halogen-free molding compound in addition to RoHS compliance and AEC-Q101 qualification. Both share identical electrical specifications, package dimensions, and thermal ratings. The choice depends on material compliance requirements: HE3 suffices for standard RoHS, whereas HM3 is required where halogen-free content is mandated.
Does the TPSMA36AHE3_B/I have bidirectional polarity?
No, the TPSMA36AHE3_B/I is unidirectional only, as stated in the Vishay datasheet. It conducts avalanche current when the cathode-to-anode voltage exceeds the 36.0 V nominal breakdown voltage, but blocks reverse current below VWM = 30.8 V. For bidirectional protection, a separate device such as TPSMA36CA would be required - the TPSMA36AHE3_B/I is not rated or characterized for symmetrical clamping.
What is the thermal resistance junction-to-ambient (RθJA) for the TPSMA36AHE3_B/I?
Vishay does not publish a specific RθJA value for the TPSMA36AHE3_B/I in the provided datasheet. Thermal performance is defined via derating curves (Figure 2) and maximum power dissipation (PD = 1.0 W at TA = 25 °C). Actual RθJA depends heavily on PCB layout - the datasheet specifies that ratings assume mounting on 0.2" × 0.2" copper pads per terminal. For thermal modeling, users should apply the published derating curve rather than assuming a fixed RθJA.
TPSMA36AHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AC, SMA
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 8A
- Power - Peak Pulse:
- 400W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AC (SMA)
TPSMA36AHE3_B/I FAQ
1.How can I place an order for TPSMA36AHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMA36AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMA36AHE3_B/I reliable?
The price and inventory of TPSMA36AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMA36AHE3_B/I is usually 5 days.
3.What payment methods are accepted for TPSMA36AHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMA36AHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMA36AHE3_B/I?
TPSMA36AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMA36AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMA36AHE3_B/I?
For technical support, including TPSMA36AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMA36AHE3_B/I requirements.
6.How does Aetrix verify that TPSMA36AHE3_B/I is sourced from the original manufacturer or authorized distributors?
All TPSMA36AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMA36AHE3_B/I meets industry standards.
7.What is the process for return or replacement of TPSMA36AHE3_B/I?
All TPSMA36AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMA36AHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMA36AHE3_B/I part is unused and in its original packaging.
Return procedure for TPSMA36AHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMA36AHE3_B/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

