Vishay General Semiconductor - Diodes Division TPSMB11AHE3/52T
- Part No.:
- TPSMB11AHE3/52T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB11AHE3/52T.pdf
- Description:
- TVS DIODE 9.4VWM 15.6VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:4,223
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMB11AHE3/52T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching transients and lightning-induced surges on power and signal lines. It features 11.0 V nominal breakdown voltage (VBR), 9.4 V maximum standoff voltage (VWM), 15.6 V clamping voltage at 38.5 A peak pulse current, 600 W peak pulse power (10/1000 µs), and operates up to +185 °C junction temperature - deployed in automotive sensor protection and industrial power supply input stages.
For engineers reviewing the TPSMB11AHE3/52T datasheet, TPSMB11AHE3/52T pinout, TPSMB11AHE3/52T application, or TPSMB11AHE3/52T equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, TJ = 185 °C rating, low clamping ratio (VC/VWM ≈ 1.66), and MSL Level 1 reflow compatibility - all critical for high-reliability automotive and industrial surge protection designs.
Technical Context
The TPSMB11AHE3/52T uses passivated anisotropic rectifier technology optimized for stable breakdown behavior under thermal stress. Its 10/1000 µs waveform response delivers 38.5 A peak pulse current with 15.6 V clamping voltage, while maintaining <2 µA reverse leakage at VWM and 5 µA at 150 °C.
Designed for unidirectional operation only, it integrates a cathode-band-marked SMB package with matte tin-plated leads compliant to J-STD-002 and JESD 22-B102, and meets JESD 201 Class 2 whisker resistance - enabling robust solder joint integrity in automated SMT assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 10.5 / 11.0 / 11.6 V - ensures reliable conduction onset above 9.4 V operating line, minimizing false triggering during normal transients |
| VWM | 9.4 V - defines maximum continuous reverse voltage before leakage exceeds 2 µA, matching 12 V rail systems with margin |
| VC @ IPPM | 15.6 V - clamps 38.5 A surge to safe level for downstream ICs rated ≤16 V absolute max |
| PPPM | 600 W - sustains single 10/1000 µs surge events common in automotive load-dump and inductive switch-off scenarios |
| TJ max | +185 °C - supports under-hood automotive placement and high-ambient industrial environments without derating |
| Polarity | Unidirectional - protects against positive-going transients only; requires external design consideration for bidirectional threats |
| MSL Level | Level 1 (260 °C peak) - allows standard lead-free reflow without baking or special handling |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode indicated by molded band. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H), with 5.59 mm mounting pad pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or low-impedance return path; forms clamping loop with cathode during surge |
| Cathode | High-side surge input terminal | Connected to protected line (e.g., 12 V supply or sensor output); conducts when VAK > VBR |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability per stress test requirements - enables use in ASIL-B compatible subsystems without additional qualification |
| Junction passivation | Stabilizes VBR drift across temperature and lifetime - maintains ±5 % tolerance over -65 °C to +185 °C range |
| Low incremental surge resistance | Enables tight clamping (VC/VBR ≈ 1.42) - reduces energy dissipation in protected circuitry during fast transients |
| 10/1000 µs waveform capability | Matches ISO 7637-2 Pulse 1 & 2 and IEC 61000-4-5 surge test profiles - directly applicable to automotive EMC compliance testing |
| Matte tin plating | Ensures solderability per J-STD-002 and whisker resistance per JESD 201 Class 2 - eliminates field failures from intermetallic growth in high-temp storage |
Applications
| Automotive Sensor Protection | Industrial Power Input Stage |
|---|---|
|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load-dump and ESD events in engine control units. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between signal line and chassis ground, responding within <1 ns to limit voltage excursion. Use Value: Clamps transients to ≤15.6 V while sustaining 185 °C junction temperature - preserving signal integrity and preventing latch-up in 5 V/3.3 V interface ICs. |
Use Scenario: Safeguarding 12 V/24 V DC input rails of PLC I/O modules and motor drive controllers against inductive kickback and grid surges. IC Role / Device Role / Timing Role: Primary surge suppression device mounted at board edge, shunting >38 A pulses away from upstream regulators and fuses. Use Value: Delivers 600 W peak pulse power with <2 µA leakage at 9.4 V - enabling low-quiescent-current standby operation without compromising surge margin. |
| Consumer Power Adapter Output | Telecom Line Interface |
|
Use Scenario: Secondary-side overvoltage protection in USB-C PD adapters and AC/DC wall adapters supplying sensitive digital loads. IC Role / Device Role / Timing Role: Fast-response clamp on +5 V/+9 V/+15 V output rails, activated before regulator overvoltage shutdown threshold. Use Value: Achieves 15.6 V clamping at 38.5 A with 0.067 %/°C VBR tempco - ensuring consistent trip point across ambient temperatures from -40 °C to +85 °C. |
Use Scenario: Surge protection on Ethernet PHY power pins (e.g., MDI power delivery) and auxiliary bias lines in VoIP gateways and base stations. IC Role / Device Role / Timing Role: Standoff-rated TVS on 3.3 V/5 V auxiliary supplies, absorbing repetitive EFT bursts per IEC 61000-4-4. Use Value: Maintains <5 µA leakage at 150 °C - prevents thermal runaway in sealed telecom enclosures with limited airflow and high ambient temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ11A | Same VBR (10.5–11.6 V), but lower PPPM = 400 W; SMA package (smaller footprint, lower thermal mass) | Limited to lower-energy transients; not AEC-Q101 qualified; unsuitable for under-hood automotive | Select SMAJ11A only for cost-sensitive consumer applications where 400 W surge margin suffices and automotive qualification is unnecessary. |
| SMCJ11A | Higher PPPM = 1500 W; same VBR, VC, and SMB-compatible SMC (DO-214AB) package; AEC-Q101 available | Supports higher-energy surges (e.g., ISO 7637-2 Pulse 5a); larger package increases PCB area and thermal inertia | Choose SMCJ11A when system-level testing requires >600 W immunity or when long-term reliability under repeated surges is prioritized over size. |
Compared with SMAJ11A and SMCJ11A, the TPSMB11AHE3/52T delivers optimal balance of AEC-Q101 qualification, 600 W surge capacity, SMB footprint, and +185 °C operation - making it the preferred choice for space-constrained, high-temperature automotive and industrial front-end protection where full SMC-level ruggedness is unnecessary.
Availability
TPSMB11AHE3/52T is available at Aetrix Electronics and suitable for automotive sensor protection, industrial power input stages, and telecom line interface applications requiring stable component supply, AEC-Q101 traceability, and extended temperature operation.
Supply support for TPSMB11AHE3/52T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.
The TPSMB series is engineered specifically for surface-mount transient suppression in harsh environments - emphasizing thermal stability, AEC-Q101 compliance, and repeatable clamping performance across wide temperature ranges.
FAQ
What is the exact breakdown voltage range for TPSMB11AHE3/52T?
The TPSMB11AHE3/52T has a guaranteed breakdown voltage range of 10.5 V (minimum) to 11.6 V (maximum) at 1 mA test current, with 11.0 V nominal value. This specification is measured per ANSI/IEEE C62.35 and validated across production lots. The TPSMB11AHE3/52T maintains this tolerance over its full operating temperature range, supporting precise overvoltage protection design in 12 V systems.
Is TPSMB11AHE3/52T AEC-Q101 qualified?
Yes, the TPSMB11AHE3/52T is AEC-Q101 qualified, as confirmed by Vishay's official documentation and ordering code suffix "HE3", which denotes RoHS-compliant and AEC-Q101 qualified variants. This qualification covers stress tests including HTGB, HTRB, TCT, and mechanical shock - validating suitability for automotive powertrain and body electronics applications.
What does the "HE3/52T" suffix indicate in TPSMB11AHE3/52T?
The "HE3" suffix identifies the TPSMB11AHE3/52T as RoHS-compliant and AEC-Q101 qualified, while "52T" specifies the packaging configuration: 7" diameter plastic tape and reel, 750 units per reel. This matches Vishay's preferred package code "H" and delivery mode defined in their ordering information table for the TPSMB family.
Can TPSMB11AHE3/52T be used in bidirectional protection circuits?
No, the TPSMB11AHE3/52T is unidirectional only, as explicitly stated in Vishay's datasheet features and electrical characteristics. It conducts only when cathode-to-anode voltage exceeds VBR. For bidirectional protection, two TPSMB11AHE3/52T devices must be connected in series opposition, or a dedicated bidirectional TVS (e.g., TPSMB11CA) should be selected instead.
What is the maximum clamping voltage of TPSMB11AHE3/52T under surge conditions?
The TPSMB11AHE3/52T clamps to a maximum of 15.6 V at its rated peak pulse current of 38.5 A (10/1000 µs waveform). This value is measured per standard test conditions and represents the upper limit of voltage seen by downstream circuitry during a full-power surge event - critical for ensuring compatibility with 16 V absolute maximum rated ICs.
TPSMB11AHE3/52T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9.4V
- Voltage - Breakdown (Min):
- 10.5V
- Voltage - Clamping (Max) @ Ipp:
- 15.6V
- Current - Peak Pulse (10/1000µs):
- 38.5A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB11AHE3/52T FAQ
1.How can I place an order for TPSMB11AHE3/52T through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB11AHE3/52T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB11AHE3/52T reliable?
The price and inventory of TPSMB11AHE3/52T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB11AHE3/52T is usually 5 days.
3.What payment methods are accepted for TPSMB11AHE3/52T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB11AHE3/52T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB11AHE3/52T?
TPSMB11AHE3/52T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB11AHE3/52T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB11AHE3/52T?
For technical support, including TPSMB11AHE3/52T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB11AHE3/52T requirements.
6.How does Aetrix verify that TPSMB11AHE3/52T is sourced from the original manufacturer or authorized distributors?
All TPSMB11AHE3/52T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB11AHE3/52T meets industry standards.
7.What is the process for return or replacement of TPSMB11AHE3/52T?
All TPSMB11AHE3/52T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB11AHE3/52T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB11AHE3/52T part is unused and in its original packaging.
Return procedure for TPSMB11AHE3/52T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB11AHE3/52T Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

